公开(公告)号：DE10031821B4

公开(公告)日：2006-06-14

申请号：DE10031821

申请日：2000-06-30

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： WIRTH RALPH ,  ZULL HERIBERT ,  LINDER NORBERT

IPC: H01H33/00 ,  H01L33/14 ,  H01L33/20 ,  H01L33/38

公开(公告)号：DE102004057802A1

公开(公告)日：2006-06-01

申请号：DE102004057802

申请日：2004-11-30

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： SCHMID WOLFGANG ,  WIRTH RALPH ,  STREUBEL KLAUS

IPC: H01S5/183 ,  H01L33/10 ,  H01L33/46 ,  H01S5/14

Abstract: The first mirror comprises a metal layer (4). An intermediate layer (3) is coated on the side of the metal layer facing the active zone. This layer (3) comprises a material which is opaque to light and electrically-conductive. The light-emitting semiconductor component is provided with an optical resonator for production of incoherent radiation as a resonant cavity light-emitting diode (RCLED). It alternatively operates with an external optical resonator producing coherent radiation as a vertical external cavity, surface-emitting laser (VECSEL).

公开(公告)号：DE102004026231A1

公开(公告)日：2005-12-22

申请号：DE102004026231

申请日：2004-05-28

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： ILLEK STEFAN ,  STEIN WILHELM ,  WIRTH RALPH ,  WALTER ROBERT

IPC: H01L33/02 ,  H01L21/20 ,  H01L21/24 ,  H01L21/363 ,  H01L21/76 ,  H01L33/00 ,  H01L33/42 ,  H01S5/042 ,  H01S5/06

公开(公告)号：DE102004025684A1

公开(公告)日：2005-11-17

申请号：DE102004025684

申请日：2004-05-26

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： WIRTH RALPH

IPC: H01L23/525 ,  H01L31/10 ,  H01L33/30 ,  H01L33/62 ,  H01L33/00

Abstract: An electric contact structure (18) is arranged on semiconductor functional areas (10) in manner electrically connected to one of areas while separate from a defect range (12) present in the area. The semiconductor functional areas are formed on a carrier layer (7). The carrier layer is formed of an epitaxial growth substrate of a semiconductor layer sequence. An independent claim is also included for a method of fabricating an electric contact structure for an optoelectronic semiconductor chip.

公开(公告)号：DE102005007601A1

公开(公告)日：2005-09-08

申请号：DE102005007601

申请日：2005-02-18

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： WIRTH RALPH ,  ILLEK STEFAN ,  EISSLER DIETER ,  BRUNNER HERBERT

IPC: H01L31/0224 ,  H01L33/38 ,  H01L33/00 ,  H01L31/102 ,  H01S5/02

Abstract: The component has a functional semiconductor area (2) with an active zone (400) and a lateral principal direction of extension. The area is provided with a breakthrough in the active zone. A connecting conductor material (8) is electrically isolated from the active zone in a subarea of the breakthrough and is arranged in a region of the breakthrough. The breakthrough is partially covered by an insulating material (10). Independent claims are also included for the following: (A) a device with optoelectronic components (B) a method for manufacturing an optoelectronic component.

公开(公告)号：DE10308322A1

公开(公告)日：2004-08-19

申请号：DE10308322

申请日：2003-02-26

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： PLOESL ANDREAS ,  ILLEK STEFAN ,  STAUSS PETER ,  WEGLEITER WALTER ,  WIRTH RALPH ,  STEIN WILHELM ,  PIETZONKA INES ,  DIEPOLD GUDRUN

IPC: H01L33/30 ,  H01L33/40 ,  H01L33/00 ,  H01L21/283

Abstract: A process for preparation of an electrical contact region on an n-conductive AlGaInP-based layer by:application of an electrical contact material containng Au and at least one doping material, i.e. an element from the group Ge, Si, Sn, and Te, and of tempering the n-conductive AlGaInP-based layer. An independent claim is included for a structural element having an epitaxial semiconductor layer series with an electromagnetic radiation emitting active zone.

公开(公告)号：DE102004004780A1

公开(公告)日：2004-08-19

申请号：DE102004004780

申请日：2004-01-30

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： ILLEK STEFAN ,  PLOESL ANDREAS ,  STAUSS PETER ,  DIEPOLD GUDRUN ,  PIETZONKA INES ,  STEIN WILHELM ,  WIRTH RALPH ,  WEGLEITER WALTER

IPC: H01L33/00 ,  H01L33/30 ,  H01L33/40

Abstract: Preparation of a structural element with an electrical contact region by:preparation of an epitaxially grown semiconductor series including an n-conductive AlGaIlP or AlGaInSAs-based external layer with an active zone emitting electromagnetic radiation, and application of an electrical contact material, which includes Au and doping material to the external layer, this material containing at least one of Ge, Si, Sn, and Te, and tempering of the external layer. An independent claim is included for a structural element as described above.

公开(公告)号：DE10261676A1

公开(公告)日：2004-07-22

申请号：DE10261676

申请日：2002-12-31

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： STEIN WILHELM ,  ALBRECHT TONY ,  WIRTH RALPH

IPC: H01L33/14 ,  H01L33/42 ,  H01L33/00

Abstract: A light emitting diode chip comprises an epitaxial semiconductor sequence (SS) having a protective layer, an electromagnetic radiation emitting active zone and an electrical contact structure, which has a radiation permeable current increasing layer containing ZnO and an electrical junction layer, and in the transition from the junction layer to the protective layer in operation of the chip the whole or almost the whole current flows via the current increasing layer into the SS.

公开(公告)号：DE10245632A1

公开(公告)日：2004-04-15

申请号：DE10245632

申请日：2002-09-30

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： STEIN WILHELM ,  WIRTH RALPH

IPC: H01L33/10 ,  H01L33/14 ,  H01L33/20 ,  H01L33/00

Abstract: Between active layer (4) and light exit structures (60), a reflective layer (70) intervenes. This has a number of beam windows (71). Through these, electromagnetic radiation produced in the active layer, reaches exit layer (6). The reflective layer returns a fraction of the light reflected from the exit structures, back to structures (60), before it can return into active layer (4). An Independent claim is included for the method of manufacture.

公开(公告)号：DE10253908A1

公开(公告)日：2004-04-08

申请号：DE10253908

申请日：2002-11-19

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： WIRTH RALPH ,  KARNUTSCH CHRISTIAN ,  STREUBEL KLAUS

IPC: H01L33/10 ,  H01L33/00

Abstract: The radiation emitting semiconducting component has a radiation generating active layer (1) arranged between two distributed Bragg reflectors (21,22) forming an optical resonator, whereby the thickness (D) of the active layer is greater than the wavelength (lambda) of the optical resonator. The thickness of the active layer is an integral multiple of the wavelength of the optical resonator.