公开(公告)号：KR20180043294A

公开(公告)日：2018-04-27

申请号：KR20187006952

申请日：2016-07-29

Applicant: AXCELIS TECH INC

Inventor： BAGGET JOHN ,  BERINGER JASON

IPC: H01J37/08 ,  H01J3/04

CPC classification number: H01J37/08 ,  H01J3/04 ,  H01J2237/061 ,  H01J2237/31701

Abstract: 이온소스필라멘트클램프(100)는제1 단부(104)와제2 단부(106)를갖는클램프부재(102)를갖는다. 상기제1 단부는캠 표면(132) 및캠 공이(134) 중하나를가지며, 서로대향하고이온소스필라멘트의리드를수용하기위해규정된리드개구(116)를가지는슬롯(114)에의해분리되는제1 부분(110) 및제2 부분(112)을가진다. 액추에이터핀(120)은액추에이터핀 축(126)을따라연장되고제1(122) 및제2 섹션을가진다. 상기제1 섹션(122)은상기클램프부재의상기제1 부분(110)에결합된다. 상기액추에이터핀은상기클램프부재의상기제2 부분의관통홀(128)을통해연장하고슬라이딩체결된다. 캠부재(108)는상기액추에이터핀 (120)의제2 섹션(124)에작동가능하게결합된다. 상기캠 부재는핸들(130)을가지며, 상기캠 표면(132)과캠 공이(134) 중하나를포함하고클램프위치와언클램프위치사이에서회전하도록구성된다. 상기캠 공이(134)는상기캠 표면(132)과슬라이딩접촉한다. 상기클램프위치에서, 상기캠 공이는제1의미리결정된방식으로상기캠 표면과체결되어상기클램프부재의상기제1 및제2 부분(110, 112)을서로를향해선택적으로압축하고상기리드개구(116) 내의리드에클램핑압력을가하며, 상기클램프부재의상기제1 부분과제2 부분사이에스프링장력을유도한다. 상기언클램프위치에서, 상기캠 공이는제2의미리결정된방식으로상기캠 표면과체결되고, 상기클램프부재의상기제1 및제2 부분(110, 112)을서로이격시켜상기리드개구내의리드에대한클램핑압력을해제한다.

公开(公告)号：KR20200138265A

公开(公告)日：2020-12-09

申请号：KR20207029010

申请日：2019-04-01

Applicant: AXCELIS TECH INC

Inventor： BAGGETT JOHN ,  REECE RONALD ,  KOPALIDIS PETROS

IPC: G01K13/00 ,  H01J37/20 ,  H01J37/317 ,  H01L21/67 ,  H01L21/683 ,  H01L21/687

Abstract: 열척은클램핑표면상에공작물을선택적으로유지한다. 상기열 척은상기클램핑표면과공작물을선택적으로가열하기위한하나이상의히터들을포함한다. 열모니터링장치는공작물이상기클램핑표면상에상주할때 상기공작물의표면의온도를판단하여, 하나이상의측정된온도들을정의한다. 제어기는상기하나이상의측정된온도들에기초하여상기하나이상의히터들에선택적으로에너지를공급한다. 상기열 모니터링장치는상기공작물의상기표면과선택적으로접촉하는열전대또는 RTD 중하나일수 있고, 상기표면과접촉하지않는방사율센서또는파이로미터일수 있다. 상기열 척은상기공작물로이온들을주입하도록구성된이온주입시스템의일부일수 있다. 상기제어기는상기측정된온도들에따라상기히터들을제어하도록추가구성될수 있다.

公开(公告)号：KR20210007999A

公开(公告)日：2021-01-20

申请号：KR20207033837

申请日：2019-05-13

Applicant: AXCELIS TECH INC

Inventor： COLVIN NEIL ,  HSIEH TSEH JEN

IPC: H01J37/08 ,  H01J37/317

Abstract: 이온주입시스템용 터미널시스템은하우징및 하나이상의개구플레이들을가지는추출전극조립체를가지는이온소스를포함한다. 가스박스는상기이온소스에전기적으로연결된다. 가스소스는상기이온소스조립체와실질적으로동일한전위로가스를제공하기위해상기가스박스내에있다. 블리드가스도관은상기이온소스의상기하우징내부영역및 적어도하나의개구플레이트들의상류에가스를도입한다. 상기블리드가스도관은상기이온소스의마운팅플랜지에있는홀과같이상기이온소스조립체의본체를통해연장되는하나이상의피드-스루들을가진다. 상기마운팅플랜지는채널을가지는관형부분일수 있다. 상기블리드가스도관은가스분배링으로정의된가스분배장치를추가포함할수 있다. 상기가스분배링은일반적으로상기마운팅플랜지의상기관형부분을둘러쌀수 있다.

