-
公开(公告)号：KR101124049B1
公开(公告)日：2012-03-26
申请号：KR1020077025994
申请日：2006-06-16
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/304
CPC classification number: H01L21/02057 , H01L21/67028 , H01L21/67034 , H01L21/67051 , H01L21/67057
Abstract: 본 발명은 반도체 웨이퍼 등의 기판을 세정, 건조시키기 위한 기판 처리 장치는 저류된 순수에 기판을 침지시켜 처리하는 액 처리부와, 액 처리부의 위쪽에 마련되어 기판을 건조시키는 건조 처리부와, 액 처리부와 건조 처리부 사이에서 기판을 반송하는 기판 반송 장치와, 순수의 수증기 또는 미스트와 휘발성 유기 용제의 증기 또는 미스트로 이루어진 혼합 유체를 상기 건조 처리부에 공급하는 유체 공급 기구와, 혼합 유체의 공급을 제어하는 제어부를 포함한다.
Abstract translation: 本发明是用于清洁和干燥基板的基板处理装置，例如一个半导体晶片，并通过浸渍在存储净的基板进行处理的液处理单元，干燥部，其得出的液体处理部的顶部干燥所述基材，所述液体处理和干燥 和处理部分之间的基板传送的基板传送装置，其中包括水蒸汽或雾和蒸气或纯流体供应的挥发性有机溶剂的雾的混合流体被供给到干燥部的装置和用于控制流体混合物的供给的控制部 它包括。
-
公开(公告)号：KR1020110038000A
公开(公告)日：2011-04-13
申请号：KR1020110020020
申请日：2011-03-07
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/302
CPC classification number: H01L21/67057 , B08B3/048 , B08B3/12
Abstract: PURPOSE: A method and device for cleaning a substrate, and a program recording medium are provided to remove particles from the surface of a substrate by generating an ultrasonic wave in the cleaning solutions and immersing the substrate in the cleaning solutions. CONSTITUTION: A cleaning bath(12) stores cleaning solutions and receives a substrate which is erected. An ultrasonic generator(30) generates an ultrasonic wave in the cleaning solutions of the cleaning bath. A cleaning solution supply device(40) supplies the cleaning solutions to the cleaning bath. The cleaning solution supply device supplies the cleaning solutions from the lower side of the cleaning bath and the cleaning solutions are discharged through the upper opening of the cleaning bath.
Abstract translation: 目的：提供一种用于清洗基板的方法和装置，以及程序记录介质，用于通过在清洁溶液中产生超声波并将基板浸入清洁溶液中以从基板表面去除颗粒。 构成：清洁浴（12）存储清洁溶液并接收竖立的基底。 超声波发生器（30）在清洗槽的清洗液中产生超声波。 清洁溶液供应装置（40）将清洁溶液供应到清洗浴。 清洗液供给装置从清洗槽的下侧供给清洗液，清洗液通过清洗槽的上部开口排出。
-
公开(公告)号：KR100845453B1
公开(公告)日：2008-07-10
申请号：KR1020077014854
申请日：2005-11-29
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/306
CPC classification number: H01L21/28123 , H01L21/31111 , H01L21/31144 , H01L21/32139 , Y10S438/931
Abstract: 본 발명은, 반도체 기판과, 상기 반도체 기판 상에 형성된 고유전체막과, 상기 고유전체막보다 상층에 형성된 반사 방지 기능과 하드 마스크 기능을 갖는 SiC 계 막을 갖는 적층체로부터 반도체 장치를 제조하는 방법이다. 본 발명은, 상기 SiC 계 막 및 상기 고유전체막에 플라즈마를 작용시켜 개질하는 플라즈마 처리 공정과, 상기 플라즈마 처리 공정에서 개질된 상기 SiC 계 막 및 상기 고유전체막을 습식 세정에 의해 일괄하여 제거하는 세정 처리 공정을 구비한다.
