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    MULTILAYER MIRROR AND LITHOGRAPHIC APPARATUS
    31.
    发明申请
    MULTILAYER MIRROR AND LITHOGRAPHIC APPARATUS 审中-公开
    多层镜像和平面设备

    公开(公告)号：WO2010091907A1

    公开(公告)日：2010-08-19

    申请号：PCT/EP2010/050195

    申请日：2010-01-11

    Applicant: ASML NETHERLANDS B.V. ,  GLUSHKOV, Denis ,  BANINE, Vadim ,  SJMAENOK, Leonid ,  SALASCHENKO, Nikolai ,  CHKHALO, Nikolay

    Inventor： GLUSHKOV, Denis ,  BANINE, Vadim ,  SJMAENOK, Leonid ,  SALASCHENKO, Nikolai ,  CHKHALO, Nikolay

    IPC: G21K1/06 ,  G03F7/00

    CPC classification number: G21K1/062 ,  B82Y10/00 ,  B82Y40/00 ,  G02B5/0816 ,  G02B5/085 ,  G02B5/0891 ,  G03F1/24 ,  G03F7/70316 ,  G03F7/70941 ,  G03F7/70958

    Abstract: A multilayer mirror (7) is constructed and arranged to reflect radiation having a wavelength in the range of 2-8 nm. The multilayer mirror has alternating layers (4, 6), the alternating layers comprising a first layer and a second layer, the first and second layers being selected from the group consisting of : U and B4C layers, Th and B4C layers, La and B9C layers, La and B4C layers, U and B9C layers, Th and B9C layers, La and B layers, U and B layers, C and B layers, Th and B layers, U compound and B4C layers, Th compound and B4C layers, La compound and B9C layers, La compound and B4C layers, U compound and a B9C layers, Th compound and a B9C layers, La compound and a B layers, U compound and B layers, and Th compound and a B layers, wherein at least one of the first layers is separated from the second layer by an interlayer (7) disposed between at least one of the first layers and the second layer.

    Abstract translation: 多层反射镜（7）被构造和布置成反射波长在2-8nm范围内的辐射。 所述多层反射镜具有交替层（4,6），所述交替层包括第一层和第二层，所述第一层和第二层选自：U和B4C层，Th和B4C层，La和B9C 层，La和B4C层，U和B9C层，Th和B9C层，La和B层，U和B层，C和B层，Th和B层，U化合物和B4C层，Th化合物和B4C层，La 化合物和B9C层，La化合物和B4C层，U化合物和B9C层，Th化合物和B9C层，La化合物和B层，U化合物和B层，以及Th化合物和B层，其中至少一个 的第一层通过设置在第一层和第二层中的至少一个之间的中间层（7）与第二层分离。

    RADIATION SYSTEM, RADIATION COLLECTOR, RADIATION BEAM CONDITIONING SYSTEM, SPECTRAL PURITY FILTER FOR A RADIATION SYSTEM AND METHOD OF FORMING A SPECTRAL PURITY FILTER
    32.
    发明申请
    RADIATION SYSTEM, RADIATION COLLECTOR, RADIATION BEAM CONDITIONING SYSTEM, SPECTRAL PURITY FILTER FOR A RADIATION SYSTEM AND METHOD OF FORMING A SPECTRAL PURITY FILTER 审中-公开
    辐射系统，辐射收集器，辐射束调节系统，辐射系统的光谱滤光器和形成光谱滤光片的方法

    公开(公告)号：WO2009144117A1

    公开(公告)日：2009-12-03

    申请号：PCT/EP2009/055380

    申请日：2009-05-05

    Applicant: ASML Netherlands B.V. ,  BANINE, Vadim ,  DE BOEIJ, Wilhelmus ,  LOOPSTRA, Johannes ,  VAN DIJSSELDONK, Antonius ,  SWINKELS, Gerardus ,  VAN SCHOOT, Jan

    Inventor： BANINE, Vadim ,  DE BOEIJ, Wilhelmus ,  LOOPSTRA, Johannes ,  VAN DIJSSELDONK, Antonius ,  SWINKELS, Gerardus ,  VAN SCHOOT, Jan

    IPC: G02B5/08 ,  G02B5/18 ,  G02B5/20 ,  G02B5/28 ,  G03F7/20

    CPC classification number: G03F7/70191 ,  G03F7/70116 ,  G03F7/70575

    Abstract: A radiation system is configured tp generate a radiation beam. The radiation system comprising a chamber that includes a radiation source configured to generate radiation, a radiation beam emission aperture, and a radiation collector configured to collect radiation generated by the source, and to transmit the collected radiation to the radiation beam emission aperture. The radiation collector includes a spectral purity filter configured to enhance a spectral purity of the radiation to be emitted via the aperture. The spectral purity filter comprising: a base substrate; a multilayer stack on the base substrate, the multilayer stack comprising a plurality of alternating layers; and a plurality of recesses in a top side of the multilayer stack, the recesses being configured to allow the radiation having the first wavelength to be reflected in the first direction and to reflect the radiation having the second wavelength in the second direction; wherein the recesses are configured such that, in cross-section, they have a symmetric profile.

