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公开(公告)号：EP0698230A4
公开(公告)日：1995-10-24
申请号：EP94900495
申请日：1993-10-29
Applicant: IBM
Inventor： BRUNSVOLD WILLIAM ROSS , BREYTA GREGORY , DIPIETRO RICHARD ANTHONY , ITO HIROSHI , KNORS CHRISTOPHER JOHN , KWONG RANEE WAI-LING , MIURA STEVE SEIICHI , MONTGOMERY MELVIN WARREN , MOREAU WAYNE MARTIN , SACHDEV HARBANS SINGH , WELSH KEVIN MICHAEL
IPC: G03F7/004 , G03F7/039 , H01L21/027 , G03C5/16 , G03F7/029
CPC classification number: G03F7/039
Abstract: Resists for use in ultraviolet, electron beam and x-ray exposure devices comprising a polymeric or molecular composition the solubility of which is dependent upon the presence of acid removable protecting groups and a sulfonic acid precursor which generates a strong acid upon exposure to such radiation. The preferred sulfonic acid precursors are triflate esters or benzenesulfonyloxy esters of N-hydroxyimides.
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2.发明专利
公开(公告)号：JPH11176750A
公开(公告)日：1999-07-02
申请号：JP26220098
申请日：1998-09-17
Applicant: IBM
Inventor： AFZALI-ARDAKANI ALI , BRUNSVOLD WILLIAM ROSS , GELORME JEFFREY D , KOSBAR LAURA L , NANCY C RABIANKA , PATEL NIRANJAN M , PUSHUKARA RAAO VARAANASHII
IPC: G03F7/038 , G03F7/00 , H01L21/027
Abstract: PROBLEM TO BE SOLVED: To obtain high resolution which enables development by water base, by adding film formation polymer resin with phenol group by a specified formula, glycol uril derivative cross linking agent, radiolysis acid generation agent and organic base. SOLUTION: A photoresist composition comprises film formation polymer resin with phenol group. The phenol resin is copolymer of hydroxystyrene and hydroxycyclohexyl ethene shown by a formula I (n>1, 0
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公开(公告)号：JPH10182989A
公开(公告)日：1998-07-07
申请号：JP25249297
申请日：1997-09-17
Applicant: IBM
Inventor： BRUNSVOLD WILLIAM ROSS , FAHEY JAMES THOMAS , HEFFERON GEORGE JOSEPH , HUANG WU-SONG , JAGANNATHAN PREMLATHA , KATNANI AHMAD DAUOD , KHOJASTEH MAHMOUD , KWONG RANEE WAI-LING , KIM YAN LEE , SACHDEV HARBANS SINGH , SACHDEV KRISHNA GANDI , SOORIYAKUMARAN RATNAM , WOOD ROBERT LAVIN
IPC: C08L25/02 , C08L61/10 , C08L101/00 , G03F7/004 , G03F7/039 , H01L21/027
Abstract: PROBLEM TO BE SOLVED: To make a composition hardly receive a disadvantageous reaction with environmental contaminants, enhance the tolerance for variable or long delay between exposure and printing after the exposure or printing after the exposure and development, eliminate any deterioration in a profile, stabilize the solubility in solvents and impart storage life thereof in a solution for a long period at ambient temperature. SOLUTION: This microlithographic composition comprises a composition, containing a film-forming polymer substituted at the o-position with an acid unstable compound containing a ketal component in at least a part of a chemically bound recurring hydroxyl group and an acid-generating compound, capable of forming an acid by exposure to actinic radiations and chemically bound to the polymer and used as the microlithographic composition. The acid generated by the exposure initiates the cleavage of at least a part of the compound containing the ketal component and the exposed composition becomes selectively more soluble in an aqueous base as compared with an unexposed composition.
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公开(公告)号：DE69125745T2
公开(公告)日：1997-11-13
申请号：DE69125745
申请日：1991-01-25
Applicant: IBM
Inventor： BRUNSVOLD WILLIAM ROSS , KNORS CHRISTOPHER JOHN , MONTGOMERY MELVIN WARREN , MOREAU WAYNE MARTIN , WELSH KEVIN MICHAEL
IPC: G03F7/004 , G03F7/029 , G03F7/039 , H01L21/027 , H01L21/30
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Patent Agency Ranking
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公开(公告)号：DE69125745D1
公开(公告)日：1997-05-28
申请号：DE69125745
申请日：1991-01-25
Applicant: IBM
Inventor： BRUNSVOLD WILLIAM ROSS , KNORS CHRISTOPHER JOHN , MONTGOMERY MELVIN WARREN , MOREAU WAYNE MARTIN , WELSH KEVIN MICHAEL
IPC: G03F7/004 , G03F7/029 , G03F7/039 , H01L21/027 , H01L21/30
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公开(公告)号：DE69027799D1
公开(公告)日：1996-08-22
申请号：DE69027799
申请日：1990-02-02
Applicant: IBM
Inventor： BRUNSVOLD WILLIAM ROSS , KNORS CHRISTOPHER JOHN , KWONG RANEE WAI-LING , MIURA STEVE SEIICHI , MONTGOMERY MELVIN WARREN , MOREAU WAYNE MARTIN , SACHDEV HARBANS SINGH
IPC: G03F7/004 , G03F7/038 , G03F7/039 , H01L21/027 , H01L21/30
Abstract: Resists for use in photon, electron beam and x-ray exposure devices comprise a polymeric or molecular composition the solubility of which is dependent upon the presence of acid removable protecting groups and a sulfonic acid precursor which generates a strong acid upon exposure to such radiation. The preferred sulfonic acid precursors are triflate salts of imides.
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公开(公告)号：DE3750937D1
公开(公告)日：1995-02-16
申请号：DE3750937
申请日：1987-06-16
Applicant: IBM
Inventor： BRUNSVOLD WILLIAM ROSS , CROCKATT DALE MURRAY , CHOW MING-FEA , FRECHET JEAN-MARIE JOSEPH , CONLEY WILLARD EARL , HEFFERSON GEORGE JOSEPH , ITO HIROSHI , IWAMOTO NANCY ELLEN , WILLSON CARLTON GRANT
IPC: G03C1/72 , G03F7/004 , G03F7/038 , G03F7/039 , H01L21/027
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公开(公告)号：DE69027799T2
公开(公告)日：1997-01-23
申请号：DE69027799
申请日：1990-02-02
Applicant: IBM
Inventor： BRUNSVOLD WILLIAM ROSS , KNORS CHRISTOPHER JOHN , KWONG RANEE WAI-LING , MIURA STEVE SEIICHI , MONTGOMERY MELVIN WARREN , MOREAU WAYNE MARTIN , SACHDEV HARBANS SINGH
IPC: G03F7/004 , G03F7/038 , G03F7/039 , H01L21/027 , H01L21/30
Abstract: Resists for use in photon, electron beam and x-ray exposure devices comprise a polymeric or molecular composition the solubility of which is dependent upon the presence of acid removable protecting groups and a sulfonic acid precursor which generates a strong acid upon exposure to such radiation. The preferred sulfonic acid precursors are triflate salts of imides.
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