SiC 계 막, 고유전체막, 폴리실리콘막, 습식 세정Abstract translation: 本发明是具有半导体基板和介电膜和形成在半导体基板上的半导体器件从层叠体的制造方法，具有防反射功能和形成为比所述高电介质膜的上层上的硬掩模函数基于SiC的薄膜 。 本发明中，所述SiC基片和由等离子体的高电介质膜的作用变形例的等离子体处理工序的清洗方法，其中所述等离子体处理在整个SiC系膜和所述高电介质改性膜工艺以通过湿清洗除去一次性 治疗过程。
-
公开(公告)号：KR1020070122192A
公开(公告)日：2007-12-28
申请号：KR1020070128864
申请日：2007-12-12
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/304
CPC classification number: H01L21/6708 , Y10S134/902
Abstract: A substrate processing apparatus is provided to improve processing efficiency by preventing formation of dewdrops of solvent steam which produces origins of particles in the closed processing container and unevenness in cleaning. A processing container(10) accommodates a substrate therein, and a processing-gas supplying unit supplies a processing gas into the processing container. A solvent-vapor generator(33) generates a solvent vapor to be supplied into the processing container. A solvent-vapor nozzle(30) is arranged in the processing container and is connected to the solvent-vapor generator. The solvent-vapor nozzle has a nozzle body having plural nozzle orifices formed at appropriate intervals and a condensation-proof mechanism for preventing dewdrops from being formed in an inside space of the nozzle body.
Abstract translation: 提供了一种基板处理装置，以通过防止在封闭的处理容器中产生颗粒起源的溶剂蒸汽的露水形成和清洁不均匀来提高处理效率。 处理容器（10）容纳基板，处理气体供给单元向处理容器供给处理气体。 溶剂蒸汽发生器（33）产生要供应到处理容器中的溶剂蒸气。 溶剂蒸汽喷嘴（30）布置在处理容器中并连接到溶剂蒸汽发生器。 溶剂蒸汽喷嘴具有喷嘴主体，该喷嘴主体具有以适当间隔形成的多个喷嘴孔，以及用于防止在喷嘴体的内部空间中形成露珠的防冷凝机构。
-
公开(公告)号：KR1020070111973A
公开(公告)日：2007-11-22
申请号：KR1020070039728
申请日：2007-04-24
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/302 , H01L21/304
CPC classification number: H01L21/67057 , H01L21/67051
Abstract: A substrate cleaning method, a substrate cleaning apparatus and a program storage medium are provided to remove particles adhering to a substrate to be cleaned by immersing the substrate in a cleaning liquid and generating ultrasonic waves in the cleaning liquid. A substrate is immersed in a cleaning liquid in a cleaning tank(12). Ultrasonic waves are applied to the cleaning liquid contained in the cleaning tank while the cleaning liquid is being supplied into the cleaning tank, wherein a region in the cleaning tank toward which the cleaning liquid is supplied is varied with respect to a vertical level in the step of applying ultrasonic waves in the cleaning liquid while the cleaning liquid is being supplied into the cleaning tank.
Abstract translation: 提供基板清洗方法，基板清洁装置和程序存储介质，以通过将基板浸入清洗液中并在清洗液中产生超声波来去除附着在待清洁基板上的颗粒。 将基板浸入清洗槽（12）中的清洗液中。 当清洁液被供给到清洗槽中时，将超声波施加到清洗槽中所含的清洗液体，其中，清洗槽中供应清洗液体的区域相对于步骤 当清洗液被供给到清洗槽中时，在清洗液中施加超声波。
-
Patent Agency Ranking
公开(公告)号：KR1020070086783A
公开(公告)日：2007-08-27
申请号：KR1020077014854
申请日：2005-11-29
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/306
CPC classification number: H01L21/28123 , H01L21/31111 , H01L21/31144 , H01L21/32139 , Y10S438/931
Abstract: A method for manufacturing a semiconductor device from a laminate having a semiconductor substrate, a high dielectric film formed on the above semiconductor substrate and, formed above the high dielectric film, a SiC based film having a reflection-preventive function and a hardmask function, wherein it comprises a plasma treatment step of applying a plasma to the above SiC based film and the above high dielectric film, for modification, and a cleaning treatment step of removing both of the above SiC based film and the above high dielectric film modified by wet washing.