    Abstract translation: 辐射系统被配置成tp产生辐射束。 所述辐射系统包括腔室，所述室包括被配置为产生辐射的辐射源，辐射束发射孔和被配置为收集由所述源产生的辐射的辐射收集器，并且将所收集的辐射传输到所述辐射束发射孔。 辐射收集器包括光谱纯度滤光器，其配置成增强经由孔径发射的辐射的光谱纯度。 光谱纯度滤光片，包括：基底; 在所述基底基底上的多层叠层，所述多层叠层包括多个交替层; 以及在所述多层堆叠的顶侧中的多个凹部，所述凹部被配置为允许具有所述第一波长的辐射在所述第一方向上被反射并且在所述第二方向上反射具有所述第二波长的辐射; 其中所述凹部被构造成使得在横截面中它们具有对称轮廓。

    PELLICLE, RETICLE ASSEMBLY AND LITHOGRAPHIC APPARATUS
    34.
    发明申请
    PELLICLE, RETICLE ASSEMBLY AND LITHOGRAPHIC APPARATUS 审中-公开
    透明胶片和胶片装置

    公开(公告)号：WO2013152921A1

    公开(公告)日：2013-10-17

    申请号：PCT/EP2013/055518

    申请日：2013-03-18

    Applicant: ASML NETHERLANDS B.V.

    Inventor： YAKUNIN, Andrei ,  BANINE, Vadim ,  SJMAENOK, Leonid ,  SALASHCHENKO, Nikolay ,  SCACCABAROZZI, Luigi ,  LOPATIN, Aleksei

    IPC: G03F1/00 ,  G03F1/62 ,  G03F7/20

    CPC classification number: G03F7/70983 ,  G03F1/62

    Abstract: Pellicles or films are disclosed that are suitable for use as protective covers for EUV device lithography reticles (patterning structures). The pellicles pass radiation of wavelength 5nm to 20nm whilst acting as a barrier to particulate deposits on reticles, which would otherwise lead to defects in devices patterned using the reticles. Also disclosed are reticle assemblies and lithographic apparatus including such pellicles, as well as methods for forming the pellicles. The pellicles may have a multilayer configuration, with the central region having two or more layers of silicon alternating with layers of the refractory material. Silicon oxide or nitride may be used as an interfacial layer for adhesion/anti-diffusion between the silicon and the refractory material. The pellicles are capable of self-support when tensioned over a reticle, without need of a support grid, even when sufficiently thin to permit high EUV transmissivity.

    Abstract translation: 公开了适合用作EUV器件光刻掩模版（图案结构）的保护罩的薄膜或薄膜。 薄膜将波长5nm至20nm的辐射通过，同时作为掩模上的颗粒沉积物的屏障，否则会导致使用掩模版图案化的器件的缺陷。 还公开了标线组件和包括这种防护薄膜的光刻设备，以及形成防护薄膜的方法。 防护薄膜可以具有多层构造，其中心区域具有两层或多层与耐火材料层交替的硅层。 氧化硅或氮化物可以用作硅和耐火材料之间的粘合/防扩散的界面层。 即使在足够薄以允许高的EUV透射率的情况下，防护薄膜组件也可以在张紧在掩模版上时自支撑，而不需要支撑网格。

    APPARATUS FOR MONITORING A LITHOGRAPHIC PATTERNING DEVICE
    36.
    发明申请
    APPARATUS FOR MONITORING A LITHOGRAPHIC PATTERNING DEVICE 审中-公开
    用于监测地平面图案设备的装置

    公开(公告)号：WO2013037607A1

    公开(公告)日：2013-03-21

    申请号：PCT/EP2012/066223

    申请日：2012-08-21

    Applicant: ASML NETHERLANDS B.V. ,  SCACCABAROZZI, Luigi ,  BANINE, Vadim ,  LUTTIKHUIS, Bernardus ,  KOOLE, Roelof ,  WONDERGEM, Hendrikus ,  GRAAT, Petrus