公开(公告)号：KR20080058288A

公开(公告)日：2008-06-25

申请号：KR20077000392

申请日：2007-01-06

Applicant: AXCELIS TECH INC

Inventor： WALDFRIED CARLO ,  ESCORCIA ORLANDO

IPC: H01L21/3105 ,  H01L21/312

CPC classification number: H01L21/76825 ,  H01L21/02282 ,  H01L21/3105 ,  H01L21/324

Abstract: A UV curing process for a dielectric material used in pre-metal and shallow trench isolation applications comprises coating a suitable dielectric material onto a substrate; and exposing the dielectric material to ultraviolet radiation in an amount effective to reduce an organic content and/or increase a density and/or increase a wet etch resistance of the dielectric material. Optionally, the UV cured dielectric material may be exposed to multiple ultraviolet radiation patterns.

Abstract translation: 用于预金属和浅沟槽隔离应用中的电介质材料的UV固化方法包括将合适的介电材料涂覆到基底上; 以及以有效减少有机含量和/或增加密度和/或增加介电材料的耐湿蚀刻性的量将介电材料暴露于紫外线辐射。 任选地，UV固化的介电材料可以暴露于多种紫外线辐射图案。

公开(公告)号：JP2002134049A

公开(公告)日：2002-05-10

申请号：JP2001223303

申请日：2001-07-24

Applicant: AXCELIS TECH INC

Inventor： BIKUTAA MOORISU BENBENISUTE ,  DIVERGILIO WILLIAM FRANK ,  FURANKU SHINKUREA

IPC: G21K5/04 ,  H01J37/05 ,  H01J37/30 ,  H01J37/317 ,  H01J37/32 ,  H01J49/42 ,  H01L21/265

Abstract: PROBLEM TO BE SOLVED: To provide a mass spectrometer, an ion implantation apparatus, and an ion beam sealing method. SOLUTION: The ion implantation apparatus includes a mass spectrometry magnet 114, a power source 174 applying an electric field to a passage 139, and a magnetic apparatus 170 applying a multi-cusp magnetic field to the passage 139. The power source 174 and the magnetic apparatus 170 collaborate each other in giving an electron cyclotron resonance(ECR) condition at lease along a part of the passage 139. The mult-cusp magnetic field is polymerized with a dipole magnetic field and interacts with an electric field of RF or a microwave. A waveguide to improve ECR condition is also included. A beam plasma is enhanced in the dipole magnetic field of the mass spectrometer without a plasma generated outside. Moreover, the ion beam is sealed in the low- energy ion implantation apparatus.

公开(公告)号：JP2002117780A

公开(公告)日：2002-04-19

申请号：JP2001233658

申请日：2001-08-01

Applicant: AXCELIS TECH INC

Inventor： HORSKY THOMAS N ,  TOMY DALE HOLLINGSWORTH

IPC: C23C14/48 ,  H01J27/12 ,  H01J27/20 ,  H01J37/08 ,  H01J37/317 ,  H01J37/36 ,  H01L21/265

Abstract: PROBLEM TO BE SOLVED: To provide an ion source for an ion implantation device for containing a solid material source for sputtering and minimizing influence of the change of this material source. SOLUTION: This ion source 10 is partially divided by a wall 12, and has an ionizing chamber 14 having an inlet 45 to which gas for sputtering is injected and an opening 18 from which an ion beam is derived, an electron source 44 to ionize the gas for sputtering in order to form sputtering plasma, and a repeller 100 to supply a material source sputtered by reflecting an electron discharged by the electron source and being ionized by the electron source. The repeller 100 is negatively biased with respect to the wall 12, and contains a slug of sputtable material, and a mounting structure to mount the slug in the ionizing chamber 14, and can continuously give variable bias to give the wide dynamic range of an ion beam current.

