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    프로세스 감응성 계측 시스템 및 방법
    1.
    发明公开
    프로세스 감응성 계측 시스템 및 방법 审中-公开
    过程灵敏度测量系统和方法

    公开(公告)号：KR20180030722A

    公开(公告)日：2018-03-23

    申请号：KR20187007128

    申请日：2016-08-12

    Applicant: KLA TENCOR CORP

    Inventor： LEE MYUNGJUN ,  SMITH MARK D ,  KAPASI SANJAY ,  PANDEV STILLIAN ,  SANKO DIMITRY ,  SUBRAHMANYAN PRADEEP ,  LEVY ADY

    IPC: G03F7/20 ,  G03F7/00 ,  H01L21/027 ,  H01L21/66

    CPC classification number: G03F7/70558 ,  G03F7/70091 ,  G03F7/70641

    Abstract: 리소그래피시스템은조명소스및 투영광학장치의세트를포함한다. 조명소스는축외조명폴로부터의조명의빔을패턴마스크로지향시킨다. 패턴마스크는조명폴로부터의조명을포함하는회절빔의세트를생성하기위한패턴엘리먼트의세트를포함한다. 투영광학장치의세트에의해수신되는회절빔의세트중 적어도두 개의회절빔은투영광학장치의세트의동공평면에서비대칭적으로분포된다. 회절빔의세트중 적어도두 개의회절빔은, 패턴엘리먼트의세트의이미지에대응하는제조엘리먼트의세트를형성하도록샘플에비대칭적으로입사한다. 샘플상의제조엘리먼트의세트는투영광학장치의세트의광학축을따르는샘플의위치의하나이상의지표를포함한다.

    Abstract translation: 光刻系统包括照明源和一组投影光学器件。 照明源将照明光束从离轴照明杆引导到图案掩模。 图案掩模包括一组图案元件，用于产生包括来自照明杆的照明的一组衍射束。 由该组投影光学器件接收的至少两组衍射光束不对称分布在该组投影光学器件的光瞳平面中。 至少两组衍射光束不对称地入射在样本上以形成对应于该组图案元素的图像的一组制造元件。 样品上的一组制造元件包括样品沿该组投影光学器件的光轴的位置的一个或多个指示符。

    PARAMETRIC PROFILING USING OPTICAL SPECTROSCOPIC SYSTEMS
    3.
    发明专利
    PARAMETRIC PROFILING USING OPTICAL SPECTROSCOPIC SYSTEMS 未知

    公开(公告)号：AU2002360738A1

    公开(公告)日：2003-07-09

    申请号：AU2002360738

    申请日：2002-12-19

    Applicant: KLA TENCOR CORP

    Inventor： BAREKET NOAH ,  MIEHER WALTER ,  DZIURA TED ,  SHCHEGROV ANDREI V ,  FABRIKANT ANATOLY ,  NIKOONAHAD MEHRDAD ,  LEVY ADY ,  WACK DANIEL C

    IPC: G01N21/21 ,  G01N21/47 ,  G01N21/95 ,  G01N21/956 ,  G03F7/20 ,  G01B11/06 ,  G01B11/24 ,  G01B11/30 ,  H01L21/66

    Abstract: A gallery of seed profiles is constructed and the initial parameter values associated with the profiles are selected using manufacturing process knowledge of semiconductor devices. Manufacturing process knowledge may also be used to select the best seed profile and the best set of initial parameter values as the starting point of an optimization process whereby data associated with parameter values of the profile predicted by a model is compared to measured data in order to arrive at values of the parameters. Film layers over or under the periodic structure may also be taken into account. Different radiation parameters such as the reflectivities Rs, Rp and ellipsometric parameters may be used in measuring the diffracting structures and the associated films. Some of the radiation parameters may be more sensitive to a change in the parameter value of the profile or of the films then other radiation parameters. One or more radiation parameters that are more sensitive to such changes may be selected in the above-described optimization process to arrive at a more accurate measurement. The above-described techniques may be supplied to a track/stepper and etcher to control the lithographic and etching processes in order to compensate for any errors in the profile parameters.

