公开(公告)号：KR101568469B1

公开(公告)日：2015-11-11

申请号：KR1020130082873

申请日：2013-07-15

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 하야시히데카즈 ,  사토요헤이 ,  오쿠치히사히 ,  도미타히로시 ,  미츠오카가즈유키 ,  요우겐 ,  오노히로키 ,  오리이다케히코 ,  도시마다카유키

IPC: H01L21/302

CPC classification number: H01L21/02101 ,  B08B7/0021 ,  H01L21/02041 ,  H01L21/02057 ,  H01L21/67017 ,  H01L21/67051 ,  H01L21/67109

Abstract: 본발명은, 기판을처리용기에반입할때까지의건조방지용불소함유유기용제의휘발및 처리용기내에있어서의불소함유유기용제의분해를억제할수 있는기판처리방법등을제공하는것을목적으로한다. 표면이제1 불소함유유기용제에의해덮인기판(W)을처리용기(31) 내에반입하고, 이처리용기(31)에, 비점이제1 불소함유유기용제보다낮은제2 불소함유유기용제를원료로하는고압유체를공급한다. 그리고처리용기(31) 내에상기제1 불소함유유기용제와제2 불소함유유기용제의혼합물의고압유체분위기를형성하여, 기판의표면을덮는제1 불소함유유기용제를제거하고, 처리용기(31) 내의유체를고압유체또는기체의상태로배출하여건조시킨기판(W)을얻는다.

公开(公告)号：KR1020150053244A

公开(公告)日：2015-05-15

申请号：KR1020140153622

申请日：2014-11-06

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 이와나가슈지 ,  니시야마타다시 ,  도미타히로시 ,  하세가와이즈미

IPC: H01L21/66 ,  H01L21/027

CPC classification number: G06T7/0004 ,  G06T2207/30148

Abstract: 웨이퍼의결함을분석함으로써, 잠재적인트러블을미연에방지한다. 기판의결함을분석하는장치로서, 피검사기판을촬상하는촬상장치와, 촬상된기판의화상에기초하여, 기판면내에서의결함의특징량을추출하는결함특징량추출부와, 복수의기판에대한상기결함의특징량을적산하여적산데이터(AH)를발생하는결함특징량적산부와, 적산한결함의특징량이소정의임계치를초과하고있는지여부를판정하는결함판정부와, 상기결함판정부에서의판정결과를출력하는출력부를가진다.

Abstract translation: 通过分析晶圆缺陷可以预防潜在的问题。 缺陷分析装置包括：感测装置，用于感测血液检查基板的图像; 缺陷特征量提取单元，基于所述基板的感测图像提取所述基板的表面上的缺陷的特征量; 缺陷特征量累积单元，累积多个基板的缺陷的特征量，并生成累积数据（AH）; 缺陷确定单元，用于确定所述缺陷的累积特征量是否超过规定的阈值; 以及输出单元，输出由所述缺陷判定单元做出的判定。

公开(公告)号：KR1020140074214A

公开(公告)日：2014-06-17

申请号：KR1020130149777

申请日：2013-12-04

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 하세가와이즈미 ,  도미타히로시 ,  이와나가슈지 ,  니시야마다다시

IPC: H01L21/027 ,  H01L21/66

CPC classification number: G03F7/7065 ,  G03F7/702 ,  G03F7/705 ,  H01L21/0273 ,  H01L22/00

Abstract: The objective of the present invention is to properly generate the reference image of a substrate and to properly inspect the defects of the substrate. The present invention relates to a method of generating the image of a wafer which is the reference of defect inspection, based on photographed substrate images after the wafer is photographed. The present invention includes a component separation process of separating the plane distribution Z of a pixel value in the photographed substrate images into pixel value distribution components by using a Zernike polynomial expression according to the substrate images, a Zernike index calculation process of calculating the Zernike index of each pixel value distribution component separated by the Zernike polynomial expression, a Zernike index calculation process of extracting a value which has a gap between each calculated Zernike index and a center value (1) and a preset value or more (2) from the center value according to a Zernike index having the same dimension, an image speciation process of specifying each substrate image having the extracted value, and an image generation process of generating the image of the wafer which is the reference of the defect inspection by mixing the specific substrate images.

