公开(公告)号：KR1020130063155A

公开(公告)日：2013-06-14

申请号：KR1020110129522

申请日：2011-12-06

Applicant: 제일모직주식회사

Inventor： 김상진 ,  위경태 ,  최재원 ,  김상균 ,  김철수

IPC: C09J201/00 ,  C09J11/00 ,  C09J7/02 ,  H01L21/02

CPC classification number: C08L63/00 ,  C08G59/5033 ,  C08G59/56 ,  C08G59/621 ,  C09J163/00 ,  H01L21/56 ,  H01L21/6836 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L24/92 ,  H01L25/0657 ,  H01L2224/2929 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/83101 ,  H01L2224/92247 ,  H01L2225/06506 ,  H01L2924/00014 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12043 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207 ,  C09J201/00 ,  C09J7/22 ,  C09J7/30 ,  C09J7/35 ,  C09J11/00 ,  C09J2203/326 ,  H01L21/02002

Abstract: PURPOSE: An adhesive composition is provided to reduce process time by not generating reliability loss due to a quick curing rate even when reducing or excluding a semi-curing process after adhesion. CONSTITUTION: An adhesive composition comprises 60-80 wt% of a thermoplastic resin, based on total solid weight of the adhesive composition, and comprises a phenol hardener and an amine hardener. The storage elasticity after 20 minutes at 150 °C is 2 MPa or more. The reaction curing rate of the adhesive composition is 50% or more. The void after 120 seconds molding at 175 °C is 10% or less. The weight ratio of the phenol hardener and amine curing agent is 3:1-1:11. The adhesive composition additionally includes the adhesive composition.

Abstract translation: 目的：提供粘合剂组合物，以便即使在粘合后减少或排除半固化过程，也不会由于快速固化速率而产生可靠性损失，从而缩短加工时间。 构成：基于粘合剂组合物的总固体重量，粘合剂组合物包含60-80重量％的热塑性树脂，并且包含酚硬化剂和胺硬化剂。 150℃下20分钟后的储存弹性为2MPa以上。 粘合剂组合物的反应固化速度为50％以上。 在175℃下成型120秒后的空隙为10％以下。 酚类固化剂和胺类固化剂的重量比为3：1-1：11。 粘合剂组合物另外包括粘合剂组合物。

公开(公告)号：KR101266291B1

公开(公告)日：2013-05-22

申请号：KR1020080137227

申请日：2008-12-30

Applicant: 제일모직주식회사

Inventor： 조현모 ,  김상균 ,  우창수 ,  김미영 ,  고상란 ,  윤희찬 ,  이우진 ,  김종섭

IPC: G03F7/075 ,  G03F7/004

CPC classification number: G03F7/0752 ,  C08G77/12 ,  C08G77/14 ,  C08G77/16 ,  C08G77/18 ,  C08G77/20 ,  C08G77/24 ,  C08G77/26 ,  C08G77/50 ,  C08G77/52 ,  C08G77/70 ,  C08K5/0008 ,  C08L83/04 ,  C08L83/14 ,  C09D183/04 ,  C09D183/14 ,  G03F7/0757 ,  G03F7/09 ,  G03F7/091 ,  G03F7/094 ,  G03F7/11 ,  G03F7/30 ,  G03F7/36

Abstract: 이로써, 본발명은굴절률과흡광도를용이하게조절하여, 반사방지특성이우수한레지스트하층막을제공할수 있는레지스트하층막용조성물, 이를이용한반도체집적회로디바이스의제조방법을제공한다.