    METHOD AND SYSTEM FOR DETERMINING IN-PLANE DISTORTIONS IN A SUBSTRATE
    4.
    发明专利
    METHOD AND SYSTEM FOR DETERMINING IN-PLANE DISTORTIONS IN A SUBSTRATE 未知

    公开(公告)号：SG11201708137VA

    公开(公告)日：2017-11-29

    申请号：SG11201708137V

    申请日：2016-04-06

    Applicant: KLA TENCOR CORP

    Inventor： SMITH MARK D ,  SOLOMON JOSE ,  SHERWIN STUART ,  MIEHER WALTER D ,  LEVY ADY

    IPC: H01L21/66 ,  H01L21/687

    Abstract: The determination of in-plane distortions of a substrate includes measuring one or more out-of-plane distortions of the substrate in an unchucked state, determining an effective film stress of a film on the substrate in the unchucked state based on the measured out-of-plane distortions of the substrate in the unchucked state, determining in-plane distortions of the substrate in a chucked state based on the effective film stress of the film on the substrate in the unchucked state and adjusting at least one of a process tool or an overlay tool based on at least one of the measured out-of-plane distortions or the determined in-plane distortions.

    OVERLAY CONTROL WITH NON-ZERO OFFSET PREDICTION
    5.
    发明专利
    OVERLAY CONTROL WITH NON-ZERO OFFSET PREDICTION 未知

    公开(公告)号：SG11201906278WA

    公开(公告)日：2019-08-27

    申请号：SG11201906278W

    申请日：2018-01-24

    Applicant: KLA TENCOR CORP

    Inventor： ADEL MICHAEL A ,  MANASSEN AMNON ,  PIERSON WILLIAM ,  LEVY ADY ,  SUBRAHMANYAN PRADEEP ,  YERUSHALMI LIRAN ,  CHOI DONGSUB ,  HEO HOYOUNG ,  ALUMOT DROR ,  ROBINSON JOHN

    IPC: H01L21/027 ,  G03F7/20

    Abstract: CONTROLLER :ios I 1110 I I PROCESSORS I MEMORY 126 122 124 (12) INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (43) International Publication Date 02 August 2018 (02.08.2018) WIP0 I PCT ill mu °million °nolo olomollm loll mum oimiE (10) International Publication Number WO 2018/140534 Al (51) International Patent Classification: GO3F 7/20 (2006.01) H01L 21/027 (2006.01) (21) International Application Number: PCT/US2018/015104 (22) International Filing Date: 24 January 2018 (24.01.2018) (25) Filing Language: English (26) Publication Language: English (30) Priority Data: 62/450,454 25 January 2017 (25.01.2017) US 15/867,485 10 January 2018 (10.01.2018) US (71) Applicant: KLA-TENCOR CORPORATION [US/US]; Legal Department, One Technology Drive, Milpitas, Cali- fornia 95035 (US). (72) Inventors: ADEL, Michael A.; 14 Yigal Alon Street, 30900 Ya'akov Zichron (IL). MANASSEN, Amnon; 10 Golda Meir, 34892 Haifa (IL). PIERSON, William; 5212 Keene Cove, Austin, Texas 78730 (US). LEVY, Ady; 1323 Glen Eyrie Avenue, San Jose, California 95125 (US). SUBRAHMANYAN, Pradeep; 22117 Wallace Dri- ve, Cupertino, California 95014 (US). YERUSHALMI, Liran; 43 Inbar, 30900 Zicron Yaacob (IL). CHOI, Dongsub; Hyundae Hometown 102-501, Seocheon-dong, Kiheung-Ku, Kyunggi Province, Yongin City 446-960 (KR). HEO, Hoyoung; 464-816,11-9, Namhansanseong- ro, 792 Beon-gil, Gwangju-si, Gyeonggi-do 31250 (KR). ALUMOT, Dror; 1 Einstein St., 7647001 Rehovot (IL). ROBINSON, John; 4000 North Hills Drive, Austin, Texas 78731 (US). (74) Agent: MCANDREWS, Kevin et al.; Kla-Tencor Corpo- ration, Legal Department, One Technology Drive, Milpitas, California 95035 (US). (81) Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, = (54) Title: OVERLAY CONTROL WITH NON-ZERO OFFSET PREDICTION 102 112 114 148 118 116 O 00 O C 120 4111111111111111 FIG.1 B (57) : A process control system may include a controller configured to receive after-development inspection (ADI) data after a lithography step for the current layer from an ADI tool, receive after etch inspection (AEI) overlay data after an exposure step of the current layer from an AEI tool, train a non-zero offset predictor with ADI data and AEI overlay data to predict a non-zero offset from input ADI data, generate values of the control parameters of the lithography tool using ADI data and non-zero offsets generated by the non-zero offset predictor, and provide the values of the control parameters to the lithography tool for fabricating the current layer on the at least one production sample. [Continued on next page] WO 2018/140534 Al MIDEDIMODOMMERIOMMHOIREHOMMEMOIMIE CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). Published: — with international search report (Art. 21(3))