Abstract translation: 本发明的目的是适当地产生衬底的参考图像并适当地检查衬底的缺陷。 本发明涉及一种基于在拍摄晶片之后拍摄的基板图像来生成作为缺陷检查参考的晶片的图像的方法。 本发明包括通过使用根据基板图像的泽尔尼克多项式表示将拍摄的基板图像中的像素值的平面分布Z分离成像素值分布分量的分量分离处理，计算泽恩日克索引的泽尼克数指数计算处理 由Zernike多项式表示分离的每个像素值分布分量，Zernike指数计算处理，从中心提取具有每个计算的Zernike指数与中心值（1）之间的间隔和预设值（2）的值 根据具有相同维度的泽尔尼克索引值，指定具有提取值的每个基底图像的图像形成处理以及通过混合特定基底产生作为缺陷检查的参考的晶片的图像的图像生成处理 图片。

公开(公告)号：KR1020140011269A

公开(公告)日：2014-01-28

申请号：KR1020130082873

申请日：2013-07-15

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 하야시히데카즈 ,  사토요헤이 ,  오쿠치히사히 ,  도미타히로시 ,  미츠오카가즈유키 ,  요우겐 ,  오노히로키 ,  오리이다케히코 ,  도시마다카유키

IPC: H01L21/302

CPC classification number: H01L21/02101 ,  B08B7/0021 ,  H01L21/02041 ,  H01L21/02057 ,  H01L21/67017 ,  H01L21/67051 ,  H01L21/67109

Abstract: The purpose of the present invention is to provide a substrate processing method etc. capable of suppressing the volatilization of a fluorine-containing organic solvent for dry prevention until a substrate is carried into a processing container, and the decomposition of the fluorine-containing organic solvent within the processing container. A substrate (W) in which the surface is covered by a first fluorine-containing organic solvent is carried into a processing container (31). A high pressure fluid made of a second fluorine-containing organic solvent in which the boiling point is lower than the first fluorine-containing organic solvent is provided to the processing container (31). A high pressure fluid condition of a compound of the first and second fluorine-containing organic solvents is formed within the processing container (31). The first fluorine-containing organic solvent which covers the surface of the substrate is removed. A dried substrate (W) is obtained by discharging the fluid within the processing container (31) as the state of the high pressure fluid or gas. [Reference numerals] (321) Feeding unit; (5) Control unit

Abstract translation: 本发明的目的是提供一种能够抑制用于干燥的含氟有机溶剂的挥发直到基材被运送到处理容器中的基板处理方法等，并且含氟有机溶剂的分解 在处理容器内。 表面被第一含氟有机溶剂覆盖的基板（W）被携带到处理容器（31）中。 将由沸点低于第一含氟有机溶剂的第二含氟有机溶剂制成的高压流体提供给处理容器（31）。 第一和第二含氟有机溶剂的化合物的高压流体状态形成在处理容器（31）内。 除去覆盖基材表面的第一含氟有机溶剂。 通过将处理容器（31）内的流体作为高压流体或气体的状态排出来获得干燥的基材（W）。 （附图标记）（321）进给单元; （5）控制单元

公开(公告)号：KR101074441B1

公开(公告)日：2011-10-17

申请号：KR1020087003967

申请日：2006-09-13

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 다나카미치오 ,  시노즈카신이치 ,  다도코로마사히데 ,  오가타구니에 ,  도미타히로시 ,  우에무라료이치

IPC: G03F7/26 ,  H01L21/027 ,  H01L21/66

CPC classification number: G03F7/40 ,  G03F7/38

Abstract: 패턴형성장치(1)는현상처리후에기판(W)에형성된레지스트패턴의사이드월 앵글(SWA)을측정검사하는검사장치(400)와, 상기현상처리후의레지스트패턴의사이드월 앵글(SWA)의목표값과상기검사장치(400)에의한사이드월 앵글(SWA)의검사결과의차분에기초하여상기현상처리후의사이드월 앵글(SWA)이상기목표값에근사하도록, 상기제1 가열처리(71∼74) 또는상기제2 가열처리(84∼89)에서의처리조건의설정을행하는제어부(500)를구비한다.