公开(公告)号：KR1020130017729A

公开(公告)日：2013-02-20

申请号：KR1020110080331

申请日：2011-08-11

Applicant: 제일모직주식회사

Inventor： 한권우 ,  김미영 ,  이우진 ,  이한송 ,  홍승희 ,  김상균 ,  이진욱

IPC: G03F7/075 ,  G03F7/11 ,  G03F7/004 ,  H01L21/027

CPC classification number: C08L83/06 ,  G03F7/0752 ,  G03F7/091 ,  G03F7/094 ,  G03F7/0757 ,  G03F7/004 ,  G03F7/0043 ,  G03F7/0045 ,  G03F7/075 ,  G03F7/11 ,  H01L21/027 ,  H01L21/0271

Abstract: PURPOSE: A resist underlayer composition is provided to have excellent coatability and storage stability while having an etching resistance to O2 plasma and to form a dense Q-structured network in the resist underlayer by only a low temperature baking process without a high temperature baking process. CONSTITUTION: A resist underlayer composition comprises an organic silane-based fused polymer manufactured by polycondensation generated from compounds which are indicated in chemical formula 1-3, and a solvent. In chemical formula 1, R1 is a substituted or unsubstituted C1-C6 alkyl group and X is a substituted or unsubstituted C6-C30 aryl group. In chemical formula 2, R2 is a substituted or unsubstituted C1-C6 alkyl group and R3 is a substituted or unsubstituted C1-C12 alkyl group. In chemical formula 3, each of R4 and R5 is independently a substituted or unsubstituted C1-C6 alkyl group.

Abstract translation: 目的：提供抗蚀剂下层组合物以具有优异的涂布性和储存稳定性，同时具有对O 2等离子体的耐蚀刻性，并且仅通过低温烘烤工艺在抗蚀剂底层中形成密集的Q结构网络，而不进行高温烘烤。 构成：抗蚀剂底层组合物包含通过由化学式1-3所示的化合物产生的缩聚物和溶剂制造的有机硅烷基熔融聚合物。 在化学式1中，R 1是取代或未取代的C 1 -C 6烷基，X是取代或未取代的C 6 -C 30芳基。 在化学式2中，R2是取代或未取代的C1-C6烷基，R3是取代或未取代的C1-C12烷基。 在化学式3中，R 4和R 5各自独立地为取代或未取代的C 1 -C 6烷基。

公开(公告)号：KR1020130009509A

公开(公告)日：2013-01-23

申请号：KR1020110070672

申请日：2011-07-15

Applicant: 제일모직주식회사

Inventor： 박은수 ,  김봉환 ,  임상학 ,  곽택수 ,  배진희 ,  윤희찬 ,  김상균 ,  이진욱

IPC: H01L21/8242 ,  H01L27/108 ,  H01L21/318

CPC classification number: C08G77/62 ,  C01B21/087 ,  H01L28/90

Abstract: PURPOSE: A filter for filling a gap, a manufacturing method thereof, and a method for manufacturing a semiconductor capacitor are provided to improve the uniformity of a thickness and the dispersion of solutions by including surfactant of 0.001 to 10 weight%. CONSTITUTION: A mold oxide layer(3) is formed on a semiconductor substrate(1). A gap exposing a contact plug of a semiconductor substrate by the photolithography of the mold oxide layer. A conductive layer(5) is formed on the semiconductor substrate and the mold oxide layer. A filling layer(7) is formed on the conductive layer. The conductive layer located on the upper side of the mold oxide layer is partially removed.

Abstract translation: 目的：提供用于填充间隙的过滤器，其制造方法和制造半导体电容器的方法，通过包括0.001至10重量％的表面活性剂来提高厚度的均匀性和溶液的分散性。 构成：在半导体衬底（1）上形成模具氧化物层（3）。 通过模具氧化物层的光刻法暴露半导体衬底的接触插塞的间隙。 在半导体衬底和模具氧化物层上形成导电层（5）。 在导电层上形成填充层（7）。 部分去除位于模具氧化物层上侧的导电层。

公开(公告)号：KR1020120071311A

公开(公告)日：2012-07-02

申请号：KR1020110107657

申请日：2011-10-20

Applicant: 제일모직주식회사

Inventor： 윤희찬 ,  곽택수 ,  김봉환 ,  배진희 ,  오정강 ,  임상학 ,  한동일 ,  김상균 ,  이진욱

IPC: C08L83/04 ,  C09D183/04 ,  C08G77/04

Abstract: PURPOSE: A composition for forming a silica layer is provided to remarkably reduce defects and form a silica layer with improved insulation and gap-fill properties. CONSTITUTION: A composition for forming a silica layer comprises one selected from hydrogenated polysilazane, hydrogenated polysiloxazane, and combinations thereof. The concentration of the hydrogenated polysilazane and hydrogenated polysiloxazane more than an average molecular weight of polystyrene of 50,000 is 0.1% or less. The number of particulates of the composition in the solution is 0-100 /cc. The weight average molecular weight of the hydrogenated polysilazane and hydrogenated polysiloxazane is 1,000-10,000. The total contents of the hydrogenated polysilazane and the hydrogenated polysiloxazane is 0.1-50 weight%.

