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公开(公告)号：EP1495365A4
公开(公告)日：2009-06-03
申请号：EP03723925
申请日：2003-04-01
Applicant: IBM
Inventor： PFEIFFER DIRK , ANGELOPOULOS MARIE , BABICH KATHERINA , BROCK PHILLIP , HUANG WU-SONG , MAHOROWALA ARPAN P , MEDEIROS DAVID R , SOORIYAKUMARAN RATNAM
IPC: G03F7/11 , G03F7/004 , G03F7/038 , G03F7/075 , G03F7/09 , H01L21/027 , G03F7/00 , G03F7/26 , H01L21/312
CPC classification number: H01L21/0276 , G03F7/0045 , G03F7/0757 , G03F7/091 , Y10S430/151
Abstract: Antireflective compositions characterized by the presence of an SiO-containing polymer having chromophore moieties and transparent moieties are useful antireflective hardmask compositions in lithographic processes. These compositions provide outstanding optical, mechanical and etch selectivity properties while being applicable using spin-on application techniques. The compositions of the invention are advantagously useful with shorter wavelenght lithographic processes and/or have minimal residual acid content.
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公开(公告)号：EP1497699A4
公开(公告)日：2008-07-09
申请号：EP03716998
申请日：2003-04-07
Applicant: IBM
Inventor： ANGELOPOULOS MARIE , BABICH KATHERINA , CHEY S JAY , HIBBS MICHAEL STRAIGHT , LANG ROBERT N , MAHOROWALA ARPAN PRAVIN , RACETTE KENNETH CHRISTOPHER
IPC: G03F1/32 , C23C14/06 , C23C14/08 , H01L21/027 , G03F9/00 , C23C14/00 , C23C14/32 , G03C5/00 , G03F1/08
CPC classification number: G03F1/32 , C23C14/0676 , C23C14/08
Abstract: An attenuating embedded phase shift photomask blank that produces a phase shift of the transmitted light is formed with an optically translucent film made of metal, silicon, nitrogen and oxygen. An etch stop layer is added to improve the etch selectivity of the phase shifting layer. A wide range of optical transmission (0.001 % up to 15 % at 157 nm) is obtained by this process.
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3.发明公开USE OF MIXED BASES TO ENHANCE PATTERNED RESIST PROFILES ON CHROME OR SENSITIVE SUBSTRATES 审中-公开- 混合基地改善抵制铬或敏感基材结构性PROFILES
公开(公告)号：EP1716450A4
公开(公告)日：2007-06-27
申请号：EP04710274
申请日：2004-02-11
Applicant: IBM
Inventor： MOREAU WAYNE M , ANGELOPOULOS MARIE , HUANG WU-SONG , MEDEIROS DAVID R , PETRILLO KAREN E
CPC classification number: G03F7/0045 , G03F1/78 , G03F7/0392 , G03F7/40 , Y10S430/143
Abstract: Resist compositions having good footing properties even on difficult substrates are obtained by using a combination of base additives including a room temperature solid base, and a liquid low vapor pressure base. The compositions are especially useful on metal substrates such as chromium-containing layers commonly used in mask-making.
Abstract translation: 抗蚀剂甚至在困难的基板良好的基础性质的组合物通过使用包括室温下为固体的基础上，和液体低蒸气压碱碱添加剂的组合获得。 该组合物的爱在金属衬底上是特别有用的：如在掩模制造常用的含铬层。
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公开(公告)号：EP1678556A4
公开(公告)日：2010-01-13
申请号：EP04796270
申请日：2004-10-22
Applicant: IBM
Inventor： HUANG WU-SONG , ALLEN ROBERT D , ANGELOPOULOS MARIE , KWONG RANEE W , SOORIYAKUMARAN RATNAM
IPC: G03C1/76 , G03F20060101 , G03F7/004 , G03F7/075
CPC classification number: G03F7/0757 , G03F7/0045 , G03F7/0046
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5.发明公开HIGH SENSITIVITY RESIST COMPOSITIONS FOR ELECTRON-BASED LITHOGRAPHY 有权E E E EN E E E E E E E E E E E
公开(公告)号：EP1586005A4
公开(公告)日：2009-05-13
申请号：EP02786917
申请日：2002-12-05
Applicant: IBM
Inventor： HUANG WU-SONG , LI WENJIE , MOREAU WAYNE , MEDEIROS DAVID E , PETRILLO KAREN E , LANG ROTBERT N , ANGELOPOULOS MARIE
CPC classification number: G03F7/0045 , G03F7/0392
Abstract: The resist compositions having an acid sensitive imaging polymer and a radiation sensitive acid generator component comprising: (i) a first radiation sensitive acid generator selected from the group consisting of dissolution-inhibiting acid generators, and (ii) a second radiation sensitive acid generator selected from the group consisting of unprotected acidic group-functionalized acid generators and acid labile group-protected acidic group-functionalized radiation sensitive acid generators; enables formation of high sensitivity resists suitable for use in EPL, EUV, soft x-ray, and other low energy intensity lithographic imaging applications. The resist compositions may be useful in other lithographic processes as well.
