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公开(公告)号：KR101350401B1
公开(公告)日：2014-01-27
申请号：KR1020120129419
申请日：2012-11-15
Applicant: 한국화학연구원
IPC: B82B3/00 , H01L21/336
CPC classification number: B82Y40/00 , B82Y10/00 , H01L21/3105 , H01L29/0673
Abstract: The present invention relates to an aligning method for nanomaterials using nanometer polishing and a manufacturing method for a device using the same and, more specifically, to an aligning method for nanomaterials using nanometer polishing which forms scratches having a nanoscale width and depth on the surface layer of a substrate in one direction and aligns nanomaterials in the scratches to obtain excellent electrical, mechanical and optical properties and a manufacturing method for an electric device using the same. The present invention provides the aligning method for nanomaterials using nanometer polishing comprising: a step (step 1) of forming scratches which have a width of 1-20 nm and are aligned in one direction on the substrate by using a polishing device; and a step (step 2) of bringing nanomaterials on the substrate in which the scratches are formed and aligning the nanomaterials.
Abstract translation: 本发明涉及使用纳米抛光的纳米材料的取向方法和使用其的装置的制造方法，更具体地，涉及使用纳米抛光的纳米材料的取向方法，其形成具有纳米级宽度和深度的划痕 的一个方向上的衬底并且在划痕中对准纳米材料以获得优异的电学，机械和光学性质以及使用其的电子器件的制造方法。 本发明提供使用纳米抛光的纳米材料的对准方法，包括：通过使用抛光装置在基板上形成宽度为1-20nm并沿一个方向排列的划痕的步骤（步骤1）; 以及使纳米材料在其上形成划痕的基板上并对准纳米材料的步骤（步骤2）。
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公开(公告)号：KR1020130125594A
公开(公告)日：2013-11-19
申请号：KR1020120049237
申请日：2012-05-09
Applicant: 한국화학연구원
CPC classification number: C23C16/403
Abstract: The present invention relates to a magnesium oxide precursor which is denoted by chemical formula 1. The magnesium oxide precursor is thermally stable and highly volatile to obtain a thin film which contains high quality magnesium oxide.
Abstract translation: 本发明涉及由化学式1表示的氧化镁前体。氧化镁前体是热稳定且高挥发性的，以获得含有高质量氧化镁的薄膜。
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公开(公告)号：KR1020130124820A
公开(公告)日：2013-11-15
申请号：KR1020120048247
申请日：2012-05-07
Applicant: 한국화학연구원
IPC: G02F1/1368 , H01L51/50 , H01L29/786
CPC classification number: C23C16/403 , C23C14/185 , C23C16/01 , C23C16/0281 , B32B9/041 , H01L29/1606
Abstract: A transfer sheet is obtained by removing a base material after forming a metal oxide/nitride/sulfide thin film and a polymer support layer on the base material. The transfer sheet is used for transferring the metal oxide/nitride/sulfide thin film by removing the polymer support layer after the polymer support layer is attached to the desired base material. Various electronic devices using a graphene electrode and the like are easily used by forming the transferred metal oxide/nitride/sulfide thin film with a desired thickness.
Abstract translation: 通过在基材上形成金属氧化物/氮化物/硫化物薄膜和聚合物载体层之后除去基材来获得转印片。 转印片用于在聚合物支撑层附着到所需的基材上之后通过除去聚合物支撑层来转移金属氧化物/氮化物/硫化物薄膜。 通过形成所需厚度的转移的金属氧化物/氮化物/硫化物薄膜，易于使用使用石墨烯电极等的各种电子装置。
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公开(公告)号：KR1020130104627A
公开(公告)日：2013-09-25
申请号：KR1020120026274
申请日：2012-03-14
Applicant: 한국화학연구원
IPC: H01L21/205
Abstract: PURPOSE: A method for forming a thin film including Sb with an atomic layer deposition method is provided to improve productivity by forming the thin film including Sb at low temperatures through an atomic layer deposition process using a Sb precursor. CONSTITUTION: A substrate is prepared in a vacuum chamber. A Sb precursor material is prepared. A source gas is prepared by the Sb precursor material. A reactive gas including a hydrogen gas is prepared. A purge gas is prepared. A metal precursor gas is prepared by a metal precursor material. A thin film of a Sb-metal monolayer is formed on the substrate by successively supplying the source gas, the reactive gas, the purge gas, and the metal precursor gas to the vacuum chamber.
Abstract translation: 目的：提供一种通过原子层沉积法形成包含Sb的薄膜的方法，以通过使用Sb前体的原子层沉积工艺在低温下形成包含Sb的薄膜来提高生产率。 构成：在真空室中制备基材。 制备Sb前体材料。 源气体由Sb前体材料制备。 制备包括氢气的反应气体。 准备吹扫气体。 通过金属前体材料制备金属前体气体。 通过将源气体，反应气体，吹扫气体和金属前体气体依次供给到真空室，在基板上形成Sb-金属单层薄膜。
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公开(公告)号：KR1020130092053A
公开(公告)日：2013-08-20
申请号：KR1020120013515
申请日：2012-02-10
Applicant: 한국화학연구원
Abstract: PURPOSE: A method for fabricating an Sb-Te-based thermoelectric thin film is provided to obtain an Sb-Te-based thermoelectric material having an excellent ZT value by using a low temperature chemical deposition method without a thermal process or a post process. CONSTITUTION: An Sb deposition layer is formed on the upper part of a substrate. An Sb precursor is supplied to a chamber. The inside of the chamber is purged by using a purge gas. A reaction gas is supplied to the purged chamber. The inside of the chamber is purged by using the purge gas.
