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公开(公告)号:US20190394879A1
公开(公告)日:2019-12-26
申请号:US16451832
申请日:2019-06-25
Applicant: EPISTAR CORPORATION
Inventor: Min-Hsun HSIEH
Abstract: A light-emitting device comprises a flexible carrier having a plurality of segmentations, a light-emitting unit and a connecting wire. The flexible carrier has a carrier part and an extendable part. The light-emitting unit is set on the carrier part. The extendable part has a plurality of segmentations. The flexible carrier has a continuous common surface.
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92.
公开(公告)号:US20190392751A1
公开(公告)日:2019-12-26
申请号:US16447484
申请日:2019-06-20
Applicant: EPISTAR CORPORATION
Inventor: Min-Hsun HSIEH
Abstract: A display includes a substrate with a plurality of electronic control elements, an array of light-emitting diodes having a semiconductor layer, a plurality of light emitting units disposed on the semiconductor layer, and a plurality of first electrodes disposed on the semiconductor layer, an bonding layer disposed between the substrate and the array of light-emitting diodes, and a plurality of wavelength conversion elements disposed on the semiconductor layer and spaced apart from each other. The plurality of wavelength conversion elements and the plurality of light emitting units are disposed at different sides of the semiconductor layer. The plurality of wavelength conversion elements is arranged in positions corresponding to the plurality of light-emitting units.
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公开(公告)号:US20190207069A1
公开(公告)日:2019-07-04
申请号:US16298648
申请日:2019-03-11
Applicant: EPISTAR CORPORATION
Inventor: Lung-Kuan LAI , Ching-Tai CHENG , Yih-Hua RENN , Min-Hsun HSIEH , Chun-Hung LIU , Shih-An LIAO , Ming-Chi HSU , Yu Chen LIAO
CPC classification number: H01L33/60 , G02B6/0051 , G02B6/0073 , H01L25/0753 , H01L33/385 , H01L33/46 , H01L33/505 , H01L33/507 , H01L33/54 , H01L33/62 , H01L2224/04105 , H01L2224/18 , H01L2224/96 , H01L2924/1815 , H01L2933/0016 , H01L2933/0025 , H01L2933/0041 , H01L2933/0058 , H01L2933/0066
Abstract: A light-emitting device includes a light body having an internal electrode layer, and a conductive layer. The conductive layer has a first portion formed on the internal electrode layer and overlapping the light body in a first direction, and a second portion overlapping the light body in a second direction. The first direction is perpendicular to the second direction.
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公开(公告)号:US20190131500A1
公开(公告)日:2019-05-02
申请号:US16172406
申请日:2018-10-26
Applicant: EPISTAR CORPORATION
Inventor: Min-Hsun HSIEH , Shih-An LIAO
Abstract: A light-emitting device includes a carrier, a light-emitting unit disposed on the carrier, a reflective element arranged on the light-emitting unit, and an optical element arranged on the carrier and surrounding the light-emitting unit.
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公开(公告)号:US20190103535A1
公开(公告)日:2019-04-04
申请号:US16192292
申请日:2018-11-15
Applicant: EPISTAR CORPORATION
Inventor: Chih-Chiang LU , Wei-Chih PENG , Shiau-Huei SAN , Min-Hsun HSIEH
IPC: H01L33/62 , H01L33/32 , H01L33/40 , H01L33/22 , H01L33/28 , H01L33/30 , H01L33/50 , H01L33/56 , H01L33/60 , H01L33/00 , H01L33/38
Abstract: A semiconductor device comprising: a substrate; a first reflector on the substrate; a second reflector on the first reflector; a semiconductor system directly contacting the first reflector and the second reflector and comprising a first side wall; and an insulating layer covering the first side wall and formed between the substrate and the first reflector.
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公开(公告)号:US20180254391A1
公开(公告)日:2018-09-06
申请号:US15973091
申请日:2018-05-07
Applicant: Epistar Corporation
Inventor: Cheng-Nan HAN , Tsung-Xian LEE , Min-Hsun HSIEH , Hung-Hsuan CHEN , Hsin-Mao LIU , Hsing-Chao CHEN , Ching-San TAO , Chih-Peng NI , Tzer- Perng CHEN , Jen-Chau WU
CPC classification number: H01L33/58 , H01L24/19 , H01L24/20 , H01L24/97 , H01L33/20 , H01L33/38 , H01L33/44 , H01L33/46 , H01L33/486 , H01L2933/0016
Abstract: The disclosure discloses an optoelectronic element comprising: an optoelectronic unit comprising a first metal layer, a second metal layer, and an outermost lateral surface; an insulating layer having a first portion overlapping the optoelectronic unit and extending beyond the lateral surface, and a second portion separated from the first portion in a cross-sectional view; and a first conductive layer formed on the insulating layer.
