公开(公告)号：EP1554915A4

公开(公告)日：2008-08-20

申请号：EP03726799

申请日：2003-05-13

Applicant: IBM

Inventor： HOUGHAM GARETH G ,  FOGEL KEITH E ,  LAURO PAUL A ,  ZINTER JOSEPH

IPC: H01R13/24 ,  H01R43/00 ,  H05K3/40 ,  H05K3/42 ,  H05K7/10

CPC classification number: H01R13/2414 ,  H01R12/7082 ,  H01R12/714 ,  H01R43/007 ,  H05K3/4007 ,  H05K3/42 ,  H05K7/1061 ,  H05K2201/0133 ,  H05K2201/0367 ,  H05K2201/0959 ,  H05K2201/10378 ,  Y10S439/931 ,  Y10T442/109 ,  Y10T442/172

Abstract: Methods for fabricating Land Grid Array (LGA) interposer contacts that are both conducting and elastic.Also provided are LGA interposer contacts as produced by the inventive methods. Provided is LGA type which utilizes a pure unfilled elastomer button core that is covered with an electrically-conductive material that is continuous from the top surface to the bottom surface of the button structure. In order to obviate the disadvantages and drawbacks which are presently encountered in the technology pertaining to the fabrication and structure of land grid arrays using electrically-conductive interposer contacts, there isprovided both methods and structure for molding elastomer buttons into premetallized LGA carrier sheets,and wherein the non-conductive elastomer buttons are surface-metallized in order to convert them intoconductive electrical contacts.

公开(公告)号：JP2005150750A

公开(公告)日：2005-06-09

申请号：JP2004332214

申请日：2004-11-16

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： HOUGHAM GARETH G ,  FOGEL KEITH E ,  ROSNER JOANNA ,  LAURO PAUL A ,  GOMA SHERIF ,  ZINTER JOSEPH JR

IPC: H01L23/32 ,  H01L23/48 ,  H01L23/498 ,  H01R12/00 ,  H05K3/32 ,  H05K3/40 ,  H05K3/42 ,  H05K7/10

CPC classification number: H05K7/1069 ,  H01L23/49827 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01R12/52 ,  H05K3/326 ,  H05K3/4092 ,  H05K3/42 ,  H05K2201/10378 ,  H05K2203/308 ,  Y10T29/49147 ,  Y10T29/49151 ,  Y10T29/49155 ,  Y10T29/49156 ,  Y10T29/49204 ,  Y10T29/49222 ,  H01L2924/00

Abstract: PROBLEM TO BE SOLVED: To provide an interposer having one or more hollow electrical contact buttons arranged in a carrier. SOLUTION: The interposer 102 is formed by arranging a sacrificial post in the via of the carrier. The electrical contact button 120 is formed on the surface of the sacrificial post by the metal covering process for covering metal in a desired pattern using a mask. The sacrificial post is made of a material that thermally decomposes with heat of such a degree that the carrier 124 and the electrical contact button 120 do not change. COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提供具有布置在载体中的一个或多个中空电触点按钮的插入器。 解决方案：通过在载体的通路中布置牺牲柱来形成插入件102。 电接触按钮120通过金属覆盖工艺在牺牲柱的表面上形成，用于使用掩模以期望的图案覆盖金属。 牺牲柱由以热量分解的材料制成，使得载体124和电接触按钮120不改变。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：WO2011102929A3

公开(公告)日：2012-02-02

申请号：PCT/US2011021626

申请日：2011-01-19

Applicant: IBM ,  GRUBER PETER A ,  LAURO PAUL A ,  NAH JAE-WOONG

Inventor： GRUBER PETER A ,  LAURO PAUL A ,  NAH JAE-WOONG

IPC: H01L21/3205

CPC classification number: H05K3/3452 ,  H01L21/4853 ,  H01L23/3157 ,  H01L23/49811 ,  H01L23/49816 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/742 ,  H01L2224/0401 ,  H01L2224/05647 ,  H01L2224/10145 ,  H01L2224/1131 ,  H01L2224/11472 ,  H01L2224/1148 ,  H01L2224/11849 ,  H01L2224/13021 ,  H01L2224/13022 ,  H01L2224/131 ,  H01L2224/1403 ,  H01L2224/742 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/01042 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01087 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/14 ,  H05K3/3468 ,  H05K2201/09036 ,  H05K2201/09827 ,  H05K2201/09845 ,  H05K2203/0126 ,  H05K2203/043 ,  H05K2203/0557 ,  H05K2203/0594 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A substrate comprising a plurality of wet-able pads formed on a surface of the substrate; and a solder resist layer deposited on the surface of the substrate is obtained. At least the solder resist layer is formed with recessed regions defining volumes adjacent the wet- able pads. Molten solder is directly injected into the volumes adjacent the wet-able pads, such that the volumes adjacent the wet-able pads are filled with solder and the solder solidifies forming a plurality of solder structures adhered to the wet-able pads. The substrate and the solder are re-heated after the solidification, to re-flow the solder into generally spherical balls extending above the outer surface of the solder resist layer. In an alternative approach, solder injection and solidification are carried out in a nitrogen environment or a forming gas environment, and the reflow step may be omitted.