Abstract translation: 一种由具有半导体衬底的叠层制造半导体器件的方法，在上述半导体衬底上形成的高电介质膜，并且在高电介质膜上形成具有防反射功能和硬掩模功能的SiC基膜， 其包括对上述SiC基膜和上述高介电膜施加等离子体进行改性的等离子体处理步骤，以及去除上述SiC基膜和通过湿洗改性的上述高介电膜的清洗处理步骤 。
-
公开(公告)号：KR1020060030119A
公开(公告)日：2006-04-07
申请号：KR1020067001393
申请日：2005-03-25
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/304
CPC classification number: H01L21/67034 , H01L21/67028 , H01L21/67757 , Y10S134/902
Abstract: Substrate processing equipment (1) is provided with a treatment tank (3) for treating a substrate with a treatment liquid, a dry process part (6) arranged at an upper part of the treatment tank (3), and a transfer mechanism (8) for transferring the substrate (W) between the treatment tank (3) and the dry process part (6). A process gas supplying line (21) for supplying a process gas and inert gas supplying lines (24, 25) for supplying the dry process part (6) with an inert gas are connected to the dry process part (6). A first exhaust line (26) for exhausting an atmosphere pushed out from the dry process part (6) and a second exhaust line (27) for forcibly exhausting the dry process part (6) are connected to the dry process part (6).
Abstract translation: 基板处理设备（1）设置有用处理液处理基板的处理槽（3），设置在处理槽（3）的上部的干法处理部（6）和传送机构（8） ），用于将处理槽（3）和干法处理部（6）之间的基板（W）传送。 用于供给处理气体的工艺气体供给管线（21）和用于向干法处理部件（6）供给惰性气体的惰性气体供给管线（24,25）连接到干法部件（6）。 用于排出从干燥处理部分（6）推出的气氛的第一排气管线（26）和用于强制排出干燥处理部分（6）的第二排出管线（27）连接到干燥处理部分（6）。
-
公开(公告)号：KR100483313B1
公开(公告)日：2005-08-01
申请号：KR1019980038363
申请日：1998-09-17
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/302
Abstract: 본 발명은 예를 들어 반도체웨이퍼나 LCD용유리기판 등의 피처리체를 세정 또는 건조하는 처리장치에 관한 것이다.
본 발명의 처리장치에서는 세정액을 저장함과 동시에 저장된 세정액중에 반도체웨이퍼(W)를 침적하여 그 표면을 세정하는 세정조(30)과, 상기 세정조(30)과 순수공급원(31)을 접속하는 세정액공급관(33)과, 약액을 저장하기 위한 액약저장용기(34)와, 상기 세정액공급관(33)과 상기 약액저장용기(34)를 접속하는 약액공급관(36)과, 상기 약액공급관(36)에 설치된 주입개폐절환밸브(35)와, 상기 약액공급관(36)에 약액공급수단으로서 왕복구동식 펌프 예를 들어 다이어프램 펌프(37)이 설치되어 이루어지는 처리장치가 제공된다.
