公开(公告)号：US09343259B2

公开(公告)日：2016-05-17

申请号：US14815265

申请日：2015-07-31

Applicant: TEL Epion Inc.

Inventor： Matthew C. Gwinn ,  Avrum Freytsis ,  Robert K. Becker

IPC: H01J37/08 ,  H01J37/305

CPC classification number: H01J37/08 ,  H01J37/305 ,  H01J2237/006 ,  H01J2237/0206 ,  H01J2237/061 ,  H01J2237/0812 ,  H01J2237/0822 ,  H01J2237/3151

Abstract: A nozzle assembly used for performing gas cluster ion beam (GCIB) etch processing of various materials is described. In particular, the nozzle assembly includes two or more conical nozzles that are aligned such that they are both used to generate the same GCIB. The first conical nozzle may include the throat that initially forms the GCIB and the second nozzle may form a larger conical cavity that may be appended to the first conical nozzle. A transition region may be disposed between the two conical nozzles that may substantially cylindrical and slightly larger than the largest diameter of the first conical nozzle.

Abstract translation: 描述了用于进行各种材料的气体簇离子束（GCIB）蚀刻处理的喷嘴组件。 特别地，喷嘴组件包括两个或更多个锥形喷嘴，其被对准，使得它们都用于产生相同的GCIB。 第一锥形喷嘴可以包括最初形成GCIB的喉部，并且第二喷嘴可以形成可以附着到第一锥形喷嘴的更大的锥形空腔。 过渡区域可以设置在两个锥形喷嘴之间，其可以基本上圆柱形并稍微大于第一锥形喷嘴的最大直径。

公开(公告)号：US20160064174A1

公开(公告)日：2016-03-03

申请号：US14833447

申请日：2015-08-24

Applicant: NuFlare Technology, Inc.

Inventor： Nobuo MIYAMOTO

IPC: H01J29/02 ,  H01J29/48

CPC classification number: H01J29/025 ,  H01J3/027 ,  H01J3/38 ,  H01J29/02 ,  H01J29/485 ,  H01J29/92 ,  H01J29/96 ,  H01J37/065 ,  H01J2237/032 ,  H01J2237/038 ,  H01J2237/061 ,  H01J2237/31776

Abstract: An electron gun supporting member includes an insulating supporting member configured such that its one end is connected to a predetermined member having a ground potential and other end is connected to a high-voltage electrode to which a high potential being a negative high potential for emitting electrons from an electron source is applied, so as to support the high-voltage electrode, and a metal film formed in a partial region, which contacts neither the high-voltage electrode nor the predetermined member, on the outer surface of the insulating supporting member.

Abstract translation: 电子枪支撑构件包括绝缘支撑构件，其构造成使得其一端连接到具有接地电位的预定构件，并且另一端连接到高电压电极，高电位是用于发射电子的负高电位 施加电子源，以便在绝缘支撑构件的外表面上支撑高压电极和形成在部分区域中的金属膜，其也不与高压电极或预定构件接触。

公开(公告)号：US20160056016A1

公开(公告)日：2016-02-25

申请号：US14878206

申请日：2015-10-08

Applicant: CANON ANELVA CORPORATION

Inventor： Yasushi Yasumatsu ,  Naoyuki Okamoto ,  Masashi Tsujiyama ,  Fumihito Suzuki

IPC: H01J37/305 ,  H01J37/063 ,  B08B3/08 ,  H01J37/317

CPC classification number: H01J37/3053 ,  B08B3/08 ,  H01J27/024 ,  H01J37/063 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/022 ,  H01J2237/061 ,  H01J2237/0815 ,  H01J2237/083 ,  H01J2237/3151

Abstract: Provided is an ion beam processing apparatus including an ion generation chamber, a processing chamber, and electrodes to form an ion beam by extracting ions generated in the ion generation chamber to the processing chamber. The electrodes includes a first electrode disposed close to the ion generation chamber and provided with an ion passage hole to allow passage of the ions, and a second electrode disposed adjacent to the first electrode and closer to the processing chamber than the first electrode is, and provided with an ion passage hole to allow passage of the ions. The apparatus also includes a power unit which applies different electric potentials to the first electrode and the second electrode, respectively, so as to accelerate the ions generated by an ion generator in the ion generation chamber. A material of the first electrode is different from a material of the second electrode.