Abstract translation: 一种衬底，包括形成在所述衬底的表面上的多个可湿性焊盘; 并且获得沉积在基板表面上的阻焊层。 至少阻焊层形成有限定与湿润垫相邻的体积的凹陷区域。 将熔融的焊料直接注入到与可湿性焊盘相邻的体积中，使得与可湿性焊盘相邻的体积被焊料填充，并且焊料固化形成粘附到湿润焊盘的多个焊料结构。 在固化之后，将基板和焊料重新加热，以将焊料重新流入延伸到阻焊层的外表面之上的大致球形的球体。 在替代方法中，焊料注入和凝固在氮气环境或形成气体环境中进行，并且可以省略回流步骤。

公开(公告)号：WO2013181117A3

公开(公告)日：2014-04-03

申请号：PCT/US2013042772

申请日：2013-05-24

Applicant: IBM

Inventor： BEDELL STEPHEN W ,  FOGEL KEITH E ,  HEKMATSHOARTABARI BAHMAN ,  LAURO PAUL A ,  LI NING ,  SADANA DEVENDRA K ,  SHAHIDI GHAVAM G ,  SHAHRJERDI DAVOOD

IPC: H01L31/18

CPC classification number: H01L31/0684 ,  H01L21/02002 ,  H01L31/1896 ,  Y02E10/547

Abstract: A stressor layer used in a controlled spalling method is removed through the use of a cleave layer that can be fractured or dissolved. The cleave layer is formed between a host semiconductor substrate and the metal stressor layer. A controlled spalling process separates a relatively thin residual host substrate layer from the host substrate. Following attachment of a handle substrate to the residual substrate layer or other layers subsequently formed thereon, the cleave layer is dissolved or otherwise compromised to facilitate removal of the stressor layer. Such removal allows the fabrication of a bifacial solar cell.

Abstract translation: 以受控剥落方式使用的应力层通过使用可以断裂或溶解的裂开层去除。 在主体半导体衬底和金属应力层之间形成切割层。 受控的剥落过程将相对薄的残余主体衬底层与主体衬底分离。 在将手柄衬底附接到残留衬底层或随后在其上形成的其它层之后，解理层被溶解或以其他方式受到损害以便于去除应力层。 这种去除允许制造双面太阳能电池。

公开(公告)号：WO2011106203A3

公开(公告)日：2011-11-17

申请号：PCT/US2011024948

申请日：2011-02-16

Applicant: IBM ,  BEDELL STEPHEN W ,  FOGEL KEITH E ,  LAURO PAUL A ,  SADANA DEVENDRA ,  SHAHRJERDI DAVOOD

Inventor： BEDELL STEPHEN W ,  FOGEL KEITH E ,  LAURO PAUL A ,  SADANA DEVENDRA ,  SHAHRJERDI DAVOOD

IPC: H01L21/304 ,  B28D5/00

CPC classification number: H01L31/075 ,  H01L21/02002 ,  H01L31/0725 ,  H01L31/074 ,  H01L31/076 ,  H01L31/184 ,  H01L31/1892 ,  Y02E10/548

Abstract: A method for spalling a layer from an ingot of a semiconductor substrate includes forming a metal layer on the ingot of the semiconductor substrate, wherein a tensile stress in the metal layer is configured to cause a fracture in the ingot; and removing the layer from the ingot at the fracture. A system for spalling a layer from an ingot of a semiconductor substrate includes a metal layer formed on the ingot of the semiconductor substrate, wherein a tensile stress in the metal layer is configured to cause a fracture in the ingot, and wherein the layer is configured to be removed from the ingot at the fracture.

