公开(公告)号：DE112011102134T5

公开(公告)日：2013-04-04

申请号：DE112011102134

申请日：2011-06-08

Applicant: IBM

Inventor： HERRIN RUSSELL T ,  JAHNES CHRISTOPHER V ,  STAMPER ANTHONY K ,  WHITE ERIC J

IPC: B81C1/00 ,  B81B3/00 ,  H01H59/00

Abstract: Ein Verfahren zum Bilden mindestens eines Hohlraums (60b) eines mikroelektromechanischen Systems (MEMS) weist das Bilden einer ersten Hohlraum-Opferschicht (18) über einer Verdrahtungsschicht (14) und einem Substrat (10) auf. Das Verfahren weist ferner das Bilden einer Isolatorschicht (40) über der ersten Hohlraum-Opferschicht auf. Das Verfahren weist ferner das Durchführen eines reversen Damaszener-Rückätzverfahrens auf der Isolatorschicht auf. Das Verfahren weist ferner das Planarisieren der Isolatorschicht und der ersten Hohlraum-Opferschicht auf. Das Verfahren weist ferner das Austreiben oder Ablösen der ersten Hohlraum-Opferschicht zu einer planaren Fläche für einen ersten Hohlraum (60b) des MEMS auf.

公开(公告)号：GB2494824A

公开(公告)日：2013-03-20

申请号：GB201300040

申请日：2011-06-15

Applicant: IBM

Inventor： STAMPER ANTHONY K ,  JAHNES CHRISTOPHER VINCENT

IPC: B81C1/00 ,  H01H1/00 ,  H01H59/00

Abstract: A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.

公开(公告)号：DE112010003412T5

公开(公告)日：2012-08-16

申请号：DE112010003412

申请日：2010-08-12

Applicant: IBM

Inventor： STAMPER ANTHONY K ,  ANDERSON FELIX P ,  MCDEVITT THOMAS L

IPC: B81C1/00

Abstract: Integrierte MEMS-Schalter, Entwicklungsstrukturen und Verfahren zum Herstellen solcher Schalter werden bereitgestellt. Zu dem Verfahren gehört das Bilden wenigstens eines Vorsprungs (32a) von Opfermaterial (36) auf einer Seite einer Schalteinheit (34), die von dem Opfermaterial umgeben ist. Das Verfahren enthält ferner das Entfernen des Opfermaterials durch wenigstens eine Öffnung (40), die auf delteinheit gebildet wird, und das Verschließen der wenigstens einen Öffnung mit einem Deckmaterial (42).

公开(公告)号：CA2708207A1

公开(公告)日：2009-08-20

申请号：CA2708207

申请日：2009-02-11

Applicant: IBM

Inventor： LINDGREN PETER J ,  SPROGIS EDMUND J ,  STAMPER ANTHONY K ,  STEIN KENNETH J

IPC: H01L23/48

Abstract: A through substrate (10) via includes an annular conductor layer at a periphery of a through substrate (10) aperture, and a plug layer (24) surrounded by the annular conductor layer. A method for fabricating the through substrate (10) via includes forming a blind aperture within a substrate (10) and successively forming and subsequently planarizing within the blind aperture a conformal conductor layer (20) that does not fill the aperture and plug layer (24) that does fill the aperture. The backside of the substrate (10) may then be planarized to expose at least the planarized conformal conductor layer. (20)

公开(公告)号：DE10110566B4

公开(公告)日：2007-03-01

申请号：DE10110566

申请日：2001-03-06

Applicant: IBM

Inventor： ELLIS-MONAGHAN JOHN J ,  FEENEY PAUL M ,  GEFFKEN ROBERT M ,  LANDIS HOWARD S ,  PREVITI-KELLY ROSEMARY A ,  BERGMAN-REUTER BETTE L ,  RUTTEN MATTHEW J ,  STAMPER ANTHONY K ,  YANKEE SALLY J

IPC: H01L23/50 ,  H01L23/52 ,  H01L21/312 ,  H01L21/314 ,  H01L21/3205 ,  H01L21/60 ,  H01L21/768 ,  H01L23/31 ,  H01L23/485 ,  H01L23/532

Abstract: A method and structure for a semiconductor chip includes a plurality of layers of interconnect metallurgy, at least one layer of deformable dielectric material over the interconnect metallurgy, at least one input/output bonding pad, and a support structure that includes a substantially rigid dielectric in a supporting relationship to the pad that avoids crushing the deformable dielectric material.

