公开(公告)号：WO2005017963A2

公开(公告)日：2005-02-24

申请号：PCT/US2004/025130

申请日：2004-08-03

Applicant: ASM AMERICA, INC. ,  WILK, Glen

Inventor： WILK, Glen

IPC: H01L

CPC classification number: H01L21/31658 ,  C23C16/0245 ,  C23C16/0281 ,  C23C16/405 ,  C23C16/45525 ,  H01L21/02178 ,  H01L21/02189 ,  H01L21/0228 ,  H01L21/02312 ,  H01L21/02315 ,  H01L21/28158 ,  H01L21/28194 ,  H01L21/28255 ,  H01L21/3141 ,  H01L21/3145 ,  H01L21/31604 ,  H01L21/31616 ,  H01L21/31637 ,  H01L21/31641 ,  H01L21/31645 ,  H01L29/1054 ,  H01L29/16 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66477

Abstract: Methods are provided for treating germanium surfaces (200) in preparation for subsequent deposition, particularly gate dielectric deposition by atomic layer deposition (ALD). Prior to depositing, the germanium surface (200) is treated with plasma products or thermally reacted with vapor reactants. Examples of surface treatments leave oxygen bridges, nitrogen bridges, -OH, -NH and/or -NH 2 terminations that more readily adsorb ALD reactants. The surface treatments avoid deep penetration of the reactants into the germanium bulk but improve nucleation.

Abstract translation: 提供了用于处理锗表面（200）以准备随后的沉积，特别是通过原子层沉积（ALD）的栅极电介质沉积的方法。 在沉积之前，锗表面（200）用等离子体产物处理或与蒸气反应物热反应。 表面处理的例子留下更容易吸附ALD反应物的氧桥，氮桥，-OH，-NH和/或-NH2端基。 表面处理避免了反应物深入渗入锗块，但改善了成核。

公开(公告)号：WO2005013326A2

公开(公告)日：2005-02-10

申请号：PCT/US2004/023503

申请日：2004-07-21

Applicant: ASM AMERICA, INC. ,  ARENA, Chantal, J. ,  TOMASINI, Pierre ,  CODY, Nyles ,  BAUER, Matthias

Inventor： ARENA, Chantal, J. ,  TOMASINI, Pierre ,  CODY, Nyles ,  BAUER, Matthias

IPC: H01L

CPC classification number: C30B29/06 ,  C30B25/02 ,  C30B29/52 ,  H01L21/0245 ,  H01L21/02494 ,  H01L21/02502 ,  H01L21/02532 ,  H01L21/0262

Abstract: A relaxed silicon germanium structure comprises a silicon buffer layer produced using a chemical vapor deposition process with an operational pressure greater than approximately 1 torr. The relaxed silicon germanium structure further comprises a silicon germanium layer deposited over the silicon buffer layer. The silicon germanium layer has less than about 10 7 threading dislocations per square centimeter. By depositing the silicon buffer layer at a reduced deposition rate, the overlying silicon germanium layer can be provided with a "crosshatch free" surface.

Abstract translation: 松弛的硅锗结构包括使用具有大于约1托的操作压力的化学气相沉积工艺制备的硅缓冲层。 松弛的硅锗结构还包括沉积在硅缓冲层上的硅锗层。 硅锗层每平方厘米具有小于约10 7个穿透位错。 通过以降低的沉积速率沉积硅缓冲层，可以提供覆盖的硅锗层“无交叉阴极线”的表面。

公开(公告)号：WO2004097897A3

公开(公告)日：2004-11-11

申请号：PCT/US2004/012239

申请日：2004-04-21

Applicant: ASM AMERICA, INC. ,  TODD, Michael, A. ,  WEEKS, Keith, D.

Inventor： TODD, Michael, A. ,  WEEKS, Keith, D.

IPC: C23C16/00

Abstract: Methods for controlling the grain structure of a polycrystalline Si-containing film involve depositing the film in stages so that the morphology of a first film layer deposited in an initial stage favorably influences the morphology of a second film layer deposited in a later stage. In an illustrated embodiment, the initial stage includes an anneal step. In another embodiment, the later stage involves depositing the second layer under different deposition conditions than for the first layer.

公开(公告)号：WO2002064853A3

公开(公告)日：2002-08-22

申请号：PCT/US2002/004751

申请日：2002-02-12

Applicant: ASM AMERICA, INC.