    Inventor： SCACCABAROZZI, Luigi ,  BANINE, Vadim ,  LUTTIKHUIS, Bernardus ,  KOOLE, Roelof ,  WONDERGEM, Hendrikus ,  GRAAT, Petrus

    IPC: G01B11/30 ,  G03F1/84 ,  G03F7/20

    CPC classification number: G03F7/70783 ,  G01B11/16 ,  G03F1/84 ,  G03F7/70141 ,  G03F7/7085 ,  G03F7/70916

    Abstract: A lithographic patterning device deformation monitoring apparatus (38) comprising a radiation source (40), an imaging device (42), and a processor (50). The radiation source being configured to direct a plurality of beams of radiation (41) with a predetermined diameter towards a lithographic patterning device (MA) such that they are reflected by the patterning device. The imaging detector configured to detect spatial positions of the radiation beams (41') after they have been reflected by the patterning device. The processor configured to monitor the spatial positions of the radiation beams and thereby determine the presence of a patterning device deformation. The imaging detector has an collection angle which is smaller than a minimum angle of diffraction of the radiation beams.

    Abstract translation: 一种包括辐射源（40），成像装置（42）和处理器（50）的平版印刷图案形成装置变形监测装置（38）。 辐射源被配置为将多个具有预定直径的辐射光束引向平版印刷图案形成装置（MA），使得它们被图案形成装置反射。 该成像检测器被配置为在被图案形成装置反射之后检测辐射束（41'）的空间位置。 处理器被配置为监视辐射束的空间位置，从而确定图案形成装置变形的存在。 成像检测器的收集角度小于辐射束的最小衍射角。

    METHODS AND APPARATUS FOR INSPECTION OF ARTICLES, EUV LITHOGRAPHY RETICLES, LITHOGRAPHY APPARATUS AND METHOD OF MANUFACTURING DEVICES
    39.
    发明申请
    METHODS AND APPARATUS FOR INSPECTION OF ARTICLES, EUV LITHOGRAPHY RETICLES, LITHOGRAPHY APPARATUS AND METHOD OF MANUFACTURING DEVICES 审中-公开
    用于检查文章的方法和装置，EUV平版印刷版，平版印刷装置和制造装置的方法

    公开(公告)号：WO2012076216A1

    公开(公告)日：2012-06-14

    申请号：PCT/EP2011/067491

    申请日：2011-10-06

    Applicant: ASML NETHERLANDS B.V. ,  VAINER, Yuri ,  BANINE, Vadim ,  DEN BOEF, Arie ,  SCACCABAROZZI, Luigi

    Inventor： VAINER, Yuri ,  BANINE, Vadim ,  DEN BOEF, Arie ,  SCACCABAROZZI, Luigi

    IPC: G01N21/94 ,  G01N21/956 ,  G03F7/20 ,  H01L21/66

    CPC classification number: G03F7/7085 ,  G01N21/94 ,  G01N21/956 ,  G01N21/95623 ,  G01N2021/95676 ,  G03F1/24 ,  G03F1/84 ,  G03F7/70916

    Abstract: An article such as an EUV (extreme ultraviolet) lithography reticle is inspected to detect contaminant particles. The inspection apparatus (900) comprises illumination optics (602) with primary radiation (λρ). An imaging optical system with plural branches is arranged to form and detect a plurality of images, each branch having an image sensor (610,910) and forming its image with a different portion of radiation received from the illuminated article. A processor (PU) combines information from the detected images to report on the presence and location of contaminant particles. In one or more branches the primary radiation is filtered out(612), so that the detected image is formed using only secondary radiation emitted by contaminant material in response to the primary radiation. In a dark field imaging branch using the scattered primary radiation, a spatial filter (918) blocks spatial frequency components associated with periodic features of the article under inspection, to allow detection of particles which cannot be detected by secondary radiation.

    Abstract translation: 检查诸如EUV（极紫外）光刻掩模版的物品以检测污染物颗粒。 检查装置（900）包括具有初级辐射（θ）的照明光学器件（602）。 布置具有多个分支的成像光学系统以形成和检测多个图像，每个分支具有图像传感器（610,910），并且用从照明物品接收到的辐射的不同部分形成其图像。 处理器（PU）组合来自检测到的图像的信息以报告污染物颗粒的存在和位置。 在一个或多个分支中，主辐射被滤出（612），使得仅使用由主要辐射响应的污染物质发射的二次辐射形成检测到的图像。 在使用散射的初级辐射的暗场成像分支中，空间滤波器（918）阻挡与被检查物品的周期特征相关联的空间频率分量，以允许检测不能被二次辐射检测的粒子。

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