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    Electron microscope
    61.
    发明申请
    Electron microscope 有权
    电子显微镜

    公开(公告)号：US20070114403A1

    公开(公告)日：2007-05-24

    申请号：US11526847

    申请日：2006-09-25

    Applicant: Fumio Hosokawa

    Inventor： Fumio Hosokawa

    IPC: G21K7/00

    CPC classification number: H01J37/26 ,  H01J37/153 ,  H01J2237/2803 ,  H01J2237/2809

    Abstract: An electron microscope has a spherical aberration correction system having transfer optics inserted between a spherical aberration corrector and the objective lens. The transfer optics consists of first and second lenses each of which is made of a magnetic lens. Electrons passing across a point located at distance r0 from the optical axis are made to enter the first lens within the multipole element. Electrons are made to enter the second lens at distance r1 of the incident point to the objective lens from the optical axis. The ratio M (=r1/r0) is greater than 1.

    Abstract translation: 电子显微镜具有球面像差校正系统，其具有插入球面像差校正器和物镜之间的传输光学器件。 传输光学器件由第一和第二透镜组成，每个透镜由磁性透镜制成。 通过位于离开光轴的距离r 0的点的电子进入多极元件内的第一透镜。 使电子从光轴入射到物镜的入射点的距离r 1进入第二透镜。 比值M（= r 1 / r 0）大于1。

    Method and system for ultrafast photoelectron microscope
    62.
    发明授权
    Method and system for ultrafast photoelectron microscope 有权
    超快光电子显微镜的方法和系统

    公开(公告)号：US07154091B2

    公开(公告)日：2006-12-26

    申请号：US11097837

    申请日：2005-04-01

    Applicant: Ahmed Zewail ,  Vladimir Lobastov

    Inventor： Ahmed Zewail ,  Vladimir Lobastov

    IPC: H01J37/26 ,  G01N23/04

    CPC classification number: H01J37/26 ,  H01J37/065 ,  H01J37/073 ,  H01J37/24 ,  H01J37/243 ,  H01J37/265 ,  H01J2237/0432 ,  H01J2237/06333 ,  H01J2237/06341 ,  H01J2237/206 ,  H01J2237/2065 ,  H01J2237/24585 ,  H01J2237/2482 ,  H01J2237/2803 ,  H01J2237/2809 ,  H01J2237/2813 ,  H01J2237/2855

    Abstract: An ultrafast system (and methods) for characterizing one or more samples. The system includes a stage assembly, which has a sample to be characterized. The system has a laser source that is capable of emitting an optical pulse of less than 1 ps in duration. The system has a cathode coupled to the laser source. In a specific embodiment, the cathode is capable of emitting an electron pulse less than 1 ps in duration. The system has an electron lens assembly adapted to focus the electron pulse onto the sample disposed on the stage. The system has a detector adapted to capture one or more electrons passing through the sample. The one or more electrons passing through the sample is representative of the structure of the sample. The detector provides a signal (e.g., data signal) associated with the one or more electrons passing through the sample that represents the structure of the sample. The system has a processor coupled to the detector. The processor is adapted to process the data signal associated with the one or more electrons passing through the sample to output information associated with the structure of the sample. The system has an output device coupled to the processor. The output device is adapted to output the information associated with the structure of the sample.

    Abstract translation: 用于表征一个或多个样品的超快系统（和方法）。 该系统包括具有要表征的样品的载物台组件。 该系统具有能够发射持续时间小于1ps的光脉冲的激光源。 该系统具有耦合到激光源的阴极。 在具体实施例中，阴极能够发射持续时间小于1ps的电子脉冲。 该系统具有适于将电子脉冲聚焦到设置在载物台上的样品上的电子透镜组件。 该系统具有适于捕获穿过样品的一个或多个电子的检测器。 通过样品的一个或多个电子代表样品的结构。 检测器提供与通过样品的一个或多个电子相关联的信号（例如，数据信号），其表示样品的结构。 该系统具有耦合到检测器的处理器。 处理器适于处理与通过样本的一个或多个电子相关联的数据信号，以输出与样本的结构相关联的信息。 该系统具有耦合到处理器的输出设备。 输出设备适于输出与样本结构相关联的信息。

    System and method for voltage contrast analysis of a wafer
    63.
    发明申请
    System and method for voltage contrast analysis of a wafer 有权
    用于晶片电压对比分析的系统和方法

    公开(公告)号：US20060054816A1

    公开(公告)日：2006-03-16

    申请号：US10942312

    申请日：2004-09-16

    Applicant: Eugene Bullock

    Inventor： Eugene Bullock

    IPC: H01J37/28

    CPC classification number: H01J37/28 ,  G01R31/305 ,  H01J37/244 ,  H01J2237/2448 ,  H01J2237/24564 ,  H01J2237/2803 ,  H01J2237/30488 ,  H01L22/12

    Abstract: System and a method for electrically testing a semiconductor wafer, the method including: (a) scanning a charged particle beam along at least one scan line while maintaining an electrode located at a vicinity of the wafer at a first voltage that differs from a voltage level of a first scanned portion of the wafer, and collecting charged particles scattered from the first scanned portion; (b) scanning a charged particle beam along at least one other scan line while maintaining the electrode at a second voltage that differs from a voltage level of a second scanned portion such as to control a charging state of at least an area that comprises the first and second scanned portions; and (c) repeating the scanning stages until a predefined section of the wafer is scanned.

    Abstract translation: 系统和用于电测试半导体晶片的方法，所述方法包括：（a）沿着至少一条扫描线扫描带电粒子束，同时将位于晶片附近的电极保持在不同于电压电平的第一电压 并收集从第一扫描部分散射的带电粒子; （b）沿着至少一个其他扫描线扫描带电粒子束，同时将电极保持在不同于第二扫描部分的电压电平的第二电压，以便控制至少包括第一扫描部分的区域的充电状态 和第二扫描部分; 和（c）重复扫描阶段，直到扫描晶片的预定部分。

    SCANNING ELECTRON MICROSCOPE AND SAMPLE OBSERVATION METHOD
    69.
    发明申请
    SCANNING ELECTRON MICROSCOPE AND SAMPLE OBSERVATION METHOD 审中-公开

    公开(公告)号：US20180269032A1

    公开(公告)日：2018-09-20

    申请号：US15983346

    申请日：2018-05-18

    Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

    Inventor： Zhaohui CHENG ,  Hikaru KOYAMA ,  Yoshinobu KIMURA ,  Hiroyuki SHINADA ,  Osamu KOMURO

    IPC: H01J37/28

    CPC classification number: H01J37/28 ,  H01J2237/2803

    Abstract: A scanning electron microscope of the present invention performs scanning by changing a scanning line density in accordance with a sample when an image of a scanned region is formed by scanning a two-dimensional region on the sample with an electron beam or is provided with a GUI having sample information input means which inputs information relating to the sample and display means which displays a recommended scanning condition according to the input and performs scanning with a scanning line density according to the sample by selecting the recommended scanning condition. As a result, in observation using a scanning electron microscope, a suitable scanning device which can improve contrast of a profile of a two-dimensional pattern and suppress shading by suppressing the influence of charging caused by primary charged particle radiation and by improving a detection rate of secondary electrons and a scanning method are provided.

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