公开(公告)号：US20230129560A1

公开(公告)日：2023-04-27

申请号：US17970437

申请日：2022-10-20

Applicant: EPISTAR CORPORATION

Inventor： Yao-Ru CHANG ,  Yi HSIAO ,  Sheng-Feng KUO ,  Wei-Chu LIAO ,  Shih-Chang LEE

IPC: H01L33/62 ,  H01L33/38

Abstract: A semiconductor device is provided, which includes an epitaxial structure, an electrode pad, and a contact region. The epitaxial structure includes a geometric center, a first surface and a second surface opposite to the first surface. The electrode pad is on the first surface. The contact region is on the second surface and includes a first group and a second group. The first group includes a plurality of first contact portions separated from each other and is arranged in a first ring shape. The second group includes a plurality of second contact portions separated from each other and is arranged in a second ring shape. A second distance between each of the plurality of second contact portions and the geometric center is greater than a first distance between each of the plurality of first contact portions and the geometric center.

公开(公告)号：US20190229233A1

公开(公告)日：2019-07-25

申请号：US16374282

申请日：2019-04-03

Applicant: EPISTAR CORPORATION

Inventor： Cheng-Feng YU ,  Ching-Yuan TSAI ,  Yao-Ru CHANG ,  Hsin-Chan CHUNG ,  Shih-Chang LEE ,  Wen-Luh LIAO ,  Cheng-Hsing CHIANG ,  Kuo-Feng HUANG ,  Hsu-Hsuan TENG ,  Hung-Ta CHENG ,  Yung-Fu CHANG

IPC: H01L33/06 ,  H01L33/42 ,  H01L33/00 ,  H01L33/30 ,  H01L33/64 ,  H01L33/62 ,  H01L33/60 ,  H01L33/46

Abstract: A light-emitting device is provided. The light-emitting device comprises a substrate; an insulating layer on the substrate, wherein the insulating layer comprises a first hole; a light-emitting stack on the insulating layer and comprising an active region comprising a top surface, wherein the top surface comprises a first part and a second part; and an opaque layer covering the first part of the top surface and exposing the second part of the top surface, wherein the second part is directly above the first hole.

公开(公告)号：US20150222094A1

公开(公告)日：2015-08-06

申请号：US14173650

申请日：2014-02-05

Applicant: Epistar Corporation

Inventor： Shih-Chang LEE ,  Chih-Chiang LU ,  Yi-Hung LIN ,  Wu-Tsung LO ,  Ta-Chuan KUO

IPC: H01S5/42 ,  H01S5/343 ,  H01S5/183 ,  H01S5/042

CPC classification number: H01S5/423 ,  H01S5/02276 ,  H01S5/0425 ,  H01S5/18313 ,  H01S5/18333 ,  H01S5/18338 ,  H01S5/1835

Abstract: A light-emitting array comprises a plurality of light-emitting elements, wherein each of the plurality of light-emitting elements comprises a first semiconductor stack; and a plurality of bridge structures connected to the plurality of light-emitting elements, wherein the plurality of light-emitting elements are spaced apart by the plurality of bridge structures, wherein each of the plurality of bridge structures comprise a second semiconductor stack which has the same epitaxial stack as the first semiconductor stack.

Abstract translation: 发光阵列包括多个发光元件，其中所述多个发光元件中的每一个包括第一半导体叠层; 以及连接到所述多个发光元件的多个桥结构，其中所述多个发光元件被所述多个桥结构间隔开，其中所述多个桥结构中的每一个包括第二半导体堆叠，所述第二半导体堆叠具有 与第一半导体堆叠相同的外延堆叠。

公开(公告)号：US20140134783A1

公开(公告)日：2014-05-15

申请号：US14161255

申请日：2014-01-22

Applicant: EPISTAR CORPORATION

Inventor： Rong-Ren LEE ,  Yung-Szu SU ,  Shih-Chang LEE

IPC: H01L31/18

CPC classification number: H01L31/18 ,  H01L31/0725 ,  Y02E10/50

Abstract: This application is related to a method of manufacturing a solar cell device comprising providing a substrate comprising Ge or GaAs; forming a first tunnel junction on the substrate, wherein the first tunnel junction comprises a first n-type layer comprising InGaP:Te, and a first alloy layer comprising AlxGa(1-x)As and having a lattice constant; adding a material into the first alloy layer to change the lattice constant; and forming a first p-n junction on the first tunnel junction.