Abstract translation: 目的：提供一种制造Sb-Te类热电薄膜的方法，通过使用不具有热处理或后处理的低温化学沉积方法来获得具有优异ZT值的Sb-Te系热电材料。 构成：在基板的上部形成Sb沉积层。 将Sb前体供应到室。 通过使用吹扫气体清洗室的内部。 反应气体被供应到清洗室。 通过使用吹扫气体清洗室的内部。
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Patent Agency Ranking
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公开(公告)号：KR101282047B1
公开(公告)日：2013-07-04
申请号：KR1020110082479
申请日：2011-08-18
Applicant: 한국화학연구원
IPC: H01L31/0445 , H01L31/18
CPC classification number: Y02E10/50 , Y02P70/521
Abstract: 본 발명은 수계 용매를 이용한 CuInSe
2 입자의 제조방법에 관한 것으로, 상세하게, 본 발명에 따른 제조방법은 물 및 초산(CH
3 COOH)의 혼합 용매에 구리 분말, 인듐 분말 및 셀레늄 분말을 포함하는 금속분말 원료를 혼합하여 반응액을 제조하고, 오토클레이브를 이용하여 상기 반응액을 반응시켜 CuInSe
2 입자를 제조하는 방법에 관한 것이다.-
公开(公告)号：KR1020130057790A
公开(公告)日：2013-06-03
申请号：KR1020110123712
申请日：2011-11-24
Applicant: 한국화학연구원
IPC: C09D11/52 , H01B1/14 , H01B1/20 , H01L31/042
CPC classification number: Y02E10/50 , C09D11/52 , C09D11/30 , H01B1/16 , H01L31/042
Abstract: PURPOSE: A manufacturing method of a nano-sized glass frit is provided to obtain high producibility in low costs by using a solution method, and to easily control the size and composition for a solar cell electrode. CONSTITUTION: A manufacturing method of a nano-sized glass frit comprises: a step of manufacturing glass frit nanoparticles by using a sol-gel synthesis method; and a step of mixing the glass frit nanoparticles, metallic nanoparticles, and organic vehicles. An electrode for a solar cell comprises a semiconductor substrate, an antireflection film formed on the substrate, a first conductive layer which is formed by spreading the conductive ink on the antireflective film, and a second conductive film formed of a conductive metal, on the first conductive layer. [Reference numerals] (AA) Raw material; (BB) Basic catalyst; (CC) React; (DD) Wash; (EE) Glass frit nanoparticles
Abstract translation: 目的：提供一种纳米尺寸玻璃料的制造方法，通过使用溶液法以低成本获得高可生产性，并且容易地控制太阳能电池电极的尺寸和组成。 构成：纳米尺寸玻璃料的制造方法包括：通过使用溶胶 - 凝胶合成法制造玻璃料纳米粒子的步骤; 以及混合玻璃料纳米颗粒，金属纳米颗粒和有机载体的步骤。 用于太阳能电池的电极包括半导体衬底，形成在衬底上的抗反射膜，通过在导电金属上形成导电油墨而形成的第一导电层和由导电金属形成的第二导电膜 导电层。 （附图标记）（AA）原料; （BB）碱性催化剂; （CC）反应; （DD）洗涤; （EE）玻璃料纳米粒子
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公开(公告)号：KR101255850B1
公开(公告)日：2013-04-17
申请号：KR1020100094200
申请日：2010-09-29
Applicant: 한국화학연구원
Abstract: 본 발명은 변형된 글리콜레이트를 사용한 신규의 갈륨 글리콜레이트 화합물 및 그 제조 방법에 관한 것으로, 하기 화학식 1로 표시되는 갈륨 글리콜레이트 화합물에 관한 것이며, 본 발명에 따른 갈륨 글리콜레이트 화합물은 금속 산화물 박막 및 금속 산화물 나노입자 형성을 위한 전구체로 사용되며, 수분에 덜 민감하고 보관이 용이하며 열적 안정성이 우수한 특성이 있다.
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公开(公告)号：KR101255099B1
公开(公告)日：2013-04-16
申请号：KR1020110020943
申请日：2011-03-09
Applicant: 한국화학연구원
Abstract: 본 발명은 하기 화학식 1로 표시되는 플루오르를 포함하는 알콕사이드 리간드를 갖는 신규의 주석 화합물 및 그 제조 방법에 관한 것이다.
[화학식 1]
Sn[OA-OR
1 ]
2
상기 화학식 1에서,
A, R
1
및 R
2 는 각각 발명의 상세한 설명에서 정의한 바와 같다.
본 발명에 따르는 주석 알콕사이드 화합물은 주석 전구체로서 상온에서 액체 상태로 존재하며 증기압이 매우 높아 주석을 포함하는 물질의 박막의 증착 또는 여러 가지 합금 증착에 주석 원료 물질로 유용하게 사용될 수 있다.
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