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公开(公告)号:GB2485714A8
公开(公告)日:2015-09-23
申请号:GB201203306
申请日:2010-08-12
Applicant: IBM , RF MICRO DEVICES INC
Inventor: ANDERSON FELIX P , MCDEVITT THOMAS L , STAMPER ANTHONY K , HAMMOND JONATHAN HALE , COSTA JULIO CARLOS
IPC: B81C1/00
Abstract: Integrated MEMS switches, design structures and methods of fabricating such switches are provided. The method includes forming at least one tab (32a) of sacrificial material (36) on a side of a switching device (34) which is embedded in the sacrificial material. The method further includes stripping the sacrificial material through at least one opening (40) formed on the at least one tab which is on the side of the switching device, and sealing the at least one opening with a capping material (42).
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公开(公告)号:GB2494359B
公开(公告)日:2015-01-14
申请号:GB201300085
申请日:2011-06-08
Applicant: IBM
Inventor: HERRIN RUSSELL T , JAHNES CHRISTOPHER V , STAMPER ANTHONY K , WHITE ERIC J
Abstract: A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes patterning a wiring layer to form at least one fixed plate and forming a sacrificial material on the wiring layer. The method further includes forming an insulator layer of one or more films over the at least one fixed plate and exposed portions of an underlying substrate to prevent formation of a reaction product between the wiring layer and a sacrificial material. The method further includes forming at least one MEMS beam that is moveable over the at least one fixed plate. The method further includes venting or stripping of the sacrificial material to form at least a first cavity.
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公开(公告)号:GB2506770B
公开(公告)日:2014-08-20
申请号:GB201321363
申请日:2010-08-12
Applicant: IBM
Inventor: ANDERSON FELIX P , MCDEVITT THOMAS LEDDY , STAMPER ANTHONY K
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公开(公告)号:GB2506770A
公开(公告)日:2014-04-09
申请号:GB201321363
申请日:2010-08-12
Applicant: IBM , RF MICRO DEVICES INC
Inventor: ANDERSON FELIX P , MCDEVITT THOMAS LEDDY , STAMPER ANTHONY K , COSTA JULIO CARLOS , HAMMOND JONATHAN HALE
Abstract: A MEMS structure, comprising a lower forcing electrode and a lower contact electrode, remote from the lower forcing electrode; a cantilever beam 34 is positioned above the lower forcing electrode and the lower contact electrode; a capping layer 42 hermetically seals the lower forcing electrode, the lower contact electrode and the cantilever beam 34, the capping layer 42 having a sealed portion 40 positioned on a side of the lower contact electrode, remote from the lower forcing electrode and an end portion of the cantilever beam 34. Wherein the cantilever beam 34 may be devoid of stresses from material variability of a sealing material used to seal the capping layer 42.
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公开(公告)号:GB2505600A
公开(公告)日:2014-03-05
申请号:GB201321798
申请日:2012-03-14
Applicant: IBM
Inventor: JAHNES CHRISTOPHER V , STAMPER ANTHONY K
Abstract: Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are provided. The method of forming a MEMS structure includes forming fixed actuator electrodes (115) and a contact point on a substrate. The method further includes forming a MEMS beam (100) over the fixed actuator electrodes and the contact point. The method further includes forming an array of actuator electrodes (105') in alignment with portions of the fixed actuator electrodes, which are sized and dimensioned to prevent the MEMS beam from collapsing on the fixed actuator electrodes after repeating cycling. The array of actuator electrodes are formed in direct contact with at least one of an underside of the MEMS beam and a surface of the fixed actuator electrodes.
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公开(公告)号:GB2498264A
公开(公告)日:2013-07-10
申请号:GB201300017
申请日:2013-01-02
Applicant: IBM
Inventor: JAHNES CHRISTOPHER VINCENT , STAMPER ANTHONY K
Abstract: A MEMS cantilever has a first wide portion attached to a support and a second narrower portion attached to the first portion. Tapered cantilever portions and beam structures having narrow and tapered portions are also described (figure 10). The reduction in width of the beam or cantilever in the vicinity of the pull-in portion reduces the occurrence of snap down when the structure is used as a varactor. The MEMS beam and cantilever structures may also be used for RF devices, contact switches or bulk acoustic wave resonators.