Abstract translation: 本申请涉及制造太阳能电池器件的方法，该方法包括提供包括Ge或GaAs的衬底; 在所述衬底上形成第一隧道结，其中所述第一隧道结包括包含InGaP：Te的第一n型层和包含Al x Ga（1-x）As并具有晶格常数的第一合金层; 向第一合金层中加入材料以改变晶格常数; 以及在所述第一隧道结上形成第一p-n结。

公开(公告)号：US20250015246A1

公开(公告)日：2025-01-09

申请号：US18893462

申请日：2024-09-23

Applicant: EPISTAR CORPORATION

Inventor： Yu-Tsu LEE ,  Yi-Yang CHIU ,  Chun-Wei CHANG ,  Min-Hao YANG ,  Wei-Jen HSUEH ,  Yi-Ming CHEN ,  Shih-Chang LEE ,  Chung-Hao WANG

IPC: H01L33/62 ,  H01L33/10 ,  H01L33/30 ,  H01L33/38

Abstract: A semiconductor device is provided, which includes an active region, a first semiconductor layer, a first metal element-containing structure, a first p-type or n-type layer, a second semiconductor layer and an insulating layer. The active region has a first surface and a second surface. The first semiconductor layer is at the first surface. The first metal element-containing structure covers the first semiconductor layer and comprising a first metal element. The first p-type or n-type layer is between the first semiconductor layer and the first metal element-containing structure. The second semiconductor layer is between the first semiconductor layer and the first p-type or n-type layer. The insulating layer covers a portion of the first semiconductor layer and a portion of the second semiconductor. The first p-type or n-type layer includes an oxygen element (O) and a second metal element and has a thickness less than or equal to 20 nm.

公开(公告)号：US20220302360A1

公开(公告)日：2022-09-22

申请号：US17203402

申请日：2021-03-16

Applicant: EPISTAR CORPORATION

Inventor： Yu-Tsu LEE ,  Yi-Yang CHIU ,  Chun-Wei CHANG ,  Min-Hao YANG ,  Wei-Jen HSUEH ,  Yi-Ming CHEN ,  Shih-Chang LEE ,  Chung-Hao WANG

IPC: H01L33/62 ,  H01L33/38 ,  H01L33/10 ,  H01L33/30

Abstract: A semiconductor device is provided, which includes a semiconductor stack and a first contact structure. The semiconductor stack includes an active layer and has a first surface and a second surface. The first contact structure is located on the first surface and includes a first semiconductor layer, a first metal element-containing structure and a first p-type or n-type layer. The first metal element-containing structure includes a first metal element. The first p-type or n-type layer physically contacts the first semiconductor layer and the first metal element-containing structure. The first p-type or n-type layer includes an oxygen element (O) and a second metal element and has a thickness less than or equal to 20 nm, and the first semiconductor layer includes a phosphide compound or an arsenide compound.

公开(公告)号：US20220059717A1

公开(公告)日：2022-02-24

申请号：US17510522

申请日：2021-10-26

Applicant: EPISTAR CORPORATION

Inventor： Yi-Chieh LIN ,  Shiuan-Leh LIN ,  Yung-Fu CHANG ,  Shih-Chang LEE ,  Chia-Liang HSU ,  Yi HSIAO ,  Wen-Luh LIAO ,  Hong-Chi SHIH ,  Mei-Chun LIU

IPC: H01L31/167 ,  H01L31/0304 ,  H01L31/0232 ,  H01L31/02 ,  H01L25/16 ,  A61B5/024 ,  A61B5/021 ,  A61B5/1455 ,  A61B5/145 ,  G01J3/10

Abstract: This disclosure discloses an optical sensing device. The device includes a carrier body having a topmost surface; a first light-emitting device disposed on the carrier body and having a light-emitting surface; and a light-receiving device comprising a group III-V semiconductor material disposed on the carrier body and having a light-receiving surface. The light-emitting surface is separated from the topmost surface by first distant H1, the light-receiving surface is separated from the topmost surface by a second distance H2, and H1 is different from H2.

