公开(公告)号：US08680565B2

公开(公告)日：2014-03-25

申请号：US13707292

申请日：2012-12-06

Applicant: Genesis Photonics Inc.

Inventor： Yi-Ru Huang ,  Chih-Ling Wu ,  Yu-Yun Lo ,  Po-Jen Su

IPC: H01L33/38 ,  H01L33/24

CPC classification number: H01L33/36 ,  H01L33/38 ,  H01L33/382

Abstract: A light emitting diode (LED) is revealed. The LED includes a substrate, a first-type-doped layer, a light emitting layer, a second-type-doped layer, a plurality of first grooves, a second groove, an insulation layer, a first contact, and a second contact. The LED features that the second groove is connected to one end of each first groove and penetrates the second-type-doped layer and the light emitting layer to expose a part of the first-type-doped layer. The contact area between the first contact and the first-type-doped layer is increased. Therefore, the LED is worked at high current densities without heat accumulation. Moreover, the light emitting area is not reduced and the light emitting efficiency is not affected. The LED is flipped on a package substrate to form a flip-chip LED package.

Abstract translation: 揭示了发光二极管（LED）。 LED包括基板，第一掺杂层，发光层，第二类型掺杂层，多个第一凹槽，第二凹槽，绝缘层，第一触点和第二触点。 LED的特征在于，第二凹槽连接到每个第一凹槽的一端并且穿透第二类型掺杂层和发光层以暴露第一掺杂层的一部分。 第一接触和第一掺杂层之间的接触面积增加。 因此，LED在高电流密度下工作而不会积热。 此外，发光面积不降低，发光效率不受影响。 LED在封装衬底上翻转以形成倒装芯片LED封装。

公开(公告)号：US10734551B2

公开(公告)日：2020-08-04

申请号：US16659548

申请日：2019-10-21

Applicant: Genesis Photonics Inc.

Inventor： Yi-Ru Huang ,  Tung-Lin Chuang ,  Yan-Ting Lan ,  Sheng-Tsung Hsu ,  Chih-Ming Shen ,  Jing-En Huang ,  Teng-Hsien Lai ,  Hung-Chuan Mai ,  Kuan-Chieh Huang ,  Shao-Ying Ting ,  Cheng-Pin Chen ,  Wei-Chen Chien ,  Chih-Chin Cheng ,  Chih-Hung Tseng

IPC: H01L33/38 ,  H01L33/46 ,  H01L33/36 ,  H01L33/60 ,  H01L33/40

Abstract: The invention provides an LED including a first-type semiconductor layer, an emitting layer, a second-type semiconductor layer, a first electrode, a second electrode, a Bragg reflector structure, a conductive layer and insulation patterns. The first electrode and the second electrode are located on the same side of the Bragg reflector structure. The conductive layer is disposed between the Bragg reflector structure and the second-type semiconductor layer. The insulation patterns are disposed between the conductive layer and the second-type semiconductor layer. Each insulating layer has a first surface facing toward the second-type semiconductor layer, a second surface facing away from the second-type semiconductor layer, and an inclined surface. The inclined surface connects the first surface and the second surface and is inclined with respect to the first surface and the second surface.

公开(公告)号：US20200075821A1

公开(公告)日：2020-03-05

申请号：US16531148

申请日：2019-08-05

Applicant: Genesis Photonics Inc.

Inventor： Tung-Lin Chuang ,  Yi-Ru Huang ,  Yu-Chen Kuo ,  Yan-Ting Lan ,  Chih-Ming Shen ,  Jing-En Huang

IPC: H01L33/60 ,  H01L33/36 ,  H01L33/62 ,  H01L33/14 ,  H01L25/075

Abstract: A light emitting diode chip including an epitaxy stacked layer, first and second electrodes and a first reflective layer is provided. The epitaxy stacked layer includes first-type and second-type semiconductor layers and a light-emitting layer. The first and second electrodes are respectively electrically connected to the first-type and second-type semiconductor layers. An orthogonal projection of the light-emitting layer on the first-type semiconductor layer is misaligned with an orthogonal projection of the first electrode on the first-type semiconductor layer. The first reflective layer is disposed on the epitaxy stacked layer, the first and second electrodes. An orthogonal projection of the first reflective layer on the second-type semiconductor layer is misaligned with an orthogonal projection of the second electrode on the second-type semiconductor layer. Furthermore, a light emitting diode device is also provided.

公开(公告)号：US10453999B2

公开(公告)日：2019-10-22

申请号：US15981855

申请日：2018-05-16

Applicant: Genesis Photonics Inc.

