公开(公告)号：DE102020108192A1

公开(公告)日：2021-03-04

申请号：DE102020108192

申请日：2020-03-25

Applicant: ASML NETHERLANDS BV ,  ZEISS CARL SMT GMBH

Inventor： SCHMITT JAN ,  LOOPSTRA ERIK

IPC: G02B5/18 ,  B81C1/00 ,  C03C17/27 ,  G03F7/20

Abstract: Die Erfindung betrifft ein Verfahren zum Herstellen eines diffraktiven optischen Elements (110, 320) mit einem Bereitstellen eines Substrats (104), wobei das Substrat (104) eine Basisschicht (100) und mindestens eine auf der Basisschicht (100) angeordnete Zusatzschicht (102) aufweist, wobei die Zusatzschicht (102) aus einem vorgebbaren Schichtmaterial gebildet ist, sowie einem Erzeugen von diffraktiven Strukturen (108) in mindestens in einer Zusatzschicht (102) des Substrats (108) durch abschnittsweise chemische Veränderung des Schichtmaterials. Die chemische Veränderung erfolgt derart, dass die Brechzahl des chemisch veränderten Schichtmaterials sich von der Brechzahl des chemisch unveränderten Schichtmaterials unterscheidet. Weiterhin betrifft die Erfindung ein diffraktives optisches Element (110, 320).

公开(公告)号：NL2011306A

公开(公告)日：2014-03-12

申请号：NL2011306

申请日：2013-08-15

Applicant: ASML NETHERLANDS BV

Inventor： BANINE VADIM ,  WAGNER CHRISTIAN ,  LOOPSTRA ERIK ,  YAKUNIN ANDREI

IPC: G03F7/20 ,  H05G2/00

公开(公告)号：NL2011760A

公开(公告)日：2014-01-13

申请号：NL2011760

申请日：2013-11-08

Applicant: ASML NETHERLANDS BV ,  ZEISS CARL SMT GMBH

Inventor： LOOPSTRA ERIK ,  BEERENS RUUD ,  BIELING STIG ,  CADEE THEODORUS PETRUS MARIA ,  DONDERS SJOERD ,  FRIJNS OLAV ,  KEMPEN ANTONIUS ,  SCHEEPERS MARCUS ,  STRUYCKEN ALEXANDER ,  KATE NICOLAAS ,  LIESHOUT RICHARD HENRICUS ADRIANUS ,  VANDERHALLEN IVO

IPC: G03F7/20 ,  H05G2/00

公开(公告)号：NL2010176A

公开(公告)日：2013-08-26

申请号：NL2010176

申请日：2013-01-24

Applicant: ASML NETHERLANDS BV

Inventor： KOEK WOUTER ,  BLEEKER ARNO ,  LOOPSTRA ERIK ,  MULDER HEINE ,  ZWET ERWIN ,  SMEETS DRIES ,  EBELING ROBERT

IPC: G03F7/20

公开(公告)号：NL2010103A

公开(公告)日：2013-07-18

申请号：NL2010103

申请日：2013-01-10

Applicant: ASML NETHERLANDS BV

Inventor： LOOPSTRA ERIK ,  DONDERS SJOERD ,  ZAAL KOEN ,  CADEE THEODORUS

IPC: G03F7/20 ,  H01L21/68

公开(公告)号：NL2009979A

公开(公告)日：2013-07-15

申请号：NL2009979

申请日：2012-12-13

Applicant: ASML NETHERLANDS BV

Inventor： LOOPSTRA ERIK ,  HOEKS MARTINUS

IPC: G03F7/20

公开(公告)号：NL2009761A

公开(公告)日：2013-05-30

申请号：NL2009761

申请日：2012-11-06

Applicant: ASML NETHERLANDS BV

Inventor： TINNEMANS PATRICIUS ,  BLEEKER ARNO ,  LOOPSTRA ERIK

IPC: G03F7/20

Abstract: The invention relates to intensity values for a plurality of beams used to irradiate a plurality of locations on a target are determined with reference to the position and/or rotation of the locations. Also provided is an associated lithographic or exposure apparatus, an associated device manufacturing method and an associated computer program.

公开(公告)号：NL2009222A

公开(公告)日：2013-03-04

申请号：NL2009222

申请日：2012-07-24

Applicant: ASML NETHERLANDS BV

Inventor： BLEEKER ARNO ,  LOOPSTRA ERIK ,  SCHOOT HARMEN ,  PHILIPS DANNY ,  BEERENS RUUD

IPC: G03F7/20

Abstract: A lithographic apparatus having a programmable patterning device and a projection system. The programmable patterning device is configured to provide a plurality of radiation beams. The projection system has a lens group array configured to project the plurality of radiation beams onto a substrate. The projection system further includes a focus adjuster in an optical path corresponding to a lens group of the lens group array. The focus adjuster has an optical element having substantially zero optical power.

公开(公告)号：AT544096T

公开(公告)日：2012-02-15

申请号：AT09169802

申请日：2009-09-09

Applicant: ASML NETHERLANDS BV

Inventor： SCHIMMEL HENDRIKUS ,  BANINE VADIM ,  LOOPSTRA ERIK

IPC: G03F7/20 ,  H05G2/00

Abstract: A radiation source for generation of extreme ultraviolet radiation or use in high resolution lithography includes a plasma formation site where fuel is contacted by a radiation beam to form a plasma (12) generating EUV radiation. A mirrored collector (10) collects and reflects the EUV radiation generated at a first focus towards a second focus (F2). A contamination barrier (20) is positioned such the periphery of the contamination barrier does not occlude more than 50% of the solid angle subtended by the mirror at the second focus, such that EUV radiation reflected by the collector mirror is not excessively attenuated by passing through the contamination barrier. The contamination barrier serves to trap fuel material such as ions, atoms, molecules or nanodroplets from the plasma to prevent their deposition onto the collector mirror where they reduce the mirror's effective lifetime. Gas extraction ports may be provided near the plasma formation site to suppress diffusion of fuel debris and contamination towards the collector mirror.

公开(公告)号：SG173857A1

公开(公告)日：2011-09-29

申请号：SG2011061553

申请日：2010-02-25

Applicant: ASML NETHERLANDS BV

Inventor： LOOPSTRA ERIK ,  VAN INGEN SCHENAU KOEN ,  VAN SCHOOT JAN ,  WAGNER CHRISTIAN ,  DE VRIES GOSSE

Abstract: Provided is an illumination system of a lithographic apparatus, the illumination system having a plurality of reflective elements arranged to receive radiation from a radiation source, the reflective elements being movable between different orientations. In the different orientations the reflective elements direct radiation towards different locations at a reflective component in a pupil plane of the illumination system, thereby forming different illumination modes. Each reflective element is moveable between a first orientation which directs radiation towards a first location the pupil plane and a second orientation which directs radiation towards a second location in the pupil plane, the first orientation and the second orientation of the reflective element being defined by end stops.