公开(公告)号：US20170117450A1

公开(公告)日：2017-04-27

申请号：US15401710

申请日：2017-01-09

Applicant: EPISTAR CORPORATION

Inventor： Shih-I CHEN ,  Chia-Liang HSU ,  Tzu-Chieh HSU ,  Han-Min WU ,  Ye-Ming HSU ,  Chien-Fu HUANG ,  Chao-Hsing CHEN ,  Chiu-Lin YAO ,  Hsin-Mao LIU ,  Chien-Kai CHUNG

IPC: H01L33/62 ,  H01L25/075 ,  H01L33/42 ,  H01L33/60 ,  H01L33/38

CPC classification number: H01L33/62 ,  H01L25/0753 ,  H01L27/15 ,  H01L33/08 ,  H01L33/10 ,  H01L33/145 ,  H01L33/32 ,  H01L33/382 ,  H01L33/385 ,  H01L33/40 ,  H01L33/42 ,  H01L33/44 ,  H01L33/46 ,  H01L33/483 ,  H01L33/60 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A light-emitting device comprising: a supportive substrate; a transparent layer formed on the supportive substrate, and the transparent layer comprising conductive metal oxide material; a light-emitting stacked layer comprising an active layer formed on the transparent layer; and an etching-stop layer formed between the light-emitting stacked layer and the supportive substrate and contacting the transparent layer, wherein a thickness of the etching-stop layer is thicker than that of the transparent layer.

公开(公告)号：US20160163917A1

公开(公告)日：2016-06-09

申请号：US14908886

申请日：2013-07-29

Applicant: EPISTAR CORPORATION

Inventor： Chih-Chiang LU ,  Yi-Ming CHEN ,  Chun-Yu LIN ,  Ching-Pei LIN ,  Chung-Hsun CHIEN ,  Chien-Fu HUANG ,  Hao-Min KU ,  Min-Hsun HSIEH ,  Tzu-Chieh HSU

IPC: H01L33/00 ,  H01L33/62 ,  H01L21/683

CPC classification number: H01L33/0079 ,  H01L21/6835 ,  H01L21/6836 ,  H01L33/0095 ,  H01L33/62 ,  H01L2221/68318 ,  H01L2221/68363 ,  H01L2221/68381 ,  H01L2933/0066

Abstract: A method of selectively transferring semiconductor devices comprises the steps of providing a substrate having a first surface and a second surface; providing a plurality of semiconductor epitaxial stacks on the first surface, wherein each of the plurality of semiconductor epitaxial stacks comprises a first semiconductor epitaxial stack and a second semiconductor epitaxial stack, and the first semiconductor epitaxial stack is apart from the second semiconductor epitaxial stack, and wherein a adhesion between the first semiconductor epitaxial stack and the substrate is different from a adhesion between the second semiconductor epitaxial stack and the substrate; and selectively separating the first semiconductor epitaxial stack or the second semiconductor epitaxial stack from the substrate.

Abstract translation: 选择性地转移半导体器件的方法包括提供具有第一表面和第二表面的衬底的步骤; 在所述第一表面上提供多个半导体外延堆叠，其中所述多个半导体外延堆叠中的每一个包括第一半导体外延堆叠和第二半导体外延堆叠，并且所述第一半导体外延堆叠体与所述第二半导体外延堆叠体分离，以及 其中所述第一半导体外延叠层和所述基板之间的粘合不同于所述第二半导体外延叠层和所述基板之间的粘附; 以及从衬底选择性地分离第一半导体外延层或第二半导体外延层。

公开(公告)号：US20160133796A1

公开(公告)日：2016-05-12

申请号：US14535995

申请日：2014-11-07

Applicant: EPISTAR CORPORATION

Inventor： Jen-Li HU ,  Tzu-Chieh HSU

IPC: H01L33/46 ,  H01L33/38 ,  H01L33/42

CPC classification number: H01L33/46 ,  H01L33/14 ,  H01L33/145 ,  H01L33/38 ,  H01L33/405 ,  H01L33/42

Abstract: A light-emitting device comprises a light-emitting structure capable of emitting a light; an electrode formed on a side of the light-emitting structure; a transparent structure formed on a second side of the light-emitting structure, wherein the transparent structure is aligned to a region of the electrode, and comprises a first transparent layer and a second transparent layer around the first transparent layer; a contact structure formed on the second side of the light-emitting structure; and a reflective layer covering the transparent structure and the contact structure.

