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公开(公告)号：KR1020120059037A
公开(公告)日：2012-06-08
申请号：KR1020100120638
申请日：2010-11-30
Applicant: 한국전자통신연구원
CPC classification number: H02N2/18 , H01L35/00 , H01L41/113 , Y10T307/696
Abstract: PURPOSE: A hybrid energy converter and a portable device including the same are provided to store an environment-friendly energy source which includes a temperature difference, vibration, pressure, and etc. by converting into electric energy, thereby charging a battery of the portable device without a separate charging apparatus. CONSTITUTION: A thermoelectric/piezoelectric device part(110) comprises piezoelectric device layers(112,114) which generate voltage. An energy source selection part(130) selects the voltage generated from the piezoelectric device layer. A voltage regulator(140) stores the selected voltage in an energy storage apparatus(200) by controlling the selected voltage. A protective layer prevents contamination and damage. A first insulating layer electrically and thermally insulates the piezoelectric device layers from each other. A second insulating layer electrically and thermally insulates the thermoelectric/piezoelectric device part from a substructure.
Abstract translation: 目的：提供一种混合能量转换器和包括该混合能量转换器的便携式装置，以通过转换成电能来存储包括温度差，振动，压力等的环境友好的能量源，从而对便携式装置的电池充电 没有单独的充电装置。 构成：热电/压电器件部件（110）包括产生电压的压电器件层（112,114）。 能量选择部（130）选择从压电元件层产生的电压。 电压调节器（140）通过控制所选择的电压将所选择的电压存储在能量存储装置（200）中。 保护层可防止污染和损坏。 第一绝缘层使压电元件层彼此电绝热。 第二绝缘层将热电/压电器件部件与子结构电热隔离。
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公开(公告)号：KR1020110095109A
公开(公告)日：2011-08-24
申请号：KR1020100088107
申请日：2010-09-08
Applicant: 한국전자통신연구원
IPC: B82B3/00 , H01L35/02 , H01L27/146
CPC classification number: H01L35/32 , H01L27/146 , H01L35/14 , H01L35/34
Abstract: PURPOSE: A thermoelectric element, a method for forming the same, a temperature detecting sensor using the same, and a heating source image sensor using the same are provided to mass-produce nanowires and reduce time required for forming the nanowires using a photo-etching process and an ashing process. CONSTITUTION: A first nanowrie(132) and a second nanowire(134) are separately arranged on a substrate. A first silicon thin film(122) is in connection with one end of the first nanowire. A second silicon thin film(124) is in connection with one end of the second nanowire. A third silicon thin film(126) is in connection with another end of the first nanowire and another end of the second nanowire. The first nanowire and the second nanowire are expanded to the horizontal direction with respect to the upper side of the substrate. A method for forming a thermoelectric element includes the following: An insulating film and a silicon layer are successively formed on the substrate. A photo-resist pattern with a first line-width is formed on the silicon layer. A photo-resist micropattern with a second line-width is formed by implementing an ashing process with respect to the photo-resist pattern. An etching process is implemented with respect to the silicon layer using the photo-resist micropattern as a mask to form the nanowires.