Inventor： Yi-Ru Huang ,  Tung-Lin Chuang ,  Yan-Ting Lan ,  Sheng-Tsung Hsu ,  Chih-Ming Shen ,  Jing-En Huang ,  Teng-Hsien Lai ,  Hung-Chuan Mai ,  Kuan-Chieh Huang ,  Shao-Ying Ting ,  Cheng-Pin Chen ,  Wei-Chen Chien ,  Chih-Chin Cheng ,  Chih-Hung Tseng

IPC: H01L33/00 ,  H01L33/38 ,  H01L33/46 ,  H01L33/36 ,  H01L33/60 ,  H01L33/40

Abstract: The invention provides an LED including a first-type semiconductor layer, an emitting layer, a second-type semiconductor layer, a first electrode, a second electrode, a Bragg reflector structure, a conductive layer and insulation patterns. The first electrode and the second electrode are located on the same side of the Bragg reflector structure. The conductive layer is disposed between the Bragg reflector structure and the second-type semiconductor layer. The insulation patterns are disposed between the conductive layer and the second-type semiconductor layer. Each insulating layer has a first surface facing toward the second-type semiconductor layer, a second surface facing away from the second-type semiconductor layer, and an inclined surface. The inclined surface connects the first surface and the second surface and is inclined with respect to the first surface and the second surface.

公开(公告)号：US10326047B2

公开(公告)日：2019-06-18

申请号：US15255161

申请日：2016-09-02

Applicant: Genesis Photonics Inc.

Inventor： Tsung-Syun Huang ,  Jing-En Huang ,  Yu-Chen Kuo ,  Yan-Ting Lan ,  Kai-Shun Kang ,  Fei-Lung Lu ,  Teng-Hsien Lai ,  Yi-Ru Huang

IPC: H01L33/06 ,  H01L33/38 ,  H01L33/14 ,  H01L33/20

Abstract: A light-emitting diode including a semiconductor epitaxial layer, a first electrode, and a second electrode is provided. The semiconductor epitaxial layer includes a first-type doped semiconductor layer, a second-type doped semiconductor layer, and a quantum well layer. A recessed portion is formed in the semiconductor epitaxial layer. The recessed portion separates the second-type doped semiconductor layer, the quantum well layer, and a portion of the first-type doped semiconductor layer and defines a first region and a second region on the semiconductor epitaxial layer. The first electrode is located in the first region and electrically connected to at least a portion of the first-type doped semiconductor layer and at least a portion of the second-type doped semiconductor layer. The second electrode is located in the second region and electrically connected to the second-type doped semiconductor layer.

公开(公告)号：US10263156B2

公开(公告)日：2019-04-16

申请号：US15871891

申请日：2018-01-15

Applicant: Genesis Photonics Inc.

Inventor： Yi-Ru Huang ,  Yu-Yun Lo ,  Chih-Ling Wu ,  Jing-En Huang ,  Shao-Ying Ting

IPC: H01L33/40 ,  H01L33/42

Abstract: A light emitting diode structure including a substrate, a semiconductor epitaxial structure, a first insulating layer, a first reflective layer, a second reflective layer, a second insulating layer and at least one electrode. The substrate has a tilt surface. The semiconductor epitaxial structure at least exposes the tilt surface. The first insulating layer exposes a portion of the semiconductor epitaxial structure. The first reflective layer is at least partially disposed on the portion of the semiconductor epitaxial structure and electrically connected to the semiconductor epitaxial structure. The second reflective layer is disposed on the first reflective layer and the first insulating layer, and covers at least the portion of the tilt surface. The second insulating layer is disposed on the second reflective layer. The electrode is disposed on the second reflective layer and electrically connected to the first reflective layer and the semiconductor epitaxial structure.

公开(公告)号：US10164145B2

公开(公告)日：2018-12-25

申请号：US15859714

申请日：2018-01-01

Applicant: Genesis Photonics Inc.

Inventor： Shao-Ying Ting ,  Kuan-Chieh Huang ,  Jing-En Huang ,  Yi-Ru Huang ,  Sie-Jhan Wu ,  Long-Lin Ke

IPC: H01L33/00 ,  H01L33/62 ,  H01L33/08 ,  H01L33/50 ,  H01L33/52 ,  H01L25/075 ,  H05B33/08 ,  H01L33/48 ,  H01L33/64 ,  H01L27/15

Abstract: A method for manufacturing a light emitting unit is provided. A semiconductor structure including a plurality of light emitting dice separated from each other is provided. A molding compound is formed to encapsulate the light emitting dice. Each of the light emitting dice includes a light emitting element, a first electrode and a second electrode. A patterned metal layer is formed on the first electrodes and the second electrodes of the light emitting dice. A substrate is provided, where the molding compound is located between the substrate and the light emitting elements of the light emitting dice. A cutting process is performed to cut the semiconductor structure, the patterned metal layer, the molding compound and the substrate so as to define a light emitting unit with a series connection loop, a parallel connection loop or a series-parallel connection loop.

