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    Light emitting diode device and flip-chip packaged light emitting diode device
    11.
    发明授权
    Light emitting diode device and flip-chip packaged light emitting diode device 有权
    发光二极管器件和倒装芯片封装的发光二极管器件

    公开(公告)号：US09196797B2

    公开(公告)日：2015-11-24

    申请号：US13661272

    申请日：2012-10-26

    Applicant: GENESIS PHOTONICS INC.

    Inventor： Yu-Yun Lo ,  Yi-Ru Huang ,  Chih-Ling Wu ,  Tzu-Yang Lin ,  Yun-Li Li

    IPC: H01L33/44 ,  H01L33/40 ,  H01L33/46 ,  H01L33/42

    CPC classification number: H01L33/42 ,  H01L33/38 ,  H01L33/405 ,  H01L33/46 ,  H01L2224/14 ,  H01L2933/0016

    Abstract: The present invention relates to a light emitting diode (LED) and a flip-chip packaged LED device. The present invention provides an LED device. The LED device is flipped on and connected electrically with a packaging substrate and thus forming the flip-chip packaged LED device. The LED device mainly has an Ohmic-contact layer and a planarized buffer layer between a second-type doping layer and a reflection layer. The Ohmic-contact layer improves the Ohmic-contact characteristics between the second-type doping layer and the reflection layer without affecting the light emitting efficiency of the LED device and the flip-chip packaged LED device. The planarized buffer layer id disposed between the Ohmic-contact layer and the reflection layer for smoothening the Ohmic-contact layer and hence enabling the reflection layer to adhere to the planarized buffer layer smoothly. Thereby, the reflection layer can have the effect of mirror reflection and the scattering phenomenon on the reflected light can be reduced as well.

    Abstract translation: 本发明涉及发光二极管（LED）和倒装芯片封装的LED器件。 本发明提供一种LED装置。 LED装置被翻转并与封装基板电连接，从而形成倒装芯片封装的LED器件。 LED装置主要在第二种掺杂层和反射层之间具有欧姆接触层和平坦化缓冲层。 欧姆接触层改善了第二型掺杂层和反射层之间的欧姆接触特性，而不影响LED器件和倒装芯片封装的LED器件的发光效率。 设置在欧姆接触层和反射层之间的平坦化缓冲层id，用于使欧姆接触层平滑，从而使反射层平滑地粘附到平坦化缓冲层。 因此，反射层可以具有镜面反射的效果，并且也可以减小反射光上的散射现象。

    Light emitting diode and flip-chip light emitting diode package
    12.
    发明授权
    Light emitting diode and flip-chip light emitting diode package 有权
    发光二极管和倒装芯片的发光二极管封装

    公开(公告)号：US08829549B2

    公开(公告)日：2014-09-09

    申请号：US13687120

    申请日：2012-11-28

    Applicant: Genesis Photonics Inc.

    Inventor： Yi-Ru Huang ,  Chih-Ling Wu ,  Yu-Yun Lo ,  Po-Jen Su

    IPC: H01L33/00 ,  H01L33/60 ,  H01L33/20 ,  H01L33/44 ,  H01L33/64 ,  H01L33/38 ,  H01L33/62 ,  H01L33/40

    CPC classification number: H01L33/60 ,  H01L33/20 ,  H01L33/382 ,  H01L33/387 ,  H01L33/405 ,  H01L33/44 ,  H01L33/62 ,  H01L33/641 ,  H01L2224/16

    Abstract: A light emitting diode including a first doped layer, a light emitting layer, a second doped layer and a substrate is provided. A plurality of first grooves penetrate through the second doped layer and the light emitting layer. Thus, a partial surface of the first doped layer is exposed. At least one of the plurality of first grooves extends to edges of the second dope layer and the light emitting layer. An insulating layer is disposed over a part of second doped layer and extends to sidewalls of the first grooves. A first contact is set in the first grooves and electrically connected to the first doped layer. A second contact is set on the second doped layer and electrically connected to the second doped layer. By the first grooves, the first contact can be electrically connected to the first doped layer for improving current spreading.

    Abstract translation: 提供了包括第一掺杂层，发光层，第二掺杂层和衬底的发光二极管。 多个第一凹槽穿过第二掺杂层和发光层。 因此，暴露第一掺杂层的部分表面。 多个第一凹槽中的至少一个延伸到第二涂料层和发光层的边缘。 绝缘层设置在第二掺杂层的一部分上并延伸到第一凹槽的侧壁。 第一接触件设置在第一凹槽中并电连接至第一掺杂层。 第二接触设置在第二掺杂层上并电连接到第二掺杂层。 通过第一凹槽，第一接触可以电连接到第一掺杂层以改善电流扩展。

    LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREOF
    13.
    发明申请
    LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREOF 审中-公开

    公开(公告)号：US20200274027A1

    公开(公告)日：2020-08-27

    申请号：US16792312

    申请日：2020-02-17

    Applicant: Genesis Photonics Inc.

