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    ELECTROSTATIC CHUCK WAFER PORT AND TOP PLATE WITH EDGE SHIELDING AND GAS SCAVENGING
    41.
    发明申请
    ELECTROSTATIC CHUCK WAFER PORT AND TOP PLATE WITH EDGE SHIELDING AND GAS SCAVENGING 审中-公开
    具有边缘屏蔽和气体清除的静电夹芯晶片端口和顶板

    公开(公告)号：WO2004038766A3

    公开(公告)日：2004-07-22

    申请号：PCT/IB0304652

    申请日：2003-10-22

    Applicant: AXCELIS TECH INC

    Inventor： KELLERMAN PETER L ,  RYAN KEVIN T ,  MITCHELL ROBERT J

    IPC: H01L21/00

    CPC classification number: H01L21/67109

    Abstract: An apparatus for processing a semiconductor wafer. The apparatus according to the present invention comprises a wafer port flange including an electrostatic chuck and a top plate including a lip. The electrostatic chuck defines a circumferential gas distribution groove and a gas gap positioned between a backside of a semiconductor wafer and the electrostatic chuck. The lip is positioned to shield an outside band of the wafer. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

    Abstract translation: 一种用于处理半导体晶片的设备。 根据本发明的设备包括包括静电卡盘的晶片端口法兰和包括唇缘的顶板。 静电卡盘限定周向气体分布凹槽和位于半导体晶片的背侧和静电卡盘之间的气隙。 唇部被定位以屏蔽晶片的外部带。 要强调的是，提供这个摘要是为了遵守需要摘要的规则，这将允许搜索者或其他读者快速确定技术公开的主题。 提交时的理解是，它不会被用来解释或限制权利要求的范围或含义。

    OPTICAL PATH IMPROVEMENT, FOCUS LENGTH CHANGE COMPENSATION, AND STRAY LIGHT REDUCTION FOR TEMPERATURE MEASUREMENT SYSTEM OF RTP TOOL
    42.
    发明申请
    OPTICAL PATH IMPROVEMENT, FOCUS LENGTH CHANGE COMPENSATION, AND STRAY LIGHT REDUCTION FOR TEMPERATURE MEASUREMENT SYSTEM OF RTP TOOL 审中-公开
    RTP工具温度测量系统的光学路径改进，聚焦长度变化补偿和轻量化减轻

    公开(公告)号：WO2004019386A3

    公开(公告)日：2004-06-17

    申请号：PCT/US0326278

    申请日：2003-08-21

    Applicant: AXCELIS TECH INC

    Inventor： BROWN DOUGLAS ,  MEADOWS ROBERT DAVID ,  TAO DAVID ,  KOCH MATHIAS

    IPC: G01J5/00 ,  G01J5/02 ,  G01J5/06 ,  G01J5/08 ,  H01L21/00 ,  H01L21/66

    CPC classification number: G01J5/08 ,  G01J5/0003 ,  G01J5/0007 ,  G01J5/02 ,  G01J5/0255 ,  G01J5/04 ,  G01J5/045 ,  G01J5/046 ,  G01J5/061 ,  G01J5/0806 ,  G01J5/084 ,  G01J5/0846 ,  G01J5/0875 ,  G01J5/0893 ,  H01L21/67248

    Abstract: The present invention is directed to a pyrometer system and comprises an elevator tube. The elevator tube comprises an inner tube and an outer tube surrounding the inner tube in telescoping arrangement and extending from a top to a bottom thereof, the arrangement defining a fluid passageway therebetween. The elevator tube further comprises a port associated with the outer tube that is operable to transmit a cooling gas therethrough into the fluid passageway. A pyrometer head is coupled to the bottom of the inner tube and is operable to transmit and receive radiation through the inner tube. The system further comprises a spider collar coupled to at least one of a top of the inner tube or outer tube, and is operable to support a work piece for thermal measurement thereof. In another embodiment, a sleeve having a coefficient of thermal expansion is provided at the top portion of the elevator tube, so that temperature dependent changes in the focal length of a lens associated with the sleeve are compensated.

