公开(公告)号：DE10301475A1

公开(公告)日：2004-07-29

申请号：DE10301475

申请日：2003-01-16

Applicant: INFINEON TECHNOLOGIES AG

Inventor： NOELSCHER CHRISTOPH ,  ZIEBOLD RALF ,  PFORR RAINER

IPC: G02B27/28 ,  G03F7/20

Abstract: A process for illuminating a photosensitive layer (5) on a substrate (4) with two structure patterns in different regions (10,20) comprises irradiating a first mask (1) with linearly polarized light (46) and irradiating a second mask with differently polarized or unpolarized light (44) so that both regions are illuminated. An Independent claim is also included for a projection apparatus for the above process.

公开(公告)号：DE10006952C2

公开(公告)日：2002-05-16

申请号：DE10006952

申请日：2000-02-16

Applicant: INFINEON TECHNOLOGIES AG

Inventor： FRIEDRICH CHRISTOPH ,  GRIESINGER UWE ,  GANS FRITZ ,  ERGENZINGER KLAUS ,  MAURER WILHELM ,  PFORR RAINER ,  KNOBLOCH JUERGEN ,  WIDMANN DIETRICH ,  CZECH GUENTHER ,  FUELBER CARSEN

IPC: G03F1/00 ,  G03F7/20

公开(公告)号：DE19957542C2

公开(公告)日：2002-01-10

申请号：DE19957542

申请日：1999-11-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： PFORR RAINER ,  FRIEDRICH CHRISTOPH ,  HEISSMEIER MICHAEL ,  MOUKARA MOLELA ,  GRIESINGER UWE ,  LUDWIG BURKHARD

IPC: G03F1/30 ,  G03F1/00 ,  H01L21/027 ,  G03F1/14

Abstract: An alternating phase mask having a branched structure containing two opaque segments is described. Two transparent surface segments are disposed on both sides of the segments or the components thereof, respectively. The surface segments are provided with phases that are displaced by 180°±Delta alpha, whereby Delta alpha a is not more than 25°. The surface segments are separated by at least one transparent surface boundary segment whose phase is situated between the phases of the adjacent surface segments.

公开(公告)号：DE10301475B4

公开(公告)日：2007-10-11

申请号：DE10301475

申请日：2003-01-16

Applicant: INFINEON TECHNOLOGIES AG

Inventor： NOELSCHER CHRISTOPH ,  ZIEBOLD RALF ,  PFORR RAINER

IPC: G03F7/20 ,  G02B27/28

公开(公告)号：DE102006004230A1

公开(公告)日：2007-08-09

申请号：DE102006004230

申请日：2006-01-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HENNIG MARIO ,  PFORR RAINER ,  UNGER GERD

IPC: G03F1/00 ,  G03F7/20 ,  G06F17/50

Abstract: A layout is decomposed into partial patterns. An intermediate mask is drawn for each of the partial patterns. The intermediate masks are used in a mask stepper or scanner progressively for projection again into a common pattern on a test mask. A line width distribution LB(x,y) is determined from the test mask or from a test wafer exposed using the mask, and is converted into a distribution of dose corrections. The transmission T(x,y) of the respective intermediate masks is adapted based upon the calculated dose correction. This can be achieved using additional optical elements which are assigned to the intermediate masks and have shading structure elements, or by laser-induced rear-side introduction of shading elements in the quartz substrate of the intermediate masks themselves.

公开(公告)号：DE102005003905A1

公开(公告)日：2006-10-12

申请号：DE102005003905

申请日：2005-01-27

Applicant: INFINEON TECHNOLOGIES AG

Inventor： PFORR RAINER ,  MOUKARA MOLELA ,  MUELDERS THOMAS ,  HENNIG MARIO ,  ZEILER KARSTEN

IPC: G03F7/20 ,  G03F1/00

Abstract: An improvement of the imaging quality with simultaneous transfer of line-space gratings and peripheral structures including a MUX space is achieved using a quadrupole illumination whose poles are formed in elongate fashion and whose longitudinal axes are arranged perpendicular to the orientation of the lines of the line-space grating arranged on a mask. The structure imaging of the line-space grating is improved with regard to contrast, MEEF, and process window, while the geometrical fidelity of the peripheral structure, in particular of the MUX space, is stabilized over a wide depth of field range.

公开(公告)号：DE10361875A1

公开(公告)日：2005-07-21

申请号：DE10361875

申请日：2003-12-19

Applicant: INFINEON TECHNOLOGIES AG

Inventor： PFORR RAINER ,  MUELDERS THOMAS ,  CRELL CHRISTIAN ,  BAUCH LOTHAR ,  ZIEBOLD RALF ,  MOELLER HOLGER ,  GRAESER ANNETT

IPC: G03F1/00 ,  G03F1/36 ,  G03F1/14 ,  G03F1/08

Abstract: A lithography mask comprises a structure for transferring a layout onto a substrate. A blind macrostructure (1) is used to suppress scattered light, and is located at a bright region of the structure. The macrostructure is partially transparent and does not print on the substrate or form a resist structure.

公开(公告)号：DE10359200A1

公开(公告)日：2005-04-28

申请号：DE10359200

申请日：2003-12-17

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HOFMANN DETLEF ,  HENNIG MARIO ,  THIELSCHER GUIDO ,  GRUSS STEFAN ,  PFORR RAINER ,  FROEHLICH HANS-GEORG

IPC: H01L23/544 ,  G03F9/00 ,  G03F7/20

公开(公告)号：DE10043948C2

公开(公告)日：2003-04-17

申请号：DE10043948

申请日：2000-09-06

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HASSMANN JENS ,  PFORR RAINER ,  WERNEKE TORSTEN

IPC: G03F7/20 ,  G03F9/00

公开(公告)号：DE10006952A1

公开(公告)日：2001-08-30

申请号：DE10006952

申请日：2000-02-16

Applicant: INFINEON TECHNOLOGIES AG

Inventor： FRIEDRICH CHRISTOPH ,  GRIESINGER UWE ,  GANS FRITZ ,  ERGENZINGER KLAUS ,  MAURER WILHELM ,  PFORR RAINER ,  KNOBLOCH JUERGEN ,  WIDMANN DIETRICH ,  CZECH GUENTHER ,  FUELBER CARSEN

IPC: G03F1/00 ,  G03F7/20

Abstract: Mask set comprises a first chrome-less phase mask (1) for producing exposed and non-exposed regions on a photolaquer in a minimal structure and a second mask (2) for dividing the non-exposed regions by exposing partial regions of the regions non-exposed by the first phase mask. An Independent claim is also claimed for a process for producing structures acting as resist masks (3). Preferred Features: The second mask is a chrome-on-glass mask or a halftone mask. The exposed and non-exposed regions produced by the first mask are formed in straight lines. Both masks each have a number of individual structures.