公开(公告)号：WO2021005067A1

公开(公告)日：2021-01-14

申请号：PCT/EP2020/069139

申请日：2020-07-07

Applicant: ASML NETHERLANDS B.V.

Inventor： JAVAHERI, Narjes ,  VAN DER SCHAAR, Maurits ,  CHANG, Tieh-Ming ,  BOS, Hilko, Dirk ,  WARNAAR, Patrick ,  BAHRAMI, Samira ,  HAJIAHMADI, Mohammadreza ,  TARABRIN, Sergey ,  SEMKIV, Mykhailo

IPC: G03F7/20 ,  G01B11/06

Abstract: Disclosed is a method comprising measuring radiation reflected from a metrology target and decomposing the measured radiation in components, for example Fourier components or spatial components. Further, there is disclosed a recipe selection method which provides an algorithm to select a parameter of the metrology apparatus based on re-calculated dependencies of 5 the measured radiation based on single components.

公开(公告)号：WO2020115125A1

公开(公告)日：2020-06-11

申请号：PCT/EP2019/083666

申请日：2019-12-04

Applicant: ASML NETHERLANDS B.V.

Inventor： VAN DER SCHAAR, Maurits ,  ZWIER, Olger, Victor ,  WARNAAR, Patrick

IPC: G03F7/20 ,  G01N21/17 ,  G01N21/47 ,  H01L21/66

Abstract: A target for determining a performance parameter of a lithographic process, the target comprising a first sub-target formed by at least two overlapping gratings, wherein the underlying grating of the first sub-target has a first pitch and the top lying grating of the first sub-target has a second pitch, at least a second sub-target formed by at least two overlapping gratings, wherein the underlying grating of the second sub-target has a third pitch and the top lying grating of the second sub-target has a fourth pitch.

公开(公告)号：WO2020074412A1

公开(公告)日：2020-04-16

申请号：PCT/EP2019/077016

申请日：2019-10-07

Applicant: ASML NETHERLANDS B.V.

Inventor： ZHOU, Zili ,  PANDEY, Nitesh ,  ZWIER, Olger, Victor ,  WARNAAR, Patrick ,  VAN DER SCHAAR, Maurits ,  MC NAMARA, Elliott, Gerard ,  DEN BOEF, Arie, Jeffrey ,  HINNEN, Paul, Christiaan ,  BOZKURT, Murat ,  OTTENS, Joost, Jeroen ,  BHATTACHARYYA, Kaustuve

IPC: G03F7/20

Abstract: A method of measuring overlay uses a plurality of asymmetry measurements from locations (LOI) on a pair of sub-targets (1032, 1034) formed on a substrate (W). For each sub-target, the plurality of asymmetry measurements are fitted to at least one expected relationship (1502, 1504) between asymmetry and overlay, based on a known bias variation deigned into the sub-targets. Continuous bias variation in one example is provided by varying the pitch of top and bottom gratings (P1/P2). Bias variations between the sub-targets of the pair are equal and opposite (P2/P1). Overlay (OV) is calculated based on a relative shifht (xs) between the fitted relationships for the two sub-targets. The step of fitting asymmetry measurements to at least one expected relationship includes wholly or partially discounting measurements (1506, 1508, 1510) that deviate from the expected relationship and/or fall outside a particular segment of the fitted relationship.

公开(公告)号：WO2019034411A1

公开(公告)日：2019-02-21

申请号：PCT/EP2018/070728

申请日：2018-07-31

Applicant: ASML NETHERLANDS B.V.

Inventor： FARHADZADEH, Farzad ,  HAJIAHMADI, Mohammadreza ,  VAN DER SCHAAR, Maurits ,  BOZKURT, Murat

IPC: G03F7/20

Abstract: Disclosed is a method and associated apparatus of determining a performance parameter (e.g., overlay) of a target on a substrate, and an associated metrology apparatus. The method comprises estimating a set of narrowband measurement values from a set of wideband measurement values relating to the target and determining the performance parameter from said set of narrowband measurement values. The wideband measurement values relate to measurements of the target performed using wideband measurement radiation and may correspond to different central wavelengths. The narrowband measurement values may comprise an estimate of the measurement values which would be obtained from measurement of the target using narrowband measurement radiation having a bandwidth narrower than said wideband measurement radiation.

公开(公告)号：WO2018108527A1

公开(公告)日：2018-06-21

申请号：PCT/EP2017/080770

申请日：2017-11-29

Applicant: ASML NETHERLANDS B.V.

Inventor： WARNAAR, Patrick ,  VAN DER SCHAAR, Maurits ,  GRZELA, Grzegorz ,  KOOP, Erik, Johan ,  CALADO, Victor, Emanuel ,  ZENG, Si-Han

IPC: G03F7/20

Abstract: A method of measuring a property of a substrate, the substrate having a plurality of targets formed thereon, the method comprising: measuring N targets of the plurality of targets using an optical measurement system, where N is an integer greater than 2 and each of said N targets is measured W t times, where W t is an integer greater than 2 so as to obtain N*W t measurement values; and determining R property values using Q equations and the N*W t measurement values, where R t ; wherein the optical measurement system has at least one changeable setting and, for each of the N targets, measurement values are obtained using different setting values of at least one changeable setting.

