Abstract:
기판 처리 장치에 설치되는 증기 발생기(40')는 PTFE와 PFA의 혼합물로 이루어지는 중공 원통형 부재(302)와, 이 원통형 부재(302)의 양단에 접속된 1쌍의 측벽판(303)을 갖는 탱크(301)를 갖추고 있다. 측벽판(303)은 알루미늄 합금으로 이루어지며, 그 내면에 PFA 피복이 실시되어 있다. 탱크(301)의 주위는 탱크 내압에 기인하는 탱크의 변형을 방지하기 위한 알루미늄 합금제의 셸(305)에 의해 덮여 있다. 셸(305)의 판형 부재(307)의 외면에는 히터(308)가 부착되어 있다. 셸(305)은 탱크(301)를 구속하여, 원통형 부재(302)와 측벽판(303) 사이의 탄성 시일(304)을 눌러 찌그러뜨려, 원통형 부재(302)와 측벽판(303)을 밀봉 결합시킨다.
Abstract:
A substrate processing device is provided to suppress mist generation on the substrate by using a rotary cup, an exhaust and drain cup, and an exhaust mechanism. A substrate holding unit is rotated with a substrate. A rotating device rotates the substrate holding unit. A processing liquid supplying unit supplies the processing liquid to the substrate. A rotary cup is installed outside the substrate holding unit to surround the substrate held in the substrate holding unit. A wall unit is rotated with the substrate holding unit and receives the processing liquid separated from the rotating substrate. An exhaust and drain cup(201) is installed outside the rotary cup to surround the rotary cup and the substrate holding unit. An annular liquid receiving unit(56) receives the processing liquid separated from the rotating substrate and includes an inner annular space(99b) installed in the inner side than the annular liquid receiving unit. An exhaust device(200) is connected to the exhaust and drain cup.
Abstract:
본 발명은 반도체 웨이퍼나 LCD용 유리기판 등의 기판을 밀봉된 처리기내에서 처리가스 예를 들면, 오존 및 용매증기 예를 들면 수증기 등의 처리 유체를 이용해서 처리하는 기판처리장치 및 기판처리방법에 관한 것이다. 본 발명에서는 공통의 용매증기(수증기) 공급원(41) 및 처리가스(오존가스) 공급원(42)로부터 복수의 처리용기(30A, 30B)에 오존가스 및 수증기가 공급되고, 처리용기내의 압력 제어는 각 처리용기에 접속된 배출관로(80A, 80B)에 각각 설치된 가변 트로틀밸브(50A, 50B)의 개방도를 조절하는 것에 의해 행해진다.
Abstract:
A liquid treatment device having a substrate holding section (2) for horizontally holding a wafer (W) and capable of rotating with the wafer (W), a rotation cup (4) having an annular shape so as to surround the wafer (W) held by the substrate holding section (2) and capable of rotating with the wafer (W), a rotation mechanism (3) for integrally rotating the rotation cup (4) and the substrate holding section (2), a nozzle (5) for supplying a treatment liquid for the wafer (W) and a cleaning liquid for the rotation cup (4), a liquid supply section (85) for supplying the treatment liquid and cleaning liquid to the nozzle (5), and a nozzle movement mechanism for moving the nozzle (5) between a first position at which the liquid is discharged to the wafer (W) and a second position at which the liquid is discharged to an external portion of the rotation cup (4). The wafer (W) is treated with the liquid with the nozzle (5) positioned at the wafer treatment position, and the cleaning liquid is discharged to the external portion of the rotation cup with the nozzle (5) positioned at the rotation cup cleaning position.
Abstract:
A liquid treatment system is provided to save a space through miniaturization and perform a uniform treatment by suppressing the unevenness of a pipe. A liquid treatment system includes a liquid treating part(21b), a treatment liquid storing part(21h), and a pipe unit(21f). The liquid treating unit includes a plurality of liquid treating units(22) for treating liquid by supplying the liquid to a substrate. The treatment liquid storing part stores the treatment liquid supplied to the plurality of liquid treating units of the liquid treating part. The pipe unit is provided with a supply pipe for introducing the treatment liquid to the plurality of liquid treating units from the treatment liquid storing part. The treatment liquid storing part, the pipe unit, and the liquid treating part are laminated in a common case sequentially from the bottom. The supply pipe of the pipe unit is provided with a horizontal pipe portion extending horizontally in the arrangement direction of the plurality of liquid treating units. The treatment liquid is introduced into the liquid treating units from the horizontal pipe portion.