Abstract translation: 目的：提供用于形成二氧化硅层的组合物以显着减少缺陷并形成具有改善的绝缘和间隙填充性能的二氧化硅层。 构成：用于形成二氧化硅层的组合物包括选自氢化聚硅氮烷，氢化聚硅氧氮烷及其组合的组合物。 氢化聚硅氮烷和氢化聚硅氧氮烷的聚苯乙烯的平均分子量为50,000以下的浓度为0.1％以下。 溶液中组合物的颗粒数为0-100 / cc。 氢化聚硅氮烷和氢化聚硅氧氮烷的重均分子量为1,000〜10000。 氢化聚硅氮烷和氢化聚硅氧氮烷的总含量为0.1-50重量％。

公开(公告)号：KR1020110079202A

公开(公告)日：2011-07-07

申请号：KR1020090136189

申请日：2009-12-31

Applicant: 제일모직주식회사

Inventor： 김미영 ,  이우진 ,  한권우 ,  이한송 ,  김상균 ,  김종섭

IPC: G03F7/11 ,  G03F7/075 ,  H01L21/027

CPC classification number: H01L21/0332 ,  C08G77/80 ,  C09D183/04 ,  G03F7/0752 ,  G03F7/091 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02282 ,  G03F7/11

Abstract: PURPOSE: A resist sublayer composition and a method for manufacturing a semiconductor integrated circuit device using the same are provided to easily control the refractive rate and the absorbance of the composition in a wavelength range lower than or equal to 250nm. CONSTITUTION: A resist sublayer composition includes a solvent and the organic silane-based polycondensate containing compounds. The compounds are represented by chemical formulas 1, 2, and 3. In the chemical formula 1, R1 is substituted or non-substituted C1 to C6 alkyl group. The X is substituted or non-substituted C6 to C30 aryl group. In the chemical formula 2, the R2 is substituted or non-substituted C1 to C6 alkyl group. The R3 is substituted or non-substituted C1 to C12 alkyl group. In the chemical formula 3, the R4 and the R5 are substituted or non-substituted C1 to C12 alkyl group.

Abstract translation: 目的：提供抗蚀剂子层组合物和使用其的半导体集成电路器件的制造方法，以容易地控制组合物在小于或等于250nm的波长范围内的折射率和吸光度。 构成：抗蚀剂亚层组合物包括溶剂和含有机硅烷类缩聚物的化合物。 化合物由化学式1,2和3表示。在化学式1中，R 1是取代或未取代的C 1 -C 6烷基。 X是取代或未取代的C 6至C 30芳基。 在化学式2中，R2是取代或未取代的C1至C6烷基。 R3是取代或未取代的C1至C12烷基。 在化学式3中，R 4和R 5是取代或未取代的C 1至C 12烷基。

公开(公告)号：KR1020100078853A

公开(公告)日：2010-07-08

申请号：KR1020080137227

申请日：2008-12-30

Applicant: 제일모직주식회사

Inventor： 조현모 ,  김상균 ,  우창수 ,  김미영 ,  고상란 ,  윤희찬 ,  이우진 ,  김종섭

IPC: G03F7/075 ,  G03F7/004

CPC classification number: G03F7/0752 ,  C08G77/12 ,  C08G77/14 ,  C08G77/16 ,  C08G77/18 ,  C08G77/20 ,  C08G77/24 ,  C08G77/26 ,  C08G77/50 ,  C08G77/52 ,  C08G77/70 ,  C08K5/0008 ,  C08L83/04 ,  C08L83/14 ,  C09D183/04 ,  C09D183/14 ,  G03F7/0757 ,  G03F7/09 ,  G03F7/091 ,  G03F7/094 ,  G03F7/11 ,  G03F7/30 ,  G03F7/36 ,  G03F7/0043 ,  G03F7/0045 ,  G03F7/0754