公开(公告)号：US20180130926A1

公开(公告)日：2018-05-10

申请号：US15727545

申请日：2017-10-06

Applicant: Genesis Photonics Inc.

Inventor： Yi-Ru Huang ,  Sheng-Tsung Hsu ,  Yu-Chen Kuo ,  Chih-Ming Shen ,  Tung-Lin Chuang ,  Tsung-Syun Huang ,  Jing-En Huang

IPC: H01L33/38 ,  H01L33/14 ,  H01L33/44 ,  H01L33/46 ,  H01L33/62 ,  H01L33/00 ,  H01L33/32

CPC classification number: H01L33/382 ,  H01L33/007 ,  H01L33/0095 ,  H01L33/06 ,  H01L33/14 ,  H01L33/145 ,  H01L33/32 ,  H01L33/387 ,  H01L33/44 ,  H01L33/46 ,  H01L33/62 ,  H01L2933/0016 ,  H01L2933/0025

Abstract: An LED includes a first-type semiconductor layer, a light emitting layer, a second-type semiconductor layer, a first metal layer, a first current conducting layer, a first bonding layer, and a second current conducting layer. The light emitting layer is located between the first-type semiconductor layer and the second-type semiconductor layer. The first metal layer is located on the first-type semiconductor layer and electrically connected to the first-type semiconductor layer. The first metal layer is located between the first current conducting layer and the first-type semiconductor layer. The first current conducting layer is located between the first bonding layer and the first metal layer. The first bonding layer is electrically connected to the first-type semiconductor layer via the first current conducting layer and the first metal layer. The first bonding layer has through holes overlapping with the first metal layer.

公开(公告)号：US20180122984A1

公开(公告)日：2018-05-03

申请号：US15859714

申请日：2018-01-01

Applicant: Genesis Photonics Inc.

Inventor： Shao-Ying Ting ,  Kuan-Chieh Huang ,  Jing-En Huang ,  Yi-Ru Huang ,  Sie-Jhan Wu ,  Long-Lin Ke

IPC: H01L33/00 ,  H05B33/08 ,  H01L33/08 ,  H01L33/48 ,  H01L33/50 ,  H01L33/62 ,  H01L33/52 ,  H01L25/075 ,  H01L33/64 ,  H01L27/15

CPC classification number: H01L33/0095 ,  H01L25/0753 ,  H01L27/15 ,  H01L33/005 ,  H01L33/08 ,  H01L33/486 ,  H01L33/50 ,  H01L33/502 ,  H01L33/507 ,  H01L33/52 ,  H01L33/62 ,  H01L33/64 ,  H01L2224/04105 ,  H01L2224/18 ,  H01L2224/19 ,  H01L2224/24137 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2933/0041 ,  H01L2933/005 ,  H01L2933/0066 ,  H05B33/0803 ,  H05B33/0806 ,  H05B33/0827 ,  H01L2924/00

Abstract: A method for manufacturing a light emitting unit is provided. A semiconductor structure including a plurality of light emitting dice separated from each other is provided. A molding compound is formed to encapsulate the light emitting dice. Each of the light emitting dice includes a light emitting clement, a first electrode and a second electrode. A patterned metal layer is formed on the first electrodes and the second electrodes of the light emitting dice. A substrate is provided, where the molding compound is located between the substrate and the light emitting elements of the light emitting dice. A cutting process is performed to cut the semiconductor structure, the patterned metal layer, the molding compound and the substrate so as to define a light emitting unit with a series connection loop, a parallel connection loop or a series-parallel connection loop.

公开(公告)号：US20180083168A1

公开(公告)日：2018-03-22

申请号：US15823480

申请日：2017-11-27

Applicant: Genesis Photonics Inc.

Inventor： Kuan-Chieh Huang ,  Shao-Ying Ting ,  Jing-En Huang ,  Yi-Ru Huang

IPC: H01L33/50 ,  H01L33/56 ,  H01L33/54 ,  H01L33/60

CPC classification number: H01L33/505 ,  H01L33/507 ,  H01L33/54 ,  H01L33/56 ,  H01L33/60

Abstract: A light emitting component includes a light emitting unit, a molding compound and a wavelength converting layer. The light emitting unit has a forward light emitting surface. The molding compound covers the light emitting unit. The wavelength converting layer is disposed above the molding compound. The wavelength converting layer has a first surface and a second surface opposite to the first surface, wherein the first surface is located between the forward light emitting surface and the second surface, and at least one of the first and second surfaces is non-planar.