Inventor： TODD, Michael, A. ,  RAAIJMAKERS, Ivo

IPC: H01L21/205

Abstract: Thin, smooth silicon-containing films are prepared by deposition methods that utilize trisilane as a silicon source. In preferred embodiments, the methods result in Si-containing films that are continuous and have a thickness of about 150 Å or less, a surface roughness of about 5 Å rms or less, and a thickness non-uniformity of about 20% or less. Preferred silicon-containing films display a high degree of compositional uniformity when doped or alloyed with other elements. Preferred deposition methods provide improved manufacturing efficiency and can be used to make various useful structures such as wetting layers, HSG silicon, quantum dots, dielectric layers, anti-reflective coatings (ARC's), gate electrodes and diffusion sources.

公开(公告)号：WO2016191432A1

公开(公告)日：2016-12-01

申请号：PCT/US2016/033955

申请日：2016-05-24

Applicant: ASM IP HOLDING B.V. ,  ASM AMERICA, INC.

Inventor： SARNET, Tiina ,  HATANPÄÄ, Timo ,  RITALA, Mikko ,  LESKELÄ, Markku

IPC: C23C16/22 ,  H01L21/02 ,  H01L31/18

CPC classification number: C23C16/305 ,  C01G39/06 ,  C01P2004/03 ,  C23C16/45553 ,  G01N30/72 ,  H01L21/02568 ,  H01L21/0262

Abstract: Processes for forming Mo and W containing thin films, such as MoS 2 , WS 2 , MoSe 2 , and WSe 2 thin films are provided. Methods are also provided for synthesizing Mo or W beta-diketonate precursors. Additionally, methods are provided for forming 2D materials containing Mo or W.

Abstract translation: 提供了用于形成包含MoS2，WS2，MoSe2和WSe2薄膜的Mo和W的工艺。 还提供了用于合成Mo或Wβ-二酮前体的方法。 另外，提供了用于形成含有Mo或W的2D材料的方法

公开(公告)号：WO2015094549A2

公开(公告)日：2015-06-25

申请号：PCT/US2014/066310

申请日：2014-11-19

Applicant: ASM IP HOLDING B.V. ,  ASM AMERICA, INC.

Inventor： HAUKKA, Suvi, P. ,  TANG, Fu ,  GIVENS, Michael, E. ,  MAES, Jan, Willem ,  XIE, Qi

IPC: H01L21/02

CPC classification number: H01L21/02568 ,  C23C16/0227 ,  C23C16/305 ,  C23C16/45525 ,  H01L21/02557 ,  H01L21/0262 ,  H01L21/02661 ,  H01L21/28264

Abstract: In some aspects, methods of forming a metal sulfide thin film are provided. According to some methods, a metal sulfide thin film is deposited on a substrate in a reaction space in a cyclical process where at least one cycle includes alternately and sequentially contacting the substrate with a first vapor-phase metal reactant and a second vapor-phase sulfur reactant. In some aspects, methods of forming a three-dimensional architecture on a substrate surface are provided. In some embodiments, the method includes forming a metal sulfide thin film on the substrate surface and forming a capping layer over the metal sulfide thin film. The substrate surface may comprise a high-mobility channel.

Abstract translation: 在一些方面，提供了形成金属硫化物薄膜的方法。 根据一些方法，金属硫化物薄膜以循环方法沉积在反应空间中的基底上，其中至少一个循环包括交替地且顺序地使基底与第一气相金属反应物和第二气相硫 反应物。 在一些方面中，提供了在衬底表面上形成三维结构的方法。 在一些实施例中，该方法包括在基板表面上形成金属硫化物薄膜并在金属硫化物薄膜上形成覆盖层。 衬底表面可以包括高迁移率通道。

公开(公告)号：WO2011103062A2

公开(公告)日：2011-08-25

申请号：PCT/US2011/024762

申请日：2011-02-14

Applicant: ASM AMERICA, INC.

Inventor： SHERO, Eric ,  VERGHESE, Mohith ,  MUSCAT, Anthony ,  MILLER, Shawn

IPC: H01L21/316 ,  H01L21/205

CPC classification number: C23C16/45525 ,  B05D1/32 ,  B05D1/60 ,  B05D5/08 ,  B82Y30/00 ,  C23C16/04 ,  H01L21/02181 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/28194 ,  H01L29/517

Abstract: Methods and structures relating to the formation of mixed SAMs for preventing undesirable growth or nucleation on exposed surfaces inside a reactor are described. A mixed SAM (322) can be formed on surfaces (308) for which nucleation is not desired by introducing a first SAM precursor having molecules of a first length (334) and a second SAM precursor having molecules of a second length (338) shorter than the first. Examples of exposed surfaces for which a mixed SAM (322) can be provided over include reactor surfaces and select surfaces of integrated circuit structures (800), such as insulator and dielectric layers.