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Patent Agency Ranking
公开(公告)号：EP1521797A4
公开(公告)日：2006-12-20
申请号：EP02765835
申请日：2002-07-11
Applicant: IBM
Inventor： ANGELOPOULOS MARIE , ARIRAM ARI , GUARNIERI C RICHARD , HUANG WU-SONG , KWONG RANEE , MOREAU WAYNE M
IPC: C08G77/04 , C08K5/00 , B05D5/00 , B32B9/04 , C08G77/14 , C08G77/38 , C08J7/18 , C08K5/34 , C08K5/42 , C08L83/04 , C08L83/06 , G03C1/76 , G03F7/075 , G03F7/09 , H01L21/312 , H01L21/3213
CPC classification number: G03F7/091 , C08G77/04 , C08G77/38 , C08K5/3445 , C08K5/42 , C08L83/04 , C08L83/06 , C09D183/04 , G03F7/0752 , C08L2666/28 , C08L2666/36
Abstract: Antireflective compositions characterized by the presence of an SiO-containing polymer having pendant chromophore moieties are useful antireflective coating/hardmask compositions in lithographic processes. These compositions provide outstanding optical, mechanical and etch selectivity properties while being applicable using spin-on application techniques. The compositions are especially useful in lithographic processes used to configure underlying material layers on a substrate, especially metal or semiconductor layers.
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公开(公告)号：WO02069037A2
公开(公告)日：2002-09-06
申请号：PCT/GB0200450
申请日：2002-02-01
Inventor： ANGELOPOULOS MARIE , BABICH KATHERINA , BROOKS CAMERON JAMES , CHEY JAY , GUARNIERI RICHARD , HIBBS MICHAEL STRAIGHT , RACETTE KENNETH CHRISTOPHER
CPC classification number: G03F1/32 , C23C14/0641 , C23C14/0676 , C23C14/352 , G03F7/16 , Y10T428/265
Abstract: An attenuating embedded phase shift photomask blank that produce s a phase shift of the transmitted light is formed with an optically translucent film made of metal, silicon, nitrogen or metal, silicon, nitrogen and oxygen. A wide range of optical transmission (0.001 % up to 20 % at 193 nm) is obtained by this process. A post deposition process is implemented to obtain the desired properties (stability of optical properties with respect to laser irradiation and acid treatment) for use in industry. A special fabrication process for the sputter target is implemented to lower the defects of the film.
Abstract translation: 使用由金属，硅，氮或金属，硅，氮和氧制成的光学半透明的膜形成产生透射光的相移的衰减的嵌入式相移光掩模坯料。 通过该方法获得宽范围的光学透射（0.001nm至高达193nm的20％）。 实现后沉积工艺以获得用于工业中的所需性能（相对于激光照射和酸处理的光学性质的稳定性）。 实现用于溅射靶的特殊制造工艺以降低膜的缺陷。
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公开(公告)号：JP2001066767A
公开(公告)日：2001-03-16
申请号：JP2000209547
申请日：2000-07-11
Applicant: IBM
Inventor： ANGELOPOULOS MARIE , ARI AVIRAMU , EDWARD D BAABICHI , TIMOTHY ARAN BRANNER , THOMAS BENJAMIN FAURE , C RICHARD GUARNIERI , KWONG RANEE W , PETRILLO KAREN E
Abstract: PROBLEM TO BE SOLVED: To obtain a resist composition, having responsiveness to imaging irradiation and enhanced resistance to reactive ion etching by incorporating a radiation sensitive polymer and an organometallic compound of a specified metal. SOLUTION: This resist composition contains a radiation responsive polymer and an organometallic compound of a metal selected from among the group comprising yttrium, aluminum, iron, titanium, zirconium, hafnium and a mixture of these. The organometallic compound is, e.g. yttrium trishexafluoroacetylacetonate or yttrium tris(2,2,6,6-tetramethyl)-3,5-heptanedioate and the amount of the organometallic compound used is about 0.1-25 wt.% of the weight of the radiation sensitive polymer. The organometallic compound may be used in combination with various resist polymers including a chemically amplified resist and a non-chemically amplified resist.
