公开(公告)号：NL2005748A

公开(公告)日：2011-01-06

申请号：NL2005748

申请日：2010-11-24

Applicant: ASML NETHERLANDS BV

Inventor： LOOPSTRA ERIK ,  BANINE VADIM ,  BRULS RICHARD ,  IVANOV VLADIMIR ,  NEERHOF HENDRIK ,  YAKUNIN ANDREI ,  SCACCABAROZZI LUIGI

IPC: G03F7/20 ,  H05G2/00

公开(公告)号：NL2004081A

公开(公告)日：2010-08-16

申请号：NL2004081

申请日：2010-01-11

Applicant: ASML NETHERLANDS BV

Inventor： GLUSHKOV DENIS ,  BANINE VADIM ,  SJMAENOK LEONID ,  SALASHCHENKO NIKOLAY ,  CHKHALO NIKOLAY

IPC: G02B5/08 ,  G03F7/20

公开(公告)号：NL2003211A1

公开(公告)日：2010-02-16

申请号：NL2003211

申请日：2009-07-16

Applicant: ASML NETHERLANDS BV

Inventor： BANINE VADIM ,  SJMAENOK LEONID

IPC: G03F7/20

公开(公告)号：NL2003256A1

公开(公告)日：2010-02-09

申请号：NL2003256

申请日：2009-07-22

Applicant: ASML NETHERLANDS BV

Inventor： SJMAENOK LEONID ,  BANINE VADIM ,  MOORS ROEL ,  GLUSHKOV DENIS ,  YAKUNIN ANDREY

IPC: G03F7/20

公开(公告)号：DE102006054726A1

公开(公告)日：2008-05-29

申请号：DE102006054726

申请日：2006-11-21

Applicant: ZEISS CARL SMT AG ,  ASML NETHERLANDS BV

Inventor： EHM DIRK HEINRICH ,  MOORS JOHANNES HUBERTUS JOSEPH ,  WOLSCHRIJN BASTIAAN THEODOOR ,  BANINE VADIM ,  IVANOV VLADIMIR VITALEVITSCH

IPC: B08B7/00

Abstract: A method and an optical arrangement for removing contamination on optical surfaces (26), which are arranged in a vacuum environment in an optical arrangement, preferably in a projection exposure apparatus (1) for EUV lithography. The method includes generating a residual gas atmosphere containing molecular hydrogen (18) and at least one inert gas (17) in the vacuum environment, generating inert gas ions (21) by ionization of the inert gas (17), preferably with EUV radiation (20), and generating atomic hydrogen (27) by acceleration of the inert gas ions (21) in the residual gas atmosphere, to remove the contamination.

公开(公告)号：NL2011484A

公开(公告)日：2014-04-29

申请号：NL2011484

申请日：2013-09-23

Applicant: ASML NETHERLANDS BV

Inventor： NIKIPELOV ANDREY ,  BANINE VADIM ,  YAKUNIN ANDREI

IPC: G03F7/20

公开(公告)号：NL2008391A

公开(公告)日：2012-10-08

申请号：NL2008391

申请日：2012-03-01

Applicant: ASML NETHERLANDS BV

Inventor： BANINE VADIM ,  WAGNER CHRISTIAN ,  SINGH HARMEET

IPC: G03F7/20 ,  H05G2/00

公开(公告)号：SG176740A1

公开(公告)日：2012-01-30

申请号：SG2011090974

申请日：2010-07-02

Applicant: ASML NETHERLANDS BV

Inventor： IVANOV VITALII ,  DEN BOEF ARIE ,  BANINE VADIM ,  SCACCABAROZZI LUIGI ,  IOSAD NIKOLAY

IPC: G03F1/00

Abstract: Methods and systems for inspection of an object include the use of spectroscopic techniques for the detection of unwanted particles on an object's surface, based on the different responses of the unwanted particles as compared with the object to be inspected due to their different materials. Time resolved spectroscopy and/or energy resolved spectroscopy of secondary photon emission from the surface of the object can be used to obtain Raman and photoluminescence spectra. The objects to be inspected can for example be a patterning device as used in a lithographic process, for example a reticle, in which case the presence of metal, metal oxide or organic particles can be detected, for example. The methods and apparatus are highly sensitive, for example, being able to detect small particles (sub 100 nm, particularly sub 50 nm) on the patterned side of an EUV reticle.

公开(公告)号：NL2007630A

公开(公告)日：2011-11-23

申请号：NL2007630

申请日：2011-10-20

Applicant: ASML NETHERLANDS BV

Inventor： SCACCABAROZZI LUIGI ,  BANINE VADIM ,  LUTTIKHUIS BERNARDUS ,  KOOLE ROELOF ,  WONDERGEM HENDRIKUS ,  GRAAT PETRUS

IPC: G03F7/20

公开(公告)号：SG174126A1

公开(公告)日：2011-10-28

申请号：SG2011055241

申请日：2010-01-11

Applicant: ASML NETHERLANDS BV

Inventor： GLUSHKOV DENIS ,  BANINE VADIM ,  SJMAENOK LEONID ,  SALASCHENKO NIKOLAI ,  CHKHALO NIKOLAY

Abstract: A multilayer mirror (7) is constructed and arranged to reflect radiation having a wavelength in the range of 2-8 nm. The multilayer mirror has alternating layers (4, 6), the alternating layers comprising a first layer and a second layer, the first and second layers being selected from the group consisting of : U and B4C layers, Th and B4C layers, La and B9C layers, La and B4C layers, U and B9C layers, Th and B9C layers, La and B layers, U and B layers, C and B layers, Th and B layers, U compound and B4C layers, Th compound and B4C layers, La compound and B9C layers, La compound and B4C layers, U compound and a B9C layers, Th compound and a B9C layers, La compound and a B layers, U compound and B layers, and Th compound and a B layers, wherein at least one of the first layers is separated from the second layer by an interlayer (7) disposed between at least one of the first layers and the second layer.