公开(公告)号：DE10031821A1

公开(公告)日：2002-01-17

申请号：DE10031821

申请日：2000-06-30

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： WIRTH RALPH ,  ZULL HERIBERT ,  LINDER NORBERT

IPC: H01L33/14 ,  H01L33/20 ,  H01L33/38 ,  H01L33/00

Abstract: According to the invention, a textured coupling-out layer (6) with flanks (16) is located on an upper surface. Said flanks are aligned at an angle of between 60 DEG and 88 DEG in relation to the layer plane and form the boundaries of the coupling-out regions that are offset in relation to one another and are provided for emitting the radiation. The portions of the coupling-out layer that are located in the coupling-out regions can take the form of flat truncated cones and their flanks can be fluted or serrated, in order to increase the probability that the generated radiation strikes the external limiting surface of the coupling-out layer at a steeper angle than the critical angle of the total internal reflection.

公开(公告)号：DE50313373D1

公开(公告)日：2011-02-10

申请号：DE50313373

申请日：2003-08-13

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： KARNUTSCH CHRISTIAN ,  LINDER NORBERT ,  LUFT JOHANN ,  LUTGEN STEPHAN ,  SCHMID WOLFGANG

IPC: H01S5/04 ,  H01S5/183 ,  H01S3/109 ,  H01S5/026 ,  H01S5/06 ,  H01S5/10 ,  H01S5/14

公开(公告)号：DE102008061152A1

公开(公告)日：2010-06-10

申请号：DE102008061152

申请日：2008-12-09

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： BAUR ELMAR ,  LINDER NORBERT ,  SUNDGREN PETRUS ,  HOFMANN CLEMENS

IPC: H01S5/20 ,  H01L33/00 ,  H01S5/10

Abstract: The semiconductor chip (1) has a semiconductor layer sequence (2) with an active layer (3) for producing electromagnetic radiations. Mesa trenches (4) limit the layer sequence and the active layer in a lateral direction (L) and reflect the radiations. A pumping path of the radiations is formed in a meander shape and is limited by the mesa trenches in the lateral section. A contact structure is formed at an upper side and/or a lower side of the layer sequences and follows the pumping path, where the contact structure has a width of maximum 75 micrometers.

公开(公告)号：DE10321246B4

公开(公告)日：2009-10-22

申请号：DE10321246

申请日：2003-05-12

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： SCHMID WOLFGANG ,  BRICK PETER ,  ALBRECHT TONY ,  LINDER NORBERT

IPC: H01S5/34 ,  H01S5/026 ,  H01S5/04 ,  H01S5/10 ,  H01S5/14 ,  H01S5/183 ,  H01S5/20 ,  H01S5/30 ,  H01S5/40

Abstract: Semiconductor laser has body (1) with periodical system of recesses (2), or periodical system of semiconductor regions. Radiation, generated by semiconductor laser cannot propagate within periodical system and laser resonator (3) is influenced in lateral direction by periodical system.Optically pumped semiconductor appliance comprises vertical emitter (13), containing quantum dot structure (7) and is pumped by one or more lasers. Preferably resonator has angled or curved axis. Independent claims are included for optically pumped semiconductor appliance.

公开(公告)号：DE102007057708A1

公开(公告)日：2009-04-09

申请号：DE102007057708

申请日：2007-11-30

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： LINDER NORBERT ,  GROENNINGER GUENTHER ,  HEIDBORN PETER ,  STREUBEL KLAUS ,  KUGLER SIEGMAR

IPC: H01L33/06 ,  H01L33/30 ,  H01S5/34

Abstract: The component has a radiation-emitting active layer (1) arranged between barrier layers (2), where the active layer and the barrier layers are made of respective indium-aluminum-gallium-phosphide combinations. The barrier layers include a wide electronic bandgap than the active layer. The barrier layers and the active layer include respective grating constants, which are smaller around 0.2 percentages or 1 percentage than the grating constants of gallium arsenide. Parameters of the active layer are selected such that the active layer includes a direct bandgap.

公开(公告)号：DE102007029391A1

公开(公告)日：2009-01-02

申请号：DE102007029391

申请日：2007-06-26

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： GROETSCH STEFAN ,  LINDER NORBERT

IPC: H01L33/40 ,  H01L33/46

公开(公告)号：DE10223540B4

公开(公告)日：2006-12-21

申请号：DE10223540

申请日：2002-05-27

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： ALBRECHT TONY ,  LINDER NORBERT ,  SCHMID WOLFGANG

IPC: H01S5/40 ,  H01S3/0941 ,  H01S5/026 ,  H01S5/04 ,  H01S5/10 ,  H01S5/183 ,  H01S5/34

公开(公告)号：DE10361659A1

公开(公告)日：2005-07-28

申请号：DE10361659

申请日：2003-12-30

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： BEHRES ALEXANDER ,  LINDER NORBERT ,  MAYER BERND

IPC: H01L21/20 ,  H01S5/343 ,  H01L31/109 ,  H01L31/18 ,  H01L33/00

Abstract: Process for preparation of an epitaxial structural element based on a first group III/V compound semiconductor material system (SMS) with a first group V element on a substrate or buffer layer, which includes a material based on a second group III/V element SMS with a second group V element different from the first one, where prior to application of the epitaxial layer sequence, a layer sequence with different first and second group III/V compound SMS is applied.

公开(公告)号：DE10355962A1

公开(公告)日：2005-04-28

申请号：DE10355962

申请日：2003-12-01

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： LINDER NORBERT ,  PIETZONKA INES

IPC: H01L33/02 ,  H01L33/26 ,  H01L33/30 ,  H01L33/00

公开(公告)号：DE10306311A1

公开(公告)日：2004-03-11

申请号：DE10306311

申请日：2003-02-14

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： LINDER NORBERT ,  STREUBEL KLAUS ,  STAUSS PETER ,  HAMPEL MARK

IPC: H01L33/04 ,  H01L33/30 ,  H01L33/00

Abstract: Radiation-emitting semiconductor component comprises an n-doped casing layer (18), a p-doped casing layer (20), an active layer (14) based on InGaAlP arranged between the casing layers, and a diffusion stop layer (16) having a tensioned superlattice arranged between the active layer and the p-doped casing layer.