LIGHT EMITTING DEVICE WITH EXTENDABLE AND FLEXIBLE CARRIER

    公开(公告)号:US20190394879A1

    公开(公告)日:2019-12-26

    申请号:US16451832

    申请日:2019-06-25

    Inventor: Min-Hsun HSIEH

    Abstract: A light-emitting device comprises a flexible carrier having a plurality of segmentations, a light-emitting unit and a connecting wire. The flexible carrier has a carrier part and an extendable part. The light-emitting unit is set on the carrier part. The extendable part has a plurality of segmentations. The flexible carrier has a continuous common surface.

    DISPLAY APPARATUS WITH ARRAY OF LIGHT EMITTING DIODES AND METHOD OF MANUFACTURING THE SAME

    公开(公告)号:US20190392751A1

    公开(公告)日:2019-12-26

    申请号:US16447484

    申请日:2019-06-20

    Inventor: Min-Hsun HSIEH

    Abstract: A display includes a substrate with a plurality of electronic control elements, an array of light-emitting diodes having a semiconductor layer, a plurality of light emitting units disposed on the semiconductor layer, and a plurality of first electrodes disposed on the semiconductor layer, an bonding layer disposed between the substrate and the array of light-emitting diodes, and a plurality of wavelength conversion elements disposed on the semiconductor layer and spaced apart from each other. The plurality of wavelength conversion elements and the plurality of light emitting units are disposed at different sides of the semiconductor layer. The plurality of wavelength conversion elements is arranged in positions corresponding to the plurality of light-emitting units.

    METHOD OF SELECTIVELY TRANSFERRING SEMICONDUCTOR DEVICE
    100.
    发明申请
    METHOD OF SELECTIVELY TRANSFERRING SEMICONDUCTOR DEVICE 有权
    选择性传输半导体器件的方法

    公开(公告)号:US20160163917A1

    公开(公告)日:2016-06-09

    申请号:US14908886

    申请日:2013-07-29

    Abstract: A method of selectively transferring semiconductor devices comprises the steps of providing a substrate having a first surface and a second surface; providing a plurality of semiconductor epitaxial stacks on the first surface, wherein each of the plurality of semiconductor epitaxial stacks comprises a first semiconductor epitaxial stack and a second semiconductor epitaxial stack, and the first semiconductor epitaxial stack is apart from the second semiconductor epitaxial stack, and wherein a adhesion between the first semiconductor epitaxial stack and the substrate is different from a adhesion between the second semiconductor epitaxial stack and the substrate; and selectively separating the first semiconductor epitaxial stack or the second semiconductor epitaxial stack from the substrate.

    Abstract translation: 选择性地转移半导体器件的方法包括提供具有第一表面和第二表面的衬底的步骤; 在所述第一表面上提供多个半导体外延堆叠,其中所述多个半导体外延堆叠中的每一个包括第一半导体外延堆叠和第二半导体外延堆叠,并且所述第一半导体外延堆叠体与所述第二半导体外延堆叠体分离,以及 其中所述第一半导体外延叠层和所述基板之间的粘合不同于所述第二半导体外延叠层和所述基板之间的粘附; 以及从衬底选择性地分离第一半导体外延层或第二半导体外延层。

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