Abstract translation: 提供了一种离子束处理装置，其包括离子产生室，处理室和通过将在离子产生室中产生的离子提取到处理室来形成离子束的电极。 所述电极包括靠近所述离子产生室设置的第一电极，并设置有离子通道孔以允许所述离子通过，以及邻近所述第一电极设置并且比所述第一电极更靠近所述处理室设置的第二电极，以及 设置有允许离子通过的离子通道孔。 该装置还包括分别对第一电极和第二电极施加不同电位的功率单元，以便加速由离子产生室中的离子发生器产生的离子。 第一电极的材料与第二电极的材料不同。

公开(公告)号：US20160042909A1

公开(公告)日：2016-02-11

申请号：US14815265

申请日：2015-07-31

Applicant: TEL Epion Inc.

Inventor： Matthew C. Gwinn ,  Avrum Freytsis ,  Robert K. Becker

IPC: H01J37/08 ,  H01J37/305

CPC classification number: H01J37/08 ,  H01J37/305 ,  H01J2237/006 ,  H01J2237/0206 ,  H01J2237/061 ,  H01J2237/0812 ,  H01J2237/0822 ,  H01J2237/3151

Abstract: A nozzle assembly used for performing gas cluster ion beam (GCIB) etch processing of various materials is described. In particular, the nozzle assembly includes two or more conical nozzles that are aligned such that they are both used to generate the same GCIB. The first conical nozzle may include the throat that initially forms the GCIB and the second nozzle may form a larger conical cavity that may be appended to the first conical nozzle. A transition region may be disposed between the two conical nozzles that may substantially cylindrical and slightly larger than the largest diameter of the first conical nozzle.

Abstract translation: 描述了用于进行各种材料的气体簇离子束（GCIB）蚀刻处理的喷嘴组件。 特别地，喷嘴组件包括两个或更多个锥形喷嘴，其被对准，使得它们都用于产生相同的GCIB。 第一锥形喷嘴可以包括最初形成GCIB的喉部，并且第二喷嘴可以形成可以附着到第一锥形喷嘴的更大的锥形空腔。 过渡区域可以设置在两个锥形喷嘴之间，其可以基本上圆柱形并稍微大于第一锥形喷嘴的最大直径。

公开(公告)号：US09076626B2

公开(公告)日：2015-07-07

申请号：US14406012

申请日：2013-05-20

Applicant: The Welding Institute

Inventor： Colin Ribton ,  Allan Sanderson

IPC: H05H1/00 ,  H01J49/10 ,  H01J37/077 ,  H01J37/30

CPC classification number: H01J37/077 ,  H01J27/18 ,  H01J37/3002 ,  H01J2237/061 ,  H01J2237/063 ,  H01J2237/0817 ,  H01J2237/083 ,  H01J2237/31 ,  H01J2237/3104

Abstract: A plasma source apparatus for generating a beam of charged particles is disclosed. The apparatus comprises: a plasma chamber provided with an inlet for the ingress of gas and an aperture for the extraction of charged particles from the plasma chamber; a radio frequency (RF) plasma generation unit for generating a plasma inside the plasma chamber, the radio frequency plasma generation unit comprising first and second resonant circuits each tuned to resonate at substantially the same resonant frequency, the first resonant circuit comprising a first antenna and a first, RF power source adapted to drive the first resonant circuit at substantially its resonant frequency, and the second resonant circuit comprising a second antenna, whereby in use an RF signal is induced in the second antenna by the first resonant circuit due to resonant coupling, the second resonant circuit being configured to apply the induced RF signal to the plasma chamber to generate a plasma therein; and a particle accelerating unit for extracting charged particles from the plasma and accelerating the charged particles to form a beam, the particle accelerating unit comprising a second power source configured to apply potential between the plasma chamber and an accelerating electrode, the region between the plasma chamber and the accelerating electrode constituting an acceleration column. The second power source is adapted to output a high voltage relative to that output by the first, RF power source.

Abstract translation: 公开了一种用于产生带电粒子束的等离子体源装置。 该装置包括：等离子体室，其具有用于进入气体的入口和用于从等离子体室抽出带电粒子的孔; 用于在等离子体室内产生等离子体的射频（RF）等离子体产生单元，所述射频等离子体产生单元包括第一和第二谐振电路，每个谐振电路被调谐以基本相同的谐振频率谐振，所述第一谐振电路包括第一天线和 第一RF电源，其适于以基本上其谐振频率驱动第一谐振电路，并且第二谐振电路包括第二天线，由此在使用中由于谐振耦合由第一谐振电路在第二天线中感应RF信号 所述第二谐振电路被配置为将所述感应RF信号施加到所述等离子体室以在其中产生等离子体; 以及用于从等离子体中提取带电粒子并加速带电粒子以形成束的粒子加速单元，所述粒子加速单元包括构造成在等离子体室和加速电极之间施加电位的第二电源，等离子体室 加速电极构成加速柱。 第二电源适于通过第一RF电源输出相对于该输出的高电压。

