公开(公告)号：US20180005803A1

公开(公告)日：2018-01-04

申请号：US15708090

申请日：2017-09-18

Applicant: Lam Research Corporation

Inventor： Zhongkui Tan ,  Qian Fu ,  Ying Wu ,  Qing Xu

IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/308

CPC classification number: H01J37/32146 ,  H01J37/32165 ,  H01J37/32422 ,  H01J2237/0656 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/308

Abstract: For a first period of time, a higher radiofrequency power is applied to generate a plasma in exposure to a substrate, while applying low bias voltage at the substrate level. For a second period of time, a lower radiofrequency power is applied to generate the plasma, while applying high bias voltage at the substrate level. The first and second periods of time are repeated in an alternating and successive manner for an overall period of time necessary to produce a desired effect on the substrate. In some embodiments, the first period of time is shorter than the second period of time such that on a time-averaged basis the plasma has a greater ion density than radical density. In some embodiments, the first period of time is greater than the second period of time such that on a time-averaged basis the plasma has a lower ion density than radical density.

公开(公告)号：US09767991B2

公开(公告)日：2017-09-19

申请号：US14932416

申请日：2015-11-04

Applicant: Lam Research Corporation

Inventor： Zhongkui Tan ,  Qian Fu ,  Ying Wu ,  Qing Xu

IPC: H01L21/306 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/308

CPC classification number: H01J37/32146 ,  H01J37/32165 ,  H01J37/32422 ,  H01J2237/0656 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/308

Abstract: For a first period of time, a higher radiofrequency power is applied to generate a plasma in exposure to a substrate, while applying low bias voltage at the substrate level. For a second period of time, a lower radiofrequency power is applied to generate the plasma, while applying high bias voltage at the substrate level. The first and second periods of time are repeated in an alternating and successive manner for an overall period of time necessary to produce a desired effect on the substrate. In some embodiments, the first period of time is shorter than the second period of time such that on a time-averaged basis the plasma has a greater ion density than radical density. In some embodiments, the first period of time is greater than the second period of time such that on a time-averaged basis the plasma has a lower ion density than radical density.

公开(公告)号：US20160260575A1

公开(公告)日：2016-09-08

申请号：US15059199

申请日：2016-03-02

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Moon Youn JUNG ,  Dong Hoon SONG ,  Jin Sun KIM

IPC: H01J37/06 ,  H01J37/244

CPC classification number: H01J37/06 ,  H01J3/024 ,  H01J2237/049 ,  H01J2237/061 ,  H01J2237/06325 ,  H01J2237/06366 ,  H01J2237/0656 ,  H01J2237/2482

Abstract: Provided may include an electron beam generator, an image apparatus including the same, and an optical apparatus. The optical apparatus includes a first and second laser apparatuses providing a first and second laser beams on a substrate, and a first optical system provided between the first and second laser apparatuses and the substrate to focus the first and second laser beams. The first and second laser beams overlap with each other generating an interference beam, thereby decreasing a spot size of the interference beam to be smaller than a wavelength of each of the first and second laser beams at a focal point.

Abstract translation: 可以提供电子束发生器，包括该电子束发生器的图像装置和光学装置。 光学装置包括在基板上提供第一和第二激光束的第一和第二激光装置，以及设置在第一和第二激光装置与基板之间以使第一和第二激光束聚焦的第一光学系统。 第一和第二激光束彼此重叠，产生干涉光束，从而将干涉光束的光点尺寸减小为小于焦点处的第一和第二激光束的波长的波长。

公开(公告)号：US20150170883A1

公开(公告)日：2015-06-18

申请号：US14418041

申请日：2013-09-25

Applicant: SPP Technologies Co., LTD.

