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公开(公告)号：US5926716A
公开(公告)日：1999-07-20
申请号：US829255
申请日：1997-03-31
Applicant: Dirk Tobben , Peter Weigand
Inventor： Dirk Tobben , Peter Weigand
IPC: H01L27/04 , B81B3/00 , H01L21/02 , H01L21/822 , H01L21/8242 , H01L27/108 , H01L21/20
CPC classification number: B81C1/00111 , H01L27/10852 , H01L28/87 , H01L28/91 , B81C2201/0109 , B81C2201/0159 , H01L28/88 , H01L28/92
Abstract: A method for forming a microstructure includes photolithographically forming a vertically extending post on a portion of a surface of a substrate to provide a first structure. A flowable, sacrificial material is deposited over a surface of the first structure. The flowable, sacrificial materially flows off the top surface and sidewall portions of the post onto adjacent portions of the surface of the substrate to provide a second structure. A non-sacrificial material is deposited over a surface of the second structure. The non-sacrificial material is deposited to conform to the surface of the second structure. The non-sacrificial is deposited over the sacrificial material, over the sidewall portions and over the top surface of the post. The deposited sacrificial material is selectively removed while the non-sacrificial material remains to form a third structure with a horizontal member provided by the non-sacrificial material. The horizontal member is supported a predetermined distance above the surface of the substrate by a lower portion of the post. The flowable material is a flowable oxide, for example, hydrogensilsesquioxane glass, and the post has a width less than 20 .mu.m. The resulting structure, formed with a single photolithographic step, is used for supporting a capacitor deposited over it. The capacitor is formed as a sequence of deposition steps; i.e., depositing a first conductive layer over a surface of the support structure; depositing a dielectric layer over the conductive layer; and depositing a second conductive layer over the dielectric layer.
Abstract translation: 一种用于形成微结构的方法包括光刻地形成垂直延伸的柱体，以在衬底表面的一部分上提供第一结构。 可流动的牺牲材料沉积在第一结构的表面上。 可流动的牺牲物质地从柱的顶表面和侧壁部分流出到衬底的表面的相邻部分上以提供第二结构。 非牺牲材料沉积在第二结构的表面上。 沉积非牺牲材料以符合第二结构的表面。 非牺牲材料沉积在牺牲材料上，在侧壁部分上方并在柱的顶表面上方。 选择性地去除沉积的牺牲材料，同时非牺牲材料保留以形成具有由非牺牲材料提供的水平构件的第三结构。 水平构件通过柱的下部支撑在基板的表面上方预定距离。 可流动材料是可流动的氧化物，例如氢倍半硅氧烷玻璃，柱的宽度小于20μm。 用单个光刻步骤形成的所得结构用于支撑沉积在其上的电容器。 电容器形成为一系列沉积步骤; 即在支撑结构的表面上沉积第一导电层; 在导电层上沉积介电层; 以及在所述电介质层上沉积第二导电层。
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252.发明授权
公开(公告)号：US5658698A
公开(公告)日：1997-08-19
申请号：US378610
申请日：1995-01-26
Applicant: Takayuki Yagi , Masatake Akaike
Inventor： Takayuki Yagi , Masatake Akaike
CPC classification number: B81C1/0092 , B81C1/00936 , H01H59/0009 , H02N1/006 , B81B2203/0118 , B81C2201/0107 , B81C2201/0109 , B81C2203/031
Abstract: A microstructure comprising a substrate (1), a patterned structure (beam member) (2) suspended over the substrate (1) with an air-space (4) therebetween and supporting structure (3) for suspending the patterned structure (2) over the substrate (1).The microstructure is prepared by using a sacrificial layer (7) which is removed to form the space between the substrate (1) and the patterned structure (2) adhered to the sacrificial layer. In the case of using resin as the material of the sacrificial layer, the sacrificial layer can be removed without causing sticking, and an electrode can be provided on the patterned structure.The microstructure can have application as electrostatic actuator etc., depending on choice of shape and composition.