公开(公告)号：WO2017202665A1

公开(公告)日：2017-11-30

申请号：PCT/EP2017/061854

申请日：2017-05-17

Applicant: ASML NETHERLANDS B.V.

Inventor： VAN HAREN, Richard, Johannes, Franciscus ,  JUNGBLUT, Reiner, Maria ,  VAN DIJK, Leon, Paul ,  ROELOFS, Willem, Seine, Christian ,  TEL, Wim, Tjibbo ,  HUNSCHE, Stefan ,  VAN DER SCHAAR, Maurits

IPC: G03F7/20 ,  G03F1/72

Abstract: A method is proposed involving obtaining data regarding an expected focus offset during a patterning process due to topography of a region of a substrate surface. A modification of a transmission or reflection of a region of a patterning device associated with the region of the substrate surface is determined based on the data. Using the patterning device modified according the determined modification during the patterning process mitigates an impact of the substrate topography on a parameter of the patterning process.

Abstract translation: 提出了一种方法，其涉及获得关于由于衬底表面的区域的形貌而在图案化过程期间的期望的聚焦偏移的数据。 基于该数据确定与衬底表面的区域相关联的图案形成装置的区域的透射或反射的修改。 在图案化过程期间使用根据所确定的修改而修改的图案形成装置减轻了衬底形貌对图案化过程的参数的影响。

公开(公告)号：WO2017178220A1

公开(公告)日：2017-10-19

申请号：PCT/EP2017/057221

申请日：2017-03-27

Applicant: ASML NETHERLANDS B.V.

Inventor： VAN DER SCHAAR, Maurits ,  VAN HAREN, Richard, Johannes, Franciscus ,  MOS, Everhardus, Cornelis ,  ZHANG, Youping

IPC: G03F7/20

CPC classification number: G03F7/70633 ,  G03F7/70516 ,  G03F7/70616 ,  G03F7/70683 ,  H01L22/00 ,  H01L22/12 ,  H01L23/544

Abstract: Disclosed is a method of measuring a target, associated substrate comprising a target and computer program. The target comprises overlapping first and second periodic structures. The method comprising illuminating the target with measurement radiation and detecting the resultant scattered radiation. The pitch of the second periodic structure is such, relative to a wavelength of the measurement radiation and its angle of incidence on the target, that there is no propagative non-zeroth diffraction at the second periodic structure resultant from said measurement radiation being initially incident on said second periodic structure. There may be propagative non-zeroth diffraction at the second periodic structure which comprises further diffraction of one or more non-zero diffraction orders resultant from diffraction by the first periodic structure. Alternatively, the detected scattered radiation may comprise non-zero diffraction orders obtained from diffraction at said the periodic structure which have been disturbed in the near field by the second periodic structure.

Abstract translation: 公开了一种测量包括目标和计算机程序的目标相关基板的方法。 目标包括重叠的第一和第二周期性结构。 该方法包括用测量辐射照射目标并检测所产生的散射辐射。 第二周期性结构的间距相对于测量辐射的波长及其在目标上的入射角而言是这样的，即由于所述测量辐射最初入射在第二周期性结构处不存在传播非零折射 所述第二周期性结构。 在第二周期性结构处可以存在传播非零点衍射，其包括由第一周期性结构衍射产生的一个或多个非零衍射级的进一步衍射。 或者，检测到的散射辐射可以包括由在第二周期性结构在近场中受到干扰的所述周期性结构处的衍射获得的非零衍射级。

公开(公告)号：WO2017108395A1

公开(公告)日：2017-06-29

申请号：PCT/EP2016/079948

申请日：2016-12-06

Applicant: ASML NETHERLANDS B.V.

Inventor： HINNEN, Paul, Christiaan ,  MATHIJSSEN, Simon, Gijsbert, Josephus ,  GOOSEN, Maikel, Robert ,  VAN DER SCHAAR, Maurits ,  DEN BOEF, Arie, Jeffrey

IPC: G03F7/20

CPC classification number: G03F7/70525 ,  G03F7/702 ,  G03F7/70641 ,  G03F7/70683 ,  G03F7/7085

Abstract: A lithographic apparatus (LA) prints product features and at least one focus metrology pattern (T) on a substrate. The focus metrology pattern is defined by a reflective reticle and printing is performed using EUV radiation (404) incident at an oblique angle (Θ). The focus metrology pattern comprises a periodic array of groups of first features (422). A spacing (SI) between adjacent groups of first features is much greater than a dimension (CD) of the first features within each group. Due to the oblique illumination, the printed first features become distorted and/or displaced as a function of focus error. Second features 424 may be provided as a reference against which displacement of the first features may be seen. Measurement of this distortion and/or displacement may be by measuring asymmetry as a property of the printed pattern. Measurement can be done at longer wavelengths, for example in the range 350-800 nm.