Inventor： Takashi Yamamoto ,  Kazuya Ota ,  Masahiro Sasakura ,  Yasuyuki Hayashi

IPC: H01J37/32 ,  H01L21/67

CPC classification number: H01J37/32623 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32357 ,  H01J37/32458 ,  H01J37/32568 ,  H01J37/32633 ,  H01J37/32724 ,  H01J2237/0656 ,  H01J2237/15 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/67069 ,  H05H1/46 ,  H05H2001/4667

Abstract: The present invention relates to a substrate etching device capable of improving uniformity of in-plane density of generated plasma to uniformly etch an entire substrate surface. A plasma etching device 1 includes a chamber 2 having a plasma generation space 3 and a processing space 4 set therein, a coil 30 disposed outside an upper body portion 6, a platen 40 disposed in the processing space 4 for placing a substrate K thereon, an etching gas supply mechanism 25 supplying an etching gas into the plasma generation space 3, a coil power supply mechanism 35 supplying RF power to the coil 30, and a platen power supply mechanism 45 supplying RF power to the platen 40. Further, a tapered plasma density adjusting member 20 is fixed on an inner wall of the chamber 2 between the plasma generation space 3 and the platen 40 and, in an upper portion of the chamber 2, a cylindrical core member 10 having a tapered portion formed thereon having a diameter decreasing toward a lower end surface thereof is arranged to extend downward.

Abstract translation: 本发明涉及能够提高产生的等离子体的面内密度的均匀性以均匀地蚀刻整个基板表面的基板蚀刻装置。 等离子体蚀刻装置1包括具有等离子体产生空间3和设置在其中的处理空间4的室2，设置在上部主体部分6外侧的线圈30，设置在处理空间4中以将基板K放置在其上的压板40， 向等离子体产生空间3供给蚀刻气体的蚀刻气体供给机构25，向线圈30供给RF电力的线圈供电机构35以及向压板40供给RF电力的台板供电机构45.此外， 等离子体密度调节构件20固定在等离子体产生空间3和压板40之间的腔室2的内壁上，并且在腔室2的上部中具有形成在其上的锥形部分的圆柱形芯构件10， 朝向其下端面向下方延伸设置为向下延伸。

公开(公告)号：US20120080307A1

公开(公告)日：2012-04-05

申请号：US12898281

申请日：2010-10-05

Applicant: Ikuya Kameyama

Inventor： Ikuya Kameyama

IPC: C23C14/46

CPC classification number: C23C14/46 ,  H01J27/024 ,  H01J37/08 ,  H01J2237/0656 ,  H01J2237/083 ,  H01J2237/3146 ,  H01J2237/3151 ,  H01J2237/31701

Abstract: An ion beam system includes a grid assembly having a substantially elliptical pattern of holes to steer an ion beam comprising a plurality of beamlets to generate an ion beam, wherein the ion current density profile of a cross-section of the ion beam is non-elliptical. The ion current density profile may have a single peak that is symmetric as to one of the two orthogonal axes of the cross-section of the ion beam. Alternatively, the single peak may be asymmetric as to the other of the two orthogonal axes of the cross-section of the ion beam. In another implementation, the ion current density profile may have two peaks on opposite sides of one of two orthogonal axes of the cross-section. Directing the ion beam on a rotating destination work-piece generates a substantially uniform rotationally integrated average ion current density at each point equidistant from the center of the destination work-piece.

Abstract translation: 离子束系统包括具有大致椭圆形图案的孔的栅格组件，用于引导包括多个子束的离子束以产生离子束，其中离子束横截面的离子电流密度分布是非椭圆形的 。 离子电流密度分布可以具有与离子束的横截面的两个正交轴中的一个对称的单个峰。 或者，对于离子束的横截面的两个正交轴中的另一个，单个峰可以是不对称的。 在另一个实施方案中，离子电流密度分布可以在横截面的两个正交轴之一的相对侧上具有两个峰。 将离子束引导到旋转的目标工件上，在距离目标工件的中心等距离的点处产生基本均匀的旋转积分的平均离子电流密度。

