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    기화 장치 및 처리 장치
    14.
    发明授权
    기화 장치 및 처리 장치 失效
    기화장치및처리장치

    公开(公告)号：KR100908145B1

    公开(公告)日：2009-07-16

    申请号：KR1020077016041

    申请日：2006-01-13

    Applicant: 도쿄엘렉트론가부시키가이샤

    Inventor： 고지마야스히코 ,  호시노도모히사

    IPC: C23C16/448

    CPC classification number: C23C16/4482 ,  C23C16/18

    Abstract: 본 발명은 압송되어 오는 액체 원료를 감압 분위기 중에서 기화시켜서 원료 가스를 발생시켜, 이 원료 가스를 캐리어 가스와 함께 내보내는 기화 장치에 있어서,
    압송되어 오는 액체 원료를 일시적으로 저류하는 액체 저장실과,
    상기 액체 저장실에 밸브구를 거쳐서 연통하는 기화실과,
    상기 밸브구를 구획하는 밸브시트에 상기 액체 저장실의 측에서 착석하는 밸브체와,
    상기 밸브체를 구동하는 액츄에이터와,
    상기 밸브구를 향하는 상기 밸브체의 위치에 마련된 캐리어 가스 분사구와,
    상기 기화실 내의 원료 가스를 배출하는 배출구,
    를 구비한 것을 특징으로 하는 기화 장치이다. 캐리어 가스 분사구의 특정한 배치에 근거하여, 기화 장치의 밸브구보다 하류측에 미기화 액체 원료가 잔류하는 것이 방지된다.

    Abstract translation: 汽化器在减压的气氛中汽化强制供给的液体源材料以产生源气体并将源气体与载气一起排出。 蒸发器包括用于暂时储存强制供给的液体源材料的液体储存室; 以及经由阀口与储液室连通的汽化室。 此外，蒸发器包括适于放置在围绕液体储存室的阀口的阀座上的阀体; 致动器，用于驱动阀体; 形成在所述阀体的面对所述阀口的一侧的载气注入孔; 以及用于从蒸发室排出源气体的排出口。 通过载体气体注入孔的特定布置，防止液体源材料在阀端口的下游侧保持未汽化。

    반도체장치의 제조 방법, 반도체장치의 제조 장치, 컴퓨터 프로그램 및 기억 매체
    15.
    发明公开
    반도체장치의 제조 방법, 반도체장치의 제조 장치, 컴퓨터 프로그램 및 기억 매체 失效
    半导体器件制造方法，半导体器件制造设备，计算机程序和存储介质

    公开(公告)号：KR1020090031582A

    公开(公告)日：2009-03-26

    申请号：KR1020097001198

    申请日：2007-06-15

    Applicant: 도쿄엘렉트론가부시키가이샤

    Inventor： 고지마야스히코 ,  이케다다로 ,  하타노다츠오

    IPC: H01L21/3205 ,  H01L21/285 ,  H01L21/324 ,  H01L23/52

    CPC classification number: H01L21/28556 ,  C23C16/0281 ,  C23C16/18 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76858 ,  H01L21/76867 ,  H01L21/76877

    Abstract: A semiconductor device, which suppresses formation of an organic impurity layer and has excellent adhesiveness to a copper film and a metal to be a base, is manufactured. A substrate (wafer (W)) coated with a barrier metal layer (13) (base film) composed of a metal having a high oxidative tendency, such as titanium, is placed in a processing chamber. At the time of starting to supply water vapor or after that, a material gas composed of an organic compound of copper (for instance, Cu(hfac)TMVS) is supplied, and a copper film is formed on the surface of the barrier metal layer (13) whereupon the oxide layer (13a) is formed by the water vapor. Then, heat treatment is performed to the wafer (W), and the oxide layer (13a) is converted into an alloy layer (13b) of a metal and copper which constitute the barrier metal layer (13).

    Abstract translation: 制造抑制有机杂质层的形成并且对铜膜和作为基底的金属具有优异的粘附性的半导体器件。 在处理室中放置涂覆有由氧化倾向高的金属构成的阻挡金属层（13）（基膜）的基板（晶片（W）），例如钛。 在开始供给水蒸气之后，供给由铜的有机化合物（例如Cu（hfac）TMVS）构成的原料气体，在阻挡金属层的表面上形成铜膜 （13），由此氧化物层（13a）由水蒸气形成。 然后，对晶片（W）进行热处理，将氧化物层（13a）转换成构成阻挡金属层（13）的金属和铜的合金层（13b）。

    성막 방법 및 성막 장치 및 기억 매체
    17.
    发明公开
    성막 방법 및 성막 장치 및 기억 매체 失效
    成膜方法，成膜装置和储存介质

    公开(公告)号：KR1020070073947A

    公开(公告)日：2007-07-10

    申请号：KR1020077012057

    申请日：2005-11-29

    Applicant: 도쿄엘렉트론가부시키가이샤

    Inventor： 요시이나오키 ,  고지마야스히코

    IPC: H01L21/285 ,  H01L21/203 ,  H01L21/205

    CPC classification number: C23C14/165 ,  C23C10/02 ,  C23C10/06 ,  C23C14/0057 ,  C23C14/14 ,  C23C14/345 ,  C23C26/00 ,  H01J37/34 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76873

    Abstract: Even in the application of a highly cohesive metal to a surface of treatment object having recesses of high aspect ratio, a continuous thin-film can be formed. There is provided a method of forming a film, comprising the step of carrying a substrate in a reaction chamber and mounting the same, the step of feeding a raw gas containing a compound of first metal into the reaction chamber to thereby cause the surface of the substrate to adsorb the compound of first metal, the step of bringing the compound of first metal into contact with a reducing plasma resulting from activation of a reducing gas to thereby obtain a first metal layer and the step of bringing a target electrode whose at least surface portion consists of a second metal different from the first metal into contact with a sputtering plasma and incorporating the thus ejected second metal into the first metal layer to thereby obtain an alloy layer, wherein this sequence of adsorption, reduction and alloy formation steps is carried out one or more times. By virtue of this method, even when the cohesive force of the first metal is large, any migration thereof on the substrate is suppressed to thereby realize formation of a continuous thin film of small thickness.