Abstract translation: 描述了与形成用于防止反应器内的暴露表面上的不期望的生长或成核的混合SAM相关的方法和结构。 可以通过引入具有第一长度（334）的分子的第一SAM前体和具有第二长度（338）的分子的第二SAM前体，在表面（308）上形成混合的SAM（322） 比第一个。 可以提供混合SAM（322）的暴露表面的实例包括反应器表面和诸如绝缘体和电介质层的集成电路结构（800）的选择表面。

公开(公告)号：WO2011049816A2

公开(公告)日：2011-04-28

申请号：PCT/US2010/052741

申请日：2010-10-14

Applicant: ASM INTERNATIONAL N.V. ,  ASM AMERICA, INC. ,  BLOMBERG, Tom, E. ,  TOIS, Eva, E. ,  HUGGARE, Robert ,  MAES, Jan, Willem ,  MACHKAOUTSAN, Vladimir ,  PIERREUX, Dieter

Inventor： BLOMBERG, Tom, E. ,  TOIS, Eva, E. ,  HUGGARE, Robert ,  MAES, Jan, Willem ,  MACHKAOUTSAN, Vladimir ,  PIERREUX, Dieter

IPC: C23C14/06 ,  C23C14/20 ,  C23C14/02 ,  C23C16/30 ,  C23C16/02 ,  C23C16/44

CPC classification number: C23C16/34 ,  C23C16/36 ,  C23C16/409 ,  C23C16/45531

Abstract: Methods are disclosed herein for depositing a passivation layer comprising fluorine over a dielectric material that is sensitive to chlorine, bromine, and iodine. The passivation layer can protect the sensitive dielectric layer thereby enabling deposition using precursors comprising chlorine, bromine, and iodine over the passivation layer.

Abstract translation: 本文公开了用于在对氯，溴和碘敏感的电介质材料上沉积包含氟的钝化层的方法。 钝化层可以保护敏感介电层，从而使得能够在钝化层上沉积使用包含氯，溴和碘的前体。

公开(公告)号：WO2008060754A1

公开(公告)日：2008-05-22

申请号：PCT/US2007/079335

申请日：2007-09-24

Applicant: ASM AMERICA, INC.

Inventor： WHITE, Carl, L. ,  CURRY, Paul, G.

IPC: F16K7/12

CPC classification number: F16K7/12 ,  C23C16/44 ,  C23C16/45561 ,  F16K25/005

Abstract: A valve (100) comprises a valve seat (102) and a movable diaphragm (104). The valve seat (102) defines a fluid orifice (106) and is formed at least partially of polybenzimidazole. The diaphragm (104) is sized and configured to bear against the fluid orifice (106) to substantially block fluid flow through the orifice (106). The valve (100) is advantageously used in a hot zone (34) of a semiconductor processing system.

Abstract translation: 阀（100）包括阀座（102）和活动隔膜（104）。 阀座（102）限定流体孔口（106）并且至少部分地由聚苯并咪唑形成。 隔膜（104）的尺寸和构造适于承受流体孔口（106），以基本上阻挡流过孔口（106）的流体流动。 阀（100）有利地用于半导体处理系统的热区（34）。

公开(公告)号：WO2008055017A2

公开(公告)日：2008-05-08

申请号：PCT/US2007/081991

申请日：2007-10-19

Applicant: ASM AMERICA, INC. ,  ELERS, Kai-erik

Inventor： ELERS, Kai-erik

CPC classification number: C23C16/45525 ,  C23C16/4554 ,  C23C16/50 ,  H01L21/28088 ,  H01L29/4966 ,  H01L29/517

Abstract: Metallic-compound films are formed by plasma-enhanced atomic layer deposition (PEALD). According to preferred methods, film or thin film composition is controlled by selecting plasma parameters to tune the oxidation state of a metal (or plurality of metals) in the film. In some embodiments, plasma parameters are selected to achieve metal-rich metallic-compound films. The metallic-compound films can be components of gate stacks, such as gate electrodes. Plasma parameters can be selected to achieve a gate stack with a predetermined work function.

Abstract translation: 通过等离子体增强的原子层沉积（PEALD）形成金属化合物膜。 根据优选的方法，通过选择等离子体参数来调节膜中的金属（或多种金属）的氧化态来控制膜或薄膜组合物。 在一些实施例中，选择等离子体参数以获得富含金属的金属化合物膜。 金属化合物膜可以是栅极堆叠的组件，诸如栅极电极。 可以选择等离子体参数来实现具有预定功函数的栅极堆叠。