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公开(公告)号:DE502005008455D1
公开(公告)日:2009-12-17
申请号:DE502005008455
申请日:2005-08-08
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor: ARNDT KARLHEINZ , LIM HUEY LING RENA , BOGNER GEORG , GRUBER STEFAN , SCHNEIDER MARKUS
IPC: H01L21/48 , H01L23/495
Abstract: Disclosed is a leadframe for at least one electronic component, comprising at least two electrical lead elements, each of which comprises at least one electrical lead tab and at least one retention tab. Provided between the at least one retention tab and the lead element is a score defining a parallel offset between the retention tab and the adjacent region of the lead element. An additional parallel offset is defined between the lead element and the electrical lead tab, such that the retention tab and the electrical lead tab are located in a common plane. The score enables the retention tab to be removed easily without the need for a disadvantageous punched gap between the lead element and the retention tab.
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公开(公告)号:DE102007061479A1
公开(公告)日:2009-06-25
申请号:DE102007061479
申请日:2007-12-20
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor: SORG JOERG , GRUBER STEFAN , BOGNER GEORG
Abstract: A light emitting diode chip includes a device for protection against overvoltages, e.g., an ESD protection device. The ESD protection device is integrated into a carrier, on which the semiconductor layer sequence of the light emitting diode chip is situated, and is based on a specific doping of specific regions of said carrier. By way of example, the ESD protection device is embodied as a Zener diode that is connected to the semiconductor layer sequence by means of an electrical conductor structure.
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公开(公告)号:DE102007044198A1
公开(公告)日:2009-03-19
申请号:DE102007044198
申请日:2007-09-17
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor: BOGNER GEORG , GRUBER STEFAN , LIM HUEY LING RENA
Abstract: The component (1) has a diode chip (3) emitting and/or detecting electromagnetic radiation during operation of the chip. The chip and an electrostatic discharge (ESD) protection element (4) e.g. resistor, are arranged on sides of a carrier (2), where the sides are opposite to each other. The carrier has partial carriers (21, 22) that are combined, where the chip is arranged on one of the partial carriers and the element is arranged on the other partial carrier. The partial carriers are mechanically connected with each other by an electrically isolating adhesive agent. An independent claim is also included for a method for manufacturing an opto-electronic component.
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公开(公告)号:DE102007010244A1
公开(公告)日:2008-08-07
申请号:DE102007010244
申请日:2007-03-02
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor: GROETSCH STEFAN , BOGNER GEORG , HAHN BERTHOLD , HAERLE VOLKER , PETERSEN KIRSTIN
IPC: H01L33/50
Abstract: At least two semiconductor components emit electromagnetic radiation in different wavelength ranges. The superimposition of these electromagnetic radiations of all semiconductor components has at least one fraction in the visible wavelength range. At least one of the semiconductor components has a luminescence conversion element in the beam path.
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公开(公告)号:DE102007001706A1
公开(公告)日:2008-07-17
申请号:DE102007001706
申请日:2007-01-11
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor: BOGNER GEORG , GRUBER STEFAN , ZEILER THOMAS , KIRSCH MARKUS
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公开(公告)号:DE102006046038A1
公开(公告)日:2008-04-03
申请号:DE102006046038
申请日:2006-09-28
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor: BOGNER GEORG , GROETSCH STEFAN , KIRCHBERGER GUENTER , STREUBEL KLAUS , WINDISCH REINER , WIRTH RALPH
IPC: H01L33/08
Abstract: The semiconductor body has two radiation-generating active layers, where each layer has a forward voltage (Uled). The active layers are adjusted to an operating voltage (Ub) such that a voltage (Uw) dropping at a series resistor formed in series to the active layers is larger as a voltage (Uh) dropping at the semiconductor body. The voltage (Uw) is smaller than the smallest forward voltage dropping in the semiconductor body.
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公开(公告)号:DE50210938D1
公开(公告)日:2007-10-31
申请号:DE50210938
申请日:2002-10-28
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor: BOGNER GEORG , BRUNNER HERBERT , KRAEUTER GERTRUD , WAITL GUENTER
IPC: H01L31/0203 , H01L33/48 , H01L33/60
Abstract: Optoelectronic component, having a housing body (2), an optoelectronic semiconductor chip (3) arranged in a recess (6) of the housing body, and having electrical terminals (1A, 1B), the semiconductor chip being electrically conductively connected to the electrical terminals of the leadframe. The housing body (2) is formed from an encapsulation material, with a filler which has a high degree of reflection in a wavelength range from the UV range.
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公开(公告)号:DE50307780D1
公开(公告)日:2007-09-06
申请号:DE50307780
申请日:2003-09-29
Applicant: SIEMENS AG , OSRAM OPTO SEMICONDUCTORS GMBH
Inventor: BOGNER GEORG , KROMOTIS PATRICK , MAYER RALF , NOLL HEINRICH , WINTER MATTHIAS
IPC: H01L31/0203 , H01L33/48 , H01L33/64
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公开(公告)号:DE10117890B4
公开(公告)日:2007-06-28
申请号:DE10117890
申请日:2001-04-10
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor: BOGNER GEORG , BRUNNER HERBERT , WAITL GUENTER
IPC: H01L21/68 , H01L31/0203 , H01L31/0224 , H01L33/48 , H01L33/62 , H01S5/022 , H01S5/024
Abstract: Production of a semiconductor component which emits and receives radiation comprises forming and preparing an electrical leadframe (2); mounting a chip (5) ; placing an injection mold on the lead frame so that the semiconductor chip lies in a chip cavity of a molding stamp of the mold for a radiation window (8); extruding the leadframe with a housing base body (1); and encapsulating the chip. Production of a semiconductor component which emits and receives radiation comprises forming and preparing an electrical leadframe (2) having a chip assembly region, a wire connecting region (10) and external electrical connecting strips (3a, 3b); mounting a chip (5) which emits and receives radiation on the chip assembly region using a thermally conducting connecting material having a melting temperature above the solder temperature of the subsequent component steps; placing an injection mold on the lead frame so that the semiconductor chip lies in a chip cavity of a molding stamp of the mold for a radiation window (8); extruding the leadframe with a housing base body (1) so that the semiconductor chip is arranged in the window; and encapsulating the chip. An Independent claim is also included for a semiconductor component produced. Preferred Features: The connecting material is a hard solder. The melting point of the connecting material is 260 deg C or more. The chip is surrounded by a plastic composition.
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公开(公告)号:DE102004031391A1
公开(公告)日:2006-01-26
申请号:DE102004031391
申请日:2004-06-29
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor: HIEGLER MICHAEL , SCHMID JOSEF , ENGL MORITZ , GROETSCH STEFAN , ARNDT KARLHEINZ , SCHNEIDER MARKUS , BOGNER GEORG
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