Method and system for inspecting an EUV mask

    公开(公告)号:US10088438B2

    公开(公告)日:2018-10-02

    申请号:US15339421

    申请日:2016-10-31

    Abstract: A structure for grounding an extreme ultraviolet mask (EUV mask) is provided to discharge the EUV mask during the inspection by an electron beam inspection tool. The structure for grounding an EUV mask includes at least one grounding pin to contact conductive areas on the EUV mask, wherein the EUV mask may have further conductive layer on sidewalls or/and back side. The inspection quality of the EUV mask is enhanced by using the electron beam inspection system because the accumulated charging on the EUV mask is grounded. The reflective surface of the EUV mask on a continuously moving stage is scanned by using the electron beam simultaneously. The moving direction of the stage is perpendicular to the scanning direction of the electron beam.

    Apparatus and method for minimizing thermal distortion in electrodes used with ion sources

    公开(公告)号:US09916966B1

    公开(公告)日:2018-03-13

    申请号:US15415944

    申请日:2017-01-26

    CPC classification number: H01J37/242 H01J37/08

    Abstract: An apparatus for improving the uniformity of an ion beam is disclosed. The apparatus includes a heating element to heat an edge of the suppression electrode that is located furthest from the suppression aperture. In operation, the edge of the suppression electrode nearest to the suppression electrode may be heated by the ion beam. This heat may cause the suppression electrode to distort, affecting the uniformity of the ion beam. By heating the distal edge of the suppression electrode, the thermal distortion of the suppression electrode can be controlled. In other embodiments, the distal edge of the suppression electrode is heated to create a more uniform ion beam. By monitoring the uniformity of the ion beam downstream from the suppression electrode, such as by use of a beam uniformity profiler, a controller can adjust the heat applied to the distal edge to achieve the desired ion beam uniformity.

    Inter-electrode gap variation methods for compensating deposition non-uniformity

    公开(公告)号:US09859088B2

    公开(公告)日:2018-01-02

    申请号:US14701479

    申请日:2015-04-30

    Inventor: Fayaz Shaikh

    Abstract: A method for depositing material layers with gap variation between film deposition operations is provided. A material layer is deposited over a substrate and is performed in a plasma chamber having a bottom electrode and a top electrode. The method sets a first gap between the bottom and top electrodes and performs plasma deposition to deposit a first film of the material layer over the substrate while the first gap is set between the bottom and top electrodes. Setting a second gap between the bottom a top electrodes and performs plasma deposition to deposit a second film of the material layer over the substrate while the second gap is set between the bottom and top electrodes. The material layer is from the first and second films and the first gap is varied to the second gap to offset pre-characterized non-uniformities when depositing the first film followed by the second film.

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