Abstract translation: 一种微结构，其包括衬底（1），悬挂在衬底（1）上的图案化结构（梁构件）（2），其间具有空气空间（4）和用于将图案化结构（2）悬挂在其上的支撑结构（3） 基板（1）。 通过使用牺牲层（7）来制备微结构，所述牺牲层被除去以形成衬底（1）和附着到牺牲层的图案化结构（2）之间的空间。 在使用树脂作为牺牲层的材料的情况下，可以除去牺牲层而不引起粘附，并且可以在图案化结构上提供电极。 根据形状和组成的选择，微结构可以用作静电致动器等。
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253.发明授权
公开(公告)号：US5439552A
公开(公告)日：1995-08-08
申请号：US145697
申请日：1993-11-04
Applicant: Jean-Marc Moret
Inventor： Jean-Marc Moret
IPC: H01L21/302 , B81B3/00 , C23C16/01 , H01H1/00 , H01L21/3065 , B44C1/22
CPC classification number: B81C1/0015 , C23C16/01 , H01H1/0036 , B81C2201/0109 , B81C2201/0132
Abstract: The invention concerns a fabrication process of at least one generally elated structural element (14) on a substrate (12) in a first material and having a substantially flat upper face (13), said element (14) realized in a second material comprising at least a first wing (14a) parallel to a plan perpendicular to said upper face (13).
Abstract translation: 本发明涉及在第一材料中的衬底（12）上的至少一个基本上细长的结构元件（14）的制造工艺，并且具有基本平坦的上表面（13），所述元件（14）以第二材料实现，包括 至少一个平行于垂直于所述上表面（13）的平面的第一翼（14a）。
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公开(公告)号：US20240343558A1
公开(公告)日：2024-10-17
申请号：US18632684
申请日：2024-04-11
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Petteri KILPINEN , Marko PEUSSA , Antti IIHOLA , Altti TORKKELI
CPC classification number: B81B3/0072 , B81B3/001 , B81C1/00666 , B81C1/00968 , B81B2201/0235 , B81B2201/0242 , B81B2201/0264 , B81B2203/0307 , B81B2203/04 , B81B2207/096 , B81C2201/0109 , B81C2201/0132 , B81C2201/0133 , B81C2203/0109 , B81C2203/036
Abstract: A device is provided that includes a handle layer with at least one cavity and suspension structure, a patterned polycrystalline silicon (poly-Si) first device layer, where at least one structural element is suspended by the structure, and may include a seismic element. A second electrically insulating layer is present, followed by a second device layer of patterned single-crystal silicon (mono-Si) with at least one moveably suspended seismic element above the first layer. A cap layer finalizes the structure, with the handle layer, device layers, and the cap layer forming an enclosure's walls. The first and second insulating layers bond the handle and device layers. The enclosure includes at least one seismic element from the second device layer, and at least one static and moveable electrode for motion detection or causation, with the static electrode in the first device layer.
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255.发明公开公开(公告)号：US20240253977A1
公开(公告)日：2024-08-01
申请号：US18414932
申请日：2024-01-17
Applicant: Infineon Technologies AG
Inventor： Hutomo Suryo Wasisto , Sebastian Anzinger , Fabian Streb
CPC classification number: B81C1/00182 , B81B3/0027 , B81B2201/0257 , B81B2203/0127 , B81C2201/0109 , B81C2201/0143 , B81C2201/0149 , B81C2201/0154
Abstract: In accordance with an embodiment, a method producing a microelectromechanical system (MEMS) device includes: providing a substrate comprising a first substrate surface and an opposite second substrate surface, wherein the substrate comprises a sacrificial layer arranged at the first substrate surface; depositing a membrane material layer onto the sacrificial layer; the membrane material layer forms a free-standing membrane structure covering the cavity; and creating nanostructures in at least one of a first membrane surface or an opposite second membrane surface of the membrane material layer, wherein the nanostructures protrude from the respective membrane surface of the membrane material layer, and the nanostructures are created by applying a laser structuring process.
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Patent Agency Ranking
公开(公告)号：US20240067519A1
公开(公告)日：2024-02-29
申请号：US18212617
申请日：2023-06-21
Applicant: Texas Instruments Incorporated
Inventor： John Wesley Hamlin , Kathleen Rose Ferreira , Sean C. O'Brien , Jose A. Martinez
CPC classification number: B81C1/00666 , B81B3/0072 , G02B26/0833 , B81B2201/042 , B81B2203/0109 , B81B2203/0118 , B81C2201/0108 , B81C2201/0109 , B81C2201/017
Abstract: Example methods, systems, and apparatus described herein provide a minimally invasive technique of controlling shape and stress in a MEMS device. An example method includes depositing a layer of material continuously across a semiconductor wafer, exposing the layer of material to oxygen plasma to increase a relative amount of oxygen within the layer of material; and etching the layer of material after exposing the layer of material to the oxygen plasma.
