MONOLITHISCH INTEGRIERTE III-V-OPTOELEKTRONIK MIT SI-CMOS

    公开(公告)号:DE102016205173A1

    公开(公告)日:2016-10-06

    申请号:DE102016205173

    申请日:2016-03-30

    Applicant: IBM

    Abstract: Ein Verfahren zum Ausbilden monolithisch integrierter III-V-Optoelektronik mit einem komplementären Metalloxid-Silizium-Halbleiter-(CMOS, Complementary Metal-Oxide-Semiconductor-)Bauelement. Das Verfahren kann aufweisen: das Ausbilden eines versenkten Wellenleiters in einer versenkten Oxid-(BOX)-Schicht eines Halbleiter-auf-Isolator-(SOI-)Substrats; ein Ausbilden eines ersten optoelektronischen Bauelements und eines zweiten optoelektronischen Bauelements angrenzend an den versenkten Wellenleiter; und ein Ausbilden eines CMOS-Bauelements auf einer Halbleiterschicht über der BOX-Schicht.

    Controlled spalling of group III nitrides containing an embedded spall releasing plane

    公开(公告)号:GB2521517B

    公开(公告)日:2015-12-30

    申请号:GB201418871

    申请日:2014-10-23

    Applicant: IBM

    Abstract: A spall releasing plane is formed embedded within a Group III nitride material layer. The spall releasing plane includes a material that has a different strain, a different structure and a different composition compared with the Group III nitride material portions that provide the Group III nitride material layer and embed the spall releasing plane. The spall releasing plane provides a weakened material plane region within the Group III nitride material layer which during a subsequently performed spalling process can be used to release one of the portions of Group III nitride material from the original Group III nitride material layer. In particular, during the spalling process crack initiation and propagation occurs within the spall releasing plane embedded within the original Group III nitride material layer.

    LAYER TRANSFER USING BORON-DOPED SIGE LAYER

    公开(公告)号:GB2489830B

    公开(公告)日:2014-08-20

    申请号:GB201206801

    申请日:2011-02-01

    Applicant: IBM

    Abstract: A method for layer transfer using a boron-doped silicon germanium (SiGe) layer includes forming a boron-doped SiGe layer on a bulk silicon substrate; forming an upper silicon (Si) layer over the boron-doped SiGe layer; hydrogenating the boron-doped SiGe layer; bonding the upper Si layer to an alternate substrate; and propagating a fracture at an interface between the boron-doped SiGe layer and the bulk silicon substrate. A system for layer transfer using a boron-doped silicon germanium (SiGe) layer includes a bulk silicon substrate; a boron-doped SiGe layer formed on the bulk silicon substrate, such that the boron-doped SiGe layer is located underneath an upper silicon (Si) layer, wherein the boron-doped SiGe layer is configured to propagate a fracture at an interface between the boron-doped SiGe layer and the bulk silicon substrate after hydrogenation of the boron-doped SiGe layer; and an alternate substrate bonded to the upper Si layer.

    Method for controlled layer transfer

    公开(公告)号:GB2493244B

    公开(公告)日:2013-06-26

    申请号:GB201210426

    申请日:2012-06-13

    Applicant: IBM

    Abstract: A method of controlled layer transfer is provided. The method includes providing a stressor layer to a base substrate. The stressor layer has a stressor layer portion located atop an upper surface of the base substrate and a self-pinning stressor layer portion located adjacent each sidewall edge of the base substrate. A spalling inhibitor is then applied atop the stressor layer portion of the base substrate, and thereafter the self-pinning stressor layer portion of the stressor layer is decoupled from the stressor layer portion. A portion of the base substrate that is located beneath the stressor layer portion is then spalled from the original base substrate. The spalling includes displacing the spalling inhibitor from atop the stressor layer portion. After spalling, the stressor layer portion is removed from atop a spalled portion of the base substrate.