公开(公告)号：KR101068596B1

公开(公告)日：2011-09-30

申请号：KR1020077018636

申请日：2006-02-08

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 지요유사카메그미 ,  도미타히로시 ,  다도코로마사히데

IPC: H01L21/027 ,  G03F7/38 ,  H01L21/02

CPC classification number: H01L21/67109 ,  G03F7/38 ,  H01L21/67103 ,  H01L21/67178 ,  H01L21/67184 ,  H01L21/67248 ,  H01L21/67748

Abstract: 레지스트 패턴의 선폭이 웨이퍼면 내에서 균일하게 형성되도록, 열판의 온도 설정을 한다. PEB 장치의 열판은 복수의 열판 영역에 분할되어 있고, 각 열판 영역마다 온도 설정할 수 있다. 열판의 각 열판 영역에는, 열판에 적재되는 웨이퍼면 내의 온도를 조정하기 위한 온도 보정치가 각각 설정된다. 이 열판의 각 열판 영역의 온도 보정치는 열판에 있어서 열처리되어 형성되는 레지스트 패턴의 선폭과 온도 보정치의 상관으로부터 작성된 산출 모델에 의해 산출되어 설정된다. 산출 모델(M)은 레지스트 패턴의 선폭 측정치에 기초하여, 웨이퍼면 내의 선폭이 균일하게 되는 것과 같은 온도 보정치를 산출한다.

公开(公告)号：KR1020110081765A

公开(公告)日：2011-07-14

申请号：KR1020100140228

申请日：2010-12-31

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 타하라시게루 ,  야마시타후미코 ,  니시무라에이치 ,  오오이와토쿠히사 ,  마츠시타타카야 ,  도미타히로시

IPC: H01L21/02 ,  H01L21/67 ,  H01L21/3065

CPC classification number: H01L21/67028 ,  H01L21/02057 ,  H01L21/02049 ,  H01L21/02 ,  H01L21/02315 ,  H01L21/0234 ,  H01L21/0273 ,  H01L21/203 ,  H01L21/205 ,  H01L21/302 ,  H01L21/30621 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/76825 ,  H01L21/76826 ,  H05H1/46

Abstract: PURPOSE: A substrate cleaning method and a substrate cleaning apparatus are provided to remove by-production and residual fluorine without damage to a pattern in forming the laminated pattern of a silicon layer and an insulating layer through plasma etching. CONSTITUTION: In a substrate cleaning method and a substrate cleaning apparatus, a substrate is exposed to an HF gas to remove a by-product. The chemical compound gas includes hydrogen gas, carbon and hydrogen. Cleaning gas including rare gases are made plasma and are applied to the substrate to remove the RESIDUAL FLUORINE on the substrate.

Abstract translation: 目的：提供基板清洗方法和基板清洁装置，以通过等离子体蚀刻在形成硅层和绝缘层的层叠图案中不损害图案来除去副产物和残余氟。 构成：在基板清洗方法和基板清洗装置中，将基板暴露于HF气体中以除去副产物。 化合物气体包括氢气，碳和氢气。 包括稀有气体在内的清洁气体被制成等离子体，并且被施加到衬底上以除去衬底上的残留氟。

公开(公告)号：KR1020080049018A

公开(公告)日：2008-06-03

申请号：KR1020087004066

申请日：2006-09-13

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 오가타구니에 ,  도미타히로시 ,  다나카미치오 ,  우에무라료이치

IPC: G03F7/26 ,  G03F7/36 ,  H01L21/027

CPC classification number: G03F7/40 ,  G03F7/168 ,  G03F7/70616 ,  H01L21/67098

Abstract: Disclosed is a pattern-forming apparatus (1) for performing a sequence of processes including a first heat treatment for heating a substrate W to which a resist liquid has been applied, a exposure process for exposing the resist film into a predetermined pattern, a second heat treatment for expediting the chemical reaction in the resist film after exposure, a development process for developing the exposed resist film, and an etching process for removing an oxide film by using the resist pattern formed after the development process as a mask. This pattern-forming apparatus (1) comprises a test device (400) for measuring the state of the pattern formed after the etching process, and a control unit (500) for setting the conditions in the first heat treatment and/or the second heat treatment basing on the measurement results so that the in-plane states of the pattern of the substrate W after the etching process become uniform.

