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公开(公告)号:US10088438B2
公开(公告)日:2018-10-02
申请号:US15339421
申请日:2016-10-31
Applicant: Hermes Microvision, Inc.
Inventor: Guochong Weng , Youjin Wang , Chiyan Kuan , Chung-Shih Pan
Abstract: A structure for grounding an extreme ultraviolet mask (EUV mask) is provided to discharge the EUV mask during the inspection by an electron beam inspection tool. The structure for grounding an EUV mask includes at least one grounding pin to contact conductive areas on the EUV mask, wherein the EUV mask may have further conductive layer on sidewalls or/and back side. The inspection quality of the EUV mask is enhanced by using the electron beam inspection system because the accumulated charging on the EUV mask is grounded. The reflective surface of the EUV mask on a continuously moving stage is scanned by using the electron beam simultaneously. The moving direction of the stage is perpendicular to the scanning direction of the electron beam.
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公开(公告)号:US10074520B2
公开(公告)日:2018-09-11
申请号:US15665091
申请日:2017-07-31
Applicant: Lam Research Corporation
Inventor: John C. Valcore, Jr. , Bradford J. Lyndaker
IPC: H01J37/00 , H01J37/32 , H03J7/00 , H01J37/244 , H05H1/46
CPC classification number: H01J37/32183 , H01J37/244 , H01J37/32082 , H01J37/32137 , H01J37/32146 , H01J37/32155 , H01J37/32174 , H03J7/00 , H05H1/46 , H05H2001/4682
Abstract: Systems and methods for adjusting power and frequency based on three or more states are described. One of the methods includes receiving a pulsed signal having multiple states. The pulsed signal is received by multiple radio frequency (RF) generators. When the pulsed signal having a first state is received, an RF signal having a pre-set power level is generated by a first RF generator and an RF signal having a pre-set power level is generated by a second RF generator. Moreover, when the pulsed signal having a second state is received, RF signals having pre-set power levels are generated by the first and second RF generators. Furthermore, when the pulsed signal having a third state is received, RF signals having pre-set power levels are generated by the first and second RF generators.
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公开(公告)号:US10074511B2
公开(公告)日:2018-09-11
申请号:US15163725
申请日:2016-05-25
Applicant: Hitachi High-Technologies Corporation
Inventor: Takehiro Hirai , Yohei Minekawa , Yutaka Tandai
IPC: H01J37/00 , H01J37/22 , H01J37/285 , H01J37/28
CPC classification number: H01J37/222 , G06T7/001 , G06T2207/10061 , G06T2207/30148 , H01J37/28 , H01J37/285 , H01J2237/221 , H01J2237/24592 , H01J2237/28 , H01J2237/2817 , H01L22/12 , H01L22/20
Abstract: A defect image classification apparatus includes a control unit that selects images obtained from at least some detectors among a plurality of detectors, associated with kinds of defects to be a classification result of an automatic defect classification processing unit, as images displayed initially on a display unit. The control unit associates the kinds of the defects and the images displayed initially on the display unit, on the basis of a switching operation log when a user classifies images of defects determined previously as the same kinds as the kinds of the defects determined by the automatic defect classification processing unit.
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公开(公告)号:US10014152B2
公开(公告)日:2018-07-03
申请号:US15386740
申请日:2016-12-21
Applicant: JEOL Ltd.
Inventor: Shigeyuki Morishita
IPC: H01J37/00 , H01J37/141 , H01J37/12 , H01J37/145
CPC classification number: H01J37/141 , H01J37/12 , H01J37/145 , H01J37/1471 , H01J37/1478 , H01J37/153 , H01J37/222 , H01J37/265 , H01J37/28 , H01J2237/1506 , H01J2237/1532 , H01J2237/1534 , H01J2237/223 , H01J2237/2802
Abstract: There are disclosed an aberration correction method and a charged particle beam system capable of correcting off-axis first order aberrations. The aberration correction method is for use in the charged particle beam system (100) equipped with an aberration corrector (30) which has plural stages of multipole elements (32a, 32b) and a transfer lens system (34) disposed between the multipole elements (32a, 32b). The method includes varying the excitation of the transfer lens system (34) and correcting off-axis first order aberrations.
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公开(公告)号:US09997327B1
公开(公告)日:2018-06-12
申请号:US15372536
申请日:2016-12-08
Applicant: JEOL Ltd.
Inventor: Hidetaka Sawada , Yu Jimbo , Masashi Shimizu
IPC: H01J37/00 , H01J37/153 , H01J37/26 , H01J37/22 , H01J37/10 , H01J37/147
CPC classification number: H01J37/153 , H01J37/10 , H01J37/1474 , H01J37/22 , H01J37/26 , H01J2237/1534 , H01J2237/182
Abstract: There is provided a liner tube capable of reducing the effects of magnetic field variations on an electron beam. The liner tube (10) is disposed inside the electron optical column (2) of an electron microscope (100). The interior of the tube (10) forms a path for the electron beam (EB). The liner tube (10) has a first cylindrical member (110) that is made of copper, gold, silver, or an alloy consisting principally of one of these metals.
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46.
