公开(公告)号：DE60105061T2

公开(公告)日：2005-09-01

申请号：DE60105061

申请日：2001-12-21

Applicant: LAM RES CORP

Inventor： OWCZARZ ALEK ,  BOYD JOHN ,  KISTLER ROD

IPC: B24B21/04 ,  B24B37/32 ,  H01L21/304 ,  B24B37/04

Abstract: An apparatus for use in a chemical mechanical planarization (CMP) system is provided. The apparatus includes a platen capable of introducing fluid beneath a polishing pad and a platen support cover configured to surround the platen. The platen is disposed at a first level and the platen support cover is disposed at a second level, the first level being lower relative to the second level. Both the platen and the platen support cover are configured to be disposed below the polishing pad such that the polishing pad is closer to the second level than the first level. The platen support cover has a width at the second level that is substantially equal around the platen. An apparatus and method for controlling pressure beneath a polishing pad is also provided.

公开(公告)号：DE60104903D1

公开(公告)日：2004-09-16

申请号：DE60104903

申请日：2001-12-21

Applicant: LAM RES CORP

Inventor： KISTLER ROD ,  BOYD JOHN ,  OWCZARZ ALEK

IPC: B24B21/10 ,  B24B21/04 ,  B24B37/12 ,  B24B49/10 ,  B24B49/16 ,  B24D9/08 ,  H01L21/304 ,  B24B37/04

Abstract: An invention is disclosed for impoved performance in a CMP process using a pressurized membrane (312) and piezoelectric elements (702) as replacements for a platen (308) air bearing. In one embodiment, a platen form impoving performance in CMP applications is disclosed. The platen includes a membrane disposed above the platen, and a plurality of annular bladders (314) disposed below the membrane, wherein the annular bladders are capable of exerting force on the membrane. In this manner, zonal control is provided during the CMP process. In a further embodiment, piezoeletric elements are disposeed above the platen, which exert force on the polishing belt (310) during a CMP process, resulting in improved zonal control during the CMP process.

公开(公告)号：AU2003299889A1

公开(公告)日：2004-09-06

申请号：AU2003299889

申请日：2003-12-23

Applicant: LAM RES CORP

Inventor： ANDERSON THOMAS W ,  BOYD JOHN ,  KUTHI ANDRAS ,  THIE WILLIAM ,  SMITH MICHAEL G R ,  KNOP ROBERT

IPC: B06B1/02 ,  B08B3/10 ,  B08B3/12 ,  H01L21/00

Abstract: system and method of cleaning a substrate (202) includes a megasonic chamber (206) that includes a transducer (210) and a substrate (202). The transducer (210) is being oriented toward the substrate (202). A variable distance d separates the transducer (210) and the substrate (202). The system (200) also includes a dynamically adjustable RF generator (212) that has an output coupled to the transducer. The dynamically adjustable RF generator (212) can be controlled by a phase comparison of an oscillator output (306) voltage and a phase of an RF generator output voltage. The dynamically adjustable RF generator (212) can also be controlled by monitoring a peak voltage of an output signal and controlling the RF generator to maintain the peak voltage within a predetermined voltage range. The dynamically adjustable RF generator (212) can also be controlled by dynamically controlling a variable DC power supply voltage.

公开(公告)号：AT556431T

公开(公告)日：2012-05-15

申请号：AT07007143

申请日：2003-09-30

Applicant: LAM RES CORP

Inventor： DE LARIOS JOHN M ,  GARCIA JAMES P ,  WOODS CARL ,  RAVKIN MIKE ,  REDEKER FRITZ ,  BOYD JOHN ,  NICKHOU AFSHIN

IPC: H01L21/67 ,  C25D5/22 ,  C25D7/12 ,  H01L21/00

Abstract: A manifold for use in preparing a surface of a substrate, comprising: the manifold defined by a head that includes, a first portion in the manifold having a plurality of conduits to deliver a first fluid onto the surface of the substrate and a plurality of conduits for removing the first fluid from the surface of the substrate to define a first process window in the first portion of the manifold, a first fluid meniscus configured to be maintained in the first process window of the manifold; and a second portion in the manifold having a plurality of conduits to deliver a second fluid onto the surface of the substrate and a plurality of conduits for removing the second fluid from the surface of the substrate to define a second process window in the second portion of the manifold, a second fluid meniscus configured to be maintained in the second process window of the manifold; wherein the head is operable to be placed in proximity to the surface of the substrate so as to orient the first process window and the second process window toward the surface of the substrate.

