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公开(公告)号：DE60124336D1
公开(公告)日：2006-12-21
申请号：DE60124336
申请日：2001-04-26
Applicant: ASML NETHERLANDS BV
Inventor： VAN DER SCHAAR MAURITS , SETIJA IRWAN DANI , MOS EVERHARDUS CORNELIS
Abstract: Alignment to buried marks is carried out by using electromagnetic radiation to induce waves in the layers covering the buried layer. The acoustic or thermal waves cause reflectivity changes and displacements in the surface whose position and/or time dependence reveals the true position of the buried alignment mark. The buried alignment mark may be revealed by mapping the thickness of covering layers in its vicinity, e.g. by measuring the time dependence of the decay of a standing wave induced in the covering layers or by measuring the delay time of echoes of a travelling wave created at interfaces between different ones of the covering layers. Alternatively, a travelling wave can be created over the whole area of the mark so that echoes off the top and bottom of the buried mark carry positive and negative images of the mark; these cause reflectivity differences and displacements when they reach the surface which can be aligned to.
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公开(公告)号：SG123587A1
公开(公告)日：2006-07-26
申请号：SG200307483
申请日：2003-12-15
Applicant: ASML NETHERLANDS BV
Abstract: During device manufacturing, a beam of radiation is projected onto a substrate via a mask. The substrate is aligned with the mask using an alignment structure on the substrate, with properties of the light reflected from (or transmitted by) the alignment structure being used to determine the relative position of the substrate. Earlier processing of the substrate may cause errors in the position determined from the reflected light. In one embodiment of the invention, measurement of properties of the reflected light are used to determine a correction for errors caused by processing of the substrate. Parameters of a physical model of the alignment structure may be estimated from the reflected light and used to determine the correction. Amplitudes of a plurality of different diffraction peaks may be measured to determine the correction.
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公开(公告)号：DE112018000173B4
公开(公告)日：2022-12-15
申请号：DE112018000173
申请日：2018-05-23
Applicant: ASML NETHERLANDS BV
Inventor： HARUTYUNYAN DAVIT , JIA FEI , STAALS FRANK , WANG FUMING , LOOIJESTIJN HUGO THOMAS , RIJNIERSE CORNELIS JOHANNES , PISARENCO MAXIM , WERKMAN ROY , THEEUWES THOMAS , HEMERT TOM VAN , BASTANI VAHID , WILDENBERG JOCHEM SEBASTIAAN , MOS EVERHARDUS CORNELIS , WALLERBOS ERIK JOHANNES MARIA
IPC: G03F7/20 , G05B13/04 , G05B19/418 , H01L21/66
Abstract: Ein Verfahren zum Bestimmen eines charakteristischen Beitrags einer Vorrichtung aus einer Vielzahl von Vorrichtungen zu einem Fingerabdruck eines Parameters, wobei der Parameter mit der Verarbeitung eines Substrats assoziiert ist, wobei das Verfahren Folgendes beinhaltet:Erhalten von Parameterdaten und Verwendungsdaten, wobei die Parameterdaten auf Messungen für mehrere Substrate, die von der Vielzahl von Vorrichtungen verarbeitet worden sind, basieren und die Verwendungsdaten angeben, welche der Vorrichtungen aus der Vielzahl von Vorrichtungen bei der Verarbeitung jedes Substrats verwendet wurden;Bestimmen des Beitrags unter Verwendung der Verwendungsdaten und Parameterdaten; undAnalysieren der Variation der Parameterdaten unter Verwendung der Verwendungsdaten, wobei das Bestimmen des Beitrags zu dem Parameter für eine Vorrichtung das Gruppieren der Daten unter Verwendung der analysierten Variation beinhaltet.
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44.发明专利
公开(公告)号：SG152147A1
公开(公告)日：2009-05-29
申请号：SG2008073900
申请日：2008-10-06
Applicant: ASML NETHERLANDS BV
Inventor： MOS EVERHARDUS CORNELIS , DEN BOEF ARIE JEFFREY , VAN DER SCHAAR MAURITS , KEIJ STEFAN CAROLUS JACOBUS ANTONIUS
Abstract: An alignment sensor includes a spatially coherent radiation source that supplies a radiation beam to an angle-resolved scatterometer. Alignment is performed by detecting beats in the scatter spectrum during scanning of the substrate relative to the scatterometer.