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公开(公告)号:US20180078782A1
公开(公告)日:2018-03-22
申请号:US15709118
申请日:2017-09-19
Applicant: EPISTAR CORPORATION
Inventor: Min-Hsun HSIEH , Jai-Tai KUO , Chang-Hseih WU , Tzu-Hsiang WANG , Chi-Chih PU
IPC: A61N5/06 , A61B5/00 , H01L25/075 , H01L27/15
CPC classification number: A61N5/062 , A61B5/0059 , A61B2017/00057 , A61N5/0616 , A61N2005/0632 , A61N2005/0652 , A61N2005/0658 , H01L25/0756 , H01L27/15
Abstract: A light-emitting module includes a carrier, a plurality of light-emitting units, and a protection layer. The carrier has a lighting portion and an extending portion. The plurality of light-emitting units is disposed on the lighting portion. The protection layer covers the plurality of light-emitting units and the lighting portion, and exposes the extending portion.
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公开(公告)号:US20180076369A1
公开(公告)日:2018-03-15
申请号:US15699598
申请日:2017-09-08
Applicant: EPISTAR CORPORATION
Inventor: Ching-Tai CHENG , Lung-Kuan LAI , Yih-Hua RENN , Min-Hsun HSIEH
CPC classification number: H01L33/62 , H01L25/0753 , H01L33/54 , H01L33/647 , H01L2933/0033 , H01L2933/0066
Abstract: A light-emitting device includes a light-emitting element, a light pervious layer, an electrode defining layer, a first soldering pad and a second soldering pad. The light-emitting element has an upper surface, a bottom surface, and a lateral surface arranged between the upper surface and the bottom surface. The light pervious layer covers the upper surface and the lateral surface. The electrode defining layer covers a part of the light pervious layer. The first soldering pad and the second soldering pad are surrounded by the electrode defining layer. A gap is located between the first soldering pad and the second soldering pad while the gap remains substantially constant.
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公开(公告)号:US20180019382A9
公开(公告)日:2018-01-18
申请号:US14858477
申请日:2015-09-18
Applicant: EPISTAR CORPORATION
Inventor: Cheng-Nan HAN , Tsung-Xian LEE , Min-Hsun HSIEH , Hung-Hsuan CHEN , Hsin-Mao LIU , Hsing-Chao CHEN , Ching San TAO , Chih-Peng NI , Tzer-Perng CHEN , Jen-Chau WU , Masafumi SANO , Chih-Ming WANG
CPC classification number: H01L33/502 , H01L21/568 , H01L33/38 , H01L33/387 , H01L33/44 , H01L33/46 , H01L33/50 , H01L33/54 , H01L33/58 , H01L33/62 , H01L33/647 , H01L2224/04105 , H01L2224/19 , H01L2224/32245 , H01L2224/48091 , H01L2224/73265 , H01L2224/73267 , H01L2224/9222 , H01L2933/005 , H01L2933/0066 , H01L2924/00014
Abstract: An optoelectronic element includes an optoelectronic unit, a first metal layer, a second metal layer, a conductive layer and a transparent structure. The optoelectronic unit has a central line in a top view, a top surface, and a bottom surface. The second metal layer is formed on the top surface, and has an extension portion crossing over the central line and extending to the first metal layer. The conductive layer covers the first metal layer and the extension portion. The transparent structure covers the bottom surface without covering the top surface.
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100.
公开(公告)号:US20160163917A1
公开(公告)日:2016-06-09
申请号:US14908886
申请日:2013-07-29
Applicant: EPISTAR CORPORATION
Inventor: Chih-Chiang LU , Yi-Ming CHEN , Chun-Yu LIN , Ching-Pei LIN , Chung-Hsun CHIEN , Chien-Fu HUANG , Hao-Min KU , Min-Hsun HSIEH , Tzu-Chieh HSU
IPC: H01L33/00 , H01L33/62 , H01L21/683
CPC classification number: H01L33/0079 , H01L21/6835 , H01L21/6836 , H01L33/0095 , H01L33/62 , H01L2221/68318 , H01L2221/68363 , H01L2221/68381 , H01L2933/0066
Abstract: A method of selectively transferring semiconductor devices comprises the steps of providing a substrate having a first surface and a second surface; providing a plurality of semiconductor epitaxial stacks on the first surface, wherein each of the plurality of semiconductor epitaxial stacks comprises a first semiconductor epitaxial stack and a second semiconductor epitaxial stack, and the first semiconductor epitaxial stack is apart from the second semiconductor epitaxial stack, and wherein a adhesion between the first semiconductor epitaxial stack and the substrate is different from a adhesion between the second semiconductor epitaxial stack and the substrate; and selectively separating the first semiconductor epitaxial stack or the second semiconductor epitaxial stack from the substrate.
Abstract translation: 选择性地转移半导体器件的方法包括提供具有第一表面和第二表面的衬底的步骤; 在所述第一表面上提供多个半导体外延堆叠,其中所述多个半导体外延堆叠中的每一个包括第一半导体外延堆叠和第二半导体外延堆叠,并且所述第一半导体外延堆叠体与所述第二半导体外延堆叠体分离,以及 其中所述第一半导体外延叠层和所述基板之间的粘合不同于所述第二半导体外延叠层和所述基板之间的粘附; 以及从衬底选择性地分离第一半导体外延层或第二半导体外延层。
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