公开(公告)号：US20070152151A1

公开(公告)日：2007-07-05

申请号：US11323405

申请日：2005-12-29

Applicant: Michael Schmidt ,  Tracy Myers

Inventor： Michael Schmidt ,  Tracy Myers

IPC: H01J37/28 ,  G01N23/225

CPC classification number: G01N23/225 ,  G01N1/32 ,  H01J2237/2802 ,  H01J2237/2803 ,  H01J2237/31745 ,  H01L22/24

Abstract: A method and sample for radiation microscopy include a sample source that includes an area of interest, an outer side of a sample formed in the sample source adjacent to the area of interest, an inner side of the sample formed inside the sample source wherein at least a portion of the area of interest is included between the inner side of the sample and the outer side, and a particle beam channel formed inside the sample source for conducting a particle beam to or from the inner side of the sample.

Abstract translation: 用于放射线显微镜的方法和样品包括包含感兴趣区域的样品源，在与源区域相邻的样品源中形成的样品的外侧，在样品源内部形成的样品的内侧，其中至少 感兴趣区域的一部分被包括在样品的内侧和外侧之间，并且形成在样品源内部的用于将粒子束传导到样品的内侧或从样品的内侧的粒子束通道。

公开(公告)号：US07183546B2

公开(公告)日：2007-02-27

申请号：US10942312

申请日：2004-09-16

Applicant: Eugene Thomas Bullock

Inventor： Eugene Thomas Bullock

IPC: G01N23/00 ,  G21K7/00

CPC classification number: H01J37/28 ,  G01R31/305 ,  H01J37/244 ,  H01J2237/2448 ,  H01J2237/24564 ,  H01J2237/2803 ,  H01J2237/30488 ,  H01L22/12

Abstract: System and a method for electrically testing a semiconductor wafer, the method including: (a) scanning a charged particle beam along at least one scan line while maintaining an electrode located at a vicinity of the wafer at a first voltage that differs from a voltage level of a first scanned portion of the wafer, and collecting charged particles scattered from the first scanned portion; (b) scanning a charged particle beam along at least one other scan line while maintaining the electrode at a second voltage that differs from a voltage level of a second scanned portion such as to control a charging state of at least an area that comprises the first and second scanned portions; and (c) repeating the scanning stages until a predefined section of the wafer is scanned.

Abstract translation: 系统和用于电测试半导体晶片的方法，所述方法包括：（a）沿着至少一条扫描线扫描带电粒子束，同时将位于晶片附近的电极保持在不同于电压电平的第一电压 并收集从第一扫描部分散射的带电粒子; （b）沿着至少一个其他扫描线扫描带电粒子束，同时将电极保持在不同于第二扫描部分的电压电平的第二电压，以便控制至少包括第一扫描部分的区域的充电状态 和第二扫描部分; 和（c）重复扫描阶段，直到扫描晶片的预定部分。

公开(公告)号：US5523567A

公开(公告)日：1996-06-04

申请号：US330458

申请日：1994-10-28

Applicant: Shigeru Kawamata ,  Susumu Ozasa

Inventor： Shigeru Kawamata ,  Susumu Ozasa

IPC: H01J37/22 ,  H01J37/28

CPC classification number: H01J37/28 ,  H01J2237/221 ,  H01J2237/2803

Abstract: In an electron microscope for observing an image of a sample using secondary electrons emitted from the sample by two-dimensionally scanning an electron beam on the sample, a low magnification and wide view image of the sample is formed on one frame memory. The frame memory for storing on picture of the image is divided into an appropriate number of areas. The image data of the sample, obtained by consecutively moving the sample to the sample areas, is stored to the corresponding areas of the frame memory.

Abstract translation: 在通过二次扫描样品上的电子束从样品发射的二次电子观察样品的图像的电子显微镜中，在一个帧存储器上形成样品的低倍率和宽视野图像。 用于存储图像的图像的帧存储器被划分为适当数量的区域。 通过将样本连续移动到采样区域获得的样本的图像数据被存储到帧存储器的对应区域。

公开(公告)号：US20190180979A1

公开(公告)日：2019-06-13

申请号：US16275775

申请日：2019-02-14

Applicant: Hitachi High-Technologies Corporation

Inventor： Toshiyuki YOKOSUKA ,  Chahn LEE ,  Hideyuki KAZUMI ,  Hajime KAWANO ,  Shahedul HOQUE ,  Kumiko SHIMIZU ,  Hiroyuki TAKAHASHI