    Inventor： Yi-Ru Huang ,  Yu-Chen Kuo ,  Sheng-Tsung Hsu ,  Chih-Ming Shen ,  Yao-Tang Li ,  Tung-Lin Chuang ,  Tsung-Syun Huang ,  Jing-En Huang

    IPC: H01L33/10 ,  H01L33/64 ,  H01L33/40

    Abstract: A light emitting diode and manufacturing method thereof are provided. The light emitting diode includes a first-type semiconductor layer, a light emitting layer, a second-type semiconductor layer, a first metal layer, a first current conducting layer, a first bonding layer and a second current conducting layer. The light emitting layer is located between the first-type semiconductor layer and the second-type semiconductor layer. The first metal layer is located on and electrically connected to the first-type semiconductor layer. The first metal layer is located between the first current conducting layer and the first-type semiconductor layer. The first current conducting layer is located between the first bonding layer and the first metal layer. The first current conducting layer is connected to the first-type semiconductor layer by the first current conducting layer and the first metal layer. The first bonding layer has through holes overlapped with the first metal layer. The second current conducting layer is electrically connected to the second-type semiconductor layer.

    Micro light emitting diode and manufacturing method thereof
    14.
    发明授权
    Micro light emitting diode and manufacturing method thereof 有权

    公开(公告)号：US10580934B2

    公开(公告)日：2020-03-03

    申请号：US16195812

    申请日：2018-11-19

    Applicant: Genesis Photonics Inc.

    Inventor： Shao-Ying Ting ,  Yan-Ting Lan ,  Jing-En Huang ,  Yi-Ru Huang

    IPC: H01L33/08 ,  H01L25/075 ,  H01L27/15 ,  H01L33/00 ,  H01L33/20 ,  H01L33/38 ,  H01L33/44 ,  H01L33/62 ,  H01L33/06

    Abstract: A μLED including an epitaxial stacked layer, a first electrode and a second electrode is provided. The epitaxial stacked layer includes a first type doped semiconductor layer, a light emitting layer and a second type doped semiconductor layer. The epitaxial stacked layer has a first mesa portion and a second mesa portion to form a first type conductive region and a second type conductive region respectively. The first electrode is disposed on the first mesa portion. The second electrode is disposed on the second mesa portion. The second electrode contacts the first type doped semiconductor layer, the light emitting layer and the second type doped semiconductor layer located at the second mesa portion. Moreover, a manufacturing method of the μLED is also provided.

    Method of mass transferring electronic device
    18.
    发明授权
    Method of mass transferring electronic device 有权

    公开(公告)号：US10177113B2

    公开(公告)日：2019-01-08

    申请号：US15680225

    申请日：2017-08-18

    Applicant: Genesis Photonics Inc.

    Inventor： Shao-Ying Ting ,  Yan-Ting Lan ,  Jing-En Huang ,  Yi-Ru Huang

    IPC: H01L21/683 ,  H01L21/78 ,  H01L27/15 ,  H01L33/06 ,  H01L33/60 ,  H01L23/00 ,  H01L25/075 ,  H01L33/62

    Abstract: A method of mass transferring electronic devices includes following steps. A wafer is provided. The wafer includes a substrate and a plurality of electronic devices. The electronic devices are arranged in a matrix on a surface of the substrate. The wafer is attached to a temporary fixing film. The wafer is cut so that the wafer is divided into a plurality of blocks. Each of the blocks includes at least a part of the electronic devices and a sub-substrate. The temporary fixing film is stretched so that the blocks on the temporary fixing film are separated from each other as the temporary fixing film is stretched. At least a part of the blocks is selected as a predetermined bonding portion, and each of the blocks in the predetermined bonding portion is transferred to a carrying substrate in sequence, so that the electronic devices in the predetermined bonding portion arc bonded to the carrying substrate. The sub-substrates of the blocks are removed. Another method of mass transferring electronic devices is also provided.

    Light emitting diode with Bragg reflector
    19.
    发明授权
    Light emitting diode with Bragg reflector 有权

    公开(公告)号：US10038121B2

    公开(公告)日：2018-07-31

    申请号：US15045279

    申请日：2016-02-17

    Applicant: Genesis Photonics Inc.

    Inventor： Yi-Ru Huang ,  Tung-Lin Chuang ,  Yan-Ting Lan ,  Sheng-Tsung Hsu ,  Chih-Ming Shen ,  Jing-En Huang ,  Teng-Hsien Lai ,  Hung-Chuan Mai ,  Kuan-Chieh Huang ,  Shao-Ying Ting

    IPC: H01L33/46 ,  H01L33/38

    Abstract: A light emitting diode including a first-type semiconductor layer, an emitting layer, a second-type semiconductor layer, a first electrode, a second electrode, and a Bragg reflector structure. The emitting layer is configured to emit a light beam and is located between the first-type semiconductor layer and the second-type semiconductor layer. The light beam has a peak wavelength in a light emitting wavelength range. The first-type semiconductor layer, the emitting layer, and the second-type semiconductor layer are located on a same side of the Bragg reflector structure. A reflectance of the Bragg reflector structure is greater than or equal to 95% in a reflective wavelength range at least covering 0.8X nm to 1.8X nm, and X is the peak wavelength of the light emitting wavelength range.

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