公开(公告)号：EP1851589A4

公开(公告)日：2009-08-19

申请号：EP06735757

申请日：2006-02-22

Applicant: IBM

Inventor： ALLEN ROBERT DAVID ,  BROCK PHILLIP JOE ,  GIL DARIO ,  HINSBERG WILLIAM DINAN ,  LARSON CARL ERIC ,  SUNDBERG LINDA KARIN ,  WALLRAFF GREGORY MICHAEL

IPC: G03C1/00

CPC classification number: G03F7/11 ,  G03F7/0046 ,  G03F7/2041 ,  Y10S430/108 ,  Y10S430/111

Abstract: A topcoat material for applying on top of a photoresist material is disclosed. The topcoat material comprises at least one solvent and a polymer which has a dissolution rate of at least 3000 A/second in aqueous alkaline developer. The polymer contains a hexafluoroalcohol monomer unit comprising one of the following two structures: (I) wherein n is an integer. The topcoat material may be used in lithography processes, wherein the topcoat material is applied on a photoresist layer. The topcoat material is 10 preferably insoluble in water, and is therefore particularly useful in immersion lithography techniques using water as the imaging medium.

公开(公告)号：EP3049868A4

公开(公告)日：2017-05-10

申请号：EP14848594

申请日：2014-07-23

Applicant: IBM ,  JSR CORP

Inventor： AYOTHI RAMAKRISHNAN ,  SWANSON SALLY ANN ,  WALLRAFF GREGORY MICHAEL

IPC: G03F7/038 ,  G03F7/004 ,  G03F7/039 ,  G03F7/32 ,  G03F7/40

CPC classification number: G03F7/325 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0048 ,  G03F7/0382 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/2037 ,  G03F7/2041 ,  G03F7/40

Abstract: Provided are chemically amplified resist compositions that include acid-labile sulfonate-ester photoresist polymers that are developable in an organic solvent. The chemically amplified resists produce high resolution positive tone development (PTD) and negative tone development (NTD) images depending on the selection of organic development solvent. Furthermore, the dissolution contrast of the traditional chemically amplified resists may be optimized for dual tone imaging through the addition of a photoresist polymer comprising an acid-labile sulfonate-ester moiety.

Abstract translation: 提供的是化学放大抗蚀剂组合物也包括酸不稳定的磺酸酯光致抗蚀剂聚合物是没有在有机溶剂中显影的。 的化学放大型抗蚀剂产生高分辨率正色调发展（PTD）和负性显影（NTD）的图像依赖于有机溶剂的发展的选择。 进一步，传统的化学放大抗蚀剂的溶解对比度可能的双调成像通过添加光致抗蚀剂聚合物，其包含对酸不稳定的磺酸酯部分的的优化。

公开(公告)号：JP2002244300A

公开(公告)日：2002-08-30

申请号：JP2002016785

申请日：2002-01-25

Applicant: IBM

Inventor： PHILIP JOE BROCK ,  DAWSON DANIEL JOSEPH ,  ITO HIROSHI ,  WALLRAFF GREGORY MICHAEL

IPC: G03F7/025 ,  C08F20/04 ,  C08F20/10 ,  C08F20/42 ,  C08F20/54 ,  G03F7/004 ,  G03F7/038 ,  G03F7/039 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a lithographic photoresist composition usable as a chemically amplifier photoresist. SOLUTION: The composition is substantially transparent to deep UV, that is, radiation of

公开(公告)号：JP2001288224A

公开(公告)日：2001-10-16

申请号：JP2001051017

申请日：2001-02-26

Applicant: IBM

Inventor： PHILIP JOE BROCK ,  DIPIETRO RICHARD ANTHONY ,  DONALD CLIFFORD HOFER ,  RATONAMU SOORIYAKUMARAN ,  WALLRAFF GREGORY MICHAEL

IPC: C08F30/08 ,  C08F32/00 ,  C08F230/08 ,  C08K5/41 ,  C08K5/54 ,  C08L43/04 ,  C08L45/00 ,  G03F7/004 ,  G03F7/038 ,  G03F7/039 ,  G03F7/075 ,  G03F7/09 ,  G11B5/31 ,  H01L21/027 ,  C08K5/541

Abstract: PROBLEM TO BE SOLVED: To provide a polymerizable monomer which has an ethylenically unsaturated group and silicon-containing groups transparent at 193 nm. SOLUTION: This polymerizable monomer has a polymerizable ethylenically unsaturated group and a plurality of silicon-containing groups separated from each other by groups X having no reactivity and transparent at 193 nm. A polymer obtained from the monomer can be used in the process for forming an image of 100 nm or lower by using a chemically amplified radiation-sensitive bilayer resist. The bilayer resist is arranged on a substrate and comprises (1) an upper image formation layer containing a radiation-sensitive acid-generating agent and (2) an organic lower layer. This bilayer resist can be used for producing integrated circuits.