IPC: H01J37/28 ,  H01J37/20 ,  H01J37/22 ,  H01J37/147

CPC classification number: H01J37/28 ,  H01J37/147 ,  H01J37/20 ,  H01J37/22 ,  H01J2237/2803 ,  H01J2237/2806 ,  H01J2237/2817 ,  H01J2237/2826 ,  H01J2237/3045

Abstract: The scanning charged particle beam microscope according to the present application is characterized in that, in acquiring an image of the FOV (field of view), interspaced beam irradiation points are set, and then, a deflector is controlled so that a charged particle beam scan is performed faster when the charged particle beam irradiates a position on the sample between each of the irradiation points than when the charged particle beam irradiates a position on the sample corresponding to each of the irradiation points (a position on the sample corresponding to each pixel detecting a signal). This allows the effects from a micro-domain electrification occurring within the FOV to be mitigated or controlled.

公开(公告)号：US20180330918A1

公开(公告)日：2018-11-15

申请号：US15974176

申请日：2018-05-08

Applicant: NANOWEAR INC.

Inventor： Vijay Varadan ,  Pratyush Rai ,  Gyanesh Mathur

IPC: H01J37/28 ,  H01J37/20 ,  G01Q60/42

CPC classification number: H01J37/28 ,  B82Y35/00 ,  G01Q30/02 ,  G01Q30/04 ,  G01Q60/30 ,  G01Q60/42 ,  H01J37/20 ,  H01J2237/2803 ,  H01J2237/2814

Abstract: A system and method is provided for of characterizing nanostructured surfaces. A nanostructure sample is placed in an SEM chamber and imaged. The system and method locates one of the nanostructures using images from the SEM imaging, excises a top portion of the nanostructure, places said top portion on a substrate such that the nanostructures are perpendicular to the substrate and a base of the top portion contacts the substrate, performs high energy ion beam assisted deposition of metal at the base to attach the top portion to the substrate, SEM imaging the top portions in the SEM chamber, determining coordinates of the top portions relative to the substrate from the SEM imaging of the top portions, placing the substrate in an AFM chamber, and performing AFM imaging of the top portions using the coordinates previously determined.

公开(公告)号：US20180330917A1

公开(公告)日：2018-11-15

申请号：US15972744

申请日：2018-05-07

Applicant: JEOL Ltd.

Inventor： Akira Abe

IPC: H01J37/28 ,  H01J37/147 ,  H01J37/22 ,  H01J37/252 ,  G01N23/225

CPC classification number: H01J37/28 ,  G01N23/225 ,  G06T7/11 ,  G06T7/136 ,  G06T2200/24 ,  G06T2207/10061 ,  G06T2207/20104 ,  H01J37/147 ,  H01J37/222 ,  H01J37/252 ,  H01J2237/225 ,  H01J2237/2803 ,  H01J2237/2807

Abstract: An electron microscope includes: a display control unit which sequentially acquires electron microscope images of a sample and causes a display unit to display the electron microscope images as a live image; an analysis area setting unit which sets an analysis area on the sample based on a designated position on the live image designated by pointing means; and an analysis control unit which performs control for executing elemental analysis of the set analysis area. The analysis area setting unit sets, as the analysis area, an area on the sample which corresponds to a continuous area including the designated position and having brightness comparable to brightness of the designated position.

公开(公告)号：US20180226221A1

公开(公告)日：2018-08-09

申请号：US15749900

申请日：2016-08-16

Applicant: Gerasimos Daniel DANILATOS

Inventor： Gerasimos Daniel DANILATOS

IPC: H01J37/28 ,  H01J37/147

CPC classification number: H01J37/28 ,  H01J37/1472 ,  H01J37/1474 ,  H01J37/20 ,  H01J2237/188 ,  H01J2237/2003 ,  H01J2237/2605 ,  H01J2237/2608 ,  H01J2237/2803 ,  H01J2237/2806 ,  H01J2237/2807 ,  H01J2237/2808 ,  H01J2237/2811

Abstract: Atmospheric scanning electron microscope achieves a wide field of view at low magnifications in a broad range of gaseous pressure, acceleration voltage and image resolution. This is based on the use of a reduced size pressure limiting aperture together with a scanning beam pivot point located at the small aperture at the end of electron optics column. A second aperture is located at the principal plane of the objective lens. Double deflection elements scan and rock the beam at a pivot point first at or near the principal plane of the lens while post-lens deflection means scan and rock the beam at a second pivot point at or near aperture at the end of the optics column. The aperture at the first pivot may act also as beam limiting aperture. In the alternative, with no beam limiting aperture at the principal plane, maximum amount of beam rays passes through the lens and with no post-lens deflection means, the beam is formed (limited) by a very small aperture at or near-and-below the final lens while the aperture skims a shifting portion of the wide beam, which is physically rocked with a pivot on the principal plane but with an apparent pivot point close and above the aperture, all of which result in a wide field of view on the examined specimen.