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公开(公告)号：US11847851B2
公开(公告)日：2023-12-19
申请号：US17675832
申请日：2022-02-18
Applicant: INVENSENSE, INC.
Inventor： Julius Ming-Lin Tsai , Mike Daneman , Sanjiv Kapoor
CPC classification number: G06V40/1306 , B06B1/067 , B06B1/0666 , B81B7/007 , B81C1/00238 , B81C1/00246 , B81C1/00301 , G01H11/08 , B06B2201/70 , B81B2201/0271 , B81B2201/032 , B81B2203/0127 , B81B2207/012 , B81B2207/015 , B81C2201/0105 , B81C2201/0109 , B81C2203/035 , B81C2203/036 , B81C2203/0792
Abstract: Microelectromechanical (MEMS) devices and associated methods are disclosed. Piezoelectric MEMS transducers (PMUTs) suitable for integration with complementary metal oxide semiconductor (CMOS) integrated circuit (IC), as well as PMUT arrays having high fill factor for fingerprint sensing, are described.
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公开(公告)号：US20230345185A1
公开(公告)日：2023-10-26
申请号：US18163865
申请日：2023-02-02
Applicant: DB HiTek Co., Ltd.
Inventor： Seok Young LEE
CPC classification number: H04R19/04 , B81B3/001 , B81C1/00968 , H04R31/006 , H04R31/003 , H04R7/04 , H04R7/18 , H04R19/005 , B81B2201/0257 , B81B2203/0127 , B81B2203/04 , B81C2201/0109 , B81C2201/013 , H04R2201/003
Abstract: Provided is a MEMS microphone structure (1) and, more particularly, to a MEMS microphone structure (1) that ensures excellent sensitivity by including and/or forming a lower electrode (410) and an upper electrode (430) with a diaphragm (110) in a bending area (A1) so that the maximum bending displacement of the diaphragm (110) is controlled by a dielectrophoretic (DFP) force together with sound pressure.
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公开(公告)号：US20230247372A1
公开(公告)日：2023-08-03
申请号：US18158911
申请日：2023-01-24
Inventor： Samer DAGHER
CPC classification number: H04R19/04 , B81B3/007 , B81C1/00658 , H04R31/00 , B81B2201/0257 , B81B2203/0127 , B81B2203/0315 , B81C2201/0109 , B81C2201/0133 , H04R2201/003
Abstract: A method for manufacturing an electroacoustic transducer includes a frame; an element movable relative to the frame, the movable element including a membrane and a membrane rigidifying structure; a first transmission arm, the movable element being coupled to one end of the first transmission arm; in which method the membrane of the movable element is moved away from the frame by using a sacrificial layer of greater thickness at least at the periphery of the membrane.
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260.发明申请公开(公告)号：US20180244514A1
公开(公告)日：2018-08-30
申请号：US15957058
申请日：2018-04-19
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： Christopher V. JAHNES , Anthony K. STAMPER
CPC classification number: B81B3/0072 , B81B3/0021 , B81B2201/01 , B81B2201/014 , B81B2203/0118 , B81B2203/0315 , B81B2203/04 , B81C1/0015 , B81C1/00365 , B81C1/00476 , B81C1/00619 , B81C1/00626 , B81C1/00666 , B81C2201/0109 , B81C2201/013 , B81C2201/0167 , B81C2201/017 , B81C2203/0136 , B81C2203/0172 , G06F17/5068 , G06F17/5072 , H01H1/0036 , H01H57/00 , H01H59/0009 , H01H2057/006 , H01L41/1136 , H01L2924/0002 , Y10S438/937 , Y10T29/42 , Y10T29/435 , Y10T29/49002 , Y10T29/49105 , Y10T29/49121 , Y10T29/49126 , Y10T29/4913 , Y10T29/49155 , Y10T29/5313 , H01L2924/00
Abstract: A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.
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