Abstract:
PURPOSE: An adhesive composition for semiconductor and an adhesive film including the same are provided to smoothly remove void during EMC molding by giving residual cure index after various curing processes. CONSTITUTION: An adhesive composition for semiconductor has a compressive strength of 100-150 gf/mm^2 at 125 deg. Celsius after curing for 60 minutes. The adhesive compound comprises a binder resin, an epoxy resin, and an amine hardener. The binder resin is a (meth) acrylate copolymer. The amine hardener comprises a first amine hardener marked as chemical formula 1 and a secondary amine hardener marked as chemical formula 2. The adhesive composition has a foamable void of less than 15% at 150 deg. Celsius after curing for 10 minutes and 30 minutes.
Abstract:
PURPOSE: An adhesive composition for semiconductor is provided to satisfy electric connection reliability between bump chips, to conduct flux process removing an oxide layer of a Cu bump and a solder by adhesive layer between bump chips, and to sufficiently connect a bump and a solder at chip bonding due to heating and compression. CONSTITUTION: An adhesive composition comprises an acryl-based polymer resin, epoxy-based resin, and imidazole compound. The imidazole compound has melting point of 200-270 °C. The composition has melting viscosity of 2 ×10^4 - 15 ×10^4 poise at 150 °C. The equivalent of the epoxy-based resin is about 200-250 g/eq, and the melting viscosity at 150 °C is about 0.01-0.2 Pa·s. the adhesion of the composition is about 15 - 30 kgf/25mm^2. The acrylic polymer resin contains an epoxy group, and the glass transition temperature is about (-30) - 80°C.
Abstract:
PURPOSE: A dicing die-bonding film is provided to differently produce peeling force of a surface contacting with a base film and a surface contacting with a wafer by adding specific metal oxide filler. CONSTITUTION: A dicing die-bonding film(10) has a first side(A) contacting to a base film and a second side(B) contacting to a semiconductor wafer. The dicing die-bonding film is formed into monolayer. Peel force of the first side is under 0.1 N/25mm. The peel force of the second side is over 0.2 N/25mm. A light hardening degree of the first side is 90% to 99%. A light hardening degree of the second side is 10% to 50%. The ratio of the first side and the second side is 1:5-30. The dicing die-bonding film includes a metal oxide particle selected by titanium dioxide, zinc oxide, or mixture thereof.
Abstract:
PURPOSE: A semiconductor adhesive film composition is provided to effectively remove voids generated during die adhesion process, and to reduce film modulus even at semi cure process conducted after die adhesion. CONSTITUTION: A semiconductor adhesive film composition comprises a thermoplastic polymer resin, an epoxy-based resin, and an amine type cured resin. The amine type cured resin is in chemical formula 1. In chemical formula 1, A is SO2, CH2 or oxygen, R1-R10 is respectively and independently selected from hydrogen, a C1-3 alkyl group, and amine. The amine type cured resin has weight average molecular weight of 500g/mol or less. The semiconductor adhesive film composition additionally comprises 1-40 parts by weight of a filler, based on 100.0 parts by weight.
Abstract:
PURPOSE: Adhesive film is provided to retrain the failure of bonding wire with retraining the introduce of separate spacer between semiconductor chips, and to restrain adhesive defect like void in interface. CONSTITUTION: Adhesive film for semiconductor packaging comprises a first adhesive layer(60) in which bonding wire is penetrated and accepted, and a second bonding layer attached to a lower chip. Before hardening, the first adhesive layer has lower viscosity than the second adhesive layer. The first adhesive layer and the second adhesive layer has the viscosity difference of 10^1-10^3 poise at 100 °C.
Abstract:
PURPOSE: A semiconductor adhesive composition for stealth dicing is provided to facilitate low temperature individualization and cuttability by the increase of low temperature elastic modulus, and to secure substrate embedding property and adhesion reliability. CONSTITUTION: A semiconductor adhesive composition for stealth dicing comprises (a) 100 parts by weight of a polymer resin having a glass transition temperature of 5 °C or more and less than 30°C, (b) 1-20 parts by weight of an epoxy-based resin including a liquid-phase epoxy resin and a solid-phase epoxy resin, (c) 1-20 parts by weight of phenol type epoxy resin hardener, (d) 10-80 parts by weight of inorganic filler, (e) 0.1-20 parts by weight of curing catalyst, and (f) 0.1-10 parts by weight of silane coupling agents.
Abstract:
PURPOSE: An adhesive composition for a semiconductor device is provided to effectively remove voids caused by in a die attach process when molded with an epoxy molding agent. CONSTITUTION: An adhesive composition for a semiconductor device includes 80-50 parts by weight of elastomer resin, 10-20 parts by weight of epoxy resin, 1-10 parts by weight of hardened resin, 0.01-10 parts by weight of curing accelerator, 0.01-10 parts by weight of silane coupling agent, and 5-10 parts by weight of filler. The epoxy resin comprises 20-60 parts by weight of bifunctional epoxy resin and polyfunctional epoxy resin based on 100.0 parts by weight of the epoxy resin.
Abstract:
본 발명은 스텔스 다이싱용 반도체용 접착 조성물에 관한 것으로, 보다 상세하게는 유리전이온도가 0~10℃인 제1 고분자 수지와 유리전이온도가 30~60℃인 제2 고분자 수지를 함유하는 고분자 성분, 에폭시계 수지, 페놀형 에폭시 수지 경화제, 무기 필러, 경화촉매 및 커플링제를 포함하는 접착 조성물에 관한 것이다. 본 발명에 따른 반도체용 접착 조성물은 유리전이온도가 서로 다른 2종의 고분자 수지를 사용하여 저온 탄성률의 증가로 저온 개별화 및 절단성이 용이하고 또한 경화 후 고온 탄성률의 저하로 기판 매입성 및 접착 신뢰성을 확보할 수 있다. 접착 조성물, 스텔스 다이싱, 유리전이온도
Abstract:
본 발명은 아크릴계 고분자, 에폭시 수지, 페놀형 경화 수지, 경화 촉매, 실란 커플링제 및 충진제를 포함하고 경화 후 공-연속으로 상 분리되는 반도체 다이 접착제 조성물 및 이로부터 제조된 접착제 필름에 관한 것이다. 본 발명에 따르는 접착 필름은 경화부의 함량이 많더라도 연 구조성과 필름의 인장강도 증가를 동시에 만족시키므로, 필름이 끊어지지 않고 단단하여 반도체 조립시 높은 신뢰성을 확보할 수 있다. 공-연속 상, 가교성 관능기, 반도체 접착 필름, 다이 접착(die attach), 아크릴계 고분자, 페놀형 경화 수지, 경화 촉매, 실란 커플링제
Abstract:
PURPOSE: A high temperature fast curable adhesive film composition, and an adhesive film using thereof are provided to prevent the crack of a bump and the shake between chips by reducing the mobility of the adhesive film when assembling a semiconductor device. CONSTITUTION: A high temperature fast curable adhesive film composition contains 30~70 parts of polymer resin by weight, 5~30 parts of epoxy resin by weight, 5~30 parts of phenol type epoxy resin hardener by weight, 0.5~20 parts of curing accelerator, 0.1~5 parts of silane coupling agent by weight, and 5~60 parts of filler by weight, for 100 parts of solid components of the adhesive film composition. The epoxy equivalent of the epoxy resin is the maximum 200 grams per eq.