Abstract: PURPOSE: A resist under-layer composition, and a manufacturing method of a semiconductor integrated circuit device using thereof are provided to offer a resist under-layer with the excellent anti-reflection property by easily control the absorbance and the refractive index of the composition. CONSTITUTION: A resist under-layer composition contains the following: more than one compound selected from the group containing compounds marked with [R1]3Si-[Ph1]l-Si[R2]3 and [R1]3Si-[Ph1]m-Ph2; an organic silane polycondensate selected from the group containing compounds marked with [R1]3Si-(CH2)n-R3, [R1]3Si-R4, and [R1]3Si-X-Si[R1]3; and a solvent. In the chemical formulas, Ph1 and Ph2 area substituted or non-substituted phenylene group, respectively. R1 and R2 are selected from the group consisting of a halogen group, an alkoxy group, a carboxy group, and others, respectively. R3 is a substituted or non-substituted aryl group with the carbon number of 6~12.

Abstract translation: 目的：抗蚀剂层下组合物及其使用的半导体集成电路器件的制造方法，通过容易地控制组合物的吸光度和折射率，提供具有优异的抗反射性的抗蚀剂底层。 抗蚀剂底层组合物包含以下：多于一种选自含有[R 1] 3 Si- [Ph 1] Si [R 2] 3和[R 1] 3 Si- [Ph 1] m - PH2; 选自由[R1] 3Si-（CH2）n-R3，[R1] 3Si-R4和[R1] 3Si-X-Si [R1] 3标记的含有化合物的组的有机硅烷缩聚物; 和溶剂。 在化学式中，Ph1和Ph2分别取代或未取代的亚苯基。 R1和R2分别选自卤素基，烷氧基，羧基等。 R3是碳数为6〜12的取代或未取代的芳基。

公开(公告)号：KR100888613B1

公开(公告)日：2009-03-12

申请号：KR1020070080920

申请日：2007-08-10

Applicant: 제일모직주식회사

Inventor： 임상학 ,  김상균 ,  김미영 ,  고상란 ,  윤희찬 ,  어동선 ,  김종섭 ,  김도현

IPC: G03F7/11 ,  G03F7/075

Abstract: 본 발명은 하기 화학식 1로 표시되는 1종 이상의 화합물로부터 생성된 가수분해물의 축중합체인 실란축합물; 암모늄염; 및 용매를 포함하는 것을 특징으로 하는 포토레지스트 하층막용 하드마스크 조성물 및 이를 이용한 반도체 집적회로 디바이스의 제조방법에 관한 것이다.
[화학식 1]
R
1x -Si-[OR
2 ]
4-x
(R
1 : 수소, 탄소원자수 1 내지 30의 치환 또는 비치환된 지방족 탄화수소기, 탄소원자수 1 내지 30의 치환 또는 비치환된 방향족 탄화수소기, 탄소원자수 1 내지 30의 치환 또는 비치환된 지환족 탄화수소기, 탄소원자수 1 내지 30의 치환 또는 비치환된 실릴기, 탄소원자수 1 내지 30의 치환 또는 비치환된 알릴기, 탄소원자수 1 내지 30의 치환 또는 비치환된 아실기, 비닐기, 아민기, 아세테이트 또는 알칼리금속,
x: 0~2,
R
2 : 수소, 탄소원자수 1 내지 4의 치환 또는 비치환된 지방족 탄화수소기, 아세테이트, 나트륨 및 칼륨 중 어느 하나.)
본 발명의 조성물은 우수한 보관안정성, 레지스트 현상액에 대한 내용제성 및 내에칭성을 갖는다.
리소그래피(lithography), 하드마스크(hardmask), 반사방지막(anti-reflective coating), 경화제(curing agent)