Abstract translation: 一种用于从半导体衬底的晶锭剥落层的方法包括：在半导体衬底的晶块上形成金属层，其中金属层中的拉伸应力被配置为引起晶块中的断裂; 并在裂缝处从锭块中去除层。 用于从半导体衬底的晶锭剥落层的系统包括形成在半导体衬底的晶锭上的金属层，其中金属层中的拉应力被配置为引起晶块中的断裂，并且其中该层被配置 在骨折处从锭块中移出。

公开(公告)号：DE102012209708B4

公开(公告)日：2016-03-31

申请号：DE102012209708

申请日：2012-06-11

Applicant: IBM

Inventor： BEDELL STEPHEN W ,  FOGEL KEITH E ,  LAURO PAUL A ,  SADANA DEVENDRA K

IPC: H01L21/304 ,  H01L31/18

Abstract: Verfahren zur gesteuerten Schichtübertragung, das folgende Schritte umfasst: Bereitstellen einer Zugspannungsschicht auf einem Basissubstrat mit einer oberen Oberfläche und einer unteren Oberfläche und Seitenwandrändern, wobei die Zugspannungsschicht einen Zugspannungsschichtteil, der oberhalb einer oberen Oberfläche des Basissubstrats angeordnet ist, und einen selbsthaftenden Zugspannungsschichtteil aufweist, der vertikal an den Seitenwandrändern des Basissubstrats anliegt; Aufbringen eines Abspalthemmers oberhalb des Zugspannungsschichtteils der Zugspannungsschicht; Trennen des selbsthaftenden Zugspannungsschichtteils der Zugspannungsschicht von dem Zugspannungsschichtteil; Abspalten eines Teils des Basissubstrats unterhalb des Zugspannungsschichtteils, wobei das Abspalten das Verschieben des Abspalthemmers über die Oberseite des Zugspannungsschichtteils beinhaltet; und Entfernen des Zugspannungsschichtteils von der Oberseite eines abgespaltenen Teils des Basissubstrats.

公开(公告)号：GB2491739B

公开(公告)日：2014-09-03

申请号：GB201214867

申请日：2011-01-19

Applicant: IBM

Inventor： GRUBER PETER ,  LAURO PAUL A ,  NAH JAE-WOONG

IPC: H01L21/48

公开(公告)号：DE102012209706A1

公开(公告)日：2012-12-20

申请号：DE102012209706

申请日：2012-06-11

Applicant: IBM

Inventor： BEDELL STEPHEN W ,  FOGEL KEITH E ,  LAURO PAUL A ,  SADANA DEVENDRA K ,  SHAHRJERDI DAVOOD

IPC: H01L21/78 ,  H01L21/301 ,  H01L21/304

Abstract: Die vorliegende Offenbarung stellt ein Verfahren bereit, um zwei Bauelement-Wafer aus einem einzelnen Basissubstrat zu bilden. Bei diesem Verfahren wird zunächst eine Struktur bereitgestellt, umfassend ein Basissubstrat mit auf oder innerhalb einer obersten Oberfläche und einer untersten Oberfläche des Basissubstrats aufgebrachten Bauelementschichten. Das Basissubstrat kann doppelseitig polierte Oberflächen aufweisen. Die Struktur mit den Bauelementschichten wird innerhalb eines bestimmten Bereichs des Basissubstrats gespalten, der zwischen den Bauelementschichten liegt. Durch das Spalten entsteht ein erster Bauelement-Wafer mit einem Teil des Basissubstrats und einer der Bauelementschichten, sowie ein zweiter Bauelement-Wafer mit einem anderen Teil des Basissubstrats und der anderen Bauelementschicht.

公开(公告)号：GB2490606A

公开(公告)日：2012-11-07

申请号：GB201208994

申请日：2011-02-16

Applicant: IBM

Inventor： BEDELL STEPHEN W ,  FOGEL KEITH E ,  LAURO PAUL A ,  SADANA DEVENDRA ,  SHAHRJERDI DAVOOD

IPC: H01L21/02 ,  H01L31/18

Abstract: A method for spalling a layer from an ingot of a semiconductor substrate includes forming a metal layer on the ingot of the semiconductor substrate, wherein a tensile stress in the metal layer is configured to cause a fracture in the ingot; and removing the layer from the ingot at the fracture. A system for spalling a layer from an ingot of a semiconductor substrate includes a metal layer formed on the ingot of the semiconductor substrate, wherein a tensile stress in the metal layer is configured to cause a fracture in the ingot, and wherein the layer is configured to be removed from the ingot at the fracture.

公开(公告)号：DE102012210227A8

公开(公告)日：2013-03-07

申请号：DE102012210227

申请日：2012-06-18

Applicant: IBM

Inventor： BEDELL STEPHEN W ,  FOGEL KEITH E ,  LAURO PAUL A ,  SADANA DEVENDRA K ,  SHAHRJERDI DAVOOD ,  CORTES NORMA EDITH SOSA

IPC: H01L21/304