公开(公告)号:US09972474B2
公开(公告)日:2018-05-15
申请号:US15224628
申请日:2016-07-31
Applicant: FEI Company
Inventor: Cornelis van Beek , Frederick H. Schamber , N. William Parker
IPC: H01J37/00 , H01J37/244 , H01J37/16 , H01J37/18 , H01J37/20 , G01N23/225 , H01J37/26
CPC classification number: H01J37/244 , G01N23/203 , G01N23/2252 , H01J37/16 , H01J37/18 , H01J37/20 , H01J37/26 , H01J2237/164 , H01J2237/2442 , H01J2237/24475 , H01J2237/2448 , H01J2237/24578 , H01J2237/2807
Abstract: An electron microscope including a vacuum chamber for containing a specimen to be analyzed, an optics column, including an electron source and a final probe forming lens, for focusing electrons emitted from the electron source, a specimen stage positioned in the vacuum chamber under the probe forming lens for holding the specimen, and multiple x-ray detectors positioned within the vacuum chamber, at different takeoff angles with respect to the sample's x-ray emission position in the chamber. Takeoff angles are provided to improve the counting efficiency of the various sensors. Multiple detectors of different types may be supported within the vacuum chamber on a mechanical support system, which may be adjustable. A method includes operating the sensors to optimize the time required for accurate x-ray counting by gathering data at the multiple takeoff angles.
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47.
公开(公告)号:US09916966B1
公开(公告)日:2018-03-13
申请号:US15415944
申请日:2017-01-26
Inventor: James P. Buonodono
CPC classification number: H01J37/242 , H01J37/08
Abstract: An apparatus for improving the uniformity of an ion beam is disclosed. The apparatus includes a heating element to heat an edge of the suppression electrode that is located furthest from the suppression aperture. In operation, the edge of the suppression electrode nearest to the suppression electrode may be heated by the ion beam. This heat may cause the suppression electrode to distort, affecting the uniformity of the ion beam. By heating the distal edge of the suppression electrode, the thermal distortion of the suppression electrode can be controlled. In other embodiments, the distal edge of the suppression electrode is heated to create a more uniform ion beam. By monitoring the uniformity of the ion beam downstream from the suppression electrode, such as by use of a beam uniformity profiler, a controller can adjust the heat applied to the distal edge to achieve the desired ion beam uniformity.
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公开(公告)号:US09892927B2
公开(公告)日:2018-02-13
申请号:US15443151
申请日:2017-02-27
Applicant: Texas Instruments Incorporated
Inventor: Malcolm J. Bevan , Haowen Bu , Hiroaki Niimi , Husam N. Alshareef
IPC: H01J37/00 , H01L21/00 , H01L21/28 , H01L21/02 , H01L29/51 , H01J37/32 , C23C16/458 , C23C16/455
CPC classification number: H01L21/28158 , C23C16/45557 , C23C16/4582 , H01J37/32752 , H01J37/32825 , H01J37/32899 , H01J2237/3321 , H01L21/02181 , H01L21/0223 , H01L21/02255 , H01L21/02318 , H01L21/02323 , H01L21/02326 , H01L21/02329 , H01L21/02332 , H01L21/0234 , H01L21/28035 , H01L21/28167 , H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L21/28229 , H01L21/3105 , H01L21/31604 , H01L21/318 , H01L21/3205 , H01L21/324 , H01L21/67161 , H01L21/67167 , H01L21/67196 , H01L21/67201 , H01L21/6776 , H01L29/42364 , H01L29/4908 , H01L29/4916 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/66477 , H01L29/78
Abstract: Oxide growth of a gate dielectric layer that occurs between processes used in the fabrication of a gate dielectric structure can be reduced. The reduction in oxide growth can be achieved by maintaining the gate dielectric layer in an ambient effective to mitigate oxide growth of the gate dielectric layer between at least two sequential process steps used in the fabrication the gate dielectric structure. Maintaining the gate dielectric layer in an ambient effective to mitigate oxide growth also improves the uniformity of nitrogen implanted in the gate dielectric.
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公开(公告)号:US09859088B2
公开(公告)日:2018-01-02
申请号:US14701479
申请日:2015-04-30
Applicant: Lam Research Corporation
Inventor: Fayaz Shaikh
IPC: C23C16/50 , H01J37/00 , C23C16/455 , C23C16/505
CPC classification number: H01J37/00 , C23C16/45565 , C23C16/45587 , C23C16/505 , H01J37/32091 , H01J37/32568 , H01J37/32926 , H01J37/32935
Abstract: A method for depositing material layers with gap variation between film deposition operations is provided. A material layer is deposited over a substrate and is performed in a plasma chamber having a bottom electrode and a top electrode. The method sets a first gap between the bottom and top electrodes and performs plasma deposition to deposit a first film of the material layer over the substrate while the first gap is set between the bottom and top electrodes. Setting a second gap between the bottom a top electrodes and performs plasma deposition to deposit a second film of the material layer over the substrate while the second gap is set between the bottom and top electrodes. The material layer is from the first and second films and the first gap is varied to the second gap to offset pre-characterized non-uniformities when depositing the first film followed by the second film.
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公开(公告)号:US09754764B2
公开(公告)日:2017-09-05
申请号:US14991507
申请日:2016-01-08
Applicant: FEI Company
Inventor: Marcus Straw , Mark Emerson
IPC: H01J37/00 , H01J37/304 , H01J37/22 , H01J37/305 , G21K5/00 , G21K5/08
CPC classification number: H01J37/3045 , G21K5/00 , G21K5/08 , H01J37/226 , H01J37/228 , H01J37/3056 , H01J2237/1501 , H01J2237/28
Abstract: A method and apparatus for aligning a laser beam coincident with a charged particle beam. The invention described provides a method for aligning the laser beam through the center of an objective lens and ultimately targeting the eucentric point of a multi-beam system. The apparatus takes advantage of components of the laser beam alignment system being positioned within and outside of the vacuum chamber of the charged particle system.
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