公开(公告)号：US06528799B1

公开(公告)日：2003-03-04

申请号：US09692150

申请日：2000-10-20

Applicant: Victor Katsap ,  James A. Liddle ,  Masis Mkrtchyan ,  Stuart T. Stanton

Inventor： Victor Katsap ,  James A. Liddle ,  Masis Mkrtchyan ,  Stuart T. Stanton

IPC: H01J37063

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/065 ,  H01J37/153 ,  H01J37/3174 ,  H01J2237/0656 ,  Y10S977/881 ,  Y10S977/887

Abstract: An electron beam lithographic apparatus has an electron gun providing a beam of accelerated electrons, a mask stage adapted to hold a mask in a path of the beam of accelerated electrons, and a workpiece stage adapted to hold a workpiece in a path of electrons that have passed through the mask. The electron gun has a cathode having an electron emission surface, an anode adapted to be connected to a high-voltage power supply to provide an electric field between the cathode and the anode to accelerate electrons emitted from the cathode toward the anode, and a current-density-profile control grid disposed between the anode and the cathode. The current-density-profile control grid is configured to provide an electron gun that produces an electron beam having a non-uniform current density profile. A method of producing a micro-device includes generating a beam of charged particles having a non-uniform charged-particle current density, illuminating a mask with the beam of charged particles, and exposing a workpiece with charged particles from the beam of charged particles.

Abstract translation: 电子束光刻设备具有提供加速电子束的电子枪，适于将加速电子束的路径中的掩模保持的掩模台，以及适于将工件保持在具有 穿过面具。 电子枪具有具有电子发射表面的阴极，适于连接到高压电源的阳极，以在阴极和阳极之间提供电场，以加速从阴极向阳极发射的电子，以及电流 设置在阳极和阴极之间的密度分布控制网格。 电流密度分布控制网格被配置为提供产生具有不均匀电流密度分布的电子束的电子枪。 微型器件的制造方法包括：生成具有不均匀带电粒子电流密度的带电粒子束，用带电粒子束照射掩模，以及从带电粒子束带电的带电粒子露出工件。

公开(公告)号：WO2016110505A2

公开(公告)日：2016-07-14

申请号：PCT/EP2016/050121

申请日：2016-01-06

Applicant: MEYER BURGER (GERMANY) AG

Inventor： MAI, Joachim ,  LUCA, Alfonz ,  SARSTEDT, Margit

IPC: H01J27/02 ,  H01J37/08

CPC classification number: H01J27/024 ,  H01J37/08 ,  H01J2237/0656 ,  H01J2237/083

Abstract: Die Erfindung betrifft eine Vorrichtung zur Extraktion von elektrischen Ladungsträgern aus einem Ladungsträgererzeugungsraum mit mindestens einer Elektrodenanordnung zur Extraktion von Ladungsträgern, wobei die mindestens eine Elektrodenanordnung mindestens eine erste Gitterelektrode und eine zweite Gitterelektrode mit korrespondierenden Öffnungen aufweist. Die erste und die zweite Gitterelektrode enthalten jeweils mindestens einen ersten elektrisch leitfähigen Gitterelektrodenbereich, wobei der mindestens eine erste Gitterelektrodenbereich der ersten Gitterelektrode in einer ersten Lage und der mindestens eine erste Gitterelektrodenbereich der zweiten Gitterelektrode in einer zweiten Lage ausgebildet sind. Die erste Lage und die zweite Lage sind innerhalb der Elektrodenanordnung in Teilchenaustrittsrichtung nacheinander angeordnet und voneinander durch einen ersten Abstand entlang der Teilchenaustrittsrichtung beabstandet, wobei der mindestens eine erste Gitterelektrodenbereich der ersten Gitterelektrode in der ersten Lage einen ersten elektrisch leitfähigen Lagenanteil bildet. Darüber hinaus ist in der ersten Lage ein zweiter elektrisch leitfähiger Lagenanteil ausgebildet, der elektrisch vom ersten Lagenanteil isoliert ist. Der zweite Lagenanteil wird durch mindestens einen zweiten elektrisch leitfähigen Gitterelektrodenbereich der ersten Gitterelektrode oder der zweiten Gitterelektrode gebildet und der zweite Lagenanteil ist elektrisch leitend mit dem mindestens einen ersten Gitterelektrodenbereich der zweiten Gitterelektrode verbunden. Die erfindungsgemäße Vorrichtung zur Extraktion von Ladungsträgern stellt somit eine elektrisch schaltbare Extraktionsgitterelektrodenanordnung dar, mit deren Hilfe die Strahlcharakteristik eines Teilchenstrahls aus extrahierten Ladungsträgern verändert werden kann.