Abstract translation: 目的：提供一种热电元件，其形成方法，使用该温度检测传感器的温度检测传感器和使用该温度检测传感器的加热源图像传感器，以大量生产纳米线并减少使用光蚀刻形成纳米线所需的时间 过程和灰化过程。 构成：第一纳米纤维（132）和第二纳米线（134）分别布置在基底上。 第一硅薄膜（122）与第一纳米线的一端相连。 第二硅薄膜（124）与第二纳米线的一端连接。 第三硅薄膜（126）与第一纳米线的另一端和第二纳米线的另一端连接。 第一纳米线和第二纳米线相对于基板的上侧向水平方向扩展。 形成热电元件的方法包括：在基板上依次形成绝缘膜和硅层。 在硅层上形成具有第一线宽的光刻胶图形。 通过对光刻胶图案实施灰化处理，形成具有第二线宽的光刻胶微图案。 使用光致抗蚀剂微图案作为掩模，相对于硅层实现蚀刻工艺以形成纳米线。
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公开(公告)号：KR101058369B1
公开(公告)日：2011-08-22
申请号：KR1020070127565
申请日：2007-12-10
Applicant: 한국전자통신연구원
CPC classification number: G01N33/5432 , G01N27/4145 , G01N27/4146 , G01N33/5438 , Y10S977/721 , Y10S977/784 , Y10S977/938
Abstract: 본 발명은 나노점을 이용한 바이오 센서 및 그 제조 방법에 관한 것으로, 감지하고자 하는 타겟분자에 전하로 대전된 나노점을 결합하여 실리콘 나노선의 전기전도도가 쉽게 변화되도록 함으로써, 우수한 민감도를 갖는 바이오 센서를 저렴한 비용으로 제조할 수 있는 것을 특징으로 한다.
실리콘 나노선, 바이오 센서, 전계효과 트랜지스터, 나노점-
公开(公告)号：KR1020110073166A
公开(公告)日：2011-06-29
申请号：KR1020100024621
申请日：2010-03-19
Applicant: 한국전자통신연구원
IPC: H01L35/00
Abstract: PURPOSE: A flexible thermoelectric device, a wireless sensor node with the same, and a manufacturing method thereof are provided to sense a temperature change amount by an output voltage of the flexible thermoelectric device, thereby realizing a wireless sensor structure of a simple structure. CONSTITUTION: A plurality of P-type semiconductors(210) and a plurality of N-type semiconductors make a pair. A lower metal(230) electrically connects the bottom of the P-type semiconductors with the bottom of the N-type semiconductors. An upper metal(250) electrically connects the top of the P-type semiconductors with the top of the N-type semiconductors. An upper protection film is attached to the upper recess of a structure which comprises the P-type semiconductors, a P-type metal, the N-type semiconductors, an N-type metal, and the upper metal. A lower protection film is attached to the lower recess of the structure.
Abstract translation: 目的：提供一种柔性热电装置，具有其的无线传感器节点及其制造方法，以通过柔性热电装置的输出电压来感测温度变化量，从而实现简单结构的无线传感器结构。 构成：多个P型半导体（210）和多个N型半导体成对。 下部金属（230）将P型半导体的底部与N型半导体的底部电连接。 上部金属（250）将P型半导体的顶部与N型半导体的顶部电连接。 上保护膜连接到包括P型半导体，P型金属，N型半导体，N型金属和上金属的结构的上凹部。 下部保护膜连接到结构的下凹部。
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公开(公告)号：KR101026468B1
公开(公告)日：2011-04-01
申请号：KR1020080089237
申请日：2008-09-10
Applicant: 한국전자통신연구원
CPC classification number: G01N33/54373 , B01L3/502761 , B01L2200/143 , B01L2300/0636 , B01L2300/0645 , B01L2300/0867 , B01L2300/163 , B01L2400/0415 , G01N27/4145
Abstract: FET를 이용한 생분자 검출 장치 및 검출 방법이 제공된다. 생분자 검출 장치는 기판, 상기 기판에 서로 이격되어 배치된 소오스 및 드레인 전극, 소오스 및 드레인 전극 사이의 채널 영역 및 채널 영역에 고정된 프로브 분자를 포함하는 FET, 프로브 분자가 고정된 FET의 채널 영역으로, 저이온 농도의 기준 버퍼 용액 및 타겟 분자를 포함하는 고이온 농도의 반응 용액을 선택적으로 공급하는 미세 유체 공급부 및 프로브 분자가 고정된 FET의 채널 영역에서의 제 1 전류 값과, 고이온 농도의 반응 용액에서 결합된 프로브 분자와 타겟 분자가 고정된 FET의 채널 영역에서의 제 2 전류 값을 측정하여 타겟 분자를 검출하는 생분자 검출부를 포함한다.