    PROCESS-INDUCED DISPLACEMENT CHARACTERIZATION DURING SEMICONDUCTOR PRODUCTION
    7.
    发明专利
    PROCESS-INDUCED DISPLACEMENT CHARACTERIZATION DURING SEMICONDUCTOR PRODUCTION 未知

    公开(公告)号：SG11202010083TA

    公开(公告)日：2020-11-27

    申请号：SG11202010083T

    申请日：2018-12-20

    Applicant: KLA TENCOR CORP

    Inventor： VUKKADALA PRADEEP ,  SMITH MARK D ,  LEVY ADY ,  DIGHE PRASANNA ,  MUELLER DIETER

    IPC: H01L21/67 ,  H01L21/033

    Abstract: A controller is configured to perform at least a first characterization process prior to at least one discrete backside film deposition process on a semiconductor wafer; perform at least an additional characterization process following the at least one discrete backside film deposition process; determine at least one of a film force or one or more in-plane displacements for at least one discrete backside film deposited on the semiconductor wafer via the at least one discrete backside film deposition process based on the at least the first characterization process and the at least the additional characterization process; and provide at least one of the film force or the one or more in-plane displacements to at least one process tool via at least one of a feed forward loop or a feedback loop to improve performance of one or more fabrication processes.

    MODEL-BASED HOT SPOT MONITORING
    9.
    发明公开
    MODEL-BASED HOT SPOT MONITORING 审中-公开

    公开(公告)号：EP3295478A1

    公开(公告)日：2018-03-21

    申请号：EP16793288

    申请日：2016-05-07

    Applicant: KLA TENCOR CORP

    Inventor： PANDEV STILIAN ,  KAPASI SANJAY ,  SMITH MARK D ,  LEVY ADY

    IPC: H01L21/66

    CPC classification number: G01B11/00 ,  H01L22/12 ,  H01L22/20

    Abstract: Methods and systems for monitoring parameters characterizing a set of hot spot structures fabricated at different locations on a semiconductor wafer are presented herein. The hot spot structures are device structures that exhibit sensitivity to process variations and give rise to limitations on permissible process variations that must be enforced to prevent device failures and low yield. A trained hot spot measurement model is employed to receive measurement data generated by one or more metrology systems at one or more metrology targets and directly determine values of one or more hot spot parameters. The hot spot measurement model is trained to establish a functional relationship between one or more characteristics of a hot spot structure under consideration and corresponding measurement data associated with measurements of at least one metrology target on the same wafer. A fabrication process parameter is adjusted based on the value of a measured hot spot parameter.

    LED SOLAR ILLUMINATOR
    10.
    发明申请
    LED SOLAR ILLUMINATOR 审中-公开
    LED太阳能照明灯

    公开(公告)号：WO2012138460A2

    公开(公告)日：2012-10-11

    申请号：PCT/US2012028910

    申请日：2012-03-13

    Applicant: KLA TENCOR CORP ,  ZHAO GUOHENG ,  LEVY ADY ,  SALNIK ALEX ,  VAEZ-IRAVANI MEHDI ,  NICOLAIDES LENA ,  NGAI SAMUEL S H

    Inventor： ZHAO GUOHENG ,  LEVY ADY ,  SALNIK ALEX ,  VAEZ-IRAVANI MEHDI ,  NICOLAIDES LENA ,  NGAI SAMUEL S H

    IPC: G01N21/01 ,  F21S2/00 ,  F21V8/00 ,  G01R31/26

    CPC classification number: H05B33/0803

    Abstract: An apparatus for illuminating a target surface, the apparatus having a plurality of LED arrays, where each of the arrays has a plurality of individually addressable LEDs, and where at least one of the arrays is disposed at an angle of between about forty-five degrees and about ninety degrees relative to the target surface, where all of the arrays supply light into a light pipe, the light pipe having interior walls made of a reflective material, where light exiting the light pipe illuminates the target surface, and a controller for adjusting an intensity of the individually addressable light sources.

    Abstract translation: 一种用于照射目标表面的装置，该装置具有多个LED阵列，其中每个阵列具有多个独立可寻址的LED，并且其中至少一个阵列以大约四十五度之间的角度设置 并且相对于目标表面大约九十度，其中所有阵列将光提供到光管中，光管具有由反射材料制成的内壁，其中离开光管的光照射目标表面，以及用于调节的控制器 独立寻址光源的强度。

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