Abstract translation: 本发明涉及一种用于电荷载流子从具有用于电荷载体的提取中，至少一个电极布置的载流子生成室中的提取，其中该至少一个电极组件的至少一个第一栅极电极和与相应的开口的第二栅电极。 第一和第二栅电极的每一个包括至少一个第一导电网状电极区域，其中，所述在第一层中的第一栅电极中的至少一个第一格栅电极区域和形成在第二层的第二栅电极的所述至少一个第一栅极区。 所述第一层和第二层在Teilchenaustrittsrichtung依次定位在电极组件内，并且通过沿着Teilchenaustrittsrichtung的第一距离，其中，在第一层中的第一栅极电极的形成至少一个第一格栅电极区域包括一个第一导电部分隔开。 此外，在第一层，第二导电层部分被形成，这是从第一部分电绝缘。 第二位置部分由第一格栅电极或第二栅极电极和第二片材部分的至少一个第二导电网状电极区域上形成导电连接到第二栅电极的所述至少一个第一栅极区。 用于电荷载体的提取本发明的装置因此表示可电切换的引出栅电极组件，通过该粒子束的束特性可以从提取的载流子来改变。

公开(公告)号：WO2015005569A1

公开(公告)日：2015-01-15

申请号：PCT/KR2014/003552

申请日：2014-04-23

Applicant: 한국표준과학연구원

Inventor： 한철수 ,  조복래 ,  박인용 ,  안상정

IPC: H01J37/26 ,  H01J37/147 ,  H01J37/22

CPC classification number: H01J37/244 ,  H01J37/08 ,  H01J2237/06341 ,  H01J2237/0656 ,  H01J2237/0802 ,  H01J2237/223 ,  H01J2237/24542

Abstract: 본 발명은 금속팁을 포함하는 입자빔 소스; 상기 입자빔 소스로부터 집속된 입자빔을 수신하고, 이로부터 2차전자를 방출하는 마이크로채널 플레이트; 상기 마이크로채널 플레이트로부터 생성된 2차전자를 수신하고 이를 광신호로 변환하는 형광스크린; 상기 형광스크린으로부터 방출되는 광 데이터를 수집하는 영상수집장치; 및 상기 영상수집장치로부터 얻어지는 데이터를 처리하여 영상화하며, 상기 마이크로채널 플레이트로부터 기인하는 잡음을 제거하기 위해 공간 영역(spatial domain)에서 구현되는 저주파 통과필터(low pass filter)를 포함하여 이루어지는 영상처리장치;를 포함하는, 입자빔의 방출 이미지 획득 장치 및 이를 이용하여 입자빔의 방출 이미지를 획득하는 방법에 관한 것이다.

