公开(公告)号：DE10129346A1

公开(公告)日：2003-01-09

申请号：DE10129346

申请日：2001-06-19

Applicant: INFINEON TECHNOLOGIES AG

Inventor： RUEB MICHAEL

IPC: H01L21/3065 ,  H01L21/78 ,  H01L29/423 ,  H01L29/78 ,  H01L21/306 ,  H01L21/301 ,  H01L21/336 ,  H01L21/784

Abstract: Production of semiconductor component comprises: preparing wafer having active regions for semiconductor components; forming recesses in the wafer from the wafer rear side below the active regions so that supporting lattice of wafer material remains between recesses; processing regions of the wafer exposed on base of the recesses; and cutting wafers above lattice to form semiconductor components. Production of a semiconductor component comprises: preparing a wafer with a front side (101) and a rear side (102), in which a number of active regions (20) for semiconductor components are provided; forming recesses (112) in the wafer from the rear side below the active regions so that supporting lattice (110) of wafer material remains between the recesses; processing the regions of the wafer exposed on the base (103) of the recesses; and cutting the wafers above the lattice to form number of semiconductor components. Preferred Features: The recesses are produced by etching. The wafers have crevice regions between the active regions. The crevice regions are removed on cutting the wafers.

公开(公告)号：DE102007009227B4

公开(公告)日：2009-01-02

申请号：DE102007009227

申请日：2007-02-26

Applicant: INFINEON TECHNOLOGIES AG

Inventor： TREU MICHAEL ,  RUPP ROLAND ,  RUEB MICHAEL

IPC: H01L29/872 ,  H01L21/329

Abstract: A semiconductor component is proposed which has a semiconductor body having a first semiconductor zone of the first conduction type, at least one first rectifying junction with respect to the first semiconductor zone, at least one second rectifying junction with respect to the first semiconductor zone, wherein the three rectifying junctions each have a barrier height of different magnitude.

公开(公告)号：DE102004063991A1

公开(公告)日：2008-05-08

申请号：DE102004063991

申请日：2004-10-29

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HIRLER FRANZ ,  WAHL UWE ,  MEYER THORSTEN ,  RUEB MICHAEL ,  WILLMEROTH ARMIN ,  SCHMITT MARKUS ,  TOLKSDORF CAROLIN ,  SCHAEFFER CARSTEN

IPC: H01L21/336 ,  H01L29/78

公开(公告)号：DE102005046007A1

公开(公告)日：2007-04-12

申请号：DE102005046007

申请日：2005-09-26

Applicant: INFINEON TECHNOLOGIES AG

Inventor： WILLMEROTH ARMIN ,  SCHMITT MARKUS ,  TOLKSDORF CAROLIN ,  RUEB MICHAEL ,  WAHL UWE

IPC: H01L29/78 ,  H01L29/06

Abstract: The component (1) has highly doped compensation cells (18) of p-type conduction. A drift zone (21) with complementary n-type conduction is provided, and a substrate (23) is in connection with a source region (20). Coupling layers or coupling structures are provided for electrical connection of the compensation cells with each other. The coupling layers are of p-type conduction and are in electrical connection with the source region.

公开(公告)号：DE10129346B4

公开(公告)日：2006-08-31

申请号：DE10129346

申请日：2001-06-19

Applicant: INFINEON TECHNOLOGIES AG

Inventor： RUEB MICHAEL

IPC: H01L21/301 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/336 ,  H01L21/78 ,  H01L29/423 ,  H01L29/78

公开(公告)号：AT334480T

公开(公告)日：2006-08-15

申请号：AT99929017

申请日：1999-04-22

Applicant: INFINEON TECHNOLOGIES AG

Inventor： DEBOY GERALD ,  STENGL JENS-PEER ,  STRACK HELMUT ,  WEBER HANS ,  GRAF HEIMO ,  RUEB MICHAEL ,  AHLERS DIRK

IPC: H01L21/336 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L29/78

Abstract: A semiconductor component has a semiconductor body comprising a blocking pn junction, a source zone of a first conductivity type connected to a first electrode and bordering on a zone forming the blocking pn junction of a second conductivity type complementary to the first conductivity type, and a drain zone of the first conductivity type connected to a second electrode. The side of the zone of the second conductivity type facing the drain zone forms a first surface, and in the region between the first surface and a second surface located between the first surface and the drain zone, comprises areas of the first and second conductivity type nested in one another. The second surface is positioned at a distance from the drain zone such that the areas of the first and second conductivity type nested in each other do not reach the drain zone.

公开(公告)号：DE10100438B4

公开(公告)日：2006-05-11

申请号：DE10100438

申请日：2001-01-08

Applicant: INFINEON TECHNOLOGIES AG

Inventor： RUEB MICHAEL ,  WERNER WOLFGANG ,  KOLB STEFAN

IPC: B81C1/00 ,  B81B3/00 ,  G01L9/00 ,  G01L9/12 ,  G01P15/08 ,  G01P15/125

公开(公告)号：DE10239868B4

公开(公告)日：2005-12-29

申请号：DE10239868

申请日：2002-08-29

Applicant: INFINEON TECHNOLOGIES AG

Inventor： RUEB MICHAEL

IPC: H01L21/261 ,  H01L21/331 ,  H01L29/06 ,  H01L21/336 ,  H01L29/739 ,  H01L29/78

公开(公告)号：DE10143515A1

公开(公告)日：2003-04-03

申请号：DE10143515

申请日：2001-09-05

Applicant: INFINEON TECHNOLOGIES AG

Inventor： RUEB MICHAEL ,  UMBACH FRANK ,  WERNER WOLFGANG

IPC: G03F1/20 ,  H01L21/266 ,  H01L29/06 ,  G03F9/00

Abstract: Mask arrangement comprises a number of mask elements each having a mask pattern (11, 12, 13). The mask elements are arranged in a predetermined spatial relationship. The mask arrangement is formed with a combination mask pattern by interacting and/or overlapping the mask pattern. An Independent claim is also included for a process for the production of the mask arrangement. A first mask element with a first mask pattern and a second mask element with a second mask pattern are arranged in the mask elements. The mask elements are connected together in the arrangement either directly or via a connecting region which is formed as an adhesive layer, semiconductor layer and/or silicon oxide layer.

公开(公告)号：DE102007009227A1

公开(公告)日：2008-08-28

申请号：DE102007009227

申请日：2007-02-26

Applicant: INFINEON TECHNOLOGIES AG

Inventor： TREU MICHAEL ,  RUPP ROLAND ,  RUEB MICHAEL

IPC: H01L29/872

Abstract: A semiconductor component is proposed which has a semiconductor body having a first semiconductor zone of the first conduction type, at least one first rectifying junction with respect to the first semiconductor zone, at least one second rectifying junction with respect to the first semiconductor zone, wherein the three rectifying junctions each have a barrier height of different magnitude.