따라서, 본 발명에 관계하는 처리장치에서는 왕복구동식 펌프에 의한 약액의 반송에 의해, 순수나 건조가스용 반송가스의 유량 또는 압력의 변동에 영향받는 일 없이 소정량의 약액을 순수중 또는 건조가스생성부에 주입하여 소정농도의 약액을 얻고, 이것을 세정 또는 건조에 제공할 수 있는 효과가 있다.-
公开(公告)号：KR100455904B1
公开(公告)日：2005-01-13
申请号：KR1019980037119
申请日：1998-09-09
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/304
CPC classification number: H01L21/02052 , B08B3/08 , B24B37/013 , H01L21/67057 , H01L22/26 , Y10S134/902
Abstract: A cleaning equipment generally comprises: a cleaning bath 30 for storing therein a cleaning solution to allow a semiconductor wafer W to be dipped in the cleaning solution to clean the surface of the wafer W; a cleaning solution supply pipe 33 for connecting the cleaning bath 30 to a pure water supply source 31; a chemical storing container 34 for storing therein a chemical; a chemical supply pipe 36 for connecting the cleaning solution supply pipe 33 to the chemical storing container 34 via an injection shut-off valve 35; and a diaphragm pump 37 for injecting a predetermined amount of chemical from the chemical storing container 34 into pure water flowing through the cleaning solution supply pipe 33. The temperature of the cleaning solution in the cleaning bath 30 is detected by, e.g., a temperature sensor 44. On the basis of a detection signal outputted from the temperature sensor 44, the amount of the chemical injected by the diaphragm pump 37 is controlled so that the concentration of the chemical is a predetermined concentration. Thus, a predetermined amount of chemical can be injected so as to clean the wafer W with a predetermined concentration of chemical.
Abstract translation: 清洁设备通常包括：清洁槽30，用于在其中存储清洁溶液以允许半导体晶片W浸入清洁溶液中以清洁晶片W的表面; 用于将清洁槽30连接到纯水供应源31的清洁溶液供应管33; 化学品储存容器34，用于在其中储存化学品; 将清洗液供给管33经由注入切断阀35与化学品收容容器34连接的药液供给管36， 以及隔膜泵37，用于将来自化学品存储容器34的预定量的化学品注入流过清洁溶液供应管33的纯水中。清洁槽30中的清洁溶液的温度由例如温度传感器 基于从温度传感器44输出的检测信号，控制由隔膜泵37注入的化学药品的量，使得化学品的浓度为预定浓度。 因此，可以注入预定量的化学制品，以便用预定浓度的化学制品清洁晶片W.
-
公开(公告)号：KR100433330B1
公开(公告)日：2004-10-20
申请号：KR1019960044985
申请日：1996-10-10
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/304
CPC classification number: H01L21/67057 , Y10S134/902
Abstract: The substrate cleaning method for performing cleaning processing on a plurality of substrates disposed such that front surfaces (Wa) of the substrates on which a circuit pattern is to be formed extend substantially in a vertical direction. This method comprises a step (a) of picking up substrates contained in a cassette (C), all together, from the cassette (C), a step (b) of making front surfaces (Wa) of adjacent substrates face each other without bringing the front surfaces (Wa) into contact with each other, while making back surfaces (Wb) of adjacent substrates face each other without bringing the back surfaces (Wb) into contact with each other, the front surfaces (Wa) of the adjacent substrates being situated with a pitch interval L1 interposed therebetween, and the pitch interval being set to be larger than a pitch interval L2 interposed between the back surfaces (Wb) of the adjacent substrates, a step (c) of dipping the plurality of substrates thus disposed, all together, into a chemical solution, and a step (d) of making the chemical solution flow between the front surfaces (Wa) of adjacent substrates of the plurality of substrates, facing each other, and between the back surfaces (Wb) of adjacent substrates of the plurality of substrates, facing each other.
Abstract translation: 该基板清洁方法用于对多个基板进行清洁处理，该多个基板设置成使得其上将形成电路图案的基板的前表面（Wa）基本上在垂直方向上延伸。 该方法包括从盒子（C）一起拾取盒子（C）中容纳的基底的步骤（a），使相邻基底的前表面（Wa）彼此面对的步骤（b） 在使相邻基板的背面（Wb）彼此面对而不使背面（Wb）彼此接触的同时，使正面（Wa）彼此接触，相邻基板的正面（Wa）为 以夹着间距L1的方式配置，间距设定得比相邻基板的背面（Wb）之间的间距L2大，将配置的多个基板浸渍的工序（c） （化合物溶液），以及使化学溶液在多个基板的相邻基板的前表面（Wa）彼此面对并在相邻的后表面（Wb）之间流动的步骤（d） 的底物 多个基板，彼此面对。 ＆lt;图像＆GT;
-
-
-
-
-
-
-
-
-
Search Results
65
records
(took 0.042 seconds)