公开(公告)号：JP2002057146A

公开(公告)日：2002-02-22

申请号：JP2001128061

申请日：2001-04-25

Applicant: AXCELIS TECH INC

Inventor： KINNARD DAVID W

IPC: H05H1/46 ,  B01J19/08 ,  C23C16/44 ,  C23C16/455 ,  C25D11/04 ,  G03F7/42 ,  H01J37/32 ,  H01L21/027 ,  H01L21/302 ,  H01L21/3065

Abstract: PROBLEM TO BE SOLVED: To provide a plasma processing chamber and a baffle plate assembly for forming a laminar flow of activated gas which crosses a surface of a processing substrate in a plasma processing device. SOLUTION: A plasma processing chamber 10 comprises an inner chamber 20 for wafer processing formed of a pall 38 with a top wall 17, a lower baffle plate 16 which is disposed adjacent to the inner chamber 20 for dispersing activated gas and is almost flat and a baffle plate assembly 12 including an upper baffle plate 14 which is fixed and disposed above the plate 16 and is almost flat. A plenum is formed between the top wall 17 and the lower baffle plate 16. The plenum works under a higher pressure than the inner chamber 20 during operation of the plasma processing chamber 10 and the lower baffle plate 16 has a pattern of an opening 30 formed to enable gas to be supplied into an inner chamber through a plenum.

公开(公告)号：JP2001210629A

公开(公告)日：2001-08-03

申请号：JP2000358026

申请日：2000-11-24

Applicant: AXCELIS TECH INC

Inventor： JANOS ALAN CHARLES ,  CARDOSO ANDRE G ,  RICHARDSON DANIEL BRIAN

IPC: G03F7/42 ,  H01J37/32 ,  H01L21/027 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/66

Abstract: PROBLEM TO BE SOLVED: To provide a wafer treatment system which is monitored selectively and a monitoring method for the wafer treatment processes. SOLUTION: A wafer treatment system includes a wafer treatment chamber 22 which includes support bodies which arrange the wafer in an internal region of the treatment chamber 22, a wafer treatment mechanism including a means in which the plasma is transferred into the treatment chamber 22 to eliminate a membrane from as exposed surface 136 of the wafer, and a light-receiving device 140 which is equipped in the treatment chamber 22 to monitor densities of the plasma which is focused near the wafer surface and a reaction product of the membrane. To optimize an optical detecting device 110 for ashing terminal point detecting using a spectrometer, the point of completion terminal is recognized by monitoring the densities of the plasma on the wafer surface and the product of the membrane, by correcting the light from the region, having the strongest light.

公开(公告)号：JP2001135253A

公开(公告)日：2001-05-18

申请号：JP2000306128

申请日：2000-10-05

Applicant: AXCELIS TECH INC

Inventor： HORSKY THOMAS N ,  PEREL ALEXANDER STUART ,  LOIZIDES WILLIAM KEITH

IPC: H01J37/30 ,  H01J27/08 ,  H01J27/16 ,  H01J37/08 ,  H01J37/317

Abstract: PROBLEM TO BE SOLVED: To provide an ion source and ionizer that ionize decaborane sufficiently accurately and controllably. SOLUTION: This ion source 50 includes an evaporator 51, that accepts solid ion source material like decaborane, an ionizer 53 connected to the evaporator via a supply tube 62, and a heating medium 70 that heats the evaporator and supply tube to maintain the temperature of evaporated decarborane at an optimum value. The ionizer 53 is equipped with a main body, an ion chamber in which decarborane is ionized by an energy-emitting element that produce a plasma, an exit aperture through which an ion beam is extracted, and a cooling mechanism to lower temperature on the wall face of the ion chamber. The energy-emitting element functions at a low output level to prevent additional dissociation of decaborane molecules evaporated by the plasma itself, by minimizing the plasma density in the ion chamber.

公开(公告)号：JP2002110080A

公开(公告)日：2002-04-12

申请号：JP2001223304

申请日：2001-07-24

Applicant: AXCELIS TECH INC

Inventor： BIKUTAA MOORISU BENBENISUTE ,  YE JOHN ,  DIVERGILIO WILLIAM FRANK

IPC: G21K5/04 ,  H01J37/05 ,  H01J37/317 ,  H01L21/265 ,  H01P11/00

Abstract: PROBLEM TO BE SOLVED: To provide an ion implantation device, a waveguide and a mass analyzer therefor, and a method of distributing microwave output to a beam guide of the mass analyzer. SOLUTION: The ion implantation device according to the invention comprises a beam guide 200 of mass analysis magnet, a power source for providing electric field, and a magnetic device 170 providing a multicusped magnetic field and having multiple magnets 220. The power source and the magnets 220 interact with each other and cause resonance of an electron cyclotron along a passage. The multicusped magnetic field is superimposed on the dipole field at a specified field strength in the passage of the mass analyzer where it interacts with the electric field of RF or microwaves. The waveguide 250 according to the invention combines the electric field with beam plasma along the passage of the mass analyzer, thereby improving the ECR status. In the invention, beam plasma is enhanced in the dipole field of the mass analyzer for low-energy ion beams, without introducing plasma generated outside.