公开(公告)号：DE102012223979B4

公开(公告)日：2016-03-31

申请号：DE102012223979

申请日：2012-12-20

Applicant: IBM

Inventor： ADKISSON JAMES W ,  CANDRA PANGLIJEN ,  DUNBAR THOMAS J ,  GAMBINO JEFFREY P ,  JAFFE MARK D ,  STAMPER ANTHONY K ,  WOLF RANDY L

IPC: B81B7/02 ,  B81C1/00 ,  H01L41/04 ,  H03H9/25

Abstract: Elektrisches Filter, aufweisend mindestens eine piezoelektrische Filterstruktur (5, 5'), umfassend eine Vielzahl von Elektroden (14, 16), die auf einem piezoelektrischen Substrat (10) gebildet sind und eine rechtwinklig zu der Vielzahl von Elektroden (14, 16) angeordnete bewegliche Balkenstruktur (26, 26a, 26b, 26c, 26d), die über der mindestens einen Filterstruktur (5, 5') angeordnet ist und strukturiert ist, um bei Betätigung ausgelenkt zu werden und so die mindestens eine Filterstruktur (5, 5') kurzzuschließen, indem die Balkenstruktur (26, 26a, 26b, 26c, 26d) mit mindestens zwei Elektroden der Vielzahl von Elektroden (14, 16) in Kontakt kommt.

公开(公告)号：GB2494359B

公开(公告)日：2015-01-14

申请号：GB201300085

申请日：2011-06-08

Applicant: IBM

Inventor： HERRIN RUSSELL T ,  JAHNES CHRISTOPHER V ,  STAMPER ANTHONY K ,  WHITE ERIC J

IPC: B81C1/00 ,  H01H57/00

Abstract: A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes patterning a wiring layer to form at least one fixed plate and forming a sacrificial material on the wiring layer. The method further includes forming an insulator layer of one or more films over the at least one fixed plate and exposed portions of an underlying substrate to prevent formation of a reaction product between the wiring layer and a sacrificial material. The method further includes forming at least one MEMS beam that is moveable over the at least one fixed plate. The method further includes venting or stripping of the sacrificial material to form at least a first cavity.

公开(公告)号：GB2506770B

公开(公告)日：2014-08-20

申请号：GB201321363

申请日：2010-08-12

Applicant: IBM

Inventor： ANDERSON FELIX P ,  MCDEVITT THOMAS LEDDY ,  STAMPER ANTHONY K

IPC: B81B3/00 ,  B81C3/00 ,  H01H1/00

公开(公告)号：GB2505600A

公开(公告)日：2014-03-05

申请号：GB201321798

申请日：2012-03-14

Applicant: IBM

Inventor： JAHNES CHRISTOPHER V ,  STAMPER ANTHONY K

IPC: H01H1/00 ,  B81B3/00 ,  B81C1/00

Abstract: Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are provided. The method of forming a MEMS structure includes forming fixed actuator electrodes (115) and a contact point on a substrate. The method further includes forming a MEMS beam (100) over the fixed actuator electrodes and the contact point. The method further includes forming an array of actuator electrodes (105') in alignment with portions of the fixed actuator electrodes, which are sized and dimensioned to prevent the MEMS beam from collapsing on the fixed actuator electrodes after repeating cycling. The array of actuator electrodes are formed in direct contact with at least one of an underside of the MEMS beam and a surface of the fixed actuator electrodes.

公开(公告)号：GB2498264A

公开(公告)日：2013-07-10

申请号：GB201300017

申请日：2013-01-02

Applicant: IBM

Inventor： JAHNES CHRISTOPHER VINCENT ,  STAMPER ANTHONY K

IPC: B81B3/00 ,  H01G5/18

Abstract: A MEMS cantilever has a first wide portion attached to a support and a second narrower portion attached to the first portion. Tapered cantilever portions and beam structures having narrow and tapered portions are also described (figure 10). The reduction in width of the beam or cantilever in the vicinity of the pull-in portion reduces the occurrence of snap down when the structure is used as a varactor. The MEMS beam and cantilever structures may also be used for RF devices, contact switches or bulk acoustic wave resonators.