公开(公告)号：DE102009036621A1

公开(公告)日：2011-02-10

申请号：DE102009036621

申请日：2009-08-07

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： WEIDNER KARL ,  WIRTH RALPH ,  KALTENBACHER AXEL ,  WEGLEITER WALTER ,  BARCHMANN BERND ,  WUTZ OLIVER ,  MARFELD JAN

IPC: H01L33/52 ,  H01L25/075 ,  H01L31/0203 ,  H01L33/50 ,  H01L33/62

Abstract: Es wird ein Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils mit den folgenden Schritten angegeben: - Bereitstellen eines Trägers (1), - Anordnen zumindest eines optoelektronischen Halbleiterchips (2) an einer Oberseite (1a) des Trägers (1), - Umformen des zumindest einen optoelektronischen Halbleiterchips (2) mit einem Formkörper (3), wobei der Formkörper (3) alle Seitenflächen (2c) des zumindest einen optoelektronischen Halbleiterchips (2) bedeckt und wobei die dem Träger (1) abgewandte Oberfläche an der Oberseite (2a) oder die dem Träger zugewandte Oberfläche an der Unterseite (2b) des zumindest einen Halbleiterchips (2) frei vom Formkörper (3) bleibt oder freigelegt wird, - Entfernen des Trägers (1).

公开(公告)号：DE10253908B4

公开(公告)日：2010-04-22

申请号：DE10253908

申请日：2002-11-19

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： WIRTH RALPH ,  KARNUTSCH CHRISTIAN ,  STREUBEL KLAUS

IPC: H01L33/02 ,  H01L33/10

公开(公告)号：DE502005008192D1

公开(公告)日：2009-11-05

申请号：DE502005008192

申请日：2005-06-29

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： KRAEUTER GERTRUD ,  PLOESSL ANDREAS ,  WIRTH RALPH ,  ZULL HERIBERT

IPC: H01L33/46

Abstract: The invention describes a method for producing a reflective layer system and a reflective layer system for application to a III/V compound semiconductor material, wherein a first layer, containing phosphosilicate glass, is applied directly to the semiconductor substrate Disposed thereon is a second layer, containing silicon nitride. A metallic layer is then applied thereto.

公开(公告)号：DE102007060202A1

公开(公告)日：2009-06-25

申请号：DE102007060202

申请日：2007-12-14

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： WIRTH RALPH ,  MUSCHAWECK JULIUS

IPC: G02B5/30 ,  G02B27/28 ,  H01L33/58 ,  H01L33/60

Abstract: A semiconductor component emits polarized radiation with a first polarization direction. The semiconductor component includes a chip housing, a semiconductor chip and a chip-remote polarizing filter.

公开(公告)号：DE102007057671A1

公开(公告)日：2009-06-04

申请号：DE102007057671

申请日：2007-11-30

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： WIRTH RALPH

IPC: F21V5/00 ,  F21K99/00 ,  F21V9/00 ,  F21V15/01 ,  H01L33/44 ,  H01L33/58

公开(公告)号：DE102006046038A1

公开(公告)日：2008-04-03

申请号：DE102006046038

申请日：2006-09-28

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： BOGNER GEORG ,  GROETSCH STEFAN ,  KIRCHBERGER GUENTER ,  STREUBEL KLAUS ,  WINDISCH REINER ,  WIRTH RALPH

IPC: H01L33/08

Abstract: The semiconductor body has two radiation-generating active layers, where each layer has a forward voltage (Uled). The active layers are adjusted to an operating voltage (Ub) such that a voltage (Uw) dropping at a series resistor formed in series to the active layers is larger as a voltage (Uh) dropping at the semiconductor body. The voltage (Uw) is smaller than the smallest forward voltage dropping in the semiconductor body.

公开(公告)号：DE102005047168A1

公开(公告)日：2007-04-12

申请号：DE102005047168

申请日：2005-09-30

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： WIRTH RALPH

IPC: H01L33/00 ,  H01L33/10 ,  H01L33/22 ,  H01L33/42 ,  H01S5/02

Abstract: An optoelectronic semiconductor chip is disclosed which emits electromagnetic radiation from its front side (7) during operation, comprising: a semiconductor layer sequence (1) having an active region (4) suitable for generating the electromagnetic radiation, and a self-supporting and electrically conductive mechanical supporting layer (10) formed on the semiconductor layer sequence, which supporting layer mechanically supports the semiconductor layer sequence (1) and is transmissive to radiation of the semiconductor chip.

公开(公告)号：DE10147885B4

公开(公告)日：2006-07-13

申请号：DE10147885

申请日：2001-09-28

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： WIRTH RALPH

IPC: H01L33/10 ,  H01L33/20 ,  H01L33/24

公开(公告)号：DE102004040968A1

公开(公告)日：2006-03-23

申请号：DE102004040968

申请日：2004-08-24

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： PIETZONKA INES ,  WIRTH RALPH ,  SCHMID WOLFGANG

IPC: H01L33/10 ,  H01L33/46

Abstract: A luminescence diode ( 1 ) having an active zone ( 7 ) which emits electromagnetic radiation in a main radiating direction ( 15 ). A reflection-reducing layer sequence ( 16 ) is arranged downstream of the active zone ( 7 ) in the main radiating direction ( 15 ). The reflection-reducing layer sequence includes a DBR mirror ( 13 ), which is formed by at least one layer pair ( 11, 12 ), an antireflective layer ( 9 ) downstream of the DBR mirror ( 13 ) in the main radiating direction ( 15 ) and an intermediate layer ( 14 ) arranged between the DBR mirror ( 13 ) and the antireflective layer ( 9 ).

公开(公告)号：DE102004021175A1

公开(公告)日：2005-11-24

申请号：DE102004021175

申请日：2004-04-30

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： WIRTH RALPH ,  WINDISCH REINER ,  WEGLEITER WALTER

IPC: H01L33/20 ,  H01L33/38 ,  H01L33/00

Abstract: A semiconductor chip (1) for optoelectronics comprises a thin film containing a radiation-emitting zone with sides connecting rear and radiating sides and a film carrier at the back. There is a front contact (2) and a rear trench (3) with contact that does not overlap it and forms an inclined inner wall to turn the radiation. Independent claims are also included for the following: (A) a further semiconductor chip as above;and (B) production processes for these chips.