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    Reducing critical dimension variations caused by scattered light in functional structures formed by photolithographic imaging comprises using two masks, one with a reduced bright-field content
    21.
    发明专利
    Reducing critical dimension variations caused by scattered light in functional structures formed by photolithographic imaging comprises using two masks, one with a reduced bright-field content 未知

    公开(公告)号：DE102004057759A1

    公开(公告)日：2006-06-08

    申请号：DE102004057759

    申请日：2004-11-30

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： NOELSCHER CHRISTOPH ,  PFORR RAINER ,  KAMM FRANK-MICHAEL ,  ZIEBOLD RALF ,  HENNIG MARIO

    IPC: G03F7/20 ,  G03F1/00 ,  G03F1/36

    Abstract: Reducing critical dimension (CD) variations caused by scattered light in functional structures formed in a photoresist by photolithographic imaging through a mask comprises separating a target layout into two partial layouts, providing two masks (M1, M2) according to the partial layouts, where M1 has a reduced bright-field content; imaging the structures of M1 in the photoresist; and imaging the structures of M2 in the photoresist. Reducing critical dimension (CD) variations caused by scattered light in functional structures formed in a photoresist by photolithographic imaging through a mask, where the structures are arranged according to a target layout in sections of the mask adjacent to bright-field sections, comprises separating the target layout into two partial layouts, providing two masks (M1, M2) according to the partial layouts, where M1 has a reduced bright-field content and M2 has an arrangement of structures that will result in the target layout at the end of the process; imaging the structures of M1 in the photoresist, whereby CD variations in the structures are reduced because of the reduced bright-field content; and imaging the structures of M2 in the photoresist. Independent claims are also included for: (1) mask M1 for carrying out the above process, where the bright-field sections (21) adjacent to the sections (2) with the functional structures (3) are provided with opaque or semitransparent auxiliary sections (31); (2) mask M2 for carrying out the above process, where the structures in M2 are formed by opaque sections in or on a transparent support.

    27.
    发明专利
    未知

    公开(公告)号：DE19957542A1

    公开(公告)日：2001-07-05

    申请号：DE19957542

    申请日：1999-11-30

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： PFORR RAINER ,  FRIEDRICH CHRISTOPH ,  HEISSMEIER MICHAEL ,  MOUKARA MOLELA ,  GRIESINGER UWE ,  LUDWIG BURKHARD

    IPC: G03F1/30 ,  G03F1/00 ,  H01L21/027 ,  G03F1/14

    Abstract: An alternating phase mask having a branched structure containing two opaque segments is described. Two transparent surface segments are disposed on both sides of the segments or the components thereof, respectively. The surface segments are provided with phases that are displaced by 180°±Delta alpha, whereby Delta alpha a is not more than 25°. The surface segments are separated by at least one transparent surface boundary segment whose phase is situated between the phases of the adjacent surface segments.

    29.
    发明专利
    未知

    公开(公告)号：DE102006004230A1

    公开(公告)日：2007-08-09

    申请号：DE102006004230

    申请日：2006-01-30

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： HENNIG MARIO ,  PFORR RAINER ,  UNGER GERD

    IPC: G03F1/00 ,  G03F7/20 ,  G06F17/50

    Abstract: A layout is decomposed into partial patterns. An intermediate mask is drawn for each of the partial patterns. The intermediate masks are used in a mask stepper or scanner progressively for projection again into a common pattern on a test mask. A line width distribution LB(x,y) is determined from the test mask or from a test wafer exposed using the mask, and is converted into a distribution of dose corrections. The transmission T(x,y) of the respective intermediate masks is adapted based upon the calculated dose correction. This can be achieved using additional optical elements which are assigned to the intermediate masks and have shading structure elements, or by laser-induced rear-side introduction of shading elements in the quartz substrate of the intermediate masks themselves.

    30.
    发明专利
    未知

    公开(公告)号：DE102005003905A1

    公开(公告)日：2006-10-12

    申请号：DE102005003905

    申请日：2005-01-27

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： PFORR RAINER ,  MOUKARA MOLELA ,  MUELDERS THOMAS ,  HENNIG MARIO ,  ZEILER KARSTEN

    IPC: G03F7/20 ,  G03F1/00

    Abstract: An improvement of the imaging quality with simultaneous transfer of line-space gratings and peripheral structures including a MUX space is achieved using a quadrupole illumination whose poles are formed in elongate fashion and whose longitudinal axes are arranged perpendicular to the orientation of the lines of the line-space grating arranged on a mask. The structure imaging of the line-space grating is improved with regard to contrast, MEEF, and process window, while the geometrical fidelity of the peripheral structure, in particular of the MUX space, is stabilized over a wide depth of field range.

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