    Abstract translation: 本发明涉及一种高温计系统，包括电梯管。 电梯管包括内管和外管，其围绕内管以伸缩布置并从其顶部延伸到底部，该布置在其间限定了流体通道。 电梯管还包括与外管相关联的端口，其可操作以将冷却气体通过其传送到流体通道中。 高温计头部连接到内管的底部并且可操作以通过内管传送和接收辐射。 所述系统还包括联接到所述内管或外管的顶部中的至少一个的蜘蛛环，并且可操作以支撑用于其热测量的工件。 在另一个实施例中，具有热膨胀系数的套筒设置在电梯管的顶部，从而补偿与套筒相关联的镜片的焦距随温度的变化。

    WAFER PEDESTAL TILT MECHANISM AND COOLING SYSTEM
    43.
    发明申请
    WAFER PEDESTAL TILT MECHANISM AND COOLING SYSTEM 审中-公开
    WAFER PEDESTAL倾斜机械和冷却系统

    公开(公告)号：WO03036679A2

    公开(公告)日：2003-05-01

    申请号：PCT/US0234382

    申请日：2002-10-25

    Applicant: AXCELIS TECH INC

    Inventor： WEED ALAN ,  FISH ROGER

    IPC: H01J37/20 ,  H01J37/317 ,  H01L21/00 ,  H01L21/265

    CPC classification number: H01L21/67109 ,  H01J37/3171 ,  H01J2237/2001 ,  H01J2237/20207 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: The invention provides a wafer pad assembly for use in an ion implanter for mounting and cooling a wafer. The wafer pad assembly comprises a wafer support pad having an upper surface for mounting the wafer and a lower surface. The lower surface of the wafer support pad is connected to a coolant passage having an inlet section and an outlet section arranged in an opposed configuration, wherein said inlet section is counterbalanced by said outlet section. The lower surface is connected to a frame having an outer curved surface in mating engagement with a complementatry shaped bearing surface of a housing wherein said wafer can be tilited or rotated about an axis.

    Abstract translation: 本发明提供了一种用于离子注入机的晶片焊盘组件，用于安装和冷却晶片。 晶片垫组件包括具有用于安装晶片的上表面和下表面的晶片支撑垫。 晶片支撑垫的下表面连接到具有以相对构造布置的入口部分和出口部分的冷却剂通道，其中所述入口部分由所述出口部分平衡。 下表面连接到具有与壳体的互补形状支承表面配合接合的外弯曲表面的框架，其中所述晶片可以围绕轴线倾斜或旋转。

    PLASMA SOURCE HAVING SUPPLEMENTAL ENERGIZER FOR ION ENHANCEMENT
    44.
    发明申请
    PLASMA SOURCE HAVING SUPPLEMENTAL ENERGIZER FOR ION ENHANCEMENT 审中-公开
    具有补充能源的等离子体源用于离子增强

    公开(公告)号：WO02082491A3

    公开(公告)日：2002-12-05

    申请号：PCT/US0210335

    申请日：2002-04-04

    Applicant: AXCELIS TECH INC

    Inventor： SRIVASTAVA ASEEM ,  RICHARDSON DANIEL

    IPC: H01J37/32

    CPC classification number: H01J37/32192 ,  H01J37/321

    Abstract: A supplemental ion source (74) for a plasma processing system (10) having a plasma processing chamber (16) is provided. The ion source (74) comprises: a signal generator (82, 96) for generating an output signal; and an antenna assembly (76, 90) located proximate the process chamber (16), whereby energization of the antenna assembly by the signal generator ionizes plasma confined within the processing chamber (16) to create plasma having a substantial ionized content. The antenna assembly (76, 90) is generally planar in shape and may take the form of a plate or coil antenna. The signal generator preferably generates an output signal in the radio frequency (RF) range. The supplemental energizer operates independently of the first plasma source such that either, or both, may be switched on or off at any time.

