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    PRECISION IN STEREOSCOPIC MEASUREMENTS USING A PRE-DEPOSITION LAYER
    52.
    发明公开
    PRECISION IN STEREOSCOPIC MEASUREMENTS USING A PRE-DEPOSITION LAYER 审中-公开

    公开(公告)号：US20240153738A1

    公开(公告)日：2024-05-09

    申请号：US17983225

    申请日：2022-11-08

    Applicant: APPLIED MATERIALS ISRAEL LTD.

    Inventor： Yehuda Zur

    IPC: H01J37/28 ,  H01J37/22

    CPC classification number: H01J37/28 ,  H01J37/222 ,  H01J2237/2815

    Abstract: A method of determining the depth of a hole milled into a first region of a sample, the method comprising: positioning the sample in a processing chamber having a charged particle beam column; depositing material directly over a top surface of the sample in a second region of the sample adjacent to the first region; milling the hole in the first region of the sample using a charged particle beam generated by the charged particle beam column, wherein the hole abuts the material deposited over the top surface and includes a sidewall that extends from a bottom surface of the hole to an interface between the deposited material and the top surface of the sample; and using stereoscopic measurement techniques to calculate the depth of the hole based on distance measurements between a first point along an interface between the material and the top surface and a second point along a bottom surface of the hole.

    Method for calibrating a scanning charged particle microscope
    54.
    发明授权
    Method for calibrating a scanning charged particle microscope 有权

    公开(公告)号：US11972922B2

    公开(公告)日：2024-04-30

    申请号：US18126322

    申请日：2023-03-24

    Applicant: ASML Netherlands B.V.

    Inventor： Hermanus Adrianus Dillen ,  Wim Tjibbo Tel ,  Willem Louis Van Mierlo

    IPC: H01J37/28 ,  H01J37/22

    CPC classification number: H01J37/28 ,  H01J37/222 ,  H01J2237/2826

    Abstract: A method for calibrating a scanning charged particle microscope, such as a scanning electron microscope (SEM), is provided. The method includes dividing a wafer into a plurality of regions; preparing, on each of the plurality of regions, a pattern including a first periodic structure interleaved with a second periodic structure, the first and second periodic structures having an induced offset; determining an actual pitch the first and second periodic structures and thereby determining actual induced offset on each of the plurality of regions; selecting a plurality of regions from among the plurality of regions; measuring, by the SEM, a pitch of first and second periodic structures on each of the plurality of regions; and performing linearity calibration on the SEM based on the determining and the measuring.

    Height measuring device and beam irradiation device
    56.
    发明授权
    Height measuring device and beam irradiation device 有权

    公开(公告)号：US11959735B2

    公开(公告)日：2024-04-16

    申请号：US16747942

    申请日：2020-01-21

    Applicant: Hitachi High-Technologies Corporation

    Inventor： Naoya Nakai ,  Yuichi Shimoda ,  Makoto Suzuki

    IPC: G01B11/06 ,  H01J37/20 ,  H01J37/28

    CPC classification number: G01B11/0608 ,  H01J37/20 ,  H01J37/28

    Abstract: An object of the present disclosure is to propose a height measuring device which performs height measurement with high accuracy at each height with a relatively simple configuration even when the sample surface height changes greatly. A height measuring device which includes a projection optical system configured to project a light ray onto an object to be measured and a detection optical system including a detection element configured to detect a reflected light ray from the object to be measured, where the projection optical system includes a light splitting element (103) which splits a trajectory of the light ray with which the object to be measured is irradiated into a plurality of parts, and thus it is possible to project a light ray to a predetermined position even when the object to be measured is located at a plurality of heights, is proposed.

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