公开(公告)号：SG174105A1

公开(公告)日：2011-09-29

申请号：SG2011062148

申请日：2007-08-15

Applicant: LAM RES CORP

Inventor： NALLA PRAVEEN ,  THIE WILLIAM ,  BOYD JOHN ,  ARUNAGIRI TIRUCHIRAPALLI ,  YOON HYUNGSUK ALEXANDER ,  REDEKER FRITZ C ,  DORDI YEZDI

Abstract: OF THE DISCLOSURE[53] The embodiments fill the need enabling deposition of a thin and conformal bather layer, and a copper layer in the copper interconnect with good electro-migration performance and with reduced risk of stress-induce voiding of copper interconnect. Electromigration and stress-induced voiding are affected by the adhesion between the barrier layer and the copper layer. A functionalization layer is deposited over the barrier layer to enable the copper layer being deposit in the copper interconnect. The functionalization layer forms strong bonds with barrier layer and with copper to improve adhesion property between the two layers. An exemplary method of preparing a substrate surface of a substrate to deposit a functionalization layer over a metallic barrier layer of a copper interconnect to assist deposition of a copper layer in the copper interconnect in order to improve electromigration performance of the copper interconnect is provided. The method includes depositing the metallic bather layer to line the copper interconnect structure in the integrated system, and oxidizing a surface of the metallic bather layer. The method also includes depositing the functionalization layer over the oxidized surface of the metallic barrier layer, and depositing the copper layer in the copper interconnect structure after the funcationalization layer is deposited over the metallic bather layer.Figure 5D

公开(公告)号：PL208012B1

公开(公告)日：2011-03-31

申请号：PL37450203

申请日：2003-09-30

Applicant: LAM RES CORP

Inventor： DE LARIOS JOHN M ,  GARCIA JAMES P ,  WOODS CARL ,  RAVKIN MIKE ,  REDEKER FRITZ ,  BOYD JOHN ,  NICKHOU AFSHIN

IPC: H01L21/00

公开(公告)号：MY139592A

公开(公告)日：2009-10-30

申请号：MYPI20042487

申请日：2004-06-24

Applicant: LAM RES CORP

Inventor： HEMKER DAVID ,  REDEKER FRED C ,  BOYD JOHN ,  LARIOS JOHN M DE ,  RAVKIN MICHAEL ,  KOROLIK MIKHAIL

IPC: B08B3/10 ,  G03F7/20

Abstract: A METHOD FOR PROCESSING A SUBSTRATE IS PROVIDED WHICH INCLUDES GENERATING A MENISCUS (112) ON THE SURFACE OF THE SUBSTRATE (108) AND APPLYING PHOTOLITHOGRAPHY LIGHT THROUGH THE MENISCUS (112) TO ENABLE PHOTOLITHOGRAPHY PROCESSING OF A SURFACE OF THE SUBSTRATE (108).

公开(公告)号：SG149018A1

公开(公告)日：2009-01-29

申请号：SG2008092041

申请日：2004-12-07

Applicant: LAM RES CORP

Inventor： DORDI YEZDI ,  BOYD JOHN ,  THIE WILLIAM ,  MARASCHIN BOB ,  REDEKER FRED C ,  COOK JOEL M

IPC: C23C18/16 ,  C23C18/54

Abstract: METHOD AND APPARATUS FOR MATERIAL DEPOSITION A method and an apparatus are provided for selective heating of a surface of a wafer exposed to an electroless plating solution. Selective heating by a radiant energy source causes a temperature increase at an interface between the wafer surface and the electroless plating solution. This temperature increase causes a plating reaction to occur at the wafer surface. Thus, material is deposited on the wafer surface through an electroless plating reaction that is initiated and controlled by varying the temperature of the wafer surface using an appropriately defined radiant energy source. Additionally, a planar member can be positioned over and proximate to the wafer surface to entrap electroless plating solution between the planar member and the wafer surface. Material deposited through the plating reactions forms a planarizing layer that conforms to a planarity of the planar member. Fig 2A

公开(公告)号：AT365375T

公开(公告)日：2007-07-15

申请号：AT03798815

申请日：2003-09-30

Applicant: LAM RES CORP

Inventor： DE LARIOS JOHN ,  GARCIA JAMES ,  WOODS CARL ,  RAVKIN MIKE ,  REDEKER FRITZ ,  BOYD JOHN ,  NICKHOU AFSHIN

IPC: H01L21/00

Abstract: One of many embodiments of a substrate preparation system is provided which includes a head having a head surface where the head surface is proximate to a surface of the substrate. The system also includes a first conduit for delivering a first fluid to the surface of the substrate through the head, and a second conduit for delivering a second fluid to the surface of the substrate through the head, where the second fluid is different than the first fluid. The system also includes a third conduit for removing each of the first fluid and the second fluid from the surface of the substrate where the first conduit, the second conduit and the third conduit act substantially simultaneously. In an alternative embodiment, a method for processing a substrate is provided that includes generating a fluid meniscus on a surface of the substrate and applying acoustic energy to the fluid meniscus. The method also includes moving the fluid meniscus over the surface the substrate to process the surface of the substrate.

公开(公告)号：DE60105061D1

公开(公告)日：2004-09-23

申请号：DE60105061

申请日：2001-12-21

Applicant: LAM RES CORP

Inventor： OWCZARZ ALEK ,  BOYD JOHN ,  KISTLER ROD

IPC: B24B21/04 ,  B24B37/32 ,  H01L21/304 ,  B24B37/04

Abstract: An apparatus for use in a chemical mechanical planarization (CMP) system is provided. The apparatus includes a platen capable of introducing fluid beneath a polishing pad and a platen support cover configured to surround the platen. The platen is disposed at a first level and the platen support cover is disposed at a second level, the first level being lower relative to the second level. Both the platen and the platen support cover are configured to be disposed below the polishing pad such that the polishing pad is closer to the second level than the first level. The platen support cover has a width at the second level that is substantially equal around the platen. An apparatus and method for controlling pressure beneath a polishing pad is also provided.