公开(公告)号：KR100796047B1

公开(公告)日：2008-01-21

申请号：KR1020060115411

申请日：2006-11-21

Applicant: 제일모직주식회사

Inventor： 김미영 ,  김상균 ,  임상학 ,  고상란 ,  윤희찬 ,  김도현 ,  어동선 ,  김종섭

IPC: G03F7/004

CPC classification number: C08G77/50 ,  C08L83/14 ,  G03F7/11 ,  G03F7/2022 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/0271 ,  H01L21/31144 ,  H01L21/3122 ,  G03F7/091 ,  G03F7/0757

Abstract: A hard mask composition for a lower layer of resist is provided to realize excellent film properties and shelf stability, to allow transfer of a high-quality pattern to a substrate, and to form a hard mask having excellent etching resistance against O2 plasma gas used in the subsequent etching step. A hard mask composition for a lower layer of resist comprises: an organosilane-based polymer produced from the compounds represented by the formula of [R1O]3Si-X, [R2O]3Si-R3 and [R4O]3Si-Y-Si[OR5]3 in the presence of an acid catalyst; and a solvent. In the formulae, X is a C6-C30 functional group containing a substituted or non-substituted aromatic ring; each of R1, R2, R4 and R5 independently represents a C1-C6 alkyl; R3 is a C1-C12 alkyl; and Y is a linking group selected from an aromatic ring, C1-C20 linear or branched, substituted or non-substituted alkylene, C1-C20 alkylene group whose backbone contains an aromatic ring, heterocyclic ring, urea or isocyanurate group, and C2-C20 hydrocarbon group containing a multiple bond.

Abstract translation: 提供了用于下层抗蚀剂的硬掩模组合物以实现优异的膜性质和储存稳定性，以允许将高质量图案转印到基底上，并形成具有优异耐蚀刻性的硬质掩模 随后的蚀刻步骤。 用于下层抗蚀剂的硬掩模组合物包括：由式[R1O] 3Si-X，[R2O] 3Si-R3和[R4O] 3Si-Y-Si [OR5]表示的化合物制备的基于有机硅烷的聚合物 ] 3在酸催化剂存在下反应; 和溶剂。 在该式中，X是含有取代或未取代的芳环的C6-C30官能团; R 1，R 2，R 4和R 5各自独立地表示C 1 -C 6烷基; R3是C1-C12烷基; Y是选自芳香环，C1-C20直链或支链，取代或未取代的亚烷基的连接基团，其主链含有芳香环，杂环，脲或异氰脲酸酯基的C1-C20亚烷基和C2-C20 含有多重键的烃基。

公开(公告)号：KR101702510B1

公开(公告)日：2017-02-03

申请号：KR1020130107398

申请日：2013-09-06

Applicant: 제일모직주식회사

Inventor： 김상수 ,  강진희 ,  김대윤 ,  김상권 ,  김상균 ,  김용태 ,  박은비 ,  송재환 ,  이범진 ,  홍충범 ,  황인철

IPC: G03F7/039 ,  G03F7/028 ,  G03F7/40

Abstract: (A) 알칼리가용성수지, 가교제, 광산발생제, 및용매를포함하는포지티브형감광성수지조성물을기판상에도포하는단계; (B) 상기도포된포지티브형감광성수지조성물을건조한후, 150℃내지 200℃에서사전가열하는단계(Pre baking); (C) 상기사전가열후 노광하는단계; (D) 상기노광후 현상하는단계; 및 (E) 상기현상후 경화하는단계를포함하는감광성수지막의제조방법, 및상기방법에따라제조된감광성수지막을제공한다.

Abstract translation: 本发明提供一种感光性树脂薄膜和通过该感光性树脂薄膜制造的感光性树脂薄膜的制造方法，其特征在于，包括以下工序：（A）涂布含有碱溶性树脂的正型感光性树脂组合物， 药剂，光致酸产生剂和溶剂; （B）将涂布的正型感光性树脂组合物干燥并在150〜200℃下进行预烘烤; （C）加热并将其暴露于光; （D）发展; 和（E）硬化相同。