公开(公告)号：US11898840B2

公开(公告)日：2024-02-13

申请号：US17356230

申请日：2021-06-23

Applicant: TOKYO ELECTRON LIMITED

Inventor： Shinji Kubota

IPC: G01B7/06 ,  H01J37/32

CPC classification number: G01B7/085 ,  H01J37/3222 ,  H01J37/32816

Abstract: A measuring device includes a substrate disposed on a substrate support of a plasma processing apparatus, a transmission circuit, a transmitting antenna, a receiving antenna, a reception demodulation circuit, and a calculator which are provided in the substrate. The transmission circuit generates a microwave. The transmitting antenna transmits the microwave generated by the transmission circuit as a transmission wave. The receiving antenna receives a reflected wave of the transmission wave by plasma above the substrate support as at least one reception wave. The reception demodulation circuit generates a signal that reflects a thickness of a sheath between the substrate and the plasma, from the reception wave. The calculator obtains the thickness of the sheath from the signal generated by the reception demodulation circuit.

公开(公告)号：US20240014072A1

公开(公告)日：2024-01-11

申请号：US18212352

申请日：2023-06-21

Applicant: Applied Materials, Inc.

Inventor： Tsung-Han YANG ,  Zhimin QI ,  Yongqian GAO ,  Rongjun WANG ,  Yi XU ,  Yu LEI ,  Xingyao GAO ,  Chih-Hsun HSU ,  Xi CEN ,  Wei LEI ,  Shiyu YUE ,  Aixi ZHANG ,  Kai WU ,  Xianmin TANG

IPC: H01L21/768 ,  H01J37/32

CPC classification number: H01L21/76879 ,  H01J37/32449 ,  H01J37/32816 ,  H01J37/32422 ,  H01J2237/2001 ,  H01J37/321 ,  H01J2237/332

Abstract: A method of forming a semiconductor device structure includes forming a nucleation layer within at least one feature. The method includes exposing the nucleation layer to a nitrogen plasma treatment. The nitrogen plasma treatment preferentially treats the top field and sidewalls while leaving the bottom surface substantially untreated to encourage bottom up metal growth.

公开(公告)号：US11869754B2

公开(公告)日：2024-01-09

申请号：US16563352

申请日：2019-09-06

Applicant: Applied Materials, Inc.

Inventor： Tina Dhekial-Phukan ,  Michael Nichols

IPC: H01J37/32 ,  H01L21/67 ,  C23C16/455 ,  C23C16/52

CPC classification number: H01J37/32816 ,  C23C16/45557 ,  C23C16/52 ,  H01J37/32449 ,  H01J37/32926 ,  H01J37/32981 ,  H01L21/67253

Abstract: System and methods of improving dynamic pressure response during recipe step transitions. An exemplary method may include changing at least one of a plurality of recipe parameters in accordance with a processing recipe while running the processing recipe on a semiconductor substrate in a processing chamber. The method may further include measuring a pressure response in the processing chamber responsive to the changing of the at least one of the plurality of recipe parameters, and determining a response error based on the pressure response and a model pressure response calculated based on the processing recipe. The method may further include, in response to determining that the response error may be greater than a threshold value, calculating an adjustment to an operation of a valve downstream of the processing chamber when changing the at least one of the plurality of recipe parameters in accordance with the processing recipe in subsequent runs.

公开(公告)号：US11837444B2

公开(公告)日：2023-12-05

申请号：US16347590

申请日：2017-11-06

Applicant: BONDTECH CO., LTD. ,  Tadatomo Suga

Inventor： Akira Yamauchi ,  Tadatomo Suga

IPC: H01J37/32

CPC classification number: H01J37/32449 ,  H01J37/32816 ,  H01J2237/201 ,  H01J2237/338 ,  H01J2237/3341

Abstract: The substrate joining method is a substrate joining method for joying two substrates, including a hydrophilic treatment step of hydrophilizing at least one of respective joint surfaces of the two substrates that are to be joined to each other and a joining step of joining the two substrates after the hydrophilic treatment step. The hydrophilic treatment step includes a step of performing a N2 RIE treatment to perform reactive ion etching using N2 gas on the joint surfaces of the substrates and a step of performing a N2 radical treatment to irradiate the joint surfaces of the substrates with N2 radicals after the step of performing the N2 RIE treatment.

公开(公告)号：US11772138B2

公开(公告)日：2023-10-03

申请号：US17883997

申请日：2022-08-09

Applicant: Tokyo Electron Limited

Inventor： Kazuya Dobashi ,  Chishio Koshimizu

IPC: H01L21/02 ,  B08B7/00 ,  B08B5/00 ,  H01J37/32 ,  H01L21/311 ,  H01L21/67

CPC classification number: B08B7/0035 ,  B08B5/00 ,  H01J37/321 ,  H01J37/3266 ,  H01J37/32449 ,  H01J37/32669 ,  H01J37/32816 ,  H01L21/02046 ,  H01L21/02057 ,  H01L21/31138 ,  H01L21/67034 ,  H01J37/32651 ,  H01J37/32834 ,  H01J2237/0473 ,  H01J2237/1825 ,  H01J2237/335

Abstract: A processing method includes: disposing a workpiece in a processing container of a processing apparatus, and maintaining an inside of the processing container in a vacuum state; providing a cluster nozzle in the processing container; supplying a cluster generating gas to the cluster nozzle and adiabatically expanding the cluster generating gas in the cluster nozzle, thereby generating gas clusters; generating plasma in the cluster nozzle to ionize the gas clusters and injecting the ionized gas clusters onto the workpiece; supplying a reactive gas to the cluster nozzle and exposing the reactive gas to the plasma such that the reactive gas becomes monomer ions or radicals; and supplying the monomer ions or radicals to the processing container, thereby exerting a chemical reaction on a substance present on a surface of the workpiece.