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公开(公告)号:DE102012223979A1
公开(公告)日:2013-07-04
申请号:DE102012223979
申请日:2012-12-20
Applicant: IBM
Inventor: ADKISSON JAMES W , CANDRA PANGLIJEN , DUNBAR THOMAS J , GAMBINO JEFFREY P , JAFFE MARK D , STAMPER ANTHONY K , WOLF RANDY L
Abstract: Hierin werden schaltbare und/oder abstimmbare Filter, Herstellungsverfahren und Entwurfsstrukturen offenbart. Das Verfahren zum Bilden der Filter schließt das Bilden mindestens einer piezoelektrischen Filterstruktur ein, die eine Vielzahl von Elektroden aufweist, die auf einem piezoelektrischen Substrat gebildet sind. Das Verfahren schließt außerdem das Bilden einer mikro-elektromechanischen Struktur (MEMS) ein, die einen MEMS-Balken aufweist, der über dem piezoelektrischen Substrat und an einer Stelle angeordnet ist, an welcher der MEMS-Balken bei Betätigung die piezoelektrische Filterstruktur kurzschließt, indem er mit mindestens einer der Vielzahl von Elektroden in Kontakt kommt.
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公开(公告)号:MY117703A
公开(公告)日:2004-07-31
申请号:MYPI20010672
申请日:2001-02-14
Applicant: IBM
Inventor: ELLIS-MONAGHAN JOHN J , FEENEY PAUL M , GEFFKEN ROBERT M , LANDIS HOWARD S , PREVITI-KELLY ROSEMARY A , REUTER BETTE BERGMAN L , RUTTEN MATTHEW J , STAMPER ANTHONY K , YANKEE SALLY J
IPC: H01L23/52 , H01L23/58 , H01L21/3205 , H01L21/60 , H01L21/768 , H01L23/31 , H01L23/485 , H01L23/532
Abstract: A METHOD AND STRUCTURE FOR A SEMICONDUCTOR CHIP INCLUDES A PLURALITY OF LAYERS OF INTERCONNECT METALLURGY, AT LEAST ONE LAYER OF DEFORMABLE DIELECTRIC MATERIAL OVER THE INTERCONNECT METALLURGY, AT LEAST ONE INPUT/OUTPUT BONDING PAD, AND A SUPPORT STRUCTURE THAT INCLUDES A SUBSTANTIALLY RIGID DIELECTRIC IN A SUPPORTING RELATIONSHIP TO THE PAD THAT AVOIDS CRUSHING THE DEFORMABLE DIELECTRIC MATERIAL.
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公开(公告)号:DE10110566A1
公开(公告)日:2001-09-27
申请号:DE10110566
申请日:2001-03-06
Applicant: IBM
Inventor: ELLIS-MONAGHAN JOHN J , FEENEY PAUL M , GEFFKEN ROBERT M , LANDIS HOWARD S , PREVITI-KELLY ROSEMARY A , BERGMAN-REUTER BETTE L , RUTTEN MATTHEW J , STAMPER ANTHONY K , YANKEE SALLY J
IPC: H01L23/52 , H01L21/3205 , H01L21/60 , H01L21/768 , H01L23/31 , H01L23/485 , H01L23/532 , H01L23/50 , H01L21/314
Abstract: Over the coupling metallising is deposited at least one film of deformable dielectric material. A support structure, contg. rigid dielectric, is connected to the deformable dielectric and to an input-output bond island.The support structure also supports the bond island to prevent the fracture of the deformable dielectric material. Typically the support structure contains a cap over the deformable dielectric material, coplanar with the structured last metallising layer. Independent claims are included for integrated circuit chip and for mfr. of semiconductor chip.
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公开(公告)号:GB2485714B8
公开(公告)日:2015-09-23
申请号:GB201203306
申请日:2010-08-12
Applicant: IBM , RF MICRO DEVICES INC
Inventor: ANDERSON FELIX P , MCDEVITT THOMAS L , STAMPER ANTHONY K , HAMMOND JONATHAN HALE , COSTA JULIO CARLOS
IPC: B81C1/00
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