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Patent Agency Ranking
公开(公告)号：SG143131A1
公开(公告)日：2008-06-27
申请号：SG2007171036
申请日：2007-10-19
Applicant: ASML NETHERLANDS BV
Inventor： MOS EVERHARDUS CORNELIS , DEN BOEF ARIE JEFFREY , MAURITS VAN DER SCHAAR , HOOGENBOOM THOMAS LEO MARIA
Abstract: Inspection Method and Apparatus, Lithographic Apparatus,Lithographic Processing Cell and Device Manufacturing Method A fault detection and classification method is disclosed that uses raw back- focal-plane image data of radiation from a substrate surface, detected by a scatterometer detector, to determine a variation in the raw data and correlate the variation in the raw data with a possible fault in a lithographic apparatus or a process that patterned the substrate surface. The correlation is carried out by comparing the variation in the raw data with known metrology data. Once a fault has been determined, a user may be notified of the fault.
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公开(公告)号：SG136116A1
公开(公告)日：2007-10-29
申请号：SG2007025166
申请日：2007-04-04
Applicant: ASML NETHERLANDS BV
Inventor： WERKMAN ROY , MOS EVERHARDUS CORNELIS
Abstract: Correcting for misalignment of a substrate before it is exposed is performed using offset corrections and process corrections that are calculated based on alignment offset measurements of alignment marks and overlay measurements of overlay targets on substrates in previous batches.
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公开(公告)号：SG125923A1
公开(公告)日：2006-10-30
申请号：SG200305609
申请日：2003-09-19
Applicant: ASML NETHERLANDS BV
Inventor： HAREN VAN RICHARD JOHANNES FRA , HINNEN PAUL CHRISTIAAN , LALBAHADOERSING SANJAY , MOS EVERHARDUS CORNELIS , MEGENS HENRY , SCHAAR VAN DER MAURITS , HUIJBREGTSE JEROEN
IPC: G01B11/00 , G01B11/02 , G01B21/00 , G01D5/00 , G02B5/18 , G03F7/00 , G03F7/20 , G03F9/00 , G03F9/02 , H01L21/027 , H01L21/3205 , H01L21/68 , H01L23/52 , H01S3/00
Abstract: Marker structure on a substrate for optical alignment of said substrate, said marker structure comprising a plurality of first structural elements and a plurality of second structural elements, in use said marker structure allowing said optical alignment based upon providing at least one light beam directed on said marker structure, - detecting light received from said marker structure at a sensor, - determining alignment information from said detected light, said alignment information comprising information relating a position of said substrate to said sensor.
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公开(公告)号：DE112018000173T5
公开(公告)日：2019-08-22
申请号：DE112018000173
申请日：2018-05-23
Applicant: ASML NETHERLANDS BV
Inventor： HARUTYUNYAN DAVIT , JIA FEI , STAALS FRANK , WANG FUMING , LOOIJESTIJN HUGO THOMAS , RIJNIERSE CORNELIS JOHANNES , PISARENCO MAXIM , WERKMAN ROY , THEEUWES THOMAS , HEMERT TOM VAN , BASTANI VAHID , WILDENBERG JOCHEM SEBASTIAAN , MOS EVERHARDUS CORNELIS , WALLERBOS ERIK JOHANNES MARIA
IPC: G03F7/20 , G05B13/04 , G05B19/418 , H01L21/66
Abstract: Ein Verfahren, System und Programm zum Bestimmen des Beitrags eines Fingerabdrucks eines Parameters. Das Verfahren umfasst das Bestimmen eines Beitrags von einer Vorrichtung aus einer Vielzahl von Vorrichtungen zu einem Fingerabdruck eines Parameters. Das Verfahren beinhaltet Folgendes:Erhalten von Parameterdaten und Verwendungsdaten, wobei die Parameterdaten auf Messungen für mehrere Substrate, die von der Vielzahl von Vorrichtungen verarbeitet worden sind, basieren und die Verwendungsdaten angeben, welche der Vorrichtungen aus der Vielzahl der Vorrichtungen bei der Verarbeitung jedes Substrats verwendet wurden; undBestimmen des Beitrags unter Verwendung der Verwendungsdaten und Parameterdaten.
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公开(公告)号：SG170759A1
公开(公告)日：2011-05-30
申请号：SG2011020773
申请日：2007-09-14
Applicant: ASML NETHERLANDS BV
Abstract: Both the 1st and 0th diffraction orders are detected in a scatterometer. The 1st diffraction orders are used to detect the overlay error. The 0th diffraction order is then used to flag if this is a false overlay error calculation of magnitude greater than the bias but smaller than the pitch of the grating. [Fig. 1] & [Fig. 4]
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