생분자, 이온 세기, 반응 용액, 기준 버퍼 용액, 안정화 버퍼, 전계 효과 트랜지스터-
Patent Agency Ranking
公开(公告)号：KR1020110014786A
公开(公告)日：2011-02-14
申请号：KR1020090072313
申请日：2009-08-06
Applicant: 한국전자통신연구원
IPC: H01L35/02
Abstract: PURPOSE: A thermoelectric device having improved thermoelectric efficiency and manufacturing a method thereof are provided to increase thermoelectric efficiency by using a thermal insulating film having low thermoelectric efficiency. CONSTITUTION: A heat absorbing film(230) is formed on a substrate(210) and absorbs an outer heat source. A leg(240) transfers the heat absorbed through the heat absorbing film to the heat radiation film. A heat radiation film(250) emits the heat which it is transmitted from the leg to outside. Thermal isolation films(220,260) reduce the heat transfer rate at the leg. The thermal isolation film is formed in at least one of the leg lower part and upper part.
Abstract translation: 目的：提供一种具有改善的热电效率的热电装置及其制造方法，以通过使用具有低热电效率的绝热膜来提高热电效率。 构成：在基板（210）上形成吸热膜（230）并吸收外部热源。 腿部240将通过吸热膜吸收的热量传递到散热膜。 散热片（250）发射从腿部向外部传递的热量。 隔热膜（220,260）降低了腿部的传热速率。 热隔离膜形成在腿部下部和上部中的至少一个中。
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公开(公告)号：KR100912111B1
公开(公告)日：2009-08-13
申请号：KR1020070100558
申请日：2007-10-05
Applicant: 한국전자통신연구원
IPC: H01L27/098 , H01L27/095 , B82Y40/00
CPC classification number: H01L29/0673
Abstract: 본 발명은 소스 및 드레인 전극이 금속실리사이드로 구성되고, 나노선을 채널로 이용하는 쇼트키 장벽 나노선 전계 효과 트랜지스터(Schottky Barrier Nano Wire Field Effect Transistor) 및 그 제조방법에 관한 것으로, 이를 위해 본 발명은 기판에서 부양되어(suspended) 나노선으로 형성된 채널; 상기 채널의 양끝단과 전기적으로 연결되어 상기 기판 상부에 금속실리사이드로 형성된 소스 및 드레인 전극; 상기 채널을 둘러싸는 형태로 마련된 게이트전극 및 상기 채널과 게이트전극 사이에 형성된 게이트절연막을 포함하는 쇼트키 장벽 나노선 전계 효과 트랜지스터를 제공한다.
나노선, 탄소나노튜브, 금속실리사이드, 트랜지스터, 쇼트키 장벽-
公开(公告)号：KR1020090065272A
公开(公告)日：2009-06-22
申请号：KR1020070132758
申请日：2007-12-17
Applicant: 한국전자통신연구원
CPC classification number: G01N27/4146 , G01N27/4145 , Y10S977/71 , Y10S977/742 , Y10S977/963 , G01N33/48 , G01N23/00
Abstract: A biosensor is provided to lower operation current in sensing part of biomass lowering contact resistance between silicon nanowire and metal electrode. A biosensor comprises a silicon plate(200), source area(210), drain area(220), insulating layer(230) and silicon nano wire(240). The source area and drain area is arranged on the silicon plate. The insulating layer is arranged between source area and drain area. The silicon nano wire comprises defect area(241) and is arranged on the source area and drain area. A method for manufacturing the biosensor comprises: a step of preparing the silicon plate; a step of forming source area and drain area on the silicon plate; a step of arranging the silicon nano wire on the source area and drain area; and a step of irradiating electronic beam in one area of the silicon nano wire to form the defect area.