Abstract translation: 公开了一种图案形成装置（1），用于执行包括用于加热已经涂敷抗蚀剂液体的基板W的第一热处理，将抗蚀剂膜曝光成预定图案的曝光工序， 用于加速曝光后的抗蚀剂膜中的化学反应的热处理，用于显影曝光的抗蚀剂膜的显影处理以及通过使用在显影处理之后形成的抗蚀剂图案作为掩模去除氧化膜的蚀刻工艺。 该图案形成装置（1）包括用于测量在蚀刻处理之后形成的图案的状态的测试装置（400），以及用于设定第一热处理和/或第二热量中的条件的控制单元（500） 基于测量结果的处理，使得蚀刻工艺之后的衬底W的图案的面内状态变得均匀。

公开(公告)号：KR1020080049017A

公开(公告)日：2008-06-03

申请号：KR1020087003969

申请日：2006-09-13

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 오가타구니에 ,  도미타히로시 ,  다나카미치오 ,  우에무라료이치

IPC: G03F7/26 ,  H01L21/027 ,  H01L21/02 ,  H01L21/66

CPC classification number: H01L21/67225 ,  G03F7/168 ,  G03F7/3071 ,  G03F7/40 ,  H01L22/12 ,  H01L22/20 ,  H01L2924/0002 ,  G03F7/70616 ,  H01L21/67098 ,  H01L2924/00

Abstract: A pattern-forming apparatus (1) comprises a test device (400) for measuring the state of a resist pattern formed on a substrate W after development and outputting the first measurement result, and for measuring the state of a resist pattern formed on the substrate W after etching and outputting the second measurement result; a storage means (502) recorded with a correlation formula obtained from the first measurement result and the second measurement result; and a control unit (500) for setting the conditions in the first heat treatment and/or the second heat treatment basing on the difference between the target value of the pattern state after development and the first measurement result by obtaining the target value of the pattern state after development from the target value of the pattern state after etching based on the correlation formula.

Abstract translation: 图案形成装置（1）包括用于测量在显影后形成在基板W上的抗蚀剂图案的状态并输出第一测量结果的测试装置（400），并且用于测量形成在基板上的抗蚀剂图案的状态 W，并输出第二测量结果; 记录从第一测量结果和第二测量结果获得的相关公式的存储装置（502）; 以及控制单元（500），用于基于显影后的图案状态的目标值与第一测量结果之间的差异来设定第一热处理和/或第二热处理中的条件，通过获得图案的目标值 根据相关公式，从蚀刻后的图案状态的目标值开始后的状态。

公开(公告)号：KR1020080049016A

公开(公告)日：2008-06-03

申请号：KR1020087003967

申请日：2006-09-13

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 다나카미치오 ,  시노즈카신이치 ,  다도코로마사히데 ,  오가타구니에 ,  도미타히로시 ,  우에무라료이치

IPC: G03F7/26 ,  H01L21/027 ,  H01L21/66

CPC classification number: G03F7/40 ,  G03F7/38 ,  G03F7/3071 ,  G03F7/70616 ,  H01L21/67098 ,  H01L21/67225

Abstract: A pattern-forming apparatus (1) comprises a test device (400) for measuring the side wall angle SWA of a resist pattern which is formed on a substrate W after a development process, and a control unit (500) for setting the treatment conditions in the first heat treatment units (71-74) or the second heat treatment units (84-89) basing on the difference between the target value of the side wall angle SWA of the resist pattern after development process and the actual value of the side wall angle SWA measured by the test device (400) so that the side wall angle SWA after development approach the target value.

Abstract translation: 图案形成装置（1）包括用于测量在显影处理之后形成在基板W上的抗蚀剂图案的侧壁角度SWA的测试装置（400）和用于设定处理条件的控制单元（500） 在第一热处理单元（71-74）或第二热处理单元（84-89）中，基于显影处理后的抗蚀剂图案的侧壁角度SWA的目标值与侧面的实际值之差 通过测试装置（400）测量的壁角度SWA，使得开发后的侧壁角度SWA接近目标值。