公开(公告)号：US20190081213A1

公开(公告)日：2019-03-14

申请号：US16128604

申请日：2018-09-12

Applicant: EPISTAR CORPORATION

Inventor： Yung-Fu CHANG ,  Hsin-Chan CHUNG ,  Hung-Ta CHENG ,  Wen-Luh LIAO ,  Shih-Chang LEE ,  Chih-Chiang LU ,  Yi-Ming CHEN ,  Yao-Ning CHAN ,  Chun-Fu TSAI

IPC: H01L33/38 ,  H01L33/30

CPC classification number: H01L33/38 ,  H01L33/30

Abstract: A semiconductor device includes a semiconductor stack comprising a surface, and an electrode structure comprises an electrode pad formed on the surface, and the electrode structure further comprises a first extending electrode, a second extending electrode and a third extending electrode connecting to the electrode pad. The first extending electrode is closer to a periphery of the surface than the third extending electrode is, and the second extending electrode is between the first extending electrode and the third extending electrode. From a top view of the semiconductor device, the first extending electrode, the second extending electrode and the third extending electrode respectively include a first curve having a first angle θ1, a second curve having a second angle θ2 and a third curve having a third angle θ3, wherein θ3>θ2>θ1 ∘

公开(公告)号：US20170194532A1

公开(公告)日：2017-07-06

申请号：US15467679

申请日：2017-03-23

Applicant: EPISTAR CORPORATION

Inventor： Chun-Yu LIN ,  Yi-Ming Chen ,  Shih-Chang LEE ,  Yao-Ning Chan ,  Tzu-Chieh Hsu

IPC: H01L33/38 ,  H01L33/44 ,  H01L33/06 ,  H01L33/42 ,  H01L33/22 ,  H01L33/40

CPC classification number: H01L33/387 ,  H01L33/06 ,  H01L33/22 ,  H01L33/38 ,  H01L33/405 ,  H01L33/42 ,  H01L33/44 ,  H01L2933/0016 ,  H01L2933/0025

Abstract: The present disclosure provides an optoelectronic device comprising a semiconductor stack comprising a first side having a first length; a first contact layer on the semiconductor stack; and a second contact layer on the semiconductor stack opposite to the first contact layer, wherein the second contact layer is not overlapped with the first contact layer in a vertical direction; and wherein the second contact layer comprises multiple contact regions separated from each other and arranged in a two-dimensional array, wherein a first distance between the two adjacent contact regions is between 0.8% and 8% of the first length.

公开(公告)号：US20160336478A1

公开(公告)日：2016-11-17

申请号：US15219788

申请日：2016-07-26

Applicant: EPISTAR CORPORATION

Inventor： Rong-Ren LEE ,  Yung-Szu SU ,  Shih-Chang LEE

IPC: H01L31/18 ,  H01L31/0725

CPC classification number: H01L31/18 ,  H01L31/0725 ,  Y02E10/50

Abstract: This application is related to a method of manufacturing a solar cell device comprising providing a substrate comprising Ge or GaAs; forming a first tunnel junction on the substrate, wherein the first tunnel junction comprises a first n-type layer comprising InGaP:Te, and a first alloy layer comprising AlxGa(1−x)As and having a lattice constant; adding a material into the first alloy layer to change the lattice constant; and forming a first p-n junction on the first tunnel junction.

Abstract translation: 本申请涉及制造太阳能电池器件的方法，该方法包括提供包括Ge或GaAs的衬底; 在所述衬底上形成第一隧道结，其中所述第一隧道结包括包含InGaP：Te的第一n型层和包含Al x Ga（1-x）As并具有晶格常数的第一合金层; 向第一合金层中加入材料以改变晶格常数; 以及在所述第一隧道结上形成第一p-n结。