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公开(公告)号:DE602004026725D1
公开(公告)日:2010-06-02
申请号:DE602004026725
申请日:2004-06-23
Applicant: LAM RES CORP
Inventor: HEMKER DAVID , REDEKER FRED C , BOYD JOHN , DE LARIOS JOHN M , RAVKIN MICHAEL , KOROLIK MIKHAIL
IPC: G03F7/20
Abstract: A method for processing a substrate is provided which includes generating a meniscus on the surface of the substrate and applying photolithography light through the meniscus to enable photolithography processing of a surface of the substrate.
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公开(公告)号:AT465435T
公开(公告)日:2010-05-15
申请号:AT04756062
申请日:2004-06-23
Applicant: LAM RES CORP
Inventor: HEMKER DAVID , REDEKER FRED , BOYD JOHN , DE LARIOS JOHN , RAVKIN MICHAEL , KOROLIK MIKHAIL
IPC: G03F7/20
Abstract: A method for processing a substrate is provided which includes generating a meniscus on the surface of the substrate and applying photolithography light through the meniscus to enable photolithography processing of a surface of the substrate.
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公开(公告)号:AU2003267272A1
公开(公告)日:2004-04-19
申请号:AU2003267272
申请日:2003-09-15
Applicant: LAM RES CORP
Inventor: GOTKIS YEHIEL , KISTLER RODNEY , OWCZARZ ALEKSANDER , HEMKER DAVID , BRIGHT NICOLAS J
IPC: G01N27/02 , H01L21/302 , H01L21/461 , G01N27/90
Abstract: A method and an apparatus for enhancement of the for measuring resistance-based features of a substrate is provided. The apparatus includes a sensor configured to detect a signal produced by a eddy current generated electromagnetic field. The magnetic field enhancing source is positioned to the alternative side of the object under measurement relative to the sensor to enable the sensitivity enhancing action. The sensitivity enhancing source increases the intensity of the eddy current generated in the object under measurement, and as a result the sensitivity of the sensor. A system enabled to determine a thickness of a layer and a method for determining a resistance-based feature characteristic are also provided.
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公开(公告)号:AU2003270533A8
公开(公告)日:2004-04-08
申请号:AU2003270533
申请日:2003-09-10
Applicant: LAM RES CORP
Inventor: KISTLER RODNEY , GOTKIS YEHIEL , BRIGHT NICOLAS , OWCZARZ ALEKSANDER , HEMKER DAVID
Abstract: A system and method of measuring a metallic layer on a substrate within a multi-step substrate process includes modifying a metallic layer on the substrate such as forming a metallic layer or removing at least a portion of the metallic layer. At least one sensor is positioned a predetermined distance from the surface of the substrate. The surface of the substrate is mapped to determine a uniformity of the metallic layer on the surface of the substrate.
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公开(公告)号:SG177912A1
公开(公告)日:2012-02-28
申请号:SG2011094984
申请日:2007-12-12
Applicant: LAM RES CORP
Inventor: BRIGHT NICOLAS , HEMKER DAVID , REDEKER FRITZ , DORDI YEZDI
Abstract: PROCESS INTEGRATION SCHEME TO LOWER OVERALL DIELECTRIC CONSTANT IN BEOL INTERCONNECT STRUCTURESAbstractBack-End of Line (BEoL) interconnect structures, and methods for their manufacture, are provided. The structures are characterized by narrower conductive lines and reduced overall dielectric constant values. Conformal diffusion barrier layers, and selectively formed capping layers, are used to isolate the conductive lines and vias from surrounding dielectric layers in the interconnect structures. The methods of the invention employ techniques to narrow the openings in photoresist masks in order to define narrower vias. More narrow vias increase the amount of misalignment that can be tolerated between the vias and the conductive linesFigure: 9B
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公开(公告)号:IL170852A
公开(公告)日:2010-06-30
申请号:IL17085205
申请日:2005-09-13
Applicant: III ANDREW D BAILEY , LAM RES CORP , LOHOKARE SHRIKANT P , HEMKER DAVID , COOK JOEL M
Inventor: III ANDREW D BAILEY , LOHOKARE SHRIKANT P , HEMKER DAVID , COOK JOEL M
IPC: B44C1/22 , H01L20060101 , H01L21/302 , H01L21/304 , H01L21/311 , H01L21/321 , H01L21/3213 , H01L21/4763 , H01L21/768 , H01L33/00
Abstract: A system and method for planarizing a patterned semiconductor substrate includes receiving a patterned semiconductor substrate. The patterned semiconductor substrate having a conductive interconnect material filling multiple of features in the pattern. The conductive interconnect material having an overburden portion. The overburden portion having a localized non-uniformity. A bulk portion of the overburden portion is removed to planarize the overburden portion. The substantially locally planarized overburden portion is mapped to determine a global non-uniformity. The substantially locally planarized overburden portion is etched to substantially remove the global non-uniformity.