    Abstract translation: 提供了一种用于具有等离子体处理室（16）的等离子体处理系统（10）的补充离子源（74）。 离子源（74）包括：用于产生输出信号的信号发生器（82,96）; 以及位于处理室（16）附近的天线组件（76,90），由此由信号发生器对天线组件的通电电离了处理室（16）内限制的等离子体，以产生具有基本电离含量的等离子体。 天线组件（76,90）的形状大体上是平面的并且可以采取板或线圈天线的形式。 信号发生器优选地在射频（RF）范围内产生输出信号。 辅助增能器独立于第一等离子体源操作，使得任一个或两者可以在任何时间被打开或关闭。

    AN APPARATUS FOR THE BACKSIDE GAS COOLING OF A WAFER IN A BATCH ION IMPLANTATION SYSTEM
    46.
    发明申请
    AN APPARATUS FOR THE BACKSIDE GAS COOLING OF A WAFER IN A BATCH ION IMPLANTATION SYSTEM 审中-公开
    用于在离子植入系统中的散热器的背面气体冷却的装置

    公开(公告)号：WO0227754A3

    公开(公告)日：2002-06-13

    申请号：PCT/GB0103795

    申请日：2001-08-23

    Applicant: AXCELIS TECH INC ,  EATON LTD

    Inventor： CHIPMAN DAVID JAMES ,  LAGOS BRYAN CHRISTOPHER ,  MITCHELL ROBERT JOHN ,  ROSEN GARY JAY ,  STONE DALE KEITH

    IPC: H01J37/02 ,  H01J37/317

    CPC classification number: H01J37/20 ,  H01J37/3171 ,  H01J2237/2001

    Abstract: The invention provides apparatus by which a cooling gas (302) is supplied from a stationary source to the back side of batch ion implanter workpieces being implanted in a rotating or spinning batch implanter process disk (282, 380). The cooling gas (302) provides improved heat transfer from the workpieces to the process disk (282, 380), which may be advantageously combined with circulation of cooling fluid through passages in the process disk to remove heat therefrom. The invention further includes a rotary feedthrough (300) employed to transfer the cooling gas (302) from a stationary housing (210) to a gas chamber in a rotating shaft (270) which spins the batch implanter process disk (282, 380). In addition a seal apparatus is provided which seals the cooling gas (302) applied to the back sides of the workpieces from the vacuum in which the front sides of the workpieces are implanted.

    Abstract translation: 本发明提供了一种装置，通过该装置将冷却气体（302）从固定源供应到植入在旋转或旋转批量注入机处理盘（282,380）中的批量离子注入机工件的背面。 冷却气体（302）提供从工件到处理盘（282,380）的改进的热传递，其可以有利地与通过处理盘中的通道的冷却流体循环组合以从其中除去热量。 本发明还包括用于将冷却气体（302）从固定壳体（210）转移到旋转轴（270）中的旋转轴（270）中的旋转馈通（300），旋转轴（270）旋转批量注入器处理盘（282,380）。 此外，设置密封装置，其从被植入工件的前侧的真空密封施加到工件的背面的冷却气体（302）。

    PLASMA MEDIATED ASHING PROCESSES
    49.
    发明专利
    PLASMA MEDIATED ASHING PROCESSES 未知

    公开(公告)号：SG187227A1

    公开(公告)日：2013-02-28

    申请号：SG2013006655

    申请日：2011-07-27

    Applicant: AXCELIS TECH INC

    Inventor： BERRY IVAN ,  LUO SHIJIAN ,  WALDFRIED CARLO ,  ESCORCIA ORLANDO

    Abstract: A plasma ashing process for removing photoresist, polymers and/or residues from a substrate comprises placing the substrate including the photoresist, polymers, and/or residues into a reaction chamber; generating a plasma from a gas mixture comprising oxygen gas (O2) and/or an oxygen containing gas; suppressing and/or reducing fast diffusing species in the plasma; and exposing the substrate to the plasma to selectively remove the photoresist, polymers, and/or residues from the substrate, wherein the plasma is substantially free from fast diffusing species.

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