    Method of cleaving a germanium containing substrate

    公开(公告)号:GB2492439A

    公开(公告)日:2013-01-02

    申请号:GB201206930

    申请日:2012-04-20

    Applicant: IBM

    Abstract: A method cleaving a semiconductor material that includes providing a germanium substrate 1 having a germanium-tin alloy layer 10 is present therein; a stressor layer 20 is deposited on a surface of the germanium substrate 1, a stress from the stressor layer 20 is applied to the germanium substrate 1, in which the stress cleaves the germanium substrate 1 to provide a cleaved surface 4, where the germanium-tin alloy layer 10 is between the germanium substrate surface 15 and the cleaved surface 4; where the germanium substrate 5a between the cleaved surface 4 and the germanium-tin alloy layer 10 is then selectively etched. Also disclosed is a method as above where the germanium-tin alloy layer 10 is weakened prior to applying the stressor layer 20, such that the applied stress from the stressor layer 20 causes a split along the germanium-tin alloy layer 10. Further disclosed is a photovoltaic device comprising a layer of germanium with a first conductivity and thickness of 1 to 10 µm and a thickness uniformity of 100nm across its entire length; and a semiconductor layer present on the germanium layer, the semiconductor layer having a second, opposite conductivity to the first.

    SPALLING FOR A SEMICONDUCTOR SUBSTRATE

    公开(公告)号:CA2783380A1

    公开(公告)日:2011-09-01

    申请号:CA2783380

    申请日:2011-02-16

    Applicant: IBM

    Abstract: A method for spalling a layer from an ingot of a semiconductor substrate includes forming a metal layer on the ingot of the semiconductor substrate, wherein a tensile stress in the metal layer is configured to cause a fracture in the ingot; and removing the layer from the ingot at the fracture. A system for spalling a layer from an ingot of a semiconductor substrate includes a metal layer formed on the ingot of the semiconductor substrate, wherein a tensile stress in the metal layer is configured to cause a fracture in the ingot, and wherein the layer is configured to be removed from the ingot at the fracture.

    Mehrere in eine Neuralsonde integrierte Lichtquellen zum Aktivieren mit mehreren Wellenlängen

    公开(公告)号:DE112019000533B4

    公开(公告)日:2025-02-06

    申请号:DE112019000533

    申请日:2019-01-15

    Applicant: IBM

    Abstract: Sonde (100), die aufweist:einen Sondenkörper (102), der zum Eindringen in biologisches Gewebe geeignet ist; undeine Mehrzahl innerhalb des Sondenkörpers (102) angeordneter Hochleistungs-Lichtquellen,wobei es sich bei der Mehrzahl der Hochleistungs-Lichtquellen um Leuchtdioden (LEDs) handelt, wobei mindestens eine LED Licht in einem roten oder Infrarotbereich des elektromagnetischen Spektrums und mindestens eine LED Licht in einem blauen, gelben oder grünen Bereich des elektromagnetischen Spektrums emittiert,wobei die mindestens eine LED, die Licht in dem roten oder Infrarotbereich des elektromagnetischen Spektrums emittiert, aufweist:ein Germaniumsubstrat;mindestens eine dotierte Schicht aus In0.49Ga0.51P vom n-Typ;mindestens eine undotierte Schicht aus In0.49Ga0.51P;eine Trogschicht aus InxGa(1-x)P, wobei x gleich einem Wert zwischen ungefähr 0,50 und ungefähr 0,60 ist; undmindestens eine dotierte Schicht aus In0.49Ga0.51P vom p-Typ.

    WIEDERAUFLADBARE BATTERIESTAPEL
    39.
    发明专利

    公开(公告)号:DE112018003525T5

    公开(公告)日:2020-04-16

    申请号:DE112018003525

    申请日:2018-09-11

    Applicant: IBM

    Abstract: Es werden wiederaufladbare Batterien mit einer hohen Kapazität (d.h. mit einer Kapazität von 50 mAh/gm oder einer höheren Kapazität) und einem hohen Leistungsvermögen bereitgestellt, die einen wiederaufladbaren Batteriestapel enthalten, der eine Struktur aus einem abgeblätterten Material aufweist, die eine Schicht aus einem Kathodenmaterial umfasst, die an einem Stressormaterial angebracht ist. Das Kathodenmaterial kann ein einkristallines Material aufweisen, das frei von polymeren Bindemitteln ist. Das Stressormaterial dient als ein Kathodenstromkollektor des wiederaufladbaren Batteriesta pels.

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