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    Lithography apparatus for obtaining imaging on surface side or rear surface side of substrate, substrate identification method, device manufacturing method, substrate, and computer program
    3.
    发明专利
    Lithography apparatus for obtaining imaging on surface side or rear surface side of substrate, substrate identification method, device manufacturing method, substrate, and computer program 有权
    用于在基板的表面侧或后表面上形成图像的基板设备，基板识别方法，设备制造方法，基板和计算机程序

    公开(公告)号：JP2005252281A

    公开(公告)日：2005-09-15

    申请号：JP2005099664

    申请日：2005-03-02

    Applicant: Asml Netherlands Bv ,  エイエスエムエル ネザランドズ ベスローテン フエンノートシャップ

    Inventor： VAN DER VEEN MICHAEL ,  DE MOL CHRISTIANUS GERARDUS MA ,  VAN BUEL HENRICUS WILHELMUS MA ,  KLINKHAMER JACOB FREDERIK FRIS ,  BRUINSMA ANASTASIUS JACOBUS AN ,  LEENDERS MARTINUS HENDRIKUS AN ,  HUBERT ADRIAAN VAN MIERLO

    IPC: G03F7/20 ,  G03B27/42 ,  G03F9/00 ,  H01L21/027

    CPC classification number: G03F9/7084 ,  G03F7/70425 ,  G03F9/7011 ,  G03F9/7019 ,  G03F9/7076

    Abstract: PROBLEM TO BE SOLVED: To provide a method and an apparatus that do not take much time in substrate scanning for substrate lineup and substrate identification to be performed for application treatment selection, and that do not require extra space on a substrate to attach an identification code in the case where a multiple lithography apparatus is used for multilayer IC production. SOLUTION: The positions of a lineup mark P1 and a reference mark P2 on a substrate W, or those of two markers of a circuit form are measured by a sensor MS, and the distance between the two is calculated by an identification unit IU. Then, comparison is made between the calculated values and the predetermined values stored in MEM1 and MEM2 to identify the substrate. Otherwise, a treatment process applied to this substrate is decided, or the lineup values of this system is automatically adjusted, and so on. As the sensor MS can read both sides of the substrate W, these markers can be arranged either on the frontal side or rear side of the substrate W, and the markers can be arranged on a scribe lane as well. In this way, the effective area of the substrate for IC production is not reduced. COPYRIGHT: (C)2005,JPO&NCIPI

    Abstract translation: 要解决的问题：提供一种方法和装置，其不需要花费太多时间在基片扫描中进行基片阵列和基片识别，以进行应用处理选择，并且不需要在基片上附加额外的空间 在将多光刻设备用于多层IC制造的情况下的识别码。 解决方案：通过传感器MS测量衬底W上的阵列标记P1和参考标记P2的位置或电路形式的两个标记的位置，并且通过识别单元计算两者之间的距离 IU。 然后，将所计算的值和存储在MEM1和MEM2中的预定值进行比较，以识别衬底。 否则，决定应用于该基板的处理过程，或者自动调整该系统的阵容值等。 由于传感器MS可以读取基板W的两侧，所以这些标记可以布置在基板W的正面侧或背面上，标记也可以布置在划线上。 以这种方式，IC生产用基板的有效面积不降低。 版权所有（C）2005，JPO＆NCIPI

    Method for characterizing similarity between measurement values of entity, computer program, and data carrier
    5.
    发明专利
    Method for characterizing similarity between measurement values of entity, computer program, and data carrier 有权
    表征实体，计算机程序和数据载体的测量值之间的相似性的方法

