公开(公告)号：DE10253161B4

公开(公告)日：2010-05-06

申请号：DE10253161

申请日：2002-11-14

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： PLOESL ANDREAS ,  EISERT DOMINIK ,  VOELKL JOHANNES

IPC: H01L33/12 ,  C30B25/02 ,  H01L21/208 ,  H01L33/00 ,  H01L33/44

公开(公告)号：DE102008026839A1

公开(公告)日：2009-07-02

申请号：DE102008026839

申请日：2008-06-05

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： GROLIER VINCENT ,  PLOESL ANDREAS

IPC: H01L23/488 ,  H01L33/00

Abstract: On an epitaxy substrate (1), a layer structure (5, 6, 7) provided for light-emitting diodes or other optoelectronic components using thin-film technology is produced and provided with a first connecting layer (2), which comprises one or a plurality of solder materials. A second connecting layer (3) is applied over the whole area on a carrier (10) and permanently connected to the first connecting layer (2) by means of a soldering process.

公开(公告)号：DE102006023685A1

公开(公告)日：2007-04-05

申请号：DE102006023685

申请日：2006-05-19

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： PLOESL ANDREAS ,  WIRTH RALPH

IPC: H01L33/00 ,  H01L33/10 ,  H01L33/42 ,  H01S5/02

Abstract: The chip has a semiconductor layered construction (1) that is provided with an active region (4) for producing electromagnetic radiation. A transparent conducting oxide (TCO) support substrate (10) is provided on the semiconductor layered construction. The support substrate comprising a material from a group of transparent conducting oxides mechanically supports the semiconductor layered construction.

公开(公告)号：DE102004040277A1

公开(公告)日：2006-02-09

申请号：DE102004040277

申请日：2004-08-19

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： KRAEUTER GERTRUD ,  WIRTH RALPH ,  PLOESL ANDREAS ,  ZULL HERIBERT

IPC: H01L33/46

Abstract: The invention describes a method for producing a reflective layer system and a reflective layer system for application to a III/V compound semiconductor material, wherein a first layer, containing phosphosilicate glass, is applied directly to the semiconductor substrate Disposed thereon is a second layer, containing silicon nitride. A metallic layer is then applied thereto.

公开(公告)号：DE10307280B4

公开(公告)日：2005-09-01

申请号：DE10307280

申请日：2003-02-20

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： ILLEK STEFAN ,  PLOESL ANDREAS

IPC: H01L33/24 ,  H01L33/30 ,  H01L33/40 ,  H01L33/00

公开(公告)号：DE10350707A1

公开(公告)日：2004-11-11

申请号：DE10350707

申请日：2003-10-30

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： STEIN WILHELM ,  FEHRER MICHAEL ,  BAUR JOHANNES ,  WINTER MATTHIAS ,  PLOESL ANDREAS ,  KAISER STEPHAN ,  HAHN BERTHOLD ,  EBERHARD FRANZ

IPC: H01L31/0224 ,  H01L33/32 ,  H01L33/40 ,  H01S5/02 ,  H01S5/323 ,  H01L33/00

Abstract: The electrical contact of optoelectronic semiconductor chip (1) has a mirror layer (2), a protective layer (3), a barrier layer (4), an adhesion medium layer (5) and a solder layer (8). The mirror layer contains metal or metal alloy. The protective layer reduces corrosion of mirror layer. The mirror layer contains silver, aluminum or platinum. The protective layer contains titanium or platinum. The barrier layer contains titanium-tungsten nitride (TiW (N)). The adhesion medium layer contains titanium. An independent claim is included for manufacture electrical contact.

公开(公告)号：DE10261364A1

公开(公告)日：2004-08-19

申请号：DE10261364

申请日：2002-12-30

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： STEIN WILHELM ,  JANES STEFAN ,  HEINDL ALEXANDER ,  PLOESL ANDREAS ,  WEGLEITER WALTER

IPC: H01L21/283 ,  H01L21/285 ,  H01L33/00

Abstract: Deposition of a temperable multilayer contact coating, especially a tempered multilayer contact metallizing onto a semiconductor material by the steps: application of a masking layer to the semiconductor, formation of a window in the masking layer, application of a contact metal layer to the semiconductor, application of an external layer and/or a barrier layer on or above the contact metal layer (4), and removal of the contact metal on the masking layer.

公开(公告)号：DE10244200A1

公开(公告)日：2004-04-08

申请号：DE10244200

申请日：2002-09-23

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： BAUR JOHANNES ,  FEHRER MICHAEL ,  HAHN BERTHOLD ,  STEIN WILHELM ,  PLOESL ANDREAS ,  EISERT DOMINIK

IPC: H01L33/32 ,  H01L33/40 ,  H01L33/00

Abstract: A radiation-emitting semiconductor component with a layer structure ( 12 ) which includes a photon-emitting active layer ( 16 ), an n-doped cladding layer ( 14 ) and a p-doped cladding layer ( 18 ), a contact connected to the n-doped cladding layer ( 14 ) and a mirror layer ( 20 ) connected to the p-doped cladding layer ( 18 ). The mirror layer ( 20 ) is formed by an alloy of silver comprising one or more metals selected from the group consisting of Ru, Rh, Pd, Au, Os, Ir, Pt, Cu, Ti, Ta and Cr.

公开(公告)号：DE10059532A1

公开(公告)日：2002-06-06

申请号：DE10059532

申请日：2000-11-30

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： PLOESL ANDREAS ,  STREUBEL KLAUS ,  WEGLEITER WALTER ,  WIRTH RALPH ,  ILLEK STEFAN

IPC: H01L33/00 ,  H01L33/10 ,  H01L33/20 ,  H01S5/022

Abstract: A recess (8) made in an active layer (2) from a fastening side (11) breaks up an active zone (3). A number of recesses form elevations (4) on a connection layer (5) for the active layer. The connection layer has a contact point (7) formed by a metallized layer. Rear side elevations formed by the recesses are covered with a reflective layer made up of a dielectric insulating layer (9) and a metallized layer (10) applied to it.

公开(公告)号：DE10038671A1

公开(公告)日：2002-02-28

申请号：DE10038671

申请日：2000-08-08

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： PLOESL ANDREAS ,  STREUBEL KLAUS ,  WEGLEITER WALTER ,  WIRTH RALPH ,  ILLEK STEFAN

IPC: H01L33/00 ,  H01L33/08 ,  H01L33/10 ,  H01L33/20 ,  H01L33/30

Abstract: An active layer (2) having a photo-emitting zone (3) has a carrier layer (1) formed on its bonding side. Recesses (8) formed in the active layer, have cross-sectional area which decreases with increasing depth of the recesses into the active layer, from the bonding side.