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公开(公告)号:AT425547T
公开(公告)日:2009-03-15
申请号:AT02746618
申请日:2002-06-21
Applicant: LAM RES CORP
Inventor: YEN BI-MING , NI TUQIANG , LI LUMIN , HEMKER DAVID
IPC: H01J37/32 , H05H1/46 , H01L21/3065
Abstract: A plasma processing chamber is provided. The plasma processing chamber includes a bottom electrode configured to support a substrate and a top electrode located over the bottom electrode. The plasma processing chamber further includes a plasma confinement assembly designed to transition between a closed orientation and an open orientation. In the closed orientation, the plasma confinement assembly defines a first volume for plasma during processing, and in the open orientation, the plasma confinement assembly defines a second volume for plasma during processing which is larger than the first volume.
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公开(公告)号:SG174750A1
公开(公告)日:2011-10-28
申请号:SG2011062171
申请日:2007-08-28
Applicant: LAM RES CORP
Inventor: BOYD JOHN , DORDI YEZDI , ARUNAGIRI TIRUCHIRAPALLI , MOORING BENJAMIN W , PARKS JOHN , THIE WILLIAM , REDEKER FRITZ C , HOWALD ARTHUR M , SCHOEPP ALAN , HEMKER DAVID
Abstract: OF THE DISCLOSUREA cluster architecture and methods for processing a substrate are disclosed. The cluster architecture includes a lab-ambient controlled transfer module that is coupled to one or more wet substrate processing modules. The lab-ambient controlled transfer module and the one or more wet substrate processing modules are configured to manage a first ambient environment. A vacuum transfer module that is coupled to the lab-ambient controlled transfer module and one or more plasma processing modules is also provided. The vacuum transfer module and the one or more plasma processing modules are configured to manage a second ambient environment And, a controlled ambient transfer module that is coupled to the vacuum transfer module and one or more ambient processing modules is also included. The controlled ambient transfer module and the one or more ambient processing modules are configured to manage a third ambient environment. The cluster architecture therefore enables controlled processing of the substrate in either the first, second or third ambient environments, as well as during associated transitions. The embodiments also provide for efficient methods for filling a trench of a substrate.Figure 1
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公开(公告)号:IL170851A
公开(公告)日:2010-05-31
申请号:IL17085105
申请日:2005-09-13
Applicant: LAM RES CORP , III ANDREW D BAILEY , LOHOKARE SHRIKANT P , HEMKER DAVID , COOK JOEL M
Inventor: III ANDREW D BAILEY , LOHOKARE SHRIKANT P , HEMKER DAVID , COOK JOEL M
IPC: H01L21/3105 , H01L21/321 , H01L21/3213 , H01L21/768
Abstract: A system and method for planarizing a patterned semiconductor substrate includes receiving a patterned semiconductor substrate. The patterned semiconductor substrate having a conductive interconnect material filling multiple of features in the pattern. The conductive interconnect material having an overburden portion. The overburden portion includes a localized non-uniformity. An additional layer is formed on the overburden portion. The additional layer and the overburden portion are planarized. The planarizing process substantially entirely removes the additional layer.
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公开(公告)号:AT394789T
公开(公告)日:2008-05-15
申请号:AT00978613
申请日:2000-11-14
Applicant: LAM RES CORP
Inventor: BAILEY ANDREW , SCHOEPP ALAN , HEMKER DAVID , WILCOXSON MARK
IPC: C23C16/507 , H01J37/32 , B05D7/24 , H01L21/3065
Abstract: A plasma processing system for processing a substrate, is disclosed. The plasma processing system includes a single chamber, substantially azimuthally symmetric plasma processing chamber within which a plasma is both ignited and sustained for the processing. The plasma processing chamber has no separate plasma generation chamber. The plasma processing chamber has an upper end and a lower end. The plasma processing chamber includes a material that does not substantially react with the reactive gas chemistries that are delivered into the plasma processing chamber. In addition, the reactant gases that are flown into the plasma processing chamber are disclosed.
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