Abstract translation: 发光装置包括能够发光的发光结构; 形成在发光结构的一侧的电极; 形成在所述发光结构的第二侧上的透明结构，其中所述透明结构与所述电极的区域对准，并且包括围绕所述第一透明层的第一透明层和第二透明层; 形成在所述发光结构的第二侧上的接触结构; 以及覆盖透明结构和接触结构的反射层。

公开(公告)号：US20140295588A1

公开(公告)日：2014-10-02

申请号：US14196708

申请日：2014-03-04

Applicant: EPISTAR CORPORATION

Inventor： Yi-Ming CHEN ,  Tzu-Chieh HSU ,  Chi-Hsing CHEN ,  Hsin-Ying WANG

IPC: H01L33/00 ,  H01L21/02

CPC classification number: H01L33/005 ,  H01L21/02436 ,  H01L21/02664 ,  H01L33/0079

Abstract: A method of forming a light-emitting diode includes: providing a substrate having one or more first openings passing through the substrate; forming a sacrificial layer on the substrate; forming an epitaxial layer on the sacrificial layer; connecting a supporting substrate with the epitaxial layer; and separating the substrate from the epitaxial layer by selectively etching the sacrificial layer.

Abstract translation: 形成发光二极管的方法包括：提供具有穿过基板的一个或多个第一开口的基板; 在所述基板上形成牺牲层; 在牺牲层上形成外延层; 将支撑衬底与所述外延层连接; 以及通过选择性蚀刻牺牲层将衬底与外延层分离。

公开(公告)号：US20230246125A1

公开(公告)日：2023-08-03

申请号：US18127484

申请日：2023-03-28

Applicant: EPISTAR CORPORATION

Inventor： Tzu-Chieh HSU ,  Yi-Wen HUANG ,  Shou-Lung CHEN ,  Hsin-Kang CHEN

IPC: H01L33/10 ,  H01L33/60 ,  H01L33/20 ,  H01L33/62 ,  H01L33/38 ,  H01S5/42 ,  H01S5/02 ,  H01S5/042

CPC classification number: H01L33/10 ,  H01L33/20 ,  H01L33/60 ,  H01L33/62 ,  H01L33/385 ,  H01S5/0216 ,  H01S5/423 ,  H01S5/0425 ,  H01S5/04254 ,  H01S5/04256 ,  H01S5/18311

Abstract: A semiconductor device includes a substrate having a first side and a second side opposite to the first side; a first optical element at the first side of the substrate; and a semiconductor stack on the substrate. The semiconductor stack includes a first reflective structure; a second reflective structure; a cavity region between the first reflective structure and the second reflective structure and having a first surface and a second surface opposite to the first surface; and a confinement layer in one of the second reflective structure and the first reflective structure. The semiconductor device further includes a first electrode and a second electrode on the first surface.

公开(公告)号：US20170256914A1

公开(公告)日：2017-09-07

申请号：US15062995

申请日：2016-03-07

Applicant: EPISTAR CORPORATION

Inventor： Tzu-Chieh HSU ,  Yi-Wen HUANG ,  Yi-Hung LIN ,  Chih-Chiang LU

IPC: H01S5/187 ,  H01S5/343 ,  H01S5/22 ,  H01S5/183 ,  H01S5/042

CPC classification number: H01S5/187 ,  H01S5/02276 ,  H01S5/026 ,  H01S5/0283 ,  H01S5/0286 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/18308 ,  H01S5/18322 ,  H01S5/18344 ,  H01S5/1835 ,  H01S5/18391 ,  H01S5/18394 ,  H01S5/2213 ,  H01S5/2214 ,  H01S5/2216 ,  H01S5/343 ,  H01S5/423 ,  H01S2301/18

Abstract: A light-emitting device is provided. The light-emitting device is configured to emit a radiation and comprises: a substrate; an epitaxial structure on the substrate and comprising a first DBR stack, a light-emitting stack and a second DBR stack and a contact layer in sequence; an electrode; a current blocking layer between the contact layer and the electrode; a first opening formed in the current blocking layer; and a second opening formed in the electrode and within the first opening; wherein a part of the electrode fills in the first opening and contacts the contact layer; and the light-emitting device is devoid of an oxidized layer and an ion implanted layer in the second DBR stack.

公开(公告)号：US20170033259A1

公开(公告)日：2017-02-02

申请号：US15295226

申请日：2016-10-17

Applicant: EPISTAR CORPORATION

Inventor： Chih-Chiang LU ,  Yi-Ming CHEN ,  Chun-Yu LIN ,  Ching-Pei LIN ,  Chung-Hsun CHIEN ,  Chien-Fu HUANG ,  Hao-Min KU ,  Min-Hsun HSIEH ,  Tzu-Chieh HSU

IPC: H01L33/00 ,  H01L21/683 ,  H01L33/62

CPC classification number: H01L33/0079 ,  H01L21/6835 ,  H01L21/6836 ,  H01L33/0095 ,  H01L33/62 ,  H01L2221/68318 ,  H01L2221/68363 ,  H01L2221/68381 ,  H01L2933/0066

Abstract: A semiconductor device comprises a substrate, a first semiconductor unit on the substrate, and an first adhesion structure between the substrate and the first semiconductor unit, and directly contacting the first semiconductor unit and the substrate, wherein the first adhesion structure comprises an adhesion layer and a sacrificial layer, and the adhesion layer and the sacrificial layer are made of different materials, and wherein an adhesion between the first semiconductor unit and the adhesion layer is different from that between the first semiconductor unit and the sacrificial layer.