Abstract translation: 提供生物传感器来降低操作电流，以感测部分生物质降低硅纳米线与金属电极之间的接触电阻。 生物传感器包括硅板（200），源区（210），漏区（220），绝缘层（230）和硅纳米线（240）。 源极区域和漏极区域布置在硅板上。 绝缘层布置在源区和漏区之间。 硅纳米线包括缺陷区（241），并且布置在源区和漏区上。 制造所述生物传感器的方法包括：制备所述硅板的步骤; 在硅板上形成源区和漏区的步骤; 将硅纳米线布置在源极区域和漏极区域上的步骤; 以及在硅纳米线的一个区域中照射电子束以形成缺陷区域的步骤。
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公开(公告)号：KR1020090062373A
公开(公告)日：2009-06-17
申请号：KR1020070129581
申请日：2007-12-13
Applicant: 한국전자통신연구원
IPC: H01L21/336 , H01L29/78
CPC classification number: G01N27/4145 , H01L29/66818 , H01L29/7853
Abstract: A high sensitive sensor and a manufacturing method thereof are provided to obtain a high signal by controlling depletion and accumulation of a channel by combining a target material and a sensing material in both sides. An SOI(Silicon On Insulator) substrate is formed in an upper part of a semiconductor substrate. A mask pattern is formed by performing a lithography process in the upper part of the SOI substrate. The structure of a pin shape is formed by etching a silicon layer in the upper part of the SOI substrate. The sensor structure with a pin shaped structure is formed on the semiconductor substrate. A metal electrode is deposited by implanting the ion for electrical ohmic contact to the sensor structure. A sensing material combined in a target material is fixed in both sidewalls of the pin shaped structure. The path for penetrating the target material through the pin-shaped structure is formed on the sensor structure.
Abstract translation: 提供了一种高灵敏度传感器及其制造方法，以通过在两侧组合目标材料和感测材料来控制通道的耗尽和累积来获得高信号。 在半导体衬底的上部形成SOI（绝缘体上硅）衬底。 通过在SOI衬底的上部进行光刻工艺来形成掩模图案。 针状结构通过在SOI衬底的上部蚀刻硅层而形成。 具有针状结构的传感器结构形成在半导体衬底上。 通过将用于电欧姆接触的离子注入传感器结构来沉积金属电极。 组合在目标材料中的感测材料固定在销形结构的两个侧壁中。 在传感器结构上形成穿过针状结构穿透目标材料的路径。
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公开(公告)号：KR1020090058883A
公开(公告)日：2009-06-10
申请号：KR1020070125679
申请日：2007-12-05
Applicant: 한국전자통신연구원
CPC classification number: H01L29/0665 , B82Y10/00 , B82Y15/00 , H01L29/0673 , H01L29/78696
Abstract: A semiconductor nano wire sensor and a manufacturing method thereof are provided to implement a silicon nano wire channel of a line width with several nano meters by using a photolithographic process. A first conductive single crystal silicon line pattern is formed in the uppermost layer of an SOI(Silicon On Insulator) substrate. A second conductive channel(216b) is formed in both ends of the line width direction of the first conductive single crystal silicon line pattern. The second conductive pad is formed in both sides of the longitudinal direction of the first conductive single crystal silicon line pattern. A first electrode(242) for applying a reverse bias voltage is formed in an undoped region of the first conductive single crystal silicon line pattern. A second electrode(232) for applying the bias voltage to both sides of the second conductive channel is formed on the second conductive pad.
Abstract translation: 提供半导体纳米线传感器及其制造方法，通过使用光刻工艺来实现具有数纳米的线宽的硅纳米线通道。 在SOI（绝缘体上硅）衬底的最上层形成第一导电单晶硅线图形。 第二导电沟道（216b）形成在第一导电单晶硅线图案的线宽方向的两端。 第二导电焊盘形成在第一导电单晶硅线图案的纵向方向的两侧。 在第一导电单晶硅线图案的未掺杂区域中形成用于施加反向偏置电压的第一电极（242）。 在第二导电焊盘上形成用于将偏置电压施加到第二导电沟道两侧的第二电极（232）。
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