公开(公告)号：US20230298868A1

公开(公告)日：2023-09-21

申请号：US17898168

申请日：2022-08-29

Applicant: KIOXIA CORPORATION

Inventor： Yusuke KONDO

IPC: H01J37/32 ,  H01L21/311

CPC classification number: H01J37/32724 ,  H01J37/32449 ,  H01L21/31116 ,  H01J2237/002 ,  H01J2237/2007 ,  H01J2237/24585 ,  H01J2237/182 ,  H01J37/32816 ,  H01J2237/3341

Abstract: According to one embodiment, a plasma treatment apparatus includes a substrate holder that holds a semiconductor substrate, a gas supply unit that supplies a mixed gas to a gas supply space formed between the semiconductor substrate and the substrate holder, a flow rate adjustment unit that adjusts a flow rate of different gases in the mixed gas, and a flow rate control unit. The mixed gas contains, for example, helium and argon, and the flow rate control that controls the flow rate adjustment unit to change the relative flow rates of helium and argon, or the like, to control a temperature of the substrate.

公开(公告)号：US20230260759A1

公开(公告)日：2023-08-17

申请号：US18003139

申请日：2021-10-22

Applicant: Lam Research Corporation

Inventor： Eric A. Hudson ,  Andrew Clark Serino ,  Thad Nicholson ,  Ramesh Chandrasekharan ,  Alan M. Schoepp

IPC: H01J37/32 ,  C23C16/50 ,  C23C16/02 ,  C23C16/56 ,  C23C16/455

CPC classification number: H01J37/32449 ,  H01J37/32816 ,  H01J37/32458 ,  C23C16/50 ,  C23C16/0245 ,  C23C16/56 ,  C23C16/45565 ,  H01J2237/334 ,  H01J2237/2002 ,  H01J37/32357

Abstract: Various embodiments herein relate to methods and systems for integrating a vapor deposition process and an etch process in a single reactor. The vapor deposition process involves delivery of at least one deposition vapor in the absence of plasma. The etch process is a plasma etch process. Various features may be combined as desired to promote high quality deposition and etching results.

公开(公告)号：US20230245896A1

公开(公告)日：2023-08-03

申请号：US18003098

申请日：2021-07-21

Applicant: Lam Research Corporation

Inventor： Awnish Gupta ,  Bart J. Van Schravendijk ,  Frank Loren Pasquale ,  Adrien LaVoie ,  Jason Alexander Varnell ,  Praneeth Ramasagaram ,  Joseph R. Abel ,  Jennifer Leigh Petraglia ,  Dustin Zachary Austin

IPC: H01L21/311 ,  C23C16/56 ,  C23C16/04 ,  C23C16/06 ,  C23C16/34 ,  C23C16/40 ,  H01J37/32 ,  H01L21/02

CPC classification number: H01L21/31116 ,  C23C16/56 ,  C23C16/045 ,  C23C16/06 ,  C23C16/345 ,  C23C16/401 ,  H01J37/32449 ,  H01J37/32724 ,  H01J37/32816 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/0228 ,  H01L21/76831

Abstract: Methods and apparatuses for depositing dielectric films into features on semiconductor substrates are described herein. Methods involve depositing dielectric films by using controlled thermal chemical vapor deposition, with periodic passivation operations and densification to modulate film properties.

公开(公告)号：US20230230844A1

公开(公告)日：2023-07-20

申请号：US18121029

申请日：2023-03-14

Applicant: Tokyo Electron Limited

Inventor： Maju TOMURA ,  Yoshihide KIHARA ,  Masanobu HONDA

IPC: H01L21/311 ,  H01L21/3065 ,  H01J37/32

CPC classification number: H01L21/31116 ,  H01L21/3065 ,  H01L21/31144 ,  H01J37/32449 ,  H01J37/32816 ,  H01J37/32091 ,  H01J2237/3346

Abstract: A technique improves etch selectivity. An etching includes (a) providing, in a chamber, a substrate including an underlying film and a silicon-containing film on the underlying film, (b) etching the silicon-containing film to form a recess with first plasma generated from a first process gas containing a hydrogen fluoride gas until before the underlying film is exposed at the recess or until the underlying film is partly exposed at the recess, and (c) further etching the silicon-containing film at the recess under a condition different from a condition of (b).

公开(公告)号：US20230229133A1

公开(公告)日：2023-07-20

申请号：US18146505

申请日：2022-12-27

Applicant: TENGXI TECHNOLOGY CO. LTD.

Inventor： WEI-HAN LO ,  TIEN-HSIANG HO

IPC: G05B19/18 ,  H01L21/67 ,  H01J37/32 ,  G03F7/42

CPC classification number: G05B19/188 ,  H01L21/67225 ,  H01J37/32899 ,  H01J37/32082 ,  H01J37/32449 ,  G03F7/427 ,  H01J2237/20278 ,  H01J37/32816 ,  H01J2237/20214 ,  H01J2237/20235 ,  H01J2237/186 ,  H01J2237/002 ,  H01J37/32733 ,  G05B2219/45031

Abstract: A semiconductor machine system comprises a plurality of working chambers, wherein the working chambers process materials separately; a control host coupled to the plurality of working chambers, comprising: a main control module coupled to the plurality of working chambers; an analog control module coupled to the plurality of working chambers, and the analog control module is detachably coupled to one or more external devices by serial interface coupling; a digital control module coupled to the plurality of working chambers, and the main control module, the analog control module and the digital control module are coupled to each other; and a plurality of operating units coupled to at least one of the main control module, the analog control module and the digital control module, respectively, to control the plurality of working chambers for processing the materials by the main control module, the analog control module and the digital control module.