Abstract:
The method comprises providing a semiconductor substrate (1), which has a main surface (12) and an opposite further main surface (13), arranging a contact pad (19) above the further main surface, forming a through-substrate via (4) from the main surface to the further main surface at a distance from the contact pad and, by the same method step together with the through-substrate via, forming a further through- substrate via (14) above the contact pad, arranging a hollow metal via layer (5) in the through-substrate via and, by the same method step together with the metal via layer, arranging a further metal via layer (15) in the further through- substrate via, the further metal via layer contacting the contact pad, and removing a bottom portion of the metal via layer to form an optical via laterally surrounded by the metal via layer.
Abstract:
A novel method for manufacturing embedded a capacitive stack and a novel capacitive stack apparatus are provided having a capacitive core that serves as a structural substrate on which alternating thin conductive foils and nanopowder-loaded dielectric layers may be added and tested for reliability. This layering and testing allows early fault detection of the thin dielectric layers of the capacitive stack. The capacitive stack may be configured to supply multiple isolated capacitive elements that provide segregated, device-specific decoupling capacitance to one or more electrical components. The capacitive stack may serve as a core substrate on which a plurality of additional signaling layers of a multilayer circuit board may be coupled.
Abstract:
In one embodiment, a laminated printed circuit board translator is provided. In some embodiments, the translator includes a receiving board adapted to receive a pin, the receiving board includes a plated via extending through the receiving board and has a hole for receiving a pin. An interface board laminated with the receiving board has a controlled depth via extending through it to contact a conductive trace. The conductive trace extends between the receiving board and the interface board to connect the plated via of the receiving board with the controlled depth via of the interface board. The controlled depth via is configured so that it is capable of being plated through a single sided drilled opening in the interface board. Some embodiments have a pad on the interface board connected to the controlled depth via.
Abstract:
Object: To provide a connection structure of a wiring board and an electronic part with no interaction with the external magnetic field and a shield wiring structure for a wiring board. Means: An equipotential double sidewall (18) made of a conductor is so provided as to surround solder masses (19, 20) at connection parts (A, B) as possible and a shield pattern (15) is formed at the upper end thereof. The height of the shield pattern (15) is greater than the central height of the solder masses (19, 20). A signal transmitted or received between an IC (2) and a wiring board (1) is thereby not influenced by the external magnetic field.
Abstract:
Es wird ein Verfahren zur Herstellung einer Mehrlagenleiterplatte (1) mit Sacklöchern (2) zur elektrischen Anbindung von Innenlagen (4) genannt, wobei Sacklöcher (2) mit insbesondere kleinem Durchmesser hergestellt werden und die Sacklöcher ohne vorhergehende chemische bzw. elektrochemische Metallisierung mit elektrisch leitfähigem Material (9) gefüllt werden und Durchkontaktierungslöcher (3) hergestellt werden und die Durchkontaktierungslöcher (3) und die Oberflächen der Mehrlagenleiterplatte (7) in einer Galvanikanlage mit Kupfer (8) beschichtet werden. Weiter wird eine derart hergestellte Mehrlagenleiterplatte genannt und die Anwendung zur Verwendung als Träger bzw. Verdrahtungselement für Bauelemente und eine Anlage zur Durchführung des Verfahrens genannt.
Abstract:
Provided are semiconductor packages comprising at least one thin-film capacitor attached to a printed wiring board core through build-up layers, wherein a first electrode of the thin-film capacitor comprises a thin nickel foil, a second electrode comprises a copper electrode, and a copper layer is formed on the nickel foil. The interconnections between the thin-film capacitor and the semiconductor device provide a low inductance path to transfer charge to and from the semiconductor device. Also provided are methods for fabricating such semiconductor packages.