    公开(公告)号：JP2009135425A

    公开(公告)日：2009-06-18

    申请号：JP2008238306

    申请日：2008-09-17

    Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

    Inventor： DE MOL CHRISTIANUS GERARDUS MA ,  REUHMAN-HUISKEN MARIA ELISABET

    IPC: H01L21/027 ,  G03F9/00

    CPC classification number: G03F9/7003 ,  G03F9/7034

    Abstract: PROBLEM TO BE SOLVED: To provide a method for efficiently characterizing similarity between measurement values of a plurality of entities.
    SOLUTION: The method for characterizing similarity between the measurement values of a plurality of entities including the first entity and the second entity includes a step for receiving measurement values taken at a plurality of measurement points in each entity. A model provided with a probability process, a set of parameters and a model function having values depending on the measurement points is defined. Then a set (β) of parameters is estimated by fitting the model function to the measurement values. In a succeeding step, residual data are determined at least on a part of the plurality of measurement points for the first entity and the second entity by subtracting the fitted function from the measurement values. Then, a correlation coefficient of the first entity (i') and the second entity (i") is estimated based on the determined residual data and the estimated correlation coefficient is used to characterize the similarity between the measurement values. In the method, the model is defined so that the residual data are expected to have a deterministic component for controlling an estimation value of the correlation coefficient depending on the measurement points. The correlation coefficient is estimated by using an estimation value of an entity average residual averaged by the measurement points of the first entity and an estimation value of an entity average residual averaged by the measurement points of the second entity.
    COPYRIGHT: (C)2009,JPO&INPIT

    Abstract translation: 要解决的问题：提供一种用于有效地表征多个实体的测量值之间的相似性的方法。 解决方案：用于表征包括第一实体和第二实体的多个实体的测量值之间的相似度的方法包括用于接收在每个实体中的多个测量点处获取的测量值的步骤。 定义了具有概率过程，一组参数和具有取决于测量点的值的模型函数的模型。 然后通过将模型函数拟合到测量值来估计参数的集合（β）。 在接下来的步骤中，通过从测量值中减去拟合函数，至少在第一实体和第二实体的多个测量点的一部分上确定残差数据。 然后，基于所确定的残差数据来估计第一实体（i'）和第二实体（i“）的相关系数，并且使用估计的相关系数来表征测量值之间的相似度，在该方法中， 模型被定义为使得残差数据被期望具有用于根据测量点来控制相关系数的估计值的确定性分量，通过使用由测量点平均的实体平均残差的估计值来估计相关系数 的第一个实体的平均估计值和由第二个实体的测量点平均的实体平均残差的估计值。版权所有：（C）2009，JPO＆INPIT

    Method for characterizing process step and device manufacturing method
    6.
    发明专利
    Method for characterizing process step and device manufacturing method 有权
    用于表征工艺步骤和装置制造方法的方法

    公开(公告)号：JP2008211233A

    公开(公告)日：2008-09-11

    申请号：JP2008104954

    申请日：2008-04-14

    Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

    Inventor： REUHMAN-HUISKEN MARIA ELISABET ,  DE MOL CHRISTIANUS GERARDUS MA ,  TOLSMA HOITE PIETER THEODOOR

    IPC: G03F9/00 ,  H01L21/027 ,  G03F7/20

    CPC classification number: G03F7/70616 ,  G03F7/70633 ,  G03F9/7003

    Abstract: PROBLEM TO BE SOLVED: To provide a device manufacturing method that improves the yield.
    SOLUTION: Deformation of a substrate wafer is measured by comparing positions of a plurality of reference marks with values of a data base after their exposure and process step. For taking into consideration the measured deformation and the compared results in step S1, the development step of an exposure and development step S2 is controlled using the feedforward loop. Then, a position alignment measurement step S3 is performed, in which the alignment relationship between the continuing two layers deposited on the substrate W during consecutive cycles is measured. If the positional control of a latest layer with respect to its preceding layer is insufficient, the latest layer is removed and a new layer is deposited.
    COPYRIGHT: (C)2008,JPO&INPIT

    Abstract translation: 要解决的问题：提供提高产量的装置制造方法。 解决方案：通过将多个参考标记的位置与其曝光和处理步骤之后的数据库的值相比较来测量衬底晶片的变形。 为了在步骤S1中考虑测量的变形和比较结果，使用前馈回路来控制曝光和显影步骤S2的显影步骤。 然后，进行位置对准测量步骤S3，其中测量在连续循环期间沉积在基板W上的连续两层之间的对准关系。 如果相对于其前一层的最新层的位置控制不足，则移除最新层并且存储新层。 版权所有（C）2008，JPO＆INPIT

    8.
    发明专利
    未知

    公开(公告)号：DE602006000256D1

    公开(公告)日：2008-01-03

    申请号：DE602006000256

    申请日：2006-05-30

    Applicant: ASML NETHERLANDS BV

    Inventor： DE MOL CHRISTIANUS GERARDUS MA

    IPC: G03F7/20

    Abstract: A system in which deformation of a substrate wafer is monitored during processing of the wafer is disclosed. In one embodiment, the distortion in the substrate wafer is measured after each exposure and processing operation by comparing the position of a plurality of reference marks to values in a database.

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