公开(公告)号：JP2004339522A

公开(公告)日：2004-12-02

申请号：JP2004181278

申请日：2004-06-18

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： PHILIP JOE BROCK ,  DIPIETRO RICHARD ANTHONY ,  DONALD CLIFFORD HOFER ,  RATONAMU SOORIYAKUMARAN ,  WALLRAFF GREGORY MICHAEL

IPC: C08F30/08 ,  C08F32/00 ,  C08F230/08 ,  C08K5/41 ,  C08K5/54 ,  C08L43/04 ,  C08L45/00 ,  G03F7/004 ,  G03F7/038 ,  G03F7/039 ,  G03F7/075 ,  G03F7/09 ,  G11B5/31 ,  H01L21/027

CPC classification number: G03F7/094 ,  G03F7/0045 ,  G03F7/0382 ,  G03F7/0395 ,  G03F7/0758 ,  G11B5/3163

Abstract: PROBLEM TO BE SOLVED: To obtain a polymerizable monomer having Si-containing groups, transparent at 193 nm and ethylenically unsaturated group.
SOLUTION: The polymerizable monomer has the Si-containing groups separated each other by a group X transparent at 193 nm and having no reactivity and has the ethylenically unsaturated group. Polymers obtained from the monomer can be used in processes for forming sub-100 nm images by using a chemically amplified, radiation sensitive bilayer resist. The bilayer resist is disposed on a substrate and comprises (i) a top imaging layer comprising a radiation sensitive acid generator and (ii) an organic underlayer. The bilayer resist can be used in the production of integrated circuits.
COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：为了获得具有含Si基团的可聚合单体，在193nm下是透明的，具有烯属不饱和基团。 解决方案：可聚合单体具有通过在193nm透明且不具有反应性的基团X彼此分离并具有烯键式不饱和基团。 从单体获得的聚合物可用于通过使用化学放大的，辐射敏感的双层抗蚀剂形成亚100nm图像的方法。 双层抗蚀剂设置在基板上，并且包括（i）包含辐射敏感酸产生器和（ii）有机底层的顶部成像层。 双层抗蚀剂可用于集成电路的生产。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：WO2006091648A2

公开(公告)日：2006-08-31

申请号：PCT/US2006006225

申请日：2006-02-22

Applicant: IBM ,  ALLEN ROBERT DAVID ,  BROCK PHILLIP JOE ,  GIL DARIO ,  HINSBERG WILLIAM DINAN ,  LARSON CARL ERIC ,  SUNDBERG LINDA KARIN ,  WALLRAFF GREGORY MICHAEL

Inventor： ALLEN ROBERT DAVID ,  BROCK PHILLIP JOE ,  GIL DARIO ,  HINSBERG WILLIAM DINAN ,  LARSON CARL ERIC ,  SUNDBERG LINDA KARIN ,  WALLRAFF GREGORY MICHAEL

IPC: G03C1/76

CPC classification number: G03F7/11 ,  G03F7/0046 ,  G03F7/2041 ,  Y10S430/108 ,  Y10S430/111

Abstract: A topcoat material for applying on top of a photoresist material is disclosed. The topcoat material comprises at least one solvent and a polymer which has a dissolution rate of at least 3000 A/second in aqueous alkaline developer. The polymer contains a hexafluoroalcohol monomer unit comprising one of the following two structures: (I) wherein n is an integer. The topcoat material may be used in lithography processes, wherein the topcoat material is applied on a photoresist layer. The topcoat material is 10 preferably insoluble in water, and is therefore particularly useful in immersion lithography techniques using water as the imaging medium.