公开(公告)号：US09991092B2

公开(公告)日：2018-06-05

申请号：US13387183

申请日：2010-07-30

Applicant: Zhaohui Cheng ,  Hikaru Koyama ,  Yoshinobu Kimura ,  Hiroyuki Shinada ,  Osamu Komuro

Inventor： Zhaohui Cheng ,  Hikaru Koyama ,  Yoshinobu Kimura ,  Hiroyuki Shinada ,  Osamu Komuro

IPC: G01N23/00 ,  H01J37/28

CPC classification number: H01J37/28 ,  H01J2237/2803

Abstract: A scanning electron microscope of the present invention performs scanning by changing a scanning line density in accordance with a sample when an image of a scanned region is formed by scanning a two-dimensional region on the sample with an electron beam or is provided with a GUI having sample information input means which inputs information relating to the sample and display means which displays a recommended scanning conditioHn according to the input and performs scanning with a scanning line density according to the sample by selecting the recommended scanning condition. As a result, in observation using a scanning electron microscope, a suitable scanning device which can improve contrast of a profile of a two-dimensional pattern and suppress shading by suppressing the influence of charging caused by primary charged particle radiation and by improving a detection rate of secondary electrons and a scanning method are provided.

公开(公告)号：US09915628B2

公开(公告)日：2018-03-13

申请号：US15174260

申请日：2016-06-06

Applicant: TECHINSIGHTS INC.

Inventor： Christopher Pawlowicz ,  Alexander Sorkin ,  Michael W. Phaneuf ,  Alexander Krechmer ,  Ken G. Lagarec

IPC: G21G5/00 ,  G01N23/225 ,  H01J37/22 ,  H01L21/66 ,  G01R31/303

CPC classification number: G01N23/2255 ,  G01R31/303 ,  H01J37/222 ,  H01J2237/24564 ,  H01J2237/24585 ,  H01J2237/2803 ,  H01J2237/2809 ,  H01J2237/31749 ,  H01L22/12

Abstract: Methods and systems for tracing circuitry on integrated circuits using focused ion beam based imaging techniques. A first component or node on an integrated circuit is coupled to a second component or node on the same integrated circuit. After an external bias is applied to the first component or node, a focused ion beam is applied to the integrated circuit and an image is taken using an electron detector. The features or components on the integrated circuit which are coupled to the second component or node will show up in high contrast on the resulting image. The method may also involve applying a bias to a node or component and then using focused ion beam imaging techniques (through an electron detector) to arrive at an image of the integrated circuit. Components coupled to the node will appear in high contrast in the resulting image.

公开(公告)号：US09859097B2

公开(公告)日：2018-01-02

申请号：US15224167

申请日：2016-07-29

Applicant: The Board of Trustees of the Leland Stanford Junior University

Inventor： R. Fabian W. Pease ,  Manu Prakash ,  James Stanley Cybulski ,  Alireza Nojeh

IPC: H01J37/26 ,  H01J37/28

CPC classification number: H01J37/28 ,  H01J37/065 ,  H01J37/073 ,  H01J37/075 ,  H01J37/141 ,  H01J37/20 ,  H01J37/26 ,  H01J2237/061 ,  H01J2237/06308 ,  H01J2237/06333 ,  H01J2237/1035 ,  H01J2237/14 ,  H01J2237/164 ,  H01J2237/18 ,  H01J2237/20228 ,  H01J2237/2608 ,  H01J2237/262 ,  H01J2237/28 ,  H01J2237/2803

Abstract: A permanently sealed vacuum tube is used to provide the electrons for an electron microscope. This advantageously allows use of low vacuum at the sample, which greatly simplifies the overall design of the system. There are two main variations. In the first variation, imaging is provided by mechanically scanning the sample. In the second variation, imaging is provided by point projection. In both cases, the electron beam is fixed and does not need to be scanned during operation of the microscope. This also greatly simplifies the overall system.