Abstract translation: 光刻设备（LA）在基底上印刷产品特征和至少一个聚焦度量模式（T）。 焦点测量图案由反射光罩限定，并且使用以斜角（θ）入射的EUV辐射（404）执行印刷。 聚焦度量模式包括第一特征组的周期性阵列（422）。 第一特征的相邻组之间的间隔（SI）远大于每个组内的第一特征的尺寸（CD）。 由于倾斜照射，打印的第一特征根据聚焦误差而变形和/或移位。 可以提供第二特征424作为可以看到第一特征的位移的参考。 这种畸变和/或位移的测量可以通过测量不对称性作为印刷图案的性质。 测量可以在更长的波长下完成，例如在350-800纳米范围内。

公开(公告)号：WO2015018625A1

公开(公告)日：2015-02-12

申请号：PCT/EP2014/065461

申请日：2014-07-18

Applicant: ASML NETHERLANDS B.V.

Inventor： MIDDLEBROOKS, Scott, Anderson ,  GEYPEN, Niels ,  SMILDE, Hendrik, Jan, Hidde ,  STRAAIJER, Alexander ,  VAN DER SCHAAR, Maurits ,  VAN KRAAIJ, Markus, Gerardus, Martinus, Maria

IPC: G03F7/20

CPC classification number: G03F7/70633

Abstract: Disclosed is a method of measuring a parameter of a lithographic process, and associated inspection apparatus. The method comprises measuring at least two target structures on a substrate using a plurality of different illumination conditions, the target structures having deliberate overlay biases; to obtain for each target structure an asymmetry measurement representing an overall asymmetry that includes contributions due to (i) the deliberate overlay biases, (ii) an overlay error during forming of the target structure and (iii) any feature asymmetry. A regression analysis is performed on the asymmetry measurement data by fitting a linear regression model to a planar representation of asymmetry measurements for one target structure against asymmetry measurements for another target structure, the linear regression model not necessarily being fitted through an origin of the planar representation. The overlay error can then be determined from a gradient described by the linear regression model.

Abstract translation: 公开了一种测量光刻工艺参数的方法和相关检验装置。 该方法包括使用多个不同的照明条件在衬底上测量至少两个目标结构，所述目标结构具有故意的覆盖偏移; 为每个目标结构获得表示总体不对称性的不对称测量，其包括由于（i）故意覆盖偏移引起的贡献，（ii）在形成目标结构期间的覆盖误差和（iii）任何特征不对称性。 对不对称测量数据进行回归分析，通过将线性回归模型拟合到针对另一目标结构的不对称测量的一个目标结构的不对称测量的平面表示，线性回归模型不一定通过平面表示的原点拟合 。 然后可以从线性回归模型描述的梯度确定覆盖误差。

公开(公告)号：WO2012010458A1

公开(公告)日：2012-01-26

申请号：PCT/EP2011/061822

申请日：2011-07-12

Applicant: ASML NETHERLANDS B.V. ,  VAN DER SCHAAR, Maurits ,  DEN BOEF, Arie ,  FUCHS, Andreas ,  COOGANS, Martyn ,  BHATTACHARYYA, Kaustuve ,  KUBIS, Michael ,  MORGAN, Stephen

Inventor： VAN DER SCHAAR, Maurits ,  DEN BOEF, Arie ,  FUCHS, Andreas ,  COOGANS, Martyn ,  BHATTACHARYYA, Kaustuve ,  KUBIS, Michael ,  MORGAN, Stephen

IPC: G03F7/20

CPC classification number: A01H1/06 ,  A01G22/00 ,  C12N15/8201 ,  G03B27/52 ,  G03B27/53 ,  G03F7/705 ,  G03F7/70633

Abstract: A method of determining an overlay error. Measuring an overlay target having process-induced asymmetry. Constructing a model of the target. Modifying the model, e.g., by moving one of the structures to compensate for the asymmetry. Calculating an asymmetry-induced overlay error using the modified model. Determining an overlay error in a production target by subtracting the asymmetry-induced overlay error from a measured overlay error. In one example, the model is modified by varying asymmetry p (n'), p (n'') and the calculating an asymmetry-induced overlay error is repeated for a plurality of scatterometer measurement recipes and the step of determining an overlay error in a production target uses the calculated asymmetry-induced overlay errors to select an optimum scatterometer measurement recipe used to measure the production target.

Abstract translation: 确定重叠错误的方法。 测量具有过程引起的不对称性的覆盖目标。 构建目标模型。 修改模型，例如通过移动结构之一来补偿不对称性。 使用修改的模型计算不对称引起的覆盖误差。 通过从测量的重叠错误中减去不对称引起的覆盖误差来确定生产目标中的重叠错误。 在一个示例中，通过改变不对称p（n'），p（n“）修改模型，并且对于多个散射仪测量配方重复计算不对称引起的重叠误差，并且确定叠加误差的步骤 生产目标使用计算的不对称引起的重叠误差来选择用于测量生产目标的最佳散射仪测量配方。