公开(公告)号：DE10241192A1

公开(公告)日：2004-03-11

申请号：DE10241192

申请日：2002-09-05

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： LUTGEN STEPHAN ,  SCHMID WOLFGANG ,  LUFT JOHANN ,  LINDER NORBERT ,  KARNUTSCH CHRISTIAN

IPC: H01S5/04 ,  H01S3/109 ,  H01S5/026 ,  H01S5/06 ,  H01S5/10 ,  H01S5/14 ,  H01S5/183 ,  H01S5/40 ,  H01S5/34 ,  H01S3/0941

Abstract: Optically pumped radiation-emitting semiconductor device comprises a semiconductor body having a pump radiation source (20) and a surface-emitted quantum well structure (11), and a recess (10) for coupling the pump radiation (2) in the quantum well structure between the pump radiation source and the quantum well structure. An Independent claim is also included for a process for the production of an optically pumped radiation-emitting semiconductor device.

公开(公告)号：DE10220333A1

公开(公告)日：2003-11-27

申请号：DE10220333

申请日：2002-05-07

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： LINDER NORBERT ,  STRAUS UWE

IPC: H01L33/38 ,  H01L33/40 ,  H01L33/00

Abstract: Semiconductor component has a substrate (10) and several microstructure elements (12) arranged spaced apart on the substrate, each containing a nitride composition semiconductor. Each microstructure element has a lower contact layer (20) adjacent the substrate, an upper contact layer (18) and an active radiation emitting layer (16) between the upper and lower layers, and contact metal (22) on the upper layer. The microstructure elements each comprise a waveguide with the active layer between first and second reflective surfaces.

公开(公告)号：DE102008030751A1

公开(公告)日：2009-12-31

申请号：DE102008030751

申请日：2008-06-27

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： BERGENEK KRISTER ,  WIRTH RALPH ,  LINDER NORBERT ,  WIESMANN CHRISTOPHER

IPC: H01L33/22 ,  H01L33/46 ,  H01L51/50

公开(公告)号：DE102008021621A1

公开(公告)日：2009-11-05

申请号：DE102008021621

申请日：2008-04-30

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： BERGENEK KRISTER ,  WIRTH RALPH ,  LINDER NORBERT ,  WIESMANN CHRISTOPHER

IPC: H01S5/12 ,  H01L33/02 ,  H01L33/44 ,  H01L33/46 ,  H01S5/34

Abstract: The chip (1) has an active zone (2) for generating electro magnetic radiation, and a photonic crystal (3) or quasi crystal for radiation extraction in an exit angle region. A rear side reflection layer (4) made of gold alloy reflects radiation propagated in the chip. A front side reflection layer (6) e.g. bragg mirror, lies opposite to the rear side reflection layer, where distance between the reflection layers (4, 6) is calculated using a preset formula that relates to wavelength and refraction index. A rear side contact layer (5) is formed with transparent conducting oxide.

公开(公告)号：DE102008003182A1

公开(公告)日：2009-07-09

申请号：DE102008003182

申请日：2008-01-04

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： LINDER NORBERT ,  WIESMANN CHRISTOPHER ,  WINDISCH REINER

IPC: H01L33/38 ,  H01L33/42 ,  H01L33/44 ,  H01L33/46

公开(公告)号：DE102007053297A1

公开(公告)日：2009-03-19

申请号：DE102007053297

申请日：2007-11-08

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： WIESMANN CHRISTOPHER ,  LINDER NORBERT

IPC: F21V9/14 ,  H01L33/20 ,  H01L33/44

Abstract: The polarized light source comprises a light emitting diode (1), which emits the unpolarized light. A photonic crystal (2) with an anisotropic crystal structure is provided, which is arranged in the light path of the light emitting diode. The photonic crystal converts the unpolarized light emitted from the light emitting diode into a linear polarized light. The light emitting diode is a thin film light emitting diode.

公开(公告)号：DE10306311B4

公开(公告)日：2008-08-07

申请号：DE10306311

申请日：2003-02-14

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： LINDER NORBERT ,  STREUBEL KLAUS ,  STAUSS PETER ,  HAMPEL MARK

IPC: H01L33/04 ,  H01L33/30

公开(公告)号：DE50113278D1

公开(公告)日：2007-12-27

申请号：DE50113278

申请日：2001-05-16

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： LINDER NORBERT ,  ALBRECHT TONY ,  LUFT JOHANN

IPC: H01S5/183 ,  H01S5/026 ,  H01S5/04 ,  H01S5/10 ,  H01S5/14 ,  H01S5/34 ,  H01S5/40

公开(公告)号：DE10214120B4

公开(公告)日：2007-06-06

申请号：DE10214120

申请日：2002-03-28

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： LUFT JOHANN ,  ALBRECHT TONY ,  LINDER NORBERT ,  LUTGEN STEPHAN ,  SPAETH WERNER ,  STEEGMUELLER ULRICH

IPC: H01S5/40 ,  H01S5/026 ,  H01S5/04 ,  H01S5/06 ,  H01S5/062 ,  H01S5/10 ,  H01S5/14 ,  H01S5/183

Abstract: Surface-emitting semiconductor laser arrangement comprises a vertical emitter (20) having a radiation-producing layer (14), and a modulation radiation source (30) for modulating the output of the laser arrangement. The modulation radiation source has an edge-emitting semiconductor structure (15) with a radiation-producing active layer and arranged so that it emits radiation during operation. The modulation radiation source is coupled with the radiation-producing layer of the vertical emitter.

公开(公告)号：DE10329079A1

公开(公告)日：2005-01-27

申请号：DE10329079

申请日：2003-06-27

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： LINDER NORBERT ,  PIETZONKA INES ,  BUTENDEICH RAINER ,  MAYER BERND

IPC: H01L33/02 ,  H01S5/30 ,  H01L33/00

Abstract: The component has n- and p-doped confinement layers (14,22) and n active, photon emitting layer (18) between them. The n-doped confinement layer is doped with a first n-doping material to produce high active doping and/or a sharp doping profile and the active layer is doped with a second different doping material to improve the layer quality of the active layer.