Abstract translation: 公开了一种用于施加在光致抗蚀剂材料上的面漆材料。 面漆材料包含至少一种溶剂和在含水碱性显影剂中具有至少3000A /秒的溶解速率的聚合物。 聚合物含有包含以下两种结构之一的六氟醇单体单元：（I）其中n是整数。 面漆材料可以用于光刻工艺中，其中将顶涂层材料施加在光致抗蚀剂层上。 面漆材料10优选不溶于水，因此特别适用于使用水作为成像介质的浸没式光刻技术。

公开(公告)号：GB2512794B

公开(公告)日：2015-05-06

申请号：GB201413639

申请日：2013-02-12

Applicant: IBM

Inventor： BASS JOHN DAVID ,  SUNDBERG LINDA KARIN ,  WALLRAFF GREGORY MICHAEL ,  MILLER ROBERT DENNIS ,  KIM HO-CHEOL ,  SONG QING

IPC: G03F7/004 ,  C07F7/28 ,  C07F9/00 ,  G03F7/20

公开(公告)号：AU2003251735A1

公开(公告)日：2004-02-25

申请号：AU2003251735

申请日：2003-07-02

Applicant: IBM

Inventor： HART MARK WHITNEY ,  KIM HO-CHEOL ,  MILLER ROBERT DENNIS ,  WALLRAFF GREGORY MICHAEL

IPC: B01L3/00 ,  G01N21/03

Abstract: A biomolecular array includes a substrate across which is distributed an array of discrete regions of a porous substance formed from a porogen-containing organosilicate material. The porous substance is designed to bind chemical targets useful in biotechnology applications, such as gene expression, protein, antibody, and antigen experiments. The regions are preferably optically isolated from each other and may be shaped to enhance detection of optical radiation emanating from the porous substance, e.g., as a result of irradiation of the regions with ultraviolet light. The discrete regions may be configured as microscopic wells within the substrate, or they may reside on top of the substrate in the form of microscopic mesas.

公开(公告)号：GB2488250B

公开(公告)日：2014-02-26

申请号：GB201203583

申请日：2010-11-26

Applicant: IBM

Inventor： CHENG JOY ,  HINSBERG WILLIAM ,  WALLRAFF GREGORY MICHAEL ,  TRUONG HOA ,  SUNDBERG LINDA KARIN ,  ITO HIROSHI ,  SANDERS DANIEL PAUL ,  KIM HO-CHEOL ,  NA YOUNG-HYE

IPC: G03F7/16 ,  B81C1/00 ,  G03F7/20 ,  G03F7/32

Abstract: A method of forming a layered structure comprising a domain pattern of a self-assembled material utilizes a negative-tone patterned photoresist layer comprising non-crosslinked developed photoresist. The developed photoresist is not soluble in an organic casting solvent for a material capable of self-assembly. The developed photoresist is soluble in an aqueous alkaline developer and/or a second organic solvent. A solution comprising the material capable of self-assembly and the organic casting solvent is casted on the patterned photoresist layer. Upon removal of the organic casting solvent, the material self-assembles, thereby forming the layered structure.

公开(公告)号：GB2488250A

公开(公告)日：2012-08-22

申请号：GB201203583

申请日：2010-11-26

Applicant: IBM

Inventor： CHENG JOY ,  HINSBERG WILLIAM ,  WALLRAFF GREGORY MICHAEL ,  TRUONG HOA ,  SUNDBERG LINDA KARIN ,  ITO HIROSHI ,  SANDERS DANIEL PAUL ,  KIM HO-CHEOL ,  NA YOUNG-HYE

IPC: G03F7/16 ,  B81C1/00 ,  G03F7/20 ,  G03F7/32

Abstract: A method of forming a layered structure comprising a domain pattern of a self-assembled material comprises: disposing on a substrate a photoresist layer comprising a non-crosslinking photoresist; optionally baking the photoresist layer; pattern- wise exposing the photoresist layer to first radiation; optionally baking the exposed photoresist layer; and developing the exposed photoresist layer with a non-alkaline developer to form a negative-tone patterned photoresist layer comprising non-crosslinked developed photoresist; wherein the developed photoresist is not soluble in a given organic solvent suitable for casting a given material capable of self-assembly, and the developed photoresist is soluble in an aqueous alkaline developer and/or a second organic solvent. A solution comprising the given material capable of self-assembly dissolved in the given organic solvent is casted on the patterned photoresist layer, and the given organic solvent is removed. The casted given material is allowed to self-assemble while optionally heating and/or annealing the casted given material, thereby forming the layered structure comprising the domain pattern of the self-assembled given material.