Abstract translation: 半导体器件包括衬底，衬底上的第一半导体单元以及衬底和第一半导体单元之间的第一粘附结构，并且直接接触第一半导体单元和衬底，其中第一粘附结构包括粘附层和 牺牲层，并且粘合层和牺牲层由不同的材料制成，并且其中第一半导体单元和粘附层之间的粘附力与第一半导体单元和牺牲层之间的粘合不同。

公开(公告)号：US20170025567A1

公开(公告)日：2017-01-26

申请号：US14808295

申请日：2015-07-24

Applicant: EPISTAR CORPORATION

Inventor： Shao-Ping LU ,  Yi-Ming CHEN ,  Yu-Ren PENG ,  Chun-Yu LIN ,  Chun-Fu TSAI ,  Tzu-Chieh HSU

IPC: H01L33/06 ,  H01L33/10 ,  H01L33/00

CPC classification number: H01L27/153 ,  H01L33/005 ,  H01L33/08

Abstract: A light-emitting device comprises a carrier; and a first semiconductor element comprising a first semiconductor structure and a second semiconductor structure, wherein the second semiconductor structure is closer to the carrier than the first semiconductor structure is to the carrier, the first semiconductor structure comprises a first MQW structure configured to emit a first light having a first dominant wavelength during normal operation, and the second semiconductor structure comprises a second MQW structure configured not to emit light during normal operation.

Abstract translation: 发光装置包括载体; 以及包括第一半导体结构和第二半导体结构的第一半导体元件，其中所述第二半导体结构比所述第一半导体结构靠近所述载体更靠近所述载流子，所述第一半导体结构包括构造成发射第一半导体结构的第一半导体结构 在正常操作期间具有第一主波长的光，并且第二半导体结构包括在正常操作期间被配置为不发光的第二MQW结构。

公开(公告)号：US20160079481A1

公开(公告)日：2016-03-17

申请号：US14949414

申请日：2015-11-23

Applicant: EPISTAR CORPORATION

Inventor： Chun-Yu LIN ,  Tzu-Chieh HSU ,  Fu-Chun TSAI ,  Yi-Wen HUANG ,  Chih-Chiang LU

IPC: H01L33/44 ,  H01L33/20

CPC classification number: H01L33/44 ,  H01L33/20 ,  H01L33/22 ,  H01L33/38 ,  H01L33/60

Abstract: This disclosure discloses a light-emitting chip comprises: a light-emitting stack, having a side wall, comprising an active layer emitting light; and a light-absorbing layer having a first portion surrounding the side wall and being configured to absorb 50% light toward the light-absorbing layer.

Abstract translation: 本公开公开了一种发光芯片，包括：具有侧壁的发光叠层，包括发射光的有源层; 以及光吸收层，其具有围绕所述侧壁的第一部分，并且被配置为朝向所述光吸收层吸收50％的光。

公开(公告)号：US20150144984A1

公开(公告)日：2015-05-28

申请号：US14554488

申请日：2014-11-26

Applicant: Epistar Corporation

Inventor： Yi-Ming CHEN ,  Chun-Yu LIN ,  Tsung-Hsien YANG ,  Tzu-Chieh HSU ,  Kun-De LIN ,  Yao-Ning CHAN ,  Chih-Chiang LU

IPC: H01L33/38 ,  H01L33/22

CPC classification number: H01L33/382 ,  H01L33/08 ,  H01L33/22 ,  H01L33/46

Abstract: A semiconductor light-emitting device comprises a semiconductor stack comprising a side, a first surface and a second surface opposite to the first surface, wherein the semiconductor stack further comprises a conductive via extending from the first surface to the second surface; a transparent conductive layer formed on the second surface; a first pad portion and a second pad portion formed on the first surface and electrically connected to the semiconductor stack; and an insulating layer formed between the first pad portion and the semiconductor stack and between the second pad portion and the semiconductor stack.

Abstract translation: 半导体发光器件包括半导体叠层，其包括侧面，第一表面和与第一表面相对的第二表面，其中半导体堆叠还包括从第一表面延伸到第二表面的导电通孔; 形成在所述第二表面上的透明导电层; 第一焊盘部分和第二焊盘部分，形成在第一表面上并电连接到半导体堆叠; 以及形成在第一焊盘部分和半导体堆叠之间以及在第二焊盘部分和半导体堆叠之间的绝缘层。