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9.发明申请USE OF MIXED BASES TO ENHANCE PATTERNED RESIST PROFILES ON CHROME OR SENSITIVE SUBSTRATES 审中-公开混合基础的使用以加强对铬或敏感基板上的图案耐腐蚀型材
公开(公告)号：WO2005088393A8
公开(公告)日：2006-09-14
申请号：PCT/US2004004144
申请日：2004-02-11
Applicant: IBM , MOREAU WAYNE M , ANGELOPOULOS MARIE , HUANG WU-SONG , MEDEIROS DAVID R , PETRILLO KAREN E
Inventor： MOREAU WAYNE M , ANGELOPOULOS MARIE , HUANG WU-SONG , MEDEIROS DAVID R , PETRILLO KAREN E
CPC classification number: G03F7/0045 , G03F1/78 , G03F7/0392 , G03F7/40 , Y10S430/143
Abstract: Resist compositions having good footing properties even on difficult substrates are obtained by using a combination of base additives including a room temperature solid base, and a liquid low vapor pressure base. The compositions are especially useful on metal substrates such as chromium-containing layers commonly used in mask-making.
Abstract translation: 通过使用包括室温固体碱和液体低蒸气压基料的基础添加剂的组合，可获得即使在困难的基材上也具有良好基础性能的抗蚀剂组合物。 该组合物在通常用于掩模制造的金属基材如含铬层上特别有用。
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10.发明专利Silicon-containing composition for spin-on antireflection coating (arc)/hard mask 有权用于旋转抗反射涂层（ARC）/硬掩模的含硅组合物
公开(公告)号：JP2005115380A
公开(公告)日：2005-04-28
申请号：JP2004291846
申请日：2004-10-04
Applicant: Internatl Business Mach Corp
, インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation Inventor： ANGELOPOULOS MARIE , HUANG WU-SONG , MAHOROWALA ARPAN P , MOREAU WAYNE , PFEIFFER DIRK , RATONAMU SOORIYAKUMARAN
CPC classification number: G03F7/0754 , G03F7/0045 , G03F7/091 , Y10S430/106 , Y10S430/115
Abstract: PROBLEM TO BE SOLVED: To provide a new and improved polymer composition which can be used for photolithography and has similar etching properties to those of Si.
SOLUTION: An antireflection composition characterized in the presence of a Si-containing polymer having a pendant chromophore moiety is regarded as an antireflection coating/hard mask composition useful in lithographic processes. The composition provides significant optical characteristics, mechanical properties and etching selectivity and is applicable by a spin-on coating method. The composition is particularly useful in lithographic processes used to configure an underlay material layer on a substrate, in particular, a metal layer or a semiconductor layer.
COPYRIGHT: (C)2005,JPO&NCIPIAbstract translation: 要解决的问题：提供可用于光刻的新的和改进的聚合物组合物，并具有与Si相似的蚀刻性能。 解决方案：特征在于存在具有侧发色团部分的含Si聚合物的抗反射组合物被认为是可用于光刻工艺的抗反射涂层/硬掩模组合物。 该组合物提供显着的光学特性，机械性能和蚀刻选择性，并且可以通过旋涂法来应用。 该组合物在用于在衬底，特别是金属层或半导体层上构造衬底材料层的光刻工艺中特别有用。 版权所有（C）2005，JPO＆NCIPI
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