Abstract translation: 本发明涉及一种用于获取粒子束放电图像的装置和使用该装置获取粒子束放电图像的方法，该装置包括：包括金属尖端的粒子束源; 微通道板，用于从粒子束源接收聚焦的粒子束并从其中排出二次电子; 用于接收从微通道板产生的二次电子并将二次电子转换成光信号的荧光屏; 用于收集从荧光屏放出的光学数据的图像采集装置; 以及用于将从图像采集装置获得的数据处理成图像的图像处理装置，该图像处理装置包括在空间域中实现的低通滤波器，以便去除由微通道板产生的噪声。

公开(公告)号：WO2012047914A3

公开(公告)日：2012-06-21

申请号：PCT/US2011054800

申请日：2011-10-04

Applicant: VEECO INSTR INC ,  KAMEYAMA IKUYA

Inventor： KAMEYAMA IKUYA

IPC: C23C14/46 ,  C23C14/34

CPC classification number: C23C14/46 ,  H01J27/024 ,  H01J37/08 ,  H01J2237/0656 ,  H01J2237/083 ,  H01J2237/3142 ,  H01J2237/3151 ,  H01J2237/31701

Abstract: A grid assembly (114, 300) coupled to a discharge chamber of an ion beam source (102) is configured for steering ion beamlets emitted from the discharge chamber at circularly asymmetrically determined steering angles. The grid assembly 114, 300) includes at least a first and a second grid (302, 304) with a substantially circular pattern of holes, wherein each grid (302, 304) comprises holes positioned adjacent to one another. A plurality of the holes of the second grid (304) is positioned with offsets relative to corresponding holes in the first grid (302). Due to the offsets in the holes in the second grid (304), ions passing through the offset holes are electrostatically attracted towards the closest circumferential portion of the downstream offset holes. Thus, the trajectories of ions passing through the offset holes are altered. The beamlet is steered by predetermined asymmetric angles. The predetermined steering angles are dependent upon the hole offsets, voltage applied to the grids 302, 304), and the distance between the grids (302, 304).

Abstract translation: 耦合到离子束源（102）的放电室的栅格组件（114,300）被配置用于以圆形非对称确定的转向角度引导从放电室发射的离子小射束。 网格组件114,300）至少包括具有基本圆形的孔图案的第一和第二网格（302,304），其中每个网格（302,304）包括彼此相邻定位的孔。 第二栅格（304）的多个孔相对于第一栅格（302）中的对应孔偏移地定位。 由于第二栅格（304）中的孔的偏移，穿过偏移孔的离子被静电吸引向下游偏移孔的最靠近的圆周部分。 因此，通过偏移孔的离子的轨迹被改变。 小束通过预定的不对称角度进行操纵。 预定转向角取决于孔偏移，施加到栅格302,304的电压）以及栅格（302,304）之间的距离。

公开(公告)号：EP2903019A4

公开(公告)日：2016-06-08

申请号：EP13842461

申请日：2013-09-25

Applicant: SPP TECHNOLOGIES CO LTD

Inventor： YAMAMOTO TAKASHI ,  OTA KAZUYA ,  SASAKURA MASAHIRO ,  HAYASHI YASUYUKI

IPC: H01L21/3065 ,  H01J37/32 ,  H05H1/46

CPC classification number: H01J37/32623 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32357 ,  H01J37/32458 ,  H01J37/32568 ,  H01J37/32633 ,  H01J37/32724 ,  H01J2237/0656 ,  H01J2237/15 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/67069 ,  H05H1/46 ,  H05H2001/4667

Abstract: The present invention relates to a substrate etching device capable of improving uniformity of in-plane density of generated plasma to uniformly etch an entire substrate surface. A plasma etching device 1 includes a chamber 2 having a plasma generation space 3 and a processing space 4 set therein, a coil 30 disposed outside an upper body portion 6, a platen 40 disposed in the processing space 4 for placing a substrate K thereon, an etching gas supply mechanism 25 supplying an etching gas into the plasma generation space 3, a coil power supply mechanism 35 supplying RF power to the coil 30, and a platen power supply mechanism 45 supplying RF power to the platen 40. Further, a tapered plasma density adjusting member 20 is fixed on an inner wall of the chamber 2 between the plasma generation space 3 and the platen 40 and, in an upper portion of the chamber 2, a cylindrical core member 10 having a tapered portion formed thereon having a diameter decreasing toward a lower end surface thereof is arranged to extend downward.