公开(公告)号：US20150187541A1

公开(公告)日：2015-07-02

申请号：US14578525

申请日：2014-12-22

Applicant: MAPPER LITHOGRAPHY IP B.V

Inventor： Laura DINU-GÜRTLER ,  Eric Petrus HOGERVORST

IPC: H01J37/317 ,  H01J1/15 ,  H01J37/075

CPC classification number: H01J37/3174 ,  G03F7/70058 ,  H01J1/15 ,  H01J1/28 ,  H01J3/027 ,  H01J3/029 ,  H01J37/075 ,  H01J37/3177 ,  H01J2229/481 ,  H01J2237/061

Abstract: The invention relates to a cathode arrangement comprising: a thermionic cathode comprising an emission portion provided with an emission surface for emitting electrons, and a reservoir for holding a material, wherein the material, when heated, releases work function lowering particles that diffuse towards the emission portion and emanate at the emission surface at a first evaporation rate; a focusing electrode comprising a focusing surface for focusing the electrons emitted from the emission surface of the cathode; and an adjustable heat source configured for keeping the focusing surface at a temperature at which accumulation of work function lowering particles on the focusing surface is prevented.

Abstract translation: 本发明涉及一种阴极装置，其包括：热离子阴极，其包括具有用于发射电子的发射表面的发射部分和用于保持材料的储存器，其中所述材料在被加热时释放向发射扩散的功函数降低颗粒 以第一蒸发速率发射在发射表面; 聚焦电极，其包括用于聚焦从阴极的发射表面发射的电子的聚焦表面; 以及可调节热源，其被配置为将聚焦表面保持在防止在聚焦表面上降低颗粒的功函数积累的温度。

公开(公告)号：US20140319370A1

公开(公告)日：2014-10-30

申请号：US14328754

申请日：2014-07-11

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Hiroyasu SHICHI ,  Shinichi MATSUBARA ,  Norihide SAHO ,  Masahiro YAMAOKA ,  Noriaki ARAI

IPC: H01J27/02 ,  H01J37/26

CPC classification number: H01J27/26 ,  H01J27/022 ,  H01J37/023 ,  H01J37/067 ,  H01J37/08 ,  H01J37/26 ,  H01J37/28 ,  H01J2237/002 ,  H01J2237/006 ,  H01J2237/061 ,  H01J2237/0807 ,  H01J2237/2803

Abstract: An ion beam device according to the present invention includes a gas field ion source (1) including an emitter tip (21) supported by an emitter base mount (64), a ionization chamber (15) including an extraction electrode (24) and being configured to surround the emitter tip (21), and a gas supply tube (25). A center axis line of the extraction electrode (24) overlaps or is parallel to a center axis line (14A) of the ion irradiation light system, and a center axis line (66) passing the emitter tip (21) and the emitter base mount (64) is inclinable with respect to a center axis line of the ionization chamber (15). Accordingly, an ion beam device including a gas field ion source capable of adjusting the direction of the emitter tip is provided.

Abstract translation: 根据本发明的离子束装置包括气体离子源（1），其包括由发射极基座（64）支撑的发射极尖端（21），包括引出电极（24）的电离室（15） 构造成围绕发射器尖端（21），以及气体供应管（25）。 引出电极（24）的中心轴线与离​​子照射光系统的中心轴线（14A）重叠或平行，通过发射极尖端（21）和发射极基座 （64）相对于所述电离室（15）的中心轴线是可倾斜的。 因此，提供了包括能够调节发射极尖端的方向的气体场离子源的离子束装置。

公开(公告)号：US20140061816A1

公开(公告)日：2014-03-06

申请号：US14073565

申请日：2013-11-06

Applicant: SemEquip, Inc.