    Abstract translation: 即使在将高粘结性金属施加到具有高纵横比的凹槽的处理对象的表面上，也可以形成连续的薄膜。 提供一种形成膜的方法，包括在反应室中载置基板并安装其的步骤，将含有第一金属化合物的原料气体进料到反应室中从而使得 用于吸附第一金属化合物的底物，使第一金属的化合物与还原气体的活化还原的等离子体接触从而获得第一金属层的步骤，以及使至少具有表面 部分由不同于第一金属的第二金属组成，与溅射等离子体接触并将如此喷射的第二金属合并到第一金属层中，从而获得合金层，其中执行吸附，还原和合金形成步骤的这一顺序 一次或多次 通过该方法，即使在第一金属的内聚力大的情况下，也能够抑制基板上的迁移，从而形成厚度薄的连续薄膜。

    구리막의 성막 방법
    18.
    发明公开
    구리막의 성막 방법 失效
    形成铜膜的方法

    公开(公告)号：KR1020060114378A

    公开(公告)日：2006-11-06

    申请号：KR1020067017675

    申请日：2005-02-25

    Applicant: 도쿄엘렉트론가부시키가이샤

    Inventor： 고지마야스히코 ,  요시이나오키

    IPC: H01L21/205

    CPC classification number: H01L21/28562 ,  C23C16/18 ,  C23C16/452 ,  C23C16/45529 ,  C23C16/45553

    Abstract: Disclosed is a method for forming a copper film wherein a gas obtained by gasifying a copper carboxylate complex having high vapor pressure and good wetting property to a base or a derivative thereof is used as a raw material gas, and H2 is used as a reducing gas. In this method, a Cu film is formed on a substrate through an ALD (Atomic Layer Deposition) process wherein a step for having the substrate adsorb the raw material gas and another step for forming a Cu film by reducing the adsorbed raw material gas with the reducing gas are repeated. With this method, there can be formed a conformal Cu thin film having good film properties.

    Abstract translation: 公开了一种形成铜膜的方法，其中使用通过气化具有高蒸气压和对基体或其衍生物具有良好润湿性的羧酸铜络合物获得的气体作为原料气体，并且使用H 2作为还原气体 。 在这种方法中，通过ALD（原子层沉积）方法在基板上形成Cu膜，其中使基板吸附原料气体的步骤和通过减少吸附的原料气体形成Cu膜的步骤 重复减少气体。 通过这种方法，可以形成具有良好膜特性的共形Cu薄膜。

    성막 방법, 반도체 장치의 제조 방법, 반도체 장치 및 성막장치
    20.
    发明公开
    성막 방법, 반도체 장치의 제조 방법, 반도체 장치 및 성막장치 失效
    沉积膜的工艺，制造半导体器件的工艺，用于沉积膜的半导体器件和系统

    公开(公告)号：KR1020060016814A

    公开(公告)日：2006-02-22

    申请号：KR1020057024111

    申请日：2004-04-27

    Applicant: 도쿄엘렉트론가부시키가이샤

    Inventor： 이시자카다다히로 ,  오시마야스히로 ,  요시이나오키 ,  시게오카다카시 ,  가와무라고헤이 ,  후쿠다유키오 ,  고지마야스히코

    IPC: H01L21/20

    CPC classification number: C23C16/34 ,  C23C16/45529 ,  C23C16/45542 ,  H01L21/28562 ,  H01L21/76846 ,  H01L21/7685 ,  H01L2221/1078

    Abstract: A process for depositing a film on a substrate being processed placed in a processing container, comprising a first film deposition step repeating a first step for supplying a first material gas of organic metal compound containing no halogen element into the processing container and then removing the first material gas from the inside of the processing container and a second step for supplying a second material gas containing hydrogen or a hydrogen compound into the processing container and then removing the second material gas from the inside of the processing container, and a second film deposition step repeating a third step for supplying a third material gas of metal halide into the processing container and then removing the third material gas from the substrate being processed and a fourth step for supplying a fourth material gas containing hydrogen or a hydrogen compound into the processing container and then removing the fourth material gas from the inside of the processing container.

    Abstract translation: 一种用于在被处理的基板上沉积薄膜的方法，放置在处理容器中，包括第一薄膜沉积步骤，重复第一步骤，用于将不含卤素元素的有机金属化合物的第一原料气体供应到处理容器中， 从处理容器的内部的原料气体和向处理容器供给含有氢或氢化合物的第二原料气体，然后从处理容器的内部除去第二原料气体的第二工序，以及第二成膜工序 重复第三步骤，将金属卤化物的第三原料气体供应到处理容器中，然后从被处理的基板中除去第三原料气体;第四步骤，将含有氢或氢化合物的第四材料气体供应到处理容器中， 然后从处理配件的内部去除第四原料气体 TAINER。

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