Inventor： Thomas N. Horsky ,  Dale C. Jacobson

IPC: H01L21/265 ,  H01L27/092 ,  H01L29/66 ,  H01L21/8238

CPC classification number: H01L21/26513 ,  H01J27/20 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/061 ,  H01J2237/082 ,  H01J2237/304 ,  H01L21/2658 ,  H01L21/3215 ,  H01L21/67213 ,  H01L21/823814 ,  H01L21/823842 ,  H01L27/092 ,  H01L29/66575

Abstract: A method of manufacturing a semiconductor device includes the steps of: providing a supply of molecules containing a plurality of dopant atoms into an ionization chamber, ionizing said molecules into dopant cluster ions, extracting and accelerating the dopant cluster ions with an electric field, selecting the desired cluster ions by mass analysis, modifying the final implant energy of the cluster ion through post-analysis ion optics, and implanting the dopant cluster ions into a semiconductor substrate. In general, dopant molecules contain n dopant atoms, where n is an integer number greater than 10. This method enables increasing the dopant dose rate to n times the implantation current with an equivalent per dopant atom energy of 1/n times the cluster implantation energy, while reducing the charge per dopant atom by the factor n.

Abstract translation: 一种制造半导体器件的方法包括以下步骤：向离子化室提供含有多个掺杂剂原子的分子，将所述分子电离成掺杂剂簇离子，用电场提取和加速掺杂剂簇离子，选择 通过质量分析获得所需的簇离子，通过后分析离子光学器件改变簇离子的最终注入能量，以及将掺杂剂簇离子注入到半导体衬底中。 通常，掺杂剂分子含有n个掺杂剂原子，其中n是大于10的整数。这种方法可以将掺杂剂剂量率增加到n次注入电流，每个掺杂剂原子能量的等效量为簇注入能量的1 / n倍 ，同时减少每个掺杂剂原子的电荷乘以因子n。

公开(公告)号：US08558192B2

公开(公告)日：2013-10-15

申请号：US13276836

申请日：2011-10-19

Applicant: Billy W. Ward ,  John Notte, IV ,  Randall G. Percival

Inventor： Billy W. Ward ,  John Notte, IV ,  Randall G. Percival

IPC: H01J37/08 ,  H01J37/28

CPC classification number: H01J37/28 ,  H01J37/08 ,  H01J2237/006 ,  H01J2237/038 ,  H01J2237/061 ,  H01J2237/0807

Abstract: Disclosed are systems and methods for applying a voltage gradient to a gas delivery system, delivering a gas through a length of the gas delivery system having the voltage gradient, the gas having a pressure-distance product of less than about 1×10−2 Torr-inches or greater than about 100 Torr-inches, and delivering the gas into a housing of an ion microscope, the housing including an emitter and an extractor.

Abstract translation: 公开了用于向气体输送系统施加电压梯度的系统和方法，将气体输送通过具有电压梯度的气体输送系统的一段长度，气体的压力距离乘积小于约1×10 -2乇 或大于约100托/英寸，并将气体输送到离子显微镜的壳体中，该壳体包括发射器和提取器。

公开(公告)号：US08530853B2

公开(公告)日：2013-09-10

申请号：US13369008

申请日：2012-02-08

Applicant: Adam V. Steele ,  Brenton J. Knuffman ,  Jabez J. McClelland

Inventor： Adam V. Steele ,  Brenton J. Knuffman ,  Jabez J. McClelland

IPC: H01J27/24

CPC classification number: H01J27/022 ,  G21K1/00 ,  H01J27/24 ,  H01J37/065 ,  H01J37/08 ,  H01J2237/061 ,  H01J2237/06333 ,  H01J2237/0815 ,  H05H3/02

Abstract: A system for producing a charged particle beam from a photoionized cold atom beam. A vapor of neutral atoms is generated. From these atoms, an atom beam having axial and transverse velocity distributions controlled by the application of laser light is produced. The produced atom beam is spatially compressed along each transverse axis, thus reducing the cross-sectional area of the produced beam and reducing a velocity spread of the produced beam along directions transverse to the beam's direction of propagation. Laser light is directed onto at least a portion of the neutral atoms in the atom beam, thereby producing ions and electrons. An electric field is generated at the location of the produced ions and electrons, thereby producing a beam of ions traveling in a first direction and electrons traveling in substantially the opposite direction. A vacuum chamber contains the atom beam, the ion beam and the electron beam.

Abstract translation: 用于从光电离冷原子束产生带电粒子束的系统。 产生中性原子的蒸汽。 由这些原子产生具有通过应用激光控制的轴向和横向速度分布的原子束。 所产生的原子束沿着每个横向轴线被空间压缩，从而减小所产生的光束的横截面面积，并且减小所产生的光束沿横向于光束传播方向的方向的速度扩展。 激光被引导到原子束中的至少一部分中性原子，从而产生离子和电子。 在产生的离子和电子的位置处产生电场，从而产生沿第一方向行进的离子束和基